New x8, x16, and x32 512Mb Monolithic CMOS SDRAMs

The News: Alliance Memory extends its offering of 512Mb high-speed CMOS SDRAMs with new monolithic 64M x 8 (AS4C64M8SC-7TIN) and 32M x 16 (AS4C32M16SC-7TIN) devices in the 54-pin 400-mil plastic package, and a 16M x 32 (AS4C16M32SC-7TIN) device in the 86-pin TSOP II package.

Part Numbers: AS4C64M8SC-7TIN, AS4C32M16SC-7TIN, and AS4C16M32SC-7TIN

Key Specifications and Benefits:

• 64M x 8, 32M x 16, and 16M x 32 configurations
• Offered in 54-pin and 86-pin TSOP II packages
• LVTTL interface
• Single +3.3-V (± 0.3 V) power supply
• Power down mode lowers power consumption
• Data mask for read/write control
• Fast clock rates to 133 MHz
• Available in an industrial temperature range of -40 °C to +85 °C
• Fully synchronous with the positive clock edge
• Support sequential and interleave burst types with read or write burst lengths of 1, 2, 4, 8, or full page
• Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
• Easy-to-use refresh functions include auto- or self-refresh
• Programmable mode register allows the system to choose the most suitable modes to maximize performance
• Lead (Pb)- and halogen-free

Target Applications:

• General-purpose computing, medical, industrial, point-of-sale, automotive, and telecom applications requiring high memory bandwidth

The Context: Fully synchronous with the positive clock edge, the AS4C64M8SC-7TIN, AS4C32M16SC-7TIN, and AS4C16M32SC-7TIN deliver faster performance than DRAMs in applications requiring high memory bandwidth. With minimal die shrinks, they can provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions, eliminating the need for costly redesigns and part requalification.

Availability: Samples and production quantities of the new SDRAMs are available now, with lead times of eight weeks for large orders.