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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

June 7, 2017

Alliance Memory Introduces New Die Version for 2Gb and 4Gb DDR3 and DDR3L SDRAMs; Provides New Memory Chip Source in Face of Market Shortages

SAN CARLOS, Calif. — June 7, 2017 — To address the memory market’s shortage of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs, Alliance Memory today announced a new die revision (B die) for its 2Gb and 4Gb devices in the 96-ball FBGA package.

“Market demand for DDR3 and DDR3L SDRAMs is extremely high due to their increased functionality and speed, but their availability is becoming more and more limited as demand exceeds supply and suppliers move capacity to Flash and other products,” said TJ Mueller, Vice President of Marketing at Alliance Memory. “With the introduction of a new B die version, we now have two sources for our 2Gb and 4Gb parts’ silicon. This means our customers can be more confident than ever in our ability to deliver these devices despite shortages and price increases in the memory market.”

The DDR architecture of Alliance Memory’s 2Gb and 4Gb DDR3 and DDR3L SDRAMs allows them to achieve extremely fast transfer rates of 1600Mbps and clock rates of 800MHz. With minimal die shrinks, the devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in newer-generation microprocessors for networking, industrial, medical, telecom, and consumer applications — eliminating the need for costly redesigns and part requalification.

The 2Gb AS4C128M16D3B-12BCN and 4Gb AS4C256M16D3B-12BCN DDR3 SDRAMs operate from a single +1.5V (±0.075V) power supply, while the 4 Gb AS4C256M16D3LB-12BCN DDR3L SDRAM operates from a single +1.35V power supply. The devices offer a data mask for write control and are available with a commercial temperature range of 0°C to +95°C. The 4Gb DDR3L SDRAM is also available in an industrial temperature range of -40°C to +95°C.

The 2Gb DDR3 SDRAMs are internally configured as eight banks of 16M word x 16 bits, while the 4Gb DDR3 and DDR3L SDRAMs are configured as eight banks of 32M word x 16 bits. All devices support sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.

Device Specification Table:

Part number Density Configuration Power supply Temp. range Package
AS4C128M16D3B-12BCN 2Gb 128M x 16 bit +1.5V 0°C to +95°C 96-ball FBGA
AS4C128M16D3LB-12BCN 2Gb 128M x 16 bit +1.35V 0°C to +95°C 96-ball FBGA
AS4C256M16D3B-12BCN 4Gb 256M x 16 bit +1.5V 0°C to +95°C 96-ball FBGA
AS4C256M16D3LB-12BCN 4Gb 256M x 16 bit +1.35V 0°C to +95°C 96-ball FBGA
AS4C256M16D3LB-12BIN 4Gb 256M x 16 bit +1.35V -40°C to +95°C 96-ball FBGA

B die DDR3 and DDR3L SDRAMs are available now, with lead times of four to eight weeks for production quantities. Pricing for U.S. delivery starts at $4.95 per piece in 1,000-piece quantities.

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Press Releases

Alliance Memory Expands eMMC Offering With New 32GB, 64GB, and 128GB Solutions; Simplifying Designs and Saving Space in Consumer, Industrial, and Networking Applications, Industrial-Grade Devices Feature TLC NAND Flash Technology for Increased Reliability

September 21, 2023

Alliance Memory Introduces New Line of 1.8V and 3.3V SLC Parallel NAND Flash Memory Solutions; Compliant With the ONFI 1.0 Specification, 1Gb to 8Gb AS9F Series Devices Deliver Fast Block Erase Times Down to 3 ms

July 27, 2023

Alliance Memory 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs Combine Low-Voltage Operation of 0.6V With Fast Clock Speeds to 1.86GHz; Solutions Offer ~50% Reduction in Power Consumption Compared to LPDDR4 Devices, Increasing Power Efficiency and Performance

July 18, 2023

Alliance Memory Signs Rep Agreement With Electra Sales to Support Customers in Upstate New York

July 13, 2023

Alliance Memory 16GB eMMC Solution Simplifies Designs and Saves Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1, Industrial-Grade Device Combines NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

July 6, 2023

Alliance Memory Further Bolsters Presence in Asia With Appointment of Kelly Chien as Country Manager for Taiwan

June 26, 2023

Alliance Memory Appoints Tanya Frew as Business Development Manager, Europe

June 20, 2023

Alliance Memory Bolsters Presence in Asia with Appointment of Linus Park as Country Manager for Korea

May 18, 2023

Alliance Memory Expands Lineup of CMOS DDR4 SDRAMs With New 16Gb Device; 1Gb x 16-bit DDR4 SDRAM Combines Low 1.2V Power Consumption With Fast Clock Speeds to 1600MHz and Transfer Rates to 3200 MT/s in 96-Ball FBGA Package

February 14, 2023

Alliance Memory Launches New LPSRAMs With Embedded Error-Correction Code; 1Mb and 4Mb Devices Boost Reliability Over Previous Generation Devices

January 25, 2023

Alliance Memory Expands Multiple I/O Serial NOR Flash Memory Series With New 1.8V, 128Mb Solutions; Supporting Single, Dual, and Quad SPI Modes, Devices Offer Fast Read Performance to 133MHz and Operate Over a Single 1.65V to 1.95V Power Supply

January 3, 2023

Alliance Memory Signs Rep Agreement With Eclipse Technologies to Support Customers in Wisconsin and Illinois

November 15, 2022

More Posts from this Category

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

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US Headquarters

Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




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