SAN CARLOS, Calif. — Nov. 5, 2013 — Alliance Memory today extended its 64M and 128M lines of high-speed CMOS synchronous DRAMs (SDRAM) with a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package.

The devices released today provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth. For these applications, the AS4C2M32S-7TCN and AS4C4M32S-7TCN feature fast access time from clock down to 5.4 ns and fast clock rates to 166 MHz.

Offering a commercial temperature range of 0 °C to 70 °C, the SDRAMs operate from a single +3.3-V (± 0.3 V) power supply and are lead (Pb)- and halogen-free. The devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

The AS4C2M32S-7TCN and AS4C4M32S-7TCN are the latest in Alliance Memory’s full line of high-speed SDRAMs, which includes devices with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages.

Part Number	AS4C2M32S-7TCN	AS4C4M32S-7TCN
Density	64 Mb	128 Mb
Configuration	2M x 32 bit	4M x 32 bit
Access Time	5.4 ns	5.5 ns
Clock Rate	143 MHz	166 MHz
Package	90-ball TFBGA	86-pin TSOP II

Samples and production quantities of the new SDRAMs are available now, with lead times of eight weeks for large orders. Pricing starts at $0.90 per piece for the AS4C2M32S-7TCN and $1.50 per piece for the AS4C4M32S-7TCN.