SAN CARLOS, Calif. — September 16, 2014 — Alliance Memory today introduced a new line of high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256-Mb, 512-Mb, 1-Gb, and 2-Gb devices are offered in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages.
With each new product generation, designers of today’s portable devices are tasked with providing more functionality in less space while using less power. To meet this demand, the devices released today feature auto temperature compensated self-refresh (ATCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required.
As the number of mobile DDR SDRAM suppliers continues to decrease, Alliance Memory is offering designers a new source for the low power consumption they require. The company’s AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1, and AS4C64M32MD1 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking devices.
With their double data rate architecture, the mobile DDR SDRAMs offer high-speed operation with clock rates of 166 MHz and 200 MHz. For optimal functionality in extreme environments, all devices are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges. The mobile DDR SDRAMs offer fully synchronous operation and provide programmable read or write burst lengths of 2, 4, 8, or 16. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.
| Part # | Density | Configuration | Clock Rate | Package | Temp. Range |
|---|---|---|---|---|---|
| AS4C16M16MD1-6BCN | 256M | 16M X 16 bit | 166 MHz | 60-ball FPBGA | -30 °C to +85 °C |
| AS4C16M16MD1-6BIN | 256M | 16M X 16 bit | 166 MHz | 60-ball FPBGA | -40 °C to +85 °C |
| AS4C32M16MD1-5BCN | 512M | 32M X 16 bit | 200 MHz | 60-ball FPBGA | -30 °C to +85 °C |
| AS4C32M16MD1-5BIN | 512M | 32M X 16 bit | 200 MHz | 60-ball FPBGA | -40 °C to +85 °C |
| AS4C16M32MD1-5BCN | 512M | 16M X 32 bit | 200 MHz | 90-ball FPBGA | -30 °C to +85 °C |
| AS4C16M32MD1-5BIN | 512M | 16M X 32 bit | 200 MHz | 90-ball FPBGA | -40 °C to +85 °C |
| AS4C64M16MD1-6BCN | 1 Gb | 64M X 16 bit | 166 MHz | 60-ball FPBGA | -30 °C to +85 °C |
| AS4C64M16MD1-6BIN | 1 Gb | 64M X 16 bit | 166 MHz | 60-ball FPBGA | -40 °C to +85 °C |
| AS4C32M32MD1-5BCN | 1 Gb | 32M X 32 bit | 200 MHz | 90-ball FPBGA | -30 °C to +85 °C |
| AS4C32M32MD1-5BIN | 1 Gb | 32M X 32 bit | 200 MHz | 90-ball FPBGA | -40 °C to +85 °C |
| AS4C64M32MD1-5BCN | 2 Gb | 64M X 32 bit | 200 MHz | 90-ball FPBGA | -30 °C to +85 °C |
| AS4C64M32MD1-5BIN | 2 Gb | 64M X 32 bit | 200 MHz | 90-ball FPBGA | -40 °C to +85 °C |
Samples of the new mobile DDR SDRAMs are available now, with lead times of six to eight weeks for production quantities.
