March 2014 Quarterly Newsletter

We’re excited to be making our first appearance at Electronica China at the Shanghai New International Expo Centre, Booth #W1.1264, March 18-20. If you plan to be in Shanghai, we hope you’ll stop by our booth and see the latest in our legacy IC solutions, including high-speed CMOS synchronous DRAMs (SDRAM) and double data rate (DDR), DDR2, and DDR3 SDRAMs featuring a wide range of densities, configurations, package options, and temperature ratings. We will have representatives from Asia Sales, Operations and our CEO David Bagby in the booth.

ELECTRONICA CHINA PRODUCT HIGHLIGHTS

High-Speed CMOS DDR 3 Synchronous DRAMs (SDRAM)

Alliance Memory is introducing new high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAMs) with high densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball and 96-ball FBGA packages. Offering a wide variety of configurations — including 128M x 8, 256M x 8, and 512M x 8 and 64M x 16, 128M x 16, and 256M x 16 — with a synchronous interface, the devices are available in commercial (0 °C to +85 °C), industrial (-40 °C to +95 °C), and automotive (-40 °C to +105 °C) temperature ranges. Operating from a single +1.5-V power supply, the DDR3 SDRAMs feature a very fast clock rate of 1600 MHz.

High-Speed CMOS Double Data Rate Synchronous DRAMs (DDR SDRAM)
The latest high-speed CMOS double data rate synchronousDRAMs (DDR SDRAM) from Alliance Memory offer densities of 64 Mb, 128 Mb, 256 Mb, and 512 Mb, and an industrial temperature range of -40 °C to +85 °C. Internally configured as four banks of 1M, 2M, 4M, or 8M word x 16 bits with a synchronous interface, the devices operate from a single +2.5-V (± 0.2 V) power supply, feature a fast clock rate of 200 MHz, and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch.

High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAM)
Our DDR2 SDRAMs include devices with densities of 512 Mb, 1 Gb and 2 Gb internally configured as four banks of 8M words x 16 bits, and eight banks of 8M x 16 bits and 16M x 8 bits. Offered in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages, the DDR2 SDRAMs feature a synchronous interface, operate from a single +1.8-V (± 0.1 V) power supply, and feature a fast clock rate of 400 MHz and data rate of 800 Mbps/pin. The devices are available in commercial (0 °C to +85 °C), industrial (-40 °C to +95 °C), and automotive (-40 °C to +105 °C) temperature ranges.

High-Speed CMOS Synchronous DRAMs (SDRAM)
Alliance Memory has extended its offering of 16M, 64M, 128M, and 256M high-speed CMOS synchronous DRAMs (SDRAM) with x32 devices in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA and 86-pin 400-mil plastic TSOP II packages. The 2M x 32, 4M x 32, and 8M x 32 devices feature fast access time from clock down to 5.4 ns and operate from a single +3.3-V (± 0.3 V) power supply.

NEW MEMBERS OF OUR TEAM IN ASIA

Daniel Mak, Sales Director, Hong Kong and Southern China
We’re pleased to announce that Daniel Mak has joined Alliance Memory as our sales director in Hong Kong and Southern China. In his new role, Mr. Mak will be responsible for directing all sales activities in the region as the company’s SRAM and DRAM products continue to experience growth for Alliance Memory.

Mr. Mak has worked in the semiconductor industry since 1991, holding key management positions since 1998. Mr. Mak is veteran of DRAM manufacturer Winbond, for Karin Electronic Supplies Co., Ltd. and most recently area manager of Hong Kong for Metatech Ltd..

K. K. Fan, Director of Operations

K. K. Fan joined Alliance Memory as director of operations in February 2014. From his base in Taiwan, K. K. is responsible for overseeing the company’s daily operations as its SRAM and DRAM products continue to experience worldwide growth.

K. K. has worked in the semiconductor industry since 1992, holding key positions in sales and production management. He comes to Alliance Memory from ChipMOS Technology Inc., where he served as director of sales and manager of IC production testing. Previously, he held the position of section manager for IC production testing at Mosel Vitelic Inc. He holds a bachelor’s degree in industrial management from the National Taiwan University of Science and Technology and an MBA in technology management from the National Chiao Tung University.

FROM THE PRESIDENT
This year is already starting off with many exciting opportunities. In a few days we’ll be exhibiting at the electronica China show in Shanghai, which will provide an opportunity to showcase our expanding product line-up. We certainly have made a huge leap in product offerings over the past year with the addition of so many DRAM products. It’s great for Alliance Memory and for our customers to be finding ourselves in a growth phase as so many of our competitors continue to consolidate and cut back.

We look forward to an exciting year ahead.

David Bagby
President and CEO