• Skip to primary navigation
  • Skip to content
  • Skip to primary sidebar
  • Skip to footer
Shop Memory, Buy Now Product Listing Download Cross Reference Guide
  • Contact Us
  • About
  • Support
    • Technical Support
    • Product Longevity Statement
    • Terms and Conditions
    • Quality Policy
    • Packaging Quantities
    • Packing Procedures
    • SECURITY
    • End of Life Memory Products
  • Where to Buy-Distributors
    • North American Distributors
    • Latin America & SE Asia Distributors
    • Europe, Middle East, Africa Distributors
    • Pacific Rim Distributors
  • Solutions
    • Cypress CY62256 Replacement
    • Micron 8G DDR3L SDRAM
    • Micron NOR Flash
    • Processor Compatibility Options
      • Analog Devices
      • Atmel/Microchip Technology
      • GOWIN
      • Intel Corporation
      • Lattice Semiconductor
      • Marvell / Cavium
      • NXP Semiconductors
      • Rockchip SoCs
      • STMicroelectronics
      • Texas Instruments
      • Xilinx, Inc.
  • Applications
    • Automotive
    • Mobile and Embedded
    • Medical
  • Products
    • Full Product Catalog
    • DRAMs
      • Micron DRAMs
      • Synchronous DRAMs
      • DDR SDRAM
      • DDR2 SDRAM
      • DDR3 SDRAM
      • DDR4 SDRAM
      • LPDDR Mobile DDR
      • LPDDR2 Mobile DDR 2
      • LPDDR4/X Mobile DDR 4/X
      • LPSDR SDRAM – Mobile SDR
    • SRAMs
      • Fast Asynchronous SRAMs
      • Psuedo SRAMs (PSRAM)
      • Low Power Asynchronous SRAM
      • Synchronous SRAMs
      • ZMD Low Power Asynchronous SRAMs
    • FLASH & Storage
      • Parallel NOR Flash
        • Parallel NOR Flash (5V)
        • Micron M29F NOR Flash (5V)
        • Micron J3/P30/P33 Parallel NOR
      • Serial NOR Flash
        • Micron M45PE Serial NOR Flash
        • Micron N25Q Serial NOR Flash
        • AS25F Serial NOR Flash
      • Serial NAND Flash
      • eMMC

Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

July 10, 2016

New Product Announcement: New Monolithic High-Speed, Low-Voltage 1G x 8 CMOS DDR3L SDRAM

AS4C1G8MD3L: New Monolithic High-Speed, Low-Voltage 1G x 8 CMOS DDR3L SDRAM
AS4C1G8MD3L
The News: Alliance Memory introduces a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gb density in the 78-ball, 9-mm by 13.2-mm, lead (Pb)-free FBGA package. Delivering increased power efficiency for high-end computer and storage systems, the 1G x 8 AS4C1G8MD3L offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.

Key Specifications and Benefits:

  • Internally configured as eight banks of 1G x 8 bits
  • Offered in the 78-ball, 9-mm by 13.2-mm FBGA package
  • Extremely fast transfer rates of up to 1600 Mbps/pin
  • Clock rates of 800 MHz
  • Operates from a single +1.35-V power supply
  • Available with an extended commercial temperature range of 0 °C to +95 °C (AS4C1G8MD3L-12BCN)
  • Fast 64-ms, 8192-cycle refresh from 0 °C to +85 °C and 32 ms from +85 °C to +95 °C
  • Fully synchronous operation
  • Programmable read or write burst lengths of 4 or 8
  • Auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Programmable mode register allows the system to choose the most suitable modes to maximize performance
  • Lead (Pb)-free

Target Applications:

  • Industrial, medical, networking, telecom, and aerospace applications

The Context: Featuring a double data rate architecture, the AS4C1G8MD3L’s transfer rates are twice as high as DDR and DDR2 SDRAMs, providing higher bandwidth for newer-generation microprocessors in industrial, medical, networking, telecom, and aerospace applications. Backwards-compatible with +1.5-V power supplies to enable large memory subsystems, the device is a logical choice for customers that require increased memory yet face board space constraints.

In addition to the 1G x 8 AS4C1G8MD3L, Alliance Memory also offers the 512M x 16 AS4C512M16D3L in the 96-ball FBGA package, which is available in an extended commercial temperature range (AS4C512M16D3L-12BCN) and an industrial temperature range from -40 °C to +95 °C (AS4C512M16D3L-12BIN). Alliance Memory is one of the few suppliers of monolithic DDR3L SDRAMs with high densities to 8 Gb. In addition, with minimal die shrinks, the single-die AS4C1G8MD3L provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions — eliminating the need for costly redesigns and part requalification.

Availability: Samples and production quantities of the new 8-GB DDR3L SDRAM are available now, with lead times of six to eight weeks.

Click to download the AS4C1G8MD3L datasheet.

Contact David Bagby, david@alliancememory.com, +1 650 610-6800

Primary Sidebar

Publications

  • Press Releases
  • New Product Announcements
  • Newsletters
  • Industry Articles
  • Testimonials
  • Media

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

Footer

US Headquarters

Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




© 2022 Alliance Memory

Reference:

  • Contact Us
  • Newsletters
  • New Product Announcements
  • Press Releases
  • Testimonials
  • Terms and Conditions
  • Privacy Policy

Sign up for our Newsletter:

Front Page Newsletter Sign Up

  • This field is for validation purposes and should be left unchanged.
Visit Us On LinkedinVisit Us On YoutubeVisit Us On TwitterVisit Us On Facebook