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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

September 16, 2014

Alliance Memory Launches New Low-Power, High-Speed Mobile CMOS DDR SDRAMs With 256-Mb, 512-Mb, 1-Gb, and 2-Gb Densities

SAN CARLOS, Calif. — September 16, 2014 — Alliance Memory today introduced a new line of high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256-Mb, 512-Mb, 1-Gb, and 2-Gb devices are offered in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages.

With each new product generation, designers of today’s portable devices are tasked with providing more functionality in less space while using less power. To meet this demand, the devices released today feature auto temperature compensated self-refresh (ATCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required.

As the number of mobile DDR SDRAM suppliers continues to decrease, Alliance Memory is offering designers a new source for the low power consumption they require. The company’s AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1, and AS4C64M32MD1 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking devices.

With their double data rate architecture, the mobile DDR SDRAMs offer high-speed operation with clock rates of 166 MHz and 200 MHz. For optimal functionality in extreme environments, all devices are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges. The mobile DDR SDRAMs offer fully synchronous operation and provide programmable read or write burst lengths of 2, 4, 8, or 16. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.

Part # Density Configuration Clock Rate Package Temp. Range
AS4C16M16MD1-6BCN 256M 16M X 16 bit 166 MHz 60-ball FPBGA -30 °C to +85 °C
AS4C16M16MD1-6BIN 256M 16M X 16 bit 166 MHz 60-ball FPBGA -40 °C to +85 °C
AS4C32M16MD1-5BCN 512M 32M X 16 bit 200 MHz 60-ball FPBGA -30 °C to +85 °C
AS4C32M16MD1-5BIN 512M 32M X 16 bit 200 MHz 60-ball FPBGA -40 °C to +85 °C
AS4C16M32MD1-5BCN 512M 16M X 32 bit 200 MHz 90-ball FPBGA -30 °C to +85 °C
AS4C16M32MD1-5BIN 512M 16M X 32 bit 200 MHz 90-ball FPBGA -40 °C to +85 °C
AS4C64M16MD1-6BCN 1 Gb 64M X 16 bit 166 MHz 60-ball FPBGA -30 °C to +85 °C
AS4C64M16MD1-6BIN 1 Gb 64M X 16 bit 166 MHz 60-ball FPBGA -40 °C to +85 °C
AS4C32M32MD1-5BCN 1 Gb 32M X 32 bit 200 MHz 90-ball FPBGA -30 °C to +85 °C
AS4C32M32MD1-5BIN 1 Gb 32M X 32 bit 200 MHz 90-ball FPBGA -40 °C to +85 °C
AS4C64M32MD1-5BCN 2 Gb 64M X 32 bit 200 MHz 90-ball FPBGA -30 °C to +85 °C
AS4C64M32MD1-5BIN 2 Gb 64M X 32 bit 200 MHz 90-ball FPBGA -40 °C to +85 °C

Samples of the new mobile DDR SDRAMs are available now, with lead times of six to eight weeks for production quantities.

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Press Releases

Alliance Memory Expands eMMC Offering With New 32GB, 64GB, and 128GB Solutions; Simplifying Designs and Saving Space in Consumer, Industrial, and Networking Applications, Industrial-Grade Devices Feature TLC NAND Flash Technology for Increased Reliability

September 21, 2023

Alliance Memory Introduces New Line of 1.8V and 3.3V SLC Parallel NAND Flash Memory Solutions; Compliant With the ONFI 1.0 Specification, 1Gb to 8Gb AS9F Series Devices Deliver Fast Block Erase Times Down to 3 ms

July 27, 2023

Alliance Memory 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs Combine Low-Voltage Operation of 0.6V With Fast Clock Speeds to 1.86GHz; Solutions Offer ~50% Reduction in Power Consumption Compared to LPDDR4 Devices, Increasing Power Efficiency and Performance

July 18, 2023

Alliance Memory Signs Rep Agreement With Electra Sales to Support Customers in Upstate New York

July 13, 2023

Alliance Memory 16GB eMMC Solution Simplifies Designs and Saves Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1, Industrial-Grade Device Combines NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

July 6, 2023

Alliance Memory Further Bolsters Presence in Asia With Appointment of Kelly Chien as Country Manager for Taiwan

June 26, 2023

Alliance Memory Appoints Tanya Frew as Business Development Manager, Europe

June 20, 2023

Alliance Memory Bolsters Presence in Asia with Appointment of Linus Park as Country Manager for Korea

May 18, 2023

Alliance Memory Expands Lineup of CMOS DDR4 SDRAMs With New 16Gb Device; 1Gb x 16-bit DDR4 SDRAM Combines Low 1.2V Power Consumption With Fast Clock Speeds to 1600MHz and Transfer Rates to 3200 MT/s in 96-Ball FBGA Package

February 14, 2023

Alliance Memory Launches New LPSRAMs With Embedded Error-Correction Code; 1Mb and 4Mb Devices Boost Reliability Over Previous Generation Devices

January 25, 2023

Alliance Memory Expands Multiple I/O Serial NOR Flash Memory Series With New 1.8V, 128Mb Solutions; Supporting Single, Dual, and Quad SPI Modes, Devices Offer Fast Read Performance to 133MHz and Operate Over a Single 1.65V to 1.95V Power Supply

January 3, 2023

Alliance Memory Signs Rep Agreement With Eclipse Technologies to Support Customers in Wisconsin and Illinois

November 15, 2022

More Posts from this Category

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

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US Headquarters

Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




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