16GB DDR4 SDRAM
We’ve expanded our portfolio of CMOS DDR4 SDRAMs with a new 16Gb device in the 96-ball FBGA package. Compared to previous generation DDR3 SDRAMs, the new AS4C1G16D4‑062BCN delivers improved performance with lower power consumption and higher speeds and transfer rates. Learn more . . .
1.8V AND 3.3V SLC PARALLEL NAND FLASH
The new AS9F series of 1.8V and 3.3V devices features densities from 1Gb to 8Gb and fast block erase times down to 3ms typical. Learn more . . .
NEW 2GB, 4GB, 8GB, AND 16GB LPDDR4X SDRAMS
We’ve expanded our offering of high-speed CMOS mobile low-power SDRAMs with four new LPDDR4X devices in a variety of densities. The new devices deliver ~50% lower power ratings in the 200-ball FBGA package for higher power efficiency. Learn more . . .
For solid-state storage in consumer, industrial, and networking applications, the ASFC16G31M-51BIN integrates NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package. Learn more . . .
NEW MICRON 4GB LPDDR2 SDRAM
We’re now offering Micron Technologies’ 4Gb MT42L128M32D1TJ-25 IT:A LPDDR2 SDRAM, which combines low power consumption of 1.2V with a 400MHz clock rate and 800Mbps/in data rate in the 134-FBGA package. Learn more . . .
NEW TEAM MEMBERS
Two new team members are bolstering our presence in Asia. Kelly Chien has joined Alliance Memory as our country manager for Taiwan, and Linus Park has joined Alliance Memory as our country manager for Korea. In their respective countries, Kelly and Linus will be working closely with our distribution partners to expand sales coverage.