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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

October 11, 2016

Alliance Memory at Electronica 2016

At electronica 2016, Alliance Memory will be highlighting its latest high-speed CMOS synchronous DRAMs (SDRAM), including newly released low-power mobile (MSDR), double data rate (DDR), DDR2, mobile low-power DDR2 (LPDDR2), and DDR3 SDRAMs in a variety of densities. The company will also highlight its collaboration with Micron Semiconductor to offer discontinued 512-Mb SDRAMs. In addition, Alliance Memory will be showcasing 16-Mb fast CMOS SRAMs in a wide range of package options.

Alliance Memory’s ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources.

New Alliance Memory Products on Display at electronica 2016

Alliance Memory Successfully Collaborates With Micron Semiconductor to Offer Discontinued 512-Mb Synchronous DRAMs (SDRAM)

Alliance Memory offers Micron Semiconductor 512-Mb SDRAMs in the 54-pin TSOP II package with commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges and operation from a single +3.3-V (±0.3 V) power supply. Lead (Pb)- and halogen-free, the MT48LC32M16A2P-75:C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are PC100- and PC133-compliant.

High-Speed, Low-Power CMOS Mobile Synchronous DRAMs (MSDR)

Alliance Memory will introduce two new high-speed, low-power CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life in mobile devices. The 512-Mb AS4C32M16MS and AS4C16M32MS are internally configured as four banks of 32M word x 16 bits and 16M word x 32 bits and are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages, respectively. The devices feature low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode. The MSDRs offer high-speed operation with clock rates up to 166 MHz and are available in both extended commercial (-25 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges.

High-Speed CMOS Double Data Rate Synchronous DRAMs (DDR SDRAM)

Alliance Memory is introducing a new 1-Gb high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) in the 66-pin TSOP II package. Internally configured as four banks of 64M word x 16 bits, the AS4C64M16D1 features a fast clock rate of 166 MHz and operates from a single +2.5-V (±0.2 V) power supply. The device is available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges.

High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAM)

Alliance Memory’s lineup of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) includes 2-Gb devices with fast clock rates of 400 MHz and data rates of 800 Mbps/pin. Offering high density, the 128M x 16 AS4C128M16D2 is available in the 84-ball, 8-mm by 12.5-mm by 1.2-mm FBGA package, while the 256M x 8 AS4C256M8D2 features the 60-ball, 8-mm by 10-mm by 1.2-mm FBGA package. The devices are available in commercial (0 °C to +85 °C) and industrial (-40 °C to +95 °C) temperature ranges, and they operate from a single +1.8-V (±0.1 V) power supply.

High-Speed CMOS Mobile Low-Power Double Data Rate 2 (LPDDR2) Synchronous DRAMs (SDRAM)

Alliance Memory has expanded its offering of mobile low-power synchronous DRAMs (SDRAM) with new double data rate 2 (LPDDR2) components featuring densities of 1 Gb, 2 Gb, 4 Gb, and 8 Gb in 134-ball FBGA packages. Designed to increase efficiency and extend battery life in compact portable devices, the ICs offer low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode. The LPDDR2s provide high-speed operation with clock rates of 400 MHz and 533 MHz, and they are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges.

High-Speed CMOS Double Data Rate 3 Synchronous DRAMs (DDR3 SDRAM)

Alliance Memory’s offering of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) includes new monolithic, low-voltage 8-Gb devices with extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. The 1G x 8 AS4C1G8MD3L and 512M x 16 AS4C512M16D3L are available in the 78-ball and 96-ball FBGA packages, respectively. The ICs operate from a single +1.35-V power supply and are backwards-compatible with +1.5-V power supplies to enable large memory subsystems. The DDR3 SDRAMs are available with an extended commercial temperature range of 0 °C to +95 °C and an industrial temperature range of -40 °C to +95 °C.

DRAMs for Automotive Applications

Alliance Memory’s DRAM portfolio features a wide variety of components that provide an automotive temperature range of -40 °C to +105 °C. Automotive synchronous DRAMs (SDRAM) include 64-Mb, 128-Mb, and 256-Mb devices with clock rates of 166 MHz in 54-pin TSOP II and 54-ball FBGA packages. Double data rate (DDR) SDRAMs include 64-Mb 4M x 16 devices with data rates of 400 Mbps/pin in the 66-pin TSOP II. Available in densities of 512 Mb and 1 Gb in the 84-ball and 60-ball FBGA packages, automotive double data rate 2 (DDR2) SDRAMs operate from a low 1.8-V power supply and deliver data rates of 800 Mbps/pin. 1-Gb to 4-Gb double data rate 3 (DDR3) SDRAMs feature data rates of 1600 Mbps/pin and operate from 1.35-V power supplies.

Fast CMOS SRAMS

Featuring access times of 10 ns, Alliance Memory’s offering of fast CMOS SRAMs includes 16-Mb devices configured as 2048K x 8 and 1024K x 16 in TSOP I, TSOP II, and TFGBA packages. The components provide low power consumption with operating currents down to 70 mA typical and standby currents of 4 mA typical. The SRAMs operate from a single power supply of 3.3 V and offer a temperature range of -40 °C to +85 °C.

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Press Releases

Alliance Memory Expands Lineup of CMOS DDR4 SDRAMs With New 16Gb Device; 1Gb x 16-bit DDR4 SDRAM Combines Low 1.2V Power Consumption With Fast Clock Speeds to 1600MHz and Transfer Rates to 3200 MT/s in 96-Ball FBGA Package

February 14, 2023

Alliance Memory Launches New LPSRAMs With Embedded Error-Correction Code; 1Mb and 4Mb Devices Boost Reliability Over Previous Generation Devices

January 25, 2023

Alliance Memory Expands Multiple I/O Serial NOR Flash Memory Series With New 1.8V, 128Mb Solutions; Supporting Single, Dual, and Quad SPI Modes, Devices Offer Fast Read Performance to 133MHz and Operate Over a Single 1.65V to 1.95V Power Supply

January 3, 2023

Alliance Memory Signs Rep Agreement With Eclipse Technologies to Support Customers in Wisconsin and Illinois

November 15, 2022

Alliance Memory to Highlight Latest SRAM, DRAM, eMMC, and Flash Memory ICs at electronica 2022

November 15, 2022

Alliance Memory Rounds Out DDR4 SDRAM Lineup With Six New 4Gb “A” Die Devices and 16Gb Option From Micron Technology; Devices Offer Improved Performance With Lower +1.2V Operating Voltages and Higher Speeds to 1600MHz in 96-Ball and 78-Ball FBGA Packages

September 8, 2022

Visit Alliance Memory at electronica 2022

August 4, 2022

Alliance Memory to Highlight Latest SRAM, DRAM, Flash, and Storage Memory ICs at Embedded World 2022

May 5, 2022

Visit Alliance Memory at Embedded World 2022

April 27, 2022

Alliance Memory 4GB and 8GB eMMC Solutions Simplify Designs and Save Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1, Industrial-Grade Devices Combine NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

January 31, 2022

Alliance Memory Signs Rep Agreement With ESI to Support Expanding Customer Base in Southeast and Central U.S.

January 20, 2022

Alliance Memory Cuts Lead Times for DRAMs and Micron NOR Flash Memory Products With Automotive Temperature Ratings

December 2, 2021

More Posts from this Category

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

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US Headquarters

Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




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