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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

October 5, 2016

Alliance Memory’s New 512-Mb High-Speed Mobile SDR SDRAMs Lower Power Consumption and Extend Battery Life in Mobile Devices

SAN CARLOS, Calif. — October 5, 2016 — Alliance Memory today introduced two new high-speed CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life in mobile devices. Featuring low power consumption of 1.8 V and a number of power-saving features, the 512-Mb AS4C32M16MS and AS4C16M32MS are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages.
Designers of today’s mobile devices are tasked with providing more functionality in tighter spaces while using less power. To meet this demand, the MSDRs released today feature auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required.
“As devices such as smartphones and tablets become ubiquitous, consumers have begun to rely on mobile apps more than websites, and the vast majority utilize their smartphones when making purchasing decisions,” said David Bagby, president and CEO of Alliance Memory. “This has made extending battery life more important than ever, and reducing a DRAM’s average power consumption can have a big impact. Our new mobile SDR SDRAMs deliver these power savings in a compact footprint optimized for space-constrained designs.”
As the number of mobile SDR SDRAM suppliers continues to decrease, Alliance Memory is offering designers a new source and shorter lead times for DRAMs with the low power consumption they require. The company’s AS4C32M16MS and AS4C16M32MS provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking and telecommunications devices.
The AS4C32M16MS and AS4C16M32MS are internally configured as 4 banks x 8 Mbit x 16 and 4 banks x 4 Mbit x 32, respectively, and offer high-speed operation with clock rates up to 166 MHz. For optimal functionality in extreme environments, the devices are available in both extended commercial (-25 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges.
The MSDRs offer fully synchronous operation and provide programmable read or write burst lengths of 1, 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. The devices are lead (Pb)- and halogen-free.

Part number Configuration Clock rate Package Temp. range
AS4C32M16MS-7BCN 32M x 16 bit 133 MHz 54-ball FPBGA -25 °C to +85 °C
AS4C32M16MS-7BCNTR* 32M x 16 bit 133 MHz 54-ball FPBGA -25 °C to +85 °C
AS4C32M16MS-6BIN 32M x 16 bit 166 MHz 54-ball FPBGA -40 °C to +85 °C
AS4C32M16MS-6BINTR* 32M x 16 bit 166 MHz 54-ball FPBGA -40 °C to +85 °C
AS4C16M32MS-7BCN 16M x 32 bit 133 MHz 90-ball FPBGAA -25 °C to +85 °C
AS4C16M32MS-7BCNTR* 16M x 32 bit 133 MHz 90-ball FPBGAA -25 °C to +85 °C
AS4C16M32MS-6BIN 16M x 32 bit 166 MHz 90-ball FPBGAA -40 °C to +85 °C
AS4C16M32MS-6BINTR* 16M x 32 bit 166 MHz 90-ball FPBGAA -40 °C to +85 °C

*Tape-and-reel packaging
Samples and production quantities of the new MSDRs are available now, with lead times of eight weeks for production quantities. Pricing for U.S. delivery starts at $5 per piece in 1,000-piece quantities.

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Press Releases

Alliance Memory to Highlight Latest SRAM, DRAM, Flash, and Storage Memory ICs at Embedded World 2022

May 5, 2022

Visit Alliance Memory at Embedded World 2022

April 27, 2022

Alliance Memory 4GB and 8GB eMMC Solutions Simplify Designs and Save Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1, Industrial-Grade Devices Combine NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

January 31, 2022

Alliance Memory Signs Rep Agreement With ESI to Support Expanding Customer Base in Southeast and Central U.S.

January 20, 2022

Alliance Memory Cuts Lead Times for DRAMs and Micron NOR Flash Memory Products With Automotive Temperature Ratings

December 2, 2021

Alliance Memory Introduces New Series of 3V Multiple I/O Serial NOR Flash Memory Solutions; AS25F Series Devices Provide Supply Continuity for Micron Technology’s Discontinued N25Q Line

October 21, 2021

Alliance Memory in Stock With Scarce Genuine Micron NOR Flash Memory Products; Offering Includes M29F, M45PE, N25Q, J3, and P30/P33 Families

August 4, 2021

Alliance Memory 8Gb LPDDR4X SDRAM Offers ~50% Reduction in Power Consumption Compared to LPDDR4 Devices; With Low-Voltage Operation of 0.6V and Fast Clock Speeds of 1.6GHz, Device Extends Battery Life in Portable Electronics, Increases Power Efficiency and Performance

July 14, 2021

Alliance Memory Appoints Alistair Jones as Regional Sales Manager for Northern Europe

June 23, 2021

Alliance Memory Moves Taiwan Office to Larger Facility to Accommodate Global Growth

June 16, 2021

Alliance Memory Announces ISO 9001:2015 Recertification

March 24, 2021

Alliance Memory Appoints Viorel Toadere as Regional Manager for Eastern Europe

February 22, 2021

More Posts from this Category

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

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Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




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