SAN CARLOS, Calif. — Feb. 29, 2016 — Alliance Memory today announced its technology lineup for electronica China, taking place March 15-17 at the Shanghai New International Expo Centre. In booth E2.2127, the company will highlight its latest synchronous DRAMs (SDRAM), including high-speed CMOS double data rate (DDR1), low-power mobile DDR1 (MDDR1), DDR2, and DDR3 SDRAMs in a wide range of package options, in addition to components recently discontinued by Micron Technology. At electronica China, Alliance Memory will highlight SDRAMs with densities from 16 Mb to 512 Mb, available in a variety of TSOP, FBGA, and TFBGA packages and with commercial (0 °C to +70 °C), industrial (-40 °C to +85 °C), and automotive (-40 °C to +105 °C) temperature ranges. Products on display will include the company’s legacy Micron Technology 512 Mb SDRAMs in the 54-pin TSOP II package. PC100- and PC133-compliant, the MT48LC32M16A2P-75: C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C operate from a single +3.3 V (±0.3 V) power supply. Alliance Memory will showcase DDR1 SDRAMs with densities of 64 Mb, 128 Mb, 512 Mb, and 1 Gb in the 66-pin TSOP II package with a 0.65-mm pitch, in addition to 60-ball TFBGA and 144-ball FBGA options. The devices feature fast clock rates of 200 MHz and 166 MHz and operate from a single +2.5-V (±0.2 V) power supply. Highlighted DDR2 SDRAMs will offer densities from 256 Mb to 2 Gb in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages. The devices operate from a single +1.8-V (±0.1 V) power supply, and they will include Alliance Memory’s new 2-Gb AS4C128M16D2 in the 84-ball FBGA, which is available from a very limited number of suppliers. For newer-generation microprocessors, Alliance Memory will highlight DDR3 and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, 4 Gb, and 8 Gb in 78-ball 9-mm by 10.5-mm by 1.2-mm and 96-ball 9-mm by 13-mm by 1.2-mm FBGA packages. The devices offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. The DDR3 SDRAMs operate from a single +1.5-V (±0.075 V) power supply, while the DDR3L SDRAMs operate from a single +1.35-V power supply. Also on display will be low-power MDDR1 SDRAMs in densities from 256 Mb to 2 G that operate from a single +1.8-V power supply, feature clock frequencies of 166 MHz and 200 MHz, and offer data rates of 333 Mbps/pin and 400 Mbps/pin. The devices are available in 60-ball and 90-ball FPBGA packages and commercial (-25 °C to +85 °C), extended (-30 °C to +85 °C), and industrial (-40 °C to +85 °C) temperature ranges. Alliance Memory’s SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources. Founded in 2002, electronica China is one of the leading platforms for electronic components, systems, and applications. More information on the show is available at http://electronica-china.com/.
Press Releases
Alliance Memory Launches New Monolithic High-Speed, Low-Voltage CMOS DDR3L SDRAM With 8-Gb Density in 96-Ball FBGA Package
SAN CARLOS, Calif. — July 14, 2015 — Alliance Memory today introduced a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gb density in the 96-ball, 9-mm by 14-mm, lead (Pb)-free FBGA package. Featuring state-of-the art silicon provided by Micron Technology, Inc., the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.
With minimal die shrinks, the single-die 8-Gb DDR3L SDRAM released today provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications — eliminating the need for costly redesigns and part requalification. This 8-Gb DDR3 is a logical choice for customers that require increased memory yet face board space constraints.
The AS4C512M16D3L operates from a single +1.35-V power supply and is available with a commercial temperature range of 0 °C to +95 °C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40 °C to +95 °C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16 bits.
The DDR3L SDRAM offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance.
Samples of the new AS4C512M16D3L are available now, with lead times of six to eight weeks for production quantities.
