Alliance Memory Introduces New High-Speed CMOS DDR SDRAMs With 256 Mb, 512 Mb, and 1 Gb Densities in 60-Ball TFBGA and 66-Pin TSOP II Packages

SAN CARLOS, Calif. — April 2, 2015 — Alliance Memory today introduced new high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 256 Mb (AS4C32M8D1), 512 Mb (AS4C64M8D1), and 1 Gb (AS4C64M16D1) in the 60-ball 8-mm by 13-mm by 1.2 mm TFBGA package and the 66-pin TSOP II package with a 0.65-mm pin pitch.

The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 are internally configured as four banks of 32M word x 8 bits, 64M word x 8 bits, and 64M word x 16 bits, respectively. The DDR SDRAMs offer a synchronous interface, operate from a single +2.5-V (± 0.2 V) power supply, and are lead (Pb)- and halogen-free.

The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 feature fast clock rates of 200 MHz and 166 MHz and are offered in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

With the addition of the AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 to its portfolio, Alliance Memory now offers the most extensive lineup of DDR SDRAMs in the industry, featuring densities of 64 Mb, 128 Mb, 256 Mb, 512 Mb, and 1 Gb. For Alliance Memory’s customers, the devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn’t perform die shrinks, which frees up engineering resources.

Part #	Density	Configuration	Clock Rate	Package	Temp. Range
AS4C4M16D1A-5TCN	64 Mb	4M x 16 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C4M16D1A-5TIN	64 Mb	4M x 16 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C8M16D1A-5TCN	128 Mb	8M x 16 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C8M16D1A-5TIN	128 Mb	8M x 16 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C16M16D1A-5TCN	256 Mb	16M x 16 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C16M16D1A-5TIN	256 Mb	16M x 16 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C16M16D1-5BCN	256 Mb	16M x 16 bit	200 MHz	60-ball TFBGA	0 °C to +70 °C
AS4C16M16D1-5BIN	256 Mb	16M x 16 bit	200 MHz	60-ball TFBGA	-40 °C to +85 °C
AS4C32M8D1-5TCN;	256 Mb	32M x 8 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C32M8D1-5TIN	256 Mb	32M x 8 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C32M16D1A-5TCN	512 Mb	32M x 16 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C32M16D1A-5TIN	512 Mb	32M x 16 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C32M16D1-5BCN	512 Mb	32M x 16 bit	200 MHz	60-ball TFBGA	0 °C to +70 °C
AS4C32M16D1-5BIN	512 Mb	32M x 16 bit	200 MHz	60-ball TFBGA	-40 °C to +85 °C
AS4C64M8D1-5TCN	512 Mb	64M x 8 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C64M8D1-5TIN	512 Mb	64M x 8 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C64M8D1-5BCN	512 Mb	64M x 8 bit	200 MHz	60-ball TFBGA	0 °C to +70 °C
AS4C64M8D1-5BIN	512 Mb	64M x 8 bit	200 MHz	60-ball TFBGA	-40 °C to +85 °C
AS4C64M16D1-6TCN	1 Gb	64M x 16 bit	166 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C64M16D1-6TIN	1 Gb	64M x 16 bit	166 MHz	66-pin TSOP II	-40 °C to +85 °C

Samples and production quantities of the new DDR SDRAMs are available now, with lead times of six to eight weeks for large orders.