SAN CARLOS, Calif. — Sept. 18, 2013 — Alliance Memory today introduced a new line of high-speed CMOS double data rate synchronous DRAMs (DDR1 SDRAM) with densities of 64 Mb (AS4C4M16D1), 128 Mb (AS4C8M16D1), 256 Mb (AS4C16M16D1), and 512 Mb (AS4C32M16D1).

The devices released today provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in medical, communications, industrial, and consumer products requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications. Internally configured as four banks of 1M, 2M, 4M, or 8M word x 16 bits with a synchronous interface, the DDR1 SDRAMs operate from a single +2.5-V (± 0.2 V) power supply, and are lead (Pb) and halogen free.

The AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, and AS4C32M16D1 feature a fast clock rate of 200 MHz, a commercial temperature range of 0 °C to 70 °C, and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch. The DDR1 SDRAM’s provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Part Number	AS4C4M16D1	AS4C8M16D1	AS4C16M16D1	AS4C32M16D1
Density	64 Mb	128 Mb	256 Mb	512 Mb
Configuration	4M x 16 bit	8M x 16 bit	16M x 16 bit	32M x 16 bit
Clock Rate	200 MHz	200 MHz	200MHz	200 MHz
Date Rate	400 Mbps/pin	400 Mbps/pin	400 Mbps/pin	400 Mbps/pin
Package	66-pin TSOP II	66-pin TSOP II	66-pin TSOP II	66-pin TSOP II

Samples and production quantities of the new (all available now) AS4C16M16D1 and
AS4C32M16D are available now, with lead times of eight weeks. The AS4C4M16D1 and AS4C8M16D1 will be available in July. Pricing ranges from $0.85 to $1.60 per piece.