Alliance Memory Introduces Three New CMOS Synchronous DRAMs (SDRAM) Rated for the Industrial Temperature Range of –40°C to +85°C

SAN CARLOS, Calif. — March 26, 2012 — Alliance Memory Inc., a worldwide provider of legacy memory ICs for the communications, computing, medical, industrial, and consumer markets, today introduced three new high-speed CMOS synchronous DRAMs (SDRAM) rated for the industrial temperature range of –40°C to +85°C.

The SDRs released today offer densities of 64 Mb (AS4C4M16S-6TIN), 128 Mb (AS4C8M16S-6TIN), and 256 Mb (AS4C16M16S-6TIN). The devices are optimized for high-temperature industrial applications, in addition to high-performance PC, communications, medical, and consumer products requiring high memory bandwidth.

Packaged in a 54-pin, 400-mil plastic TSOP II, the new AS4C4M16S-6TIN, AS4C8M16S-6TIN, and AS4C16M16S-6TIN offer a fast access time from clock down to 4.5 ns at a 5-ns clock cycle, and clock rates of 166 MHz. Internally configured as four banks of 1M, 2M, or 4M word x 16 bits with a synchronous interface, the SDRs operate from a single +3.3-V (± 0.3V) power supply and are lead (Pb)- and halogen-free.

Alliance Memory’s SDRs provide programmable read or write burst lengths of 1, 2, 4, 8, or full-page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Device Specification Table

Part Number	AS4C4M16S-6TIN	AS4C8M16S-6TIN	AS4C16M16S-6TIN
Density	64 Mv	128 Mb	256 Mb
Configuration	4M x 16 bit	8M x 16 bit	16M x 16 bit
Clock cycle (ns)	6	6	6
Max. access time from clock (ns)	5.4/5.4	5/5.4	4.5/5.4/5.4
Clock rate (MHz)	166	166	166

Samples and production quantities of the new SDRs are available now with lead times of six to eight weeks.