SAN CARLOS, Calif. — Nov. 15, 2012 — Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 4M IC (512K x 8). Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns in a wide variety of package options, the AS6C4008A is optimized for low-power industrial, telecom, medical, automotive, and networking applications and is particularly well-suited for battery backup nonvolatile memory.
The device released today is offered in the 36-ball, 6-mm by 8-mm TFBGA package and in five 32-pin packages, including the 450-mil SOP, 8-mm by 20-mm TSOP-I, 400-mil TSOP-II, 600-mil P-DIP, and 8-mm by 13.4-mm sTSOP. The AS6C4008A features low power consumption with a typical operating current of 30 mA and standby current of 1 µA. All inputs and outputs are fully TTL-compatible.
The AS6C4008A is fabricated using very high-performance, high-reliability CMOS technology, and its current is stable within the operating temperature range of – 40 °C to + 85 °C. The device offers fully static operation and tri-state output, and it features a data retention voltage of 1.5 V minimum.
Alliance Memory’s legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS6C4008A is the latest in the company’s full range of low-power SRAM products, which include devices with densities of 64K, 256K, 1M, 2M, 4M, 8M, and 16M.
Samples and production quantities of the AS6C4008A are available now, with a lead time of six weeks for large orders. Visit Alliance Memory this week at electronica 2012, booth A5.364.