Alliance Memory Introduces New High-Speed CMOS Double Data Rate 2 (DDR2) Synchronous DRAMs With 2-Gb Density in 84-Ball FBGA Package
SAN CARLOS, Calif. — June 25, 2015 — Alliance Memory today broadens its lineup of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) with a new device featuring high 2-Gb density in the 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA package. Available from a very limited number of suppliers, the AS4C128M16D2 is offered in commercial (0 °C to +85 °C) and industrial (-40 °C to + 95 °C) temperature ranges.
Hard to find until now, the AS4C128M16D2 provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions in automotive, industrial, consumer, networking, and medical products requiring high memory bandwidth. The device is internally configured as eight banks of 16M x 16 bits. The DDR2 SDRAM offers a synchronous interface, operates from a single + 1.8-V (± 0.1 V) power supply, and is RoHS-compliant.
The AS4C128M16D2 features a fast clock rate of 400 MHz and a data rate of 800 Mbps/pin. The DDR2 SDRAM provides programmable read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
With the addition of the AS4C128M16D2, Alliance Memory now offers an extensive lineup of DDR2 SDRAMs featuring densities of 512 Mb, 1 Gb, and 2 Gb.
Alliance Memory to Offer Legacy Micron Technology 512M SDRAMs With Original Part Numbers Through 2017
“By continuing to offer the Micron SDRAMs with their original part numbers, we ensure that our customers won’t have to do a requalification of the parts for nearly two to three years,” said David Bagby, president of Alliance Memory. In addition to making this commitment, Alliance has already begun its own design, which will be ready in 2016. When this pin-to-pin-compatible part is ready, Micron customers will be able to make an easy transition to the Alliance part, experiencing no gap in product availability.
The MT48LC32M16A2P-75:C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and they are particularly well-suited to high-performance PC applications. Offered in a 54-pin TSOP II package and available with commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges, the devices operate from a single +3.3 V (±0.3 V) power supply and are lead (Pb)- and halogen-free.
PC100- and PC133-compliant, the devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
Samples and production quantities of the MT48LC32M16A2P-75, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are available now, with lead times of six to eight weeks for large orders.
Alliance Memory Announces ISO 9001:2008 Recertification
SAN CARLOS, Calif. — April 15, 2015 — Alliance Memory today announced that its San Carlos, California, facilities have received ISO 9001:2008 recertification. The company’s facilities have been ISO 9001-certified since 2009.
ISO 9001:2008, the most recent version of the certification standard, is internationally recognized for promoting a process approach to improving the effectiveness of a quality management system, enhancing customer satisfaction, and meeting customer requirements. Certification indicates independent verification that Alliance Memory meets the requirements of the standard. The assessments look at the process that a company uses to ensure quality and continuous improvement.
The Alliance Memory certificate (#QMS-0266b-01) was issued by Intertek, one of the most recognized and reputable ISO assessment providers in the world. Intertek granted the registration upon Alliance Memory’s successful completion of a series of quality system assessments applying the Plan – Do – Check – Act, or PDCA, cycle approach. Alliance Memory is certified for distribution and marketing activities supporting legacy memory products for the communications, computing, industrial, and consumer markets.
Click for details about the Alliance Memory quality program.
Alliance Memory Introduces New High-Speed CMOS DDR SDRAMs With 256 Mb, 512 Mb, and 1 Gb Densities in 60-Ball TFBGA and 66-Pin TSOP II Packages
SAN CARLOS, Calif. — April 2, 2015 — Alliance Memory today introduced new high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 256 Mb (AS4C32M8D1), 512 Mb (AS4C64M8D1), and 1 Gb (AS4C64M16D1) in the 60-ball 8-mm by 13-mm by 1.2 mm TFBGA package and the 66-pin TSOP II package with a 0.65-mm pin pitch.
The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 are internally configured as four banks of 32M word x 8 bits, 64M word x 8 bits, and 64M word x 16 bits, respectively. The DDR SDRAMs offer a synchronous interface, operate from a single +2.5-V (± 0.2 V) power supply, and are lead (Pb)- and halogen-free.
