New 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs

The News: Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with four new LPDDR4X devices in a variety of densities. Offering an extension to the company’s fourth-generation LPDDR4 SDRAMs, the 2Gb AS4C128M16MD4V-062BAN, 4Gb AS4C256M16MD4V-062BAN, 8Gb AS4C512M16MD4V-053BIN, and 16Gb AS4C512M32MD4V-053BIN deliver ~50% lower power ratings in the 200-ball FBGA package for higher power efficiency.

Part Numbers: AS4C128M16MD4V-062BAN, AS4C256M16MD4V-062BAN, AS4C512M16MD4V-053BIN, and AS4C512M32MD4V-053BIN

Benefits:

• Available in densities from 2Gb to 16Gb
• Low-voltage operation of 0.6V
• Fast clock speeds up to 1.86GHz
• Extremely high transfer rates of 3.7Gbps
• AEC-Q100-qualified with on-chip ECC for increased reliability (AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN)
• Available in automotive (-40°C to +105°C) and industrial (40°C to +85°C) temperature ranges
• Organized as single-channel (AS4C512M16MD4V-053BIN, AS4C128M16MD4V-062BAN, and AS4C256M16MD4V-062BAN) and dual-channel (AS4C512M32MD4V-053BIN) devices
  • Eight internal x16 banks per channel
• Fully synchronous operation
• Programmable read and write burst lengths of 16, 32, and on the fly
• Selectable output drive strength
• On-chip temperature sensor controls the self-refresh rate
• Offered in the 200-ball FBGA package

Device Specification Table:

Part #	AS4C128M16MD4V-062BAN	AS4C256M16MD4V-062BAN	AS4C512M16MD4V-053BIN	AS4C512M32MD4V-053BIN
Density	2Gb	4Gb	8Gb	16Gb
Organization	128M x 16	256M x 16	512M x 16	512M x 32
VDD1 / VDD2 / VDDQ	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V
Package	200-ball TFBGA	200-ball TFBGA	200-ball TFBGA	200-ball TFBGA
Clock Frequency	1600MHz	1600MHz	1866MHz	1866MHz
Data Rate	3200Mbps	3200Mbps	3733Mbps	3733Mbps
Temperature Range	-40°C to +105°C	-40°C to +105°C	-40°C to +85°C	-40°C to +85°C

Target Applications:

• 5G, AI, and IoT
• Portable electronics for the consumer, commercial, and industrial markets
• Automotive ADAS systems

The Context: Offering an extension to Alliance Memory’s fourth-generation LPDDR4 SDRAMs, the company’s new 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X devices deliver ~50% lower power consumption to increase battery life in portable electronics for the consumer, commercial, and industrial markets, including smart phones, smart speakers, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the AS4C128M16MD4V-062BAN, AS4C256M16MD4V-062BAN, AS4C512M16MD4V-053BIN, and AS4C512M32MD4V-053BIN deliver fast clock speeds up to 1.86GHz for extremely high transfer rates of 3.7Gbps. For automotive applications — including ADAS systems — the AEC-Q100-qualified AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN offer a temperature range of -40C to +105C and on-chip ECC for increased reliability.

Alliance Memory’s LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification.

Availability: Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of 12 weeks.

Link to product datasheets and Buy Now information: AS4C128M16MD4V-062BAN, AS4C256M16MD4V-062BAN, AS4C512M16MD4V-053BIN, and AS4C512M32MD4V-053BIN