Highlights to Include Micron Technology 512-Mb Devices; Low-Power Mobile ICs; DDR, DDR2, and DDR3 SRAMs; and Automotive Components
SAN CARLOS, Calif. — Nov. 2, 2016 — Alliance Memory today announced its technology lineup for electronica 2016, taking place Nov. 8-11 at the Munich Trade Fair Centre in Munich, Germany. In booth A5.224, the company will be highlighting its latest high-speed CMOS synchronous DRAMs (SDRAM), including new low-power mobile (MSDR), double data rate (DDR), DDR2, mobile low-power DDR2 (LPDDR2), and DDR3 SDRAMs in a variety of densities. The company will also highlight its offering of discontinued Micron Technology 512-Mb SDRAMs and a variety of components for automotive applications. In addition, Alliance Memory will showcase 16-Mb fast CMOS SRAMs in a wide range of packages.
At electronica 2016, Alliance Memory will highlight Micron Technology 512-Mb SDRAMs in the 54-pin TSOP II package with commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges and operation from a single +3.3-V (±0.3 V) power supply. Lead (Pb)- and halogen-free, the MT48LC32M16A2P-75:C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are PC100- and PC133-compliant.
To extend battery life in mobile devices, Alliance Memory will showcase new 512-Mb MSDRs in 54-ball and 90-ball FPBGA packages, and LPDDR2 components featuring densities of 1 Gb, 2 Gb, 4 Gb, and 8 Gb in 134-ball FBGA packages. The ICs offer low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode.
DDR SDRAMs on display at electronica 2016 will include a new 1-Gb device with a fast clock rate of 166 MHz in the 66-pin TSOP package. Offered in 84-ball and 60-ball FBGA packages, highlighted DDR2 SDRAMs will feature fast clock rates of 400 MHz and data rates of 800 Mbps/pin. DDR3 SDRAMs on display will include new monolithic, low-voltage 8-Gb devices with extremely fast transfer rates of up to 1600 Mbps/pin, clock rates of 800 MHz, and backwards-compatibility with +1.5-V power supplies to enable large memory subsystems.
Alliance Memory will highlight a wide variety of components that provide an automotive temperature range of -40 °C to +105 °C. Featured ICs will include 64-Mb, 128-Mb, and 256-Mb SDRAMs with clock rates of 166 MHz in 54-pin TSOP II and 54-ball FBGA packages; 64-Mb DDR SDRAMs with data rates of 400 Mbps/pin in the 66-pin TSOP II; 512-Mb and 1-Gb DDR2 SDRAMs in 84-ball and 60-ball FBGA packages with data rates of 800 Mbps/pin; and 1-Gb to 4-Gb DDR3 SDRAMs that feature data rates of 1600 Mbps/pin.
In addition to its SDRAMs, Alliance Memory will be showcasing its offering of fast CMOS SRAMs. Featuring access times of 10 ns, components on display will include 16-Mb devices in TSOP I, TSOP II, and TFGBA packages. The ICs provide low power consumption with operating currents down to 70 mA typical and standby currents of 4 mA typical.
Alliance Memory’s ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources.
electronica is the world’s leading trade fair for components, systems, and applications. More information on the event is available at http://www.electronica.de/.