SAN CARLOS, Calif. — Feb. 29, 2016 — Alliance Memory today announced its technology lineup for electronica China, taking place March 15-17 at the Shanghai New International Expo Centre. In booth E2.2127, the company will highlight its latest synchronous DRAMs (SDRAM), including high-speed CMOS double data rate (DDR1), low-power mobile DDR1 (MDDR1), DDR2, and DDR3 SDRAMs in a wide range of package options, in addition to components recently discontinued by Micron Technology. At electronica China, Alliance Memory will highlight SDRAMs with densities from 16 Mb to 512 Mb, available in a variety of TSOP, FBGA, and TFBGA packages and with commercial (0 °C to +70 °C), industrial (-40 °C to +85 °C), and automotive (-40 °C to +105 °C) temperature ranges. Products on display will include the company’s legacy Micron Technology 512 Mb SDRAMs in the 54-pin TSOP II package. PC100- and PC133-compliant, the MT48LC32M16A2P-75: C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C operate from a single +3.3 V (±0.3 V) power supply. Alliance Memory will showcase DDR1 SDRAMs with densities of 64 Mb, 128 Mb, 512 Mb, and 1 Gb in the 66-pin TSOP II package with a 0.65-mm pitch, in addition to 60-ball TFBGA and 144-ball FBGA options. The devices feature fast clock rates of 200 MHz and 166 MHz and operate from a single +2.5-V (±0.2 V) power supply. Highlighted DDR2 SDRAMs will offer densities from 256 Mb to 2 Gb in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages. The devices operate from a single +1.8-V (±0.1 V) power supply, and they will include Alliance Memory’s new 2-Gb AS4C128M16D2 in the 84-ball FBGA, which is available from a very limited number of suppliers. For newer-generation microprocessors, Alliance Memory will highlight DDR3 and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, 4 Gb, and 8 Gb in 78-ball 9-mm by 10.5-mm by 1.2-mm and 96-ball 9-mm by 13-mm by 1.2-mm FBGA packages. The devices offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. The DDR3 SDRAMs operate from a single +1.5-V (±0.075 V) power supply, while the DDR3L SDRAMs operate from a single +1.35-V power supply. Also on display will be low-power MDDR1 SDRAMs in densities from 256 Mb to 2 G that operate from a single +1.8-V power supply, feature clock frequencies of 166 MHz and 200 MHz, and offer data rates of 333 Mbps/pin and 400 Mbps/pin. The devices are available in 60-ball and 90-ball FPBGA packages and commercial (-25 °C to +85 °C), extended (-30 °C to +85 °C), and industrial (-40 °C to +85 °C) temperature ranges. Alliance Memory’s SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources. Founded in 2002, electronica China is one of the leading platforms for electronic components, systems, and applications. More information on the show is available at http://electronica-china.com/.