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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

Press Releases

Alliance Memory Introduces Three New CMOS Synchronous DRAMs (SDRAM) Rated for the Industrial Temperature Range of –40°C to +85°C

SAN CARLOS, Calif. — March 26, 2012 — Alliance Memory Inc., a worldwide provider of legacy memory ICs for the communications, computing, medical, industrial, and consumer markets, today introduced three new high-speed CMOS synchronous DRAMs (SDRAM) rated for the industrial temperature range of –40°C to +85°C.

The SDRs released today offer densities of 64 Mb (AS4C4M16S-6TIN), 128 Mb (AS4C8M16S-6TIN), and 256 Mb (AS4C16M16S-6TIN). The devices are optimized for high-temperature industrial applications, in addition to high-performance PC, communications, medical, and consumer products requiring high memory bandwidth.

Packaged in a 54-pin, 400-mil plastic TSOP II, the new AS4C4M16S-6TIN, AS4C8M16S-6TIN, and AS4C16M16S-6TIN offer a fast access time from clock down to 4.5 ns at a 5-ns clock cycle, and clock rates of 166 MHz. Internally configured as four banks of 1M, 2M, or 4M word x 16 bits with a synchronous interface, the SDRs operate from a single +3.3-V (± 0.3V) power supply and are lead (Pb)- and halogen-free.

Alliance Memory’s SDRs provide programmable read or write burst lengths of 1, 2, 4, 8, or full-page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Device Specification Table

Part Number AS4C4M16S-6TIN AS4C8M16S-6TIN AS4C16M16S-6TIN
Density 64 Mv 128 Mb 256 Mb
Configuration 4M x 16 bit 8M x 16 bit 16M x 16 bit
Clock cycle (ns) 6 6 6
Max. access time from clock (ns) 5.4/5.4 5/5.4 4.5/5.4/5.4
Clock rate (MHz) 166 166 166

Samples and production quantities of the new SDRs are available now with lead times of six to eight weeks.

ISO 9001-2008 Recertification Announcement

SAN CARLOS, Calif. — Feb. 29, 2012 — Legacy SRAM and DRAM manufacturer Alliance Memory today announced achievement of ISO 9001:2008 recertification status for its facilities in California. The company’s facilities have been ISO 9001 certified since 2009.

ISO 9001:2008 (the most recent version of the certification standard) is internationally recognized for promoting a process approach to improving the effectiveness of a Quality Management System, enhancing customer satisfaction, and meeting customer requirements. Certification indicates independent verification that Alliance Memory meets the requirements of the standard. The assessments look at the process that a company uses to ensure quality and continuous improvement.

The Alliance Memory certificate (#QMS-0266b) was issued by Intertek, one of the most recognized and reputable ISO assessment providers in the world. Intertek granted the registration upon Alliance Memory’s successful completion of a series of quality system assessments applying the Plan – Do – Check – Act, or PDCA, cycle approach.

Alliance Memory was formed in 2006 to supply legacy memory ICs to the industrial and communications market space. Its initial products were the fast asynchronous SRAM product line acquired in its entirety from Alliance Semiconductor. The company has since expanded its product lines to include synchronous DRAMs (SDRs) and has acquired the low-power asynchronous SRAM line of ZMD AG. The company has continued the relationships with all of the manufacturing partners that were well established with Alliance Semiconductor.

“ISO 9001:2008 is a customer-centric program, and at Alliance Memory the goals and procedures of our quality program are totally geared to customer satisfaction and to making it easy to do business with us,” said Richard G. Ward, director of quality and logistics at Alliance Memory. “Quality is not just about the product, but about everything that everyone in the company does.”

Visit our Quality page to learn more.

Alliance Memory Launches New 4M Fast SRAM in 48-Ball FBGA Package


SAN CARLOS, Calif. — Jan. 10, 2012 — Alliance Memory is adding to its extensive line of legacy fast asynchronous SRAMs with a new 4M (256K x 16) IC in the 48-ball FBGA package. The new AS7C34098A-10BIN can be used as a drop-in replacement for devices from several SRAM manufacturers.

Designed for memory applications where fast data access, low power, and simple interfacing are essential, the AS7C34098A-10BIN will help to save space in industrial and communications systems with its 8 mm by 10 mm by 1.20 mm FBGA package.

For mainstream digital signal processors (DSP) and microcontrollers, Alliance Memory’s legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS7C34098A-10BIN is the latest in the company’s full range of fast asynchronous SRAM products, which include devices with densities of 64K, 256K, 512K, 1M, 2M, and 4M.

Samples and production quantities of the AS7C34098A-10BIN are available now, with lead times of four to six weeks for production quantities.