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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

May 1, 2013

Alliance Memory Launches New High-Density, Low-Power 32M CMOS SRAM Offering 2.7-V to 3.6-V Power Supply in 12-mm by 20-mm TSOP-I Package

SAN CARLOS, Calif. — May 1, 2013 — Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 32M IC (2M x 16 / 4M x 8 switchable), the company’s highest density low-power device to date. Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns, the AS6C3216 is optimized for low-power industrial, telecom, medical, and automotive applications, and it is particularly well-suited for battery backup non-volatile memory.

The device released today is offered in the 48-pin, 12-mm by 20-mm TSOP-I package. The AS6C3216 features low power consumption with a typical operating current of 45 mA and standby current of 10 µA. All inputs and outputs are fully TTL-compatible.

The AS6C3216 is fabricated using very high-performance, high-reliability CMOS technology, and its current is stable within the operating temperature range of – 40 °C to + 85 °C. The device offers fully static operation and tri-state output, and it features a data retention voltage of 1.2 V minimum.

Alliance Memory’s legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS6C3216 is the latest in the company’s full range of low-power SRAM products, which include devices with densities of 64K, 256K, 1M, 2M, 4M, 8M, 16M, and now, 32M.

Samples and production quantities of the AS6C3216 are available now, with lead times of six weeks for large orders.

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Press Releases

Alliance Memory Expands Lineup of CMOS DDR4 SDRAMs With New 16Gb Device; 1Gb x 16-bit DDR4 SDRAM Combines Low 1.2V Power Consumption With Fast Clock Speeds to 1600MHz and Transfer Rates to 3200 MT/s in 96-Ball FBGA Package

February 14, 2023

Alliance Memory Launches New LPSRAMs With Embedded Error-Correction Code; 1Mb and 4Mb Devices Boost Reliability Over Previous Generation Devices

January 25, 2023

Alliance Memory Expands Multiple I/O Serial NOR Flash Memory Series With New 1.8V, 128Mb Solutions; Supporting Single, Dual, and Quad SPI Modes, Devices Offer Fast Read Performance to 133MHz and Operate Over a Single 1.65V to 1.95V Power Supply

January 3, 2023

Alliance Memory Signs Rep Agreement With Eclipse Technologies to Support Customers in Wisconsin and Illinois

November 15, 2022

Alliance Memory to Highlight Latest SRAM, DRAM, eMMC, and Flash Memory ICs at electronica 2022

November 15, 2022

Alliance Memory Rounds Out DDR4 SDRAM Lineup With Six New 4Gb “A” Die Devices and 16Gb Option From Micron Technology; Devices Offer Improved Performance With Lower +1.2V Operating Voltages and Higher Speeds to 1600MHz in 96-Ball and 78-Ball FBGA Packages

September 8, 2022

Visit Alliance Memory at electronica 2022

August 4, 2022

Alliance Memory to Highlight Latest SRAM, DRAM, Flash, and Storage Memory ICs at Embedded World 2022

May 5, 2022

Visit Alliance Memory at Embedded World 2022

April 27, 2022

Alliance Memory 4GB and 8GB eMMC Solutions Simplify Designs and Save Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1, Industrial-Grade Devices Combine NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

January 31, 2022

Alliance Memory Signs Rep Agreement With ESI to Support Expanding Customer Base in Southeast and Central U.S.

January 20, 2022

Alliance Memory Cuts Lead Times for DRAMs and Micron NOR Flash Memory Products With Automotive Temperature Ratings

December 2, 2021

More Posts from this Category

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

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US Headquarters

Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




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