• Skip to primary navigation
  • Skip to content
  • Skip to primary sidebar
  • Skip to footer
Shop Memory, Buy Now Product Listing Download Cross Reference Guide
  • Contact Us
  • About
  • Support
    • Technical Support
    • Product Longevity Statement
    • Terms and Conditions
    • Quality Policy
    • Packaging Quantities
    • Packing Procedures
    • SECURITY
    • End of Life Memory Products
  • Where to Buy-Distributors
    • North American Distributors
    • Latin America & SE Asia Distributors
    • Europe, Middle East, Africa Distributors
    • Pacific Rim Distributors
  • Solutions
    • Cypress CY62256 Replacement
    • Micron 8G DDR3L SDRAM
    • Micron NOR Flash
    • Processor Compatibility Options
      • Analog Devices
      • Atmel/Microchip Technology
      • GOWIN
      • Intel Corporation
      • Lattice Semiconductor
      • Marvell / Cavium
      • NXP Semiconductors
      • Rockchip SoCs
      • STMicroelectronics
      • Texas Instruments
      • Xilinx, Inc.
  • Applications
    • Automotive
    • Mobile and Embedded
    • Medical
  • Products
    • Full Product Catalog
    • DRAMs
      • Micron DRAMs
      • Synchronous DRAMs
      • DDR SDRAM
      • DDR2 SDRAM
      • DDR3 SDRAM
      • DDR4 SDRAM
      • LPDDR Mobile DDR
      • LPDDR2 Mobile DDR 2
      • LPDDR4/X Mobile DDR 4/X
      • LPSDR SDRAM – Mobile SDR
    • SRAMs
      • Fast Asynchronous SRAMs
      • Psuedo SRAMs (PSRAM)
      • Low Power Asynchronous SRAM
      • Synchronous SRAMs
      • ZMD Low Power Asynchronous SRAMs
    • FLASH & Storage
      • Parallel NOR Flash
        • Parallel NOR Flash (5V)
        • Micron M29F NOR Flash (5V)
        • Micron J3/P30/P33 Parallel NOR
      • Serial NOR Flash
        • Micron M45PE Serial NOR Flash
        • Micron N25Q Serial NOR Flash
        • AS25F Serial NOR Flash
      • Serial NAND Flash
      • eMMC

Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

October 10, 2016

New Product Announcement:New 512-Mb High-Speed Mobile SDR SDRAMs

AS4C32M16MS and AS4C16M32MS: New 512-Mb High-Speed Mobile SDR SDRAMs

AS4C32M16MSThe News: Alliance Memory introduces two new high-speed CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life
in mobile devices. Featuring low power consumption of 1.8 V and a number of power-saving features, the 512-Mb AS4C32M16MS and AS4C16M32MS are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages.

Key Specifications and Benefits:

  • Low power consumption of 1.8 V
  • Offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm
    90-ball FPBGA packages
  • Power-saving features:
    • Auto temperature-compensated self-refresh (TCSR)
    • Partial-array self-refresh (PASR)
    • Deep power down (DPD)
  • Internally configured as 4 banks x 8 Mbit x 16 and 4 banks x 4 Mbit x 32
  • High-speed operation with clock rates up to 166 MHz
  • Available in extended commercial (-25 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges
  • Fully synchronous operation
  • Programmable read or write burst lengths of 1, 2, 4, or 8
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Lead (Pb)- and halogen-free

Target Applications:

  • Portable consumer electronics, medical equipment, and networking and telecommunications devices

The Context: As devices such as smartphones and tablets become ubiquitous, consumers have begun to rely on mobile apps more than websites, and the vast majority utilize their smartphones when making purchasing decisions. This has made extending battery life more important than ever, and reducing a DRAM’s average power consumption can have a big impact.

Alliance Memory’s new AS4C32M16MS and AS4C16M32MS deliver these power savings in a compact footprint optimized for space-constrained designs. The MSDRs feature auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required.

As the number of mobile SDR SDRAM suppliers continues to decrease, Alliance Memory is offering designers a new source and shorter lead times for DRAMs with the low power consumption they require. The company’s AS4C32M16MS and AS4C16M32MS provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking and telecommunications devices.

Availability: Samples and production quantities of the new MSDRs are available now, with lead times of eight weeks for production quantities.

Click to download the AS4C32M16MS and AS4C16M32MS datasheets.

Contact David Bagby, david@alliancememory.com, +1 650 610-6800

 

Primary Sidebar

Publications

  • Press Releases
  • New Product Announcements
  • Newsletters
  • Industry Articles
  • Testimonials
  • Media

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

Footer

US Headquarters

Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




© 2022 Alliance Memory

Reference:

  • Contact Us
  • Newsletters
  • New Product Announcements
  • Press Releases
  • Testimonials
  • Terms and Conditions
  • Privacy Policy

Sign up for our Newsletter:

Front Page Newsletter Sign Up

  • This field is for validation purposes and should be left unchanged.
Visit Us On LinkedinVisit Us On YoutubeVisit Us On TwitterVisit Us On Facebook