New Product Announcement:New 512-Mb High-Speed Mobile SDR SDRAMs

AS4C32M16MS and AS4C16M32MS: New 512-Mb High-Speed Mobile SDR SDRAMs

The News: Alliance Memory introduces two new high-speed CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life
in mobile devices. Featuring low power consumption of 1.8 V and a number of power-saving features, the 512-Mb AS4C32M16MS and AS4C16M32MS are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages.

Key Specifications and Benefits:

• Low power consumption of 1.8 V
• Offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm
  90-ball FPBGA packages
• Power-saving features:
  • Auto temperature-compensated self-refresh (TCSR)
  • Partial-array self-refresh (PASR)
  • Deep power down (DPD)
• Internally configured as 4 banks x 8 Mbit x 16 and 4 banks x 4 Mbit x 32
• High-speed operation with clock rates up to 166 MHz
• Available in extended commercial (-25 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges
• Fully synchronous operation
• Programmable read or write burst lengths of 1, 2, 4, or 8
• Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
• Easy-to-use refresh functions include auto- or self-refresh
• Lead (Pb)- and halogen-free

Target Applications:

• Portable consumer electronics, medical equipment, and networking and telecommunications devices

The Context: As devices such as smartphones and tablets become ubiquitous, consumers have begun to rely on mobile apps more than websites, and the vast majority utilize their smartphones when making purchasing decisions. This has made extending battery life more important than ever, and reducing a DRAM’s average power consumption can have a big impact.

Alliance Memory’s new AS4C32M16MS and AS4C16M32MS deliver these power savings in a compact footprint optimized for space-constrained designs. The MSDRs feature auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required.

As the number of mobile SDR SDRAM suppliers continues to decrease, Alliance Memory is offering designers a new source and shorter lead times for DRAMs with the low power consumption they require. The company’s AS4C32M16MS and AS4C16M32MS provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking and telecommunications devices.

Availability: Samples and production quantities of the new MSDRs are available now, with lead times of eight weeks for production quantities.

Click to download the AS4C32M16MS and AS4C16M32MS datasheets.

Contact David Bagby, david@alliancememory.com, +1 650 610-6800