The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 feature fast clock rates of 200 MHz and 166 MHz and are offered in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
With the addition of the AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 to its portfolio, Alliance Memory now offers the most extensive lineup of DDR SDRAMs in the industry, featuring densities of 64 Mb, 128 Mb, 256 Mb, 512 Mb, and 1 Gb. For Alliance Memory’s customers, the devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn’t perform die shrinks, which frees up engineering resources.
Part # | Density | Configuration | Clock Rate | Package | Temp. Range |
---|---|---|---|---|---|
AS4C4M16D1A-5TCN | 64 Mb | 4M x 16 bit | 200 MHz | 66-pin TSOP II | 0 °C to +70 °C |
AS4C4M16D1A-5TIN | 64 Mb | 4M x 16 bit | 200 MHz | 66-pin TSOP II | -40 °C to +85 °C |
AS4C8M16D1A-5TCN | 128 Mb | 8M x 16 bit | 200 MHz | 66-pin TSOP II | 0 °C to +70 °C |
AS4C8M16D1A-5TIN | 128 Mb | 8M x 16 bit | 200 MHz | 66-pin TSOP II | -40 °C to +85 °C |
AS4C16M16D1A-5TCN | 256 Mb | 16M x 16 bit | 200 MHz | 66-pin TSOP II | 0 °C to +70 °C |
AS4C16M16D1A-5TIN | 256 Mb | 16M x 16 bit | 200 MHz | 66-pin TSOP II | -40 °C to +85 °C |
AS4C16M16D1-5BCN | 256 Mb | 16M x 16 bit | 200 MHz | 60-ball TFBGA | 0 °C to +70 °C |
AS4C16M16D1-5BIN | 256 Mb | 16M x 16 bit | 200 MHz | 60-ball TFBGA | -40 °C to +85 °C |
AS4C32M8D1-5TCN; | 256 Mb | 32M x 8 bit | 200 MHz | 66-pin TSOP II | 0 °C to +70 °C |
AS4C32M8D1-5TIN | 256 Mb | 32M x 8 bit | 200 MHz | 66-pin TSOP II | -40 °C to +85 °C |
AS4C32M16D1A-5TCN | 512 Mb | 32M x 16 bit | 200 MHz | 66-pin TSOP II | 0 °C to +70 °C |
AS4C32M16D1A-5TIN | 512 Mb | 32M x 16 bit | 200 MHz | 66-pin TSOP II | -40 °C to +85 °C |
AS4C32M16D1-5BCN | 512 Mb | 32M x 16 bit | 200 MHz | 60-ball TFBGA | 0 °C to +70 °C |
AS4C32M16D1-5BIN | 512 Mb | 32M x 16 bit | 200 MHz | 60-ball TFBGA | -40 °C to +85 °C |
AS4C64M8D1-5TCN | 512 Mb | 64M x 8 bit | 200 MHz | 66-pin TSOP II | 0 °C to +70 °C |
AS4C64M8D1-5TIN | 512 Mb | 64M x 8 bit | 200 MHz | 66-pin TSOP II | -40 °C to +85 °C |
AS4C64M8D1-5BCN | 512 Mb | 64M x 8 bit | 200 MHz | 60-ball TFBGA | 0 °C to +70 °C |
AS4C64M8D1-5BIN | 512 Mb | 64M x 8 bit | 200 MHz | 60-ball TFBGA | -40 °C to +85 °C |
AS4C64M16D1-6TCN | 1 Gb | 64M x 16 bit | 166 MHz | 66-pin TSOP II | 0 °C to +70 °C |
AS4C64M16D1-6TIN | 1 Gb | 64M x 16 bit | 166 MHz | 66-pin TSOP II | -40 °C to +85 °C |
Samples and production quantities of the new DDR SDRAMs are available now, with lead times of six to eight weeks for large orders.