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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

February 27, 2013

Alliance Memory Introduces New High-Speed CMOS Synchronous DRAM With Low 16-Mb Density in 50-Pin TSOP II Package

SAN CARLOS, Calif. — Feb. 27, 2013 — Alliance Memory today introduced a new high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from clock of 5.4 ns at a 7-ns clock cycle, and a fast clock rate of 143 MHz.

The device released today is optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and is particularly well-suited to high-performance PC applications. Internally configured as dual banks of 512K word x 16 bits with a synchronous interface, the SDRAM operates from a single +3.3-V (±0.3V) power supply, and is lead (Pb) and halogen free.

The AS4C1M16S provides programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Alliance Memory’s legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS4C1M16S is the latest in the company’s full line of high-speed SDRAMs, which now includes devices with densities of 16 Mb, 64 Mb, 128 Mb, and 256 Mb.

Samples and production quantities of the AS4C1M16S are available now, with lead times of six weeks for large orders.

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Press Releases

Alliance Memory Expands Lineup of CMOS DDR4 SDRAMs With New 16Gb Device; 1Gb x 16-bit DDR4 SDRAM Combines Low 1.2V Power Consumption With Fast Clock Speeds to 1600MHz and Transfer Rates to 3200 MT/s in 96-Ball FBGA Package

February 14, 2023

Alliance Memory Launches New LPSRAMs With Embedded Error-Correction Code; 1Mb and 4Mb Devices Boost Reliability Over Previous Generation Devices

January 25, 2023

Alliance Memory Expands Multiple I/O Serial NOR Flash Memory Series With New 1.8V, 128Mb Solutions; Supporting Single, Dual, and Quad SPI Modes, Devices Offer Fast Read Performance to 133MHz and Operate Over a Single 1.65V to 1.95V Power Supply

January 3, 2023

Alliance Memory Signs Rep Agreement With Eclipse Technologies to Support Customers in Wisconsin and Illinois

November 15, 2022

Alliance Memory to Highlight Latest SRAM, DRAM, eMMC, and Flash Memory ICs at electronica 2022

November 15, 2022

Alliance Memory Rounds Out DDR4 SDRAM Lineup With Six New 4Gb “A” Die Devices and 16Gb Option From Micron Technology; Devices Offer Improved Performance With Lower +1.2V Operating Voltages and Higher Speeds to 1600MHz in 96-Ball and 78-Ball FBGA Packages

September 8, 2022

Visit Alliance Memory at electronica 2022

August 4, 2022

Alliance Memory to Highlight Latest SRAM, DRAM, Flash, and Storage Memory ICs at Embedded World 2022

May 5, 2022

Visit Alliance Memory at Embedded World 2022

April 27, 2022

Alliance Memory 4GB and 8GB eMMC Solutions Simplify Designs and Save Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1, Industrial-Grade Devices Combine NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

January 31, 2022

Alliance Memory Signs Rep Agreement With ESI to Support Expanding Customer Base in Southeast and Central U.S.

January 20, 2022

Alliance Memory Cuts Lead Times for DRAMs and Micron NOR Flash Memory Products With Automotive Temperature Ratings

December 2, 2021

More Posts from this Category

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

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US Headquarters

Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




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