BREAKING: ALLIANCE MEMORY PARTNERS WITH MICRON TECHNOLOGY TO EXTEND 512M SDRAM PRODUCT LIFE CYCLE
Alliance Memory is partnering with Micron Technology to supply and extend availability of support for three 512M synchronous DRAM (SDRAM) devices that Micron discontinued with Micron PCN #30995. Alliance Memory will be offering Micron’s 32M x 16 MT48LC32M16A2P-75: C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), and 64M x 8 MT48LC64M8A2P-75:C. In addition to the Micron part numbers Alliance Memory will also offer Alliance-marked 512M SDRAMs manufactured by Micron which will be 100% identical to the Micron parts.
Read the press release
Read the coverage in EE Times
NEW LOW-POWER, HIGH-SPEED MOBILE CMOS DDR SDRAMS WITH 256-MB, 512-MB, 1-GB, AND 2-GB DENSITIES
Alliance Memory has an entirely new product category: high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM). Designed to increase efficiency and extend battery life in compact portable devices, these new mobile DRAMs feature low power consumption from 1.7 V to 1.95 V and densities of 256-Mb, 512-Mb, 1-Gb, and 2-Gb. They come in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages.
To help designers squeeze more functionality into less space, our DDR SDRAMs have an auto temperature compensated self-refresh (ATCSR) feature that minimizes power consumption at lower ambient temperatures. A partial array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required. For optimal functionality in extreme environments, all devices are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges.
Click here for complete product details.
To request samples of the mobile DDR SDRAMs, please send an E-mail to sample@alliancememory.com.
ALLIANCE MEMORY AT ELECTRONICA 2014
At electronica 2014, Alliance Memory will be highlighting our latest offering of legacy IC solutions, including high-speed CMOS synchronous DRAMs (SDRAM) and mobile low-power double data rate (DDR), DDR2, and DDR3 SDRAMs featuring a wide range of densities, configurations, package options, and temperature ratings. We’ll be in Hall A5, Booth 224 at Messe Muenchen, November 11-14. Stop by and enter for a chance to win a wearable GoPro HERO camera.
NEW TEAM MEMBERS AT ALLIANCE MEMORY
We’re pleased to announce two new members of the worldwide Alliance Memory team.
In China, Winner Chen has joined us as field application engineer. A valuable new resource for designers using our legacy ICs, Winner is ready to help you solve technical issues such as configuring timing parameters on software and connection diagrams and PCB layouts on hardware. He’ll also be handling requests for IBIS models, information on ESD levels, and more.
“From my own experience in electronics design, I know that strong technical support from suppliers can be vital to the success of a project,” Winner says. “I’m looking forward to using what I’ve learned in my career to help our customers overcome the challenges in their applications and get their products to market faster, all while avoiding costly redesigns by using our legacy ICs.”
Winner is based in Shenzhen City, China, and can be reached at winner@alliancememory.com.
In Southeastern Europe, we’ve strengthened our sales force with the appointment of Ivailo Dimitrov as an Alliance Memory salesperson based in Bulgaria.
“There is high demand in Bulgaria for pin-for-pin compatible legacy memory devices that help manufacturers avoid the high cost of redesigns,” says Ivo. “I’m looking forward to meeting this need with Alliance Memory’s SRAMs and DRAMs, while helping the company continