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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

Press Releases

Alliance Memory Introduces New High-Speed CMOS DDR SDRAMs With 256 Mb, 512 Mb, and 1 Gb Densities in 60-Ball TFBGA and 66-Pin TSOP II Packages

SAN CARLOS, Calif. — April 2, 2015 — Alliance Memory today introduced new high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 256 Mb (AS4C32M8D1), 512 Mb (AS4C64M8D1), and 1 Gb (AS4C64M16D1) in the 60-ball 8-mm by 13-mm by 1.2 mm TFBGA package and the 66-pin TSOP II package with a 0.65-mm pin pitch.

The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 are internally configured as four banks of 32M word x 8 bits, 64M word x 8 bits, and 64M word x 16 bits, respectively. The DDR SDRAMs offer a synchronous interface, operate from a single +2.5-V (± 0.2 V) power supply, and are lead (Pb)- and halogen-free.

The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 feature fast clock rates of 200 MHz and 166 MHz and are offered in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

With the addition of the AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 to its portfolio, Alliance Memory now offers the most extensive lineup of DDR SDRAMs in the industry, featuring densities of 64 Mb, 128 Mb, 256 Mb, 512 Mb, and 1 Gb. For Alliance Memory’s customers, the devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn’t perform die shrinks, which frees up engineering resources.

Part # Density Configuration Clock Rate Package Temp. Range
AS4C4M16D1A-5TCN 64 Mb 4M x 16 bit 200 MHz 66-pin TSOP II 0 °C to +70 °C
AS4C4M16D1A-5TIN 64 Mb 4M x 16 bit 200 MHz 66-pin TSOP II -40 °C to +85 °C
AS4C8M16D1A-5TCN 128 Mb 8M x 16 bit 200 MHz 66-pin TSOP II 0 °C to +70 °C
AS4C8M16D1A-5TIN 128 Mb 8M x 16 bit 200 MHz 66-pin TSOP II -40 °C to +85 °C
AS4C16M16D1A-5TCN 256 Mb 16M x 16 bit 200 MHz 66-pin TSOP II 0 °C to +70 °C
AS4C16M16D1A-5TIN 256 Mb 16M x 16 bit 200 MHz 66-pin TSOP II -40 °C to +85 °C
AS4C16M16D1-5BCN 256 Mb 16M x 16 bit 200 MHz 60-ball TFBGA 0 °C to +70 °C
AS4C16M16D1-5BIN 256 Mb 16M x 16 bit 200 MHz 60-ball TFBGA -40 °C to +85 °C
AS4C32M8D1-5TCN; 256 Mb 32M x 8 bit 200 MHz 66-pin TSOP II 0 °C to +70 °C
AS4C32M8D1-5TIN 256 Mb 32M x 8 bit 200 MHz 66-pin TSOP II -40 °C to +85 °C
AS4C32M16D1A-5TCN 512 Mb 32M x 16 bit 200 MHz 66-pin TSOP II 0 °C to +70 °C
AS4C32M16D1A-5TIN 512 Mb 32M x 16 bit 200 MHz 66-pin TSOP II -40 °C to +85 °C
AS4C32M16D1-5BCN 512 Mb 32M x 16 bit 200 MHz 60-ball TFBGA 0 °C to +70 °C
AS4C32M16D1-5BIN 512 Mb 32M x 16 bit 200 MHz 60-ball TFBGA -40 °C to +85 °C
AS4C64M8D1-5TCN 512 Mb 64M x 8 bit 200 MHz 66-pin TSOP II 0 °C to +70 °C
AS4C64M8D1-5TIN 512 Mb 64M x 8 bit 200 MHz 66-pin TSOP II -40 °C to +85 °C
AS4C64M8D1-5BCN 512 Mb 64M x 8 bit 200 MHz 60-ball TFBGA 0 °C to +70 °C
AS4C64M8D1-5BIN 512 Mb 64M x 8 bit 200 MHz 60-ball TFBGA -40 °C to +85 °C
AS4C64M16D1-6TCN 1 Gb 64M x 16 bit 166 MHz 66-pin TSOP II 0 °C to +70 °C
AS4C64M16D1-6TIN 1 Gb 64M x 16 bit 166 MHz 66-pin TSOP II -40 °C to +85 °C

Samples and production quantities of the new DDR SDRAMs are available now, with lead times of six to eight weeks for large orders.

Alliance Memory and Digi-Key Team Up to Supply Market With Legacy Micron Technology 512M SDRAMs

SAN CARLOS, Calif. — March 2, 2015 — Alliance Memory recently announced that its 32M x 16 MT48LC32M16A2P-75: C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), 64M x 8 MT48LC64M8A2P-75:C (commercial temperature), and 64M x 8 MT48LC64M8A2P-75 IT:C (industrial temperature) 512M synchronous DRAM (SDRAM) devices — which the company recently acquired from Micron Technology the rights and license to supply — are now available from Digi-Key, a leading online electronic component distributor. In addition, Digi-Key will be offering Alliance-marked (M) 512M SDRAMs manufactured by Micron, which are 100 percent identical to the Micron parts.

“We are proud to collaborate with Digi-Key in extending the life cycle of these Micron SDRAMs as they reach their EOL,” said David Bagby, president and CEO of Alliance Memory. “With a global reputation for outstanding support and fast shipping, Digi-Key’s broad reach will be invaluable in ensuring that the market continues to have quick and convenient access to these devices.”

“We applaud both Alliance Memory and Micron in the steps they have taken to provide the market with a continued supply of these EOL parts,” said David Stein, vice president global semiconductors at Digi-Key. “We are looking forward to doing our part and have added the devices to our wide range of Alliance Memory products, which have proven to be instrumental in allowing our customers to lower costs by eliminating redesigns.”

Micron Technology Part Number  Alliance Memory Part Number  Density  Temperature Rating 
MT48LC32M16A2P-75:C AS4C32M16SM-7TCN 32M x 16 0 °C to +70 °C, commercial
MT48LC32M16A2P-75 IT:C AS4C32M16SM-7TIN 32M x 16 -40 °C to +85 °C, industrial
MT48LC64M8A2P-75:C Only will offer Micron part number 64M x 8 0 °C to +70 °C, commercial
MT48LC64M8A2P-75 IT:C Only will offer Micron part number 64M x 8 -40 °C to +85 °C, industrial

Devices with the Alliance Memory part numbers are 100 percent equivalent to the corresponding Micron part number, and each device has been manufactured to the same wafer/assembly and test materials and process as the corresponding Micron part number, with only the top-side marking being different. Micron manufactures these devices exclusively for Alliance Memory.

The MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN), MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN), MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C is optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and they are particularly well-suited to high-performance PC applications. Offered in a 54-pin TSOP II package, the devices operate from a single +3.3 V (±0.3 V) power supply and are lead(Pb)- and halogen-free.

PC100- and PC133-compliant, the devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Samples and production quantities of the MT48LC32M16A2P-75 (AS4C32M16SM-7TCN), MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN), MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are available now, with lead times of six to eight weeks for large orders.

More information on Digi-Key is available at www.digikey.com.

Alliance Memory Appoints Gregory Miller as Director of Sales

SAN CARLOS, Calif. — November 18, 2014 — Alliance Memory today announced that Gregory Miller has joined the company as its director of sales. In his new role, Miller will lead sales efforts for the company and serve as the worldwide sales account manager for Alliance Memory’s customer Jabil — a leading supply chain management and electronic manufacturing partner — with an emphasis on the Florida market.

For 30 years, Miller has contributed to the success of major industry leaders. He comes to Alliance Memory from BFG Systems, where as executive consultant and general manager he led the development of the company’s manufacturing and supply chain strategy. In addition to holding key positions at Rolls Royce, Celestica, Eaton Corp., and Intel, Miller served for eight years at Jabil in a number of capacities, including director of global business unit materials and director of global commodity management.

“Greg has a proven track record of success in the semiconductor industry, and a tremendous amount of direct experience with Jabil,” said David Bagby, president and CEO of Alliance Memory. “With Greg on the Alliance Memory team, we are well-positioned to continue our own growth and provide the ultimate service and support to this key customer.”

“Alliance Memory is built on a solid legacy IC foundation and is moving in the right direction with its recent product introductions, including mobile low-power double data rate (DDR), DDR2, and DDR3 SDRAMs,” said Miller. “In addition, the company takes great pride in its response time for customers and excellent service and support. It’s an exciting time to join Alliance Memory, and I look forward to contributing to its continued success.”

Miller holds a Bachelor of Science degree in business management from Northern Arizona University. He is based in Palm Harbor, Florida, and reports to Bagby.

Alliance Memory Partners With Micron Technology to Extend 512M SDRAM Product Life Cycle

SAN CARLOS, Calif. — October 20, 2014 — Alliance Memory today announced it has partnered with Micron Technology to supply and extend availability of support for three 512M synchronous DRAM (SDRAM) devices that Micron discontinued with Micron PCN #30995 (last time buy: Feb. 28, 2014; last time ship: Oct. 31, 2015).

Alliance Memory will be offering Micron’s 32M x 16 MT48LC32M16A2P-75:C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), and 64M x 8 MT48LC64M8A2P-75:C. In addition to the Micron part numbers Alliance Memory will also offer Alliance-marked 512M SDRAMs manufactured by Micron which will be 100% identical to the Micron parts.

Micron Part # Alliance Part # Density Temperature Rating
MT48LC32M16A2P-75:C AS4C32M16SM-7TCN 32M x 16 0°C to +70 °C, commercial
MT48LC32M16A2P-75 IT:C AS4C32M16SM-7TIN 32M x 16 -40°C to +85 °C, industrial
MT48LC64M8A2P-75:C Only will offer Micron part number 64M X 8 0°C to +70 °C, commercial

Devices with the Alliance Memory part numbers are 100% equivalent to the corresponding Micron part number, and each device has been manufactured to the same wafer/assembly and test materials and process as the corresponding Micron part number, with only the top-side marking being different. Micron will manufacture these devices.

“We thank Micron Technology for working proactively with Alliance Memory to ensure that there is no disruption in the supply chain for its customers as these devices reach their EOL,” said David Bagby, president of Alliance Memory. “Micron realized that the market depended upon them heavily for this key device and has partnered with us to make sure their customers can still be supported without costly redesigns.”

“Micron is excited to partner with Alliance Memory to provide extended support of 512Mb SDR. We are committed to our customers’ success and to providing extended lifetimes on legacy products to meet and exceed our customers’ needs. Our partnership with Alliance Memory on 512Mb SDR is the execution of this commitment,” said Matthias Buchner, senior director of segment and product marketing for Micron’s compute and networking business unit.

The MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN), MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN), and MT48LC64M8A2P-75:C are optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and they are particularly well-suited to high-performance PC applications. Offered in a 54-pin TSOP II package, the devices operate from a single +3.3 V (±0.3 V) power supply and are lead (Pb)- and halogen-free.

PC100- and PC133-compliant, the devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Samples and production quantities of the MT48LC32M16A2P-75 (AS4C32M16SM-7TCN), MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN), and MT48LC64M8A2P-75:C are available now, with lead times of six to eight weeks for large orders.

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About Alliance Memory Inc.
Alliance Memory is a worldwide provider of legacy memory products for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company’s product range includes a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3 V synchronous DRAMs (SDR), mobile DDRs, and 2.5 V single (DDR1), 1.8 V double (DDR2), and 1.5 V & 1.35 V triple rate (DDR3) synchronous DRAMs. Depending on the family, these products are available with commercial, industrial, and automotive operating temperature ranges and with densities from 64K to 4G. Alliance Memory is a privately held company with headquarters in San Carlos, Calif., and regional offices in the United Kingdom, France, Italy, Sweden, Bulgaria, China, and Southeast Asia. More information about Alliance Memory is available online at www.alliancememory.com.

About Micron Technology Inc.
Micron Technology Inc. is a global leader in advanced semiconductor systems. Micron’s broad portfolio of high-performance memory technologies — including DRAM, NAND and NOR Flash — is the basis for solid state drives, modules, multichip packages, and other system solutions. Backed by more than 35 years of technology leadership, Micron’s memory solutions enable the world’s most innovative computing, consumer, enterprise storage, networking, mobile, embedded, and automotive applications. Micron’s common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology Inc., visit www.micron.com.

Alliance Memory Moves to Larger Facility to Accommodate Growth

SAN CARLOS, Calif. — October 6, 2014 — To accommodate the recent introduction of several new product lines, Alliance Memory today announced that the company has moved into a new building with twice the warehouse and office space. Effective immediately, the new Alliance Memory address is 511 Taylor Way, San Carlos, California, 94070.

“Our previous facility has served us well for the past five years, but with our rapid expansion, we were simply running out of warehouse space,” said Kim Bagby, CFO at Alliance Memory. “The new location will accommodate us now and allow for future growth. Furthermore, we were able to remain in San Carlos, which keeps us in close proximity to Silicon Valley.”

Recent introductions to the Alliance Memory product lineup include high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM); DDR3 SDRAMs; low-voltage DDR3L SDRAMs; and mobile DDR SDRAMs designed to increase efficiency and extend battery life in compact portable devices.

Alliance Memory’s products provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, consumer, commercial, medical, telecom, and networking products, eliminating the need for costly redesigns and part requalification.

Alliance Memory Strengthens Customer Support Team, Appoints Winner Chen as Field Application Engineer

SAN CARLOS, Calif. — September 22, 2014 — Alliance Memory today announced that the company has bolstered its customer support team with the addition of Winner Chen as field application engineer. Serving as a valuable resource for designers utilizing Alliance Memory’s legacy ICs, Mr. Chen will assist in solving technical issues such as configuring timing parameters on software and connection diagrams and PCB layouts on hardware while fielding requests for IBIS models, information on ESD levels, and more.

Mr. Chen comes to Alliance Memory from Jiangsu Mesh Communication Electronic Co. Ltd., where as director of the central node platform he was instrumental in the creation of three generations of wireless ad hoc network communication products. Previously, for Shenzhen B.C. Electronic Co., Ltd., he developed palmtop software and electronic energy meters for use in a variety of environments.

“Customer support has always been a top priority for Alliance Memory, and we pride ourselves on our friendly, knowledgeable staff,” said David Bagby, president and CEO of Alliance Memory. “With his considerable development experience in a wide range of electronic products, Winner makes a great addition to the team as our new field application engineer. We’re excited to have him backing up our products and providing invaluable expertise to our customers.”

“From my own experience in electronics design, I know that strong technical support from suppliers can be vital to the success of a project,” said Chen. “I’m looking forward to using what I’ve learned in my career to help our customers overcome the challenges in their applications and get their products to market faster, all while avoiding costly redesigns by using our legacy ICs.”

Mr. Chen holds a bachelor’s degree in optical information science and technology from Guilin University of Electronic Technology. He is based in Shenzhen City, China, and reports to Bagby.