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September 2020


AS4C1G8D4 and AS4C512M16D4: New 8Gb High-Speed CMOS DDR4 SDRAMs

The News: To meet the increasing demand for higher-density CMOS DDR4 SDRAMs, Alliance Memory today announced that it has expanded its portfolio with two new 8Gb devices. Delivering improved performance over previous-generation DDR3 SDRAMs, the AS4C1G8D4 and AS4C512M16D4 offer lower power consumption and faster data transfer rates in 78-ball and 96-ball FBGA packages, respectively.

Parts Table:

Part number Density Organization Package Temp. range (°C)
AS4C1G8D4-75BCN 8Gb 1Gb x 8 78-ball FBGA 0 to +95
AS4C1G8D4-75BIN 8Gb 1Gb x 8 78-ball FBGA -40 to +95
AS4C512M16D4-75BCN 8Gb 512Mb x 16 96-ball FBGA 0 to +95
AS4C512M16D4-75BIN 8Gb 512Mb x 16 96-ball FBGA -40 to +95

Key Specifications and Benefits:

  • Low power consumption of +1.2V (±0.06V)
  • Offered in 78-ball and 96-ball FBGA packages
  • Internally configured as 1G x 8-bit (AS4C1G8D4) and 512M x 16-bit (AS4C512M16D4) with up to 16 memory banks
  • Fast clock speeds of 1333MHz
  • Extremely high transfer rates to 2666Mbps/pin
  • Available in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges
  • Support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • RoHS-compliant
  • Lead (Pb) and halogen-free

Target Applications:

  • Portable electronics, 5G designs, desktop computers, and servers for industrial, networking, IoT, automotive, gaming, and consumer markets applications

The Context: Compared to DDR3 SDRAMs, Alliance Memory’s new 8Gb DDR4 SDRAMs reduce operating voltages from 1.65V to +1.2V (±0.06V) to increase battery life in portable electronics such as smartphones and tablets. For increased efficiency and performance in 5G designs, desktop computers, and servers, the 1Gb x 8-bit AS4C1G8D4 and 512M x 16-bit AS4C512M16D4 offer up to 16 memory banks and deliver faster clock speeds of 1333MHz for extremely high transfer rates to 2666Mbps/pin. With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification.

Availability: Samples of the new 8Gb DDR4 SDRAMs are available now. Production quantities will be available in September 2020 with lead times of 8 to 10 weeks.

Link to product datasheets: AS4C1G8D4 and AS4C512M16D4


EMEA – Sue Macedo
+44 (0)787 634 4055

Americas – Tom Gargan
+1 514 639 0914

Asia / Pacific – David Bagby
+1 650 868-1211


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