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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

June 7, 2017

Alliance Memory Introduces New Die Version for 2Gb and 4Gb DDR3 and DDR3L SDRAMs; Provides New Memory Chip Source in Face of Market Shortages

SAN CARLOS, Calif. — June 7, 2017 — To address the memory market’s shortage of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs, Alliance Memory today announced a new die revision (B die) for its 2Gb and 4Gb devices in the 96-ball FBGA package.

“Market demand for DDR3 and DDR3L SDRAMs is extremely high due to their increased functionality and speed, but their availability is becoming more and more limited as demand exceeds supply and suppliers move capacity to Flash and other products,” said TJ Mueller, Vice President of Marketing at Alliance Memory. “With the introduction of a new B die version, we now have two sources for our 2Gb and 4Gb parts’ silicon. This means our customers can be more confident than ever in our ability to deliver these devices despite shortages and price increases in the memory market.”

The DDR architecture of Alliance Memory’s 2Gb and 4Gb DDR3 and DDR3L SDRAMs allows them to achieve extremely fast transfer rates of 1600Mbps and clock rates of 800MHz. With minimal die shrinks, the devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in newer-generation microprocessors for networking, industrial, medical, telecom, and consumer applications — eliminating the need for costly redesigns and part requalification.

The 2Gb AS4C128M16D3B-12BCN and 4Gb AS4C256M16D3B-12BCN DDR3 SDRAMs operate from a single +1.5V (±0.075V) power supply, while the 4 Gb AS4C256M16D3LB-12BCN DDR3L SDRAM operates from a single +1.35V power supply. The devices offer a data mask for write control and are available with a commercial temperature range of 0°C to +95°C. The 4Gb DDR3L SDRAM is also available in an industrial temperature range of -40°C to +95°C.

The 2Gb DDR3 SDRAMs are internally configured as eight banks of 16M word x 16 bits, while the 4Gb DDR3 and DDR3L SDRAMs are configured as eight banks of 32M word x 16 bits. All devices support sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.

Device Specification Table:

Part number Density Configuration Power supply Temp. range Package
AS4C128M16D3B-12BCN 2Gb 128M x 16 bit +1.5V 0°C to +95°C 96-ball FBGA
AS4C128M16D3LB-12BCN 2Gb 128M x 16 bit +1.35V 0°C to +95°C 96-ball FBGA
AS4C256M16D3B-12BCN 4Gb 256M x 16 bit +1.5V 0°C to +95°C 96-ball FBGA
AS4C256M16D3LB-12BCN 4Gb 256M x 16 bit +1.35V 0°C to +95°C 96-ball FBGA
AS4C256M16D3LB-12BIN 4Gb 256M x 16 bit +1.35V -40°C to +95°C 96-ball FBGA

B die DDR3 and DDR3L SDRAMs are available now, with lead times of four to eight weeks for production quantities. Pricing for U.S. delivery starts at $4.95 per piece in 1,000-piece quantities.

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Press Releases

Alliance Memory to Highlight Latest SRAM, DRAM, Flash, and Storage Memory ICs at Embedded World 2022

May 5, 2022

Visit Alliance Memory at Embedded World 2022

April 27, 2022

Alliance Memory 4GB and 8GB eMMC Solutions Simplify Designs and Save Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1, Industrial-Grade Devices Combine NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

January 31, 2022

Alliance Memory Signs Rep Agreement With ESI to Support Expanding Customer Base in Southeast and Central U.S.

January 20, 2022

Alliance Memory Cuts Lead Times for DRAMs and Micron NOR Flash Memory Products With Automotive Temperature Ratings

December 2, 2021

Alliance Memory Introduces New Series of 3V Multiple I/O Serial NOR Flash Memory Solutions; AS25F Series Devices Provide Supply Continuity for Micron Technology’s Discontinued N25Q Line

October 21, 2021

Alliance Memory in Stock With Scarce Genuine Micron NOR Flash Memory Products; Offering Includes M29F, M45PE, N25Q, J3, and P30/P33 Families

August 4, 2021

Alliance Memory 8Gb LPDDR4X SDRAM Offers ~50% Reduction in Power Consumption Compared to LPDDR4 Devices; With Low-Voltage Operation of 0.6V and Fast Clock Speeds of 1.6GHz, Device Extends Battery Life in Portable Electronics, Increases Power Efficiency and Performance

July 14, 2021

Alliance Memory Appoints Alistair Jones as Regional Sales Manager for Northern Europe

June 23, 2021

Alliance Memory Moves Taiwan Office to Larger Facility to Accommodate Global Growth

June 16, 2021

Alliance Memory Announces ISO 9001:2015 Recertification

March 24, 2021

Alliance Memory Appoints Viorel Toadere as Regional Manager for Eastern Europe

February 22, 2021

More Posts from this Category

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

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US Headquarters

Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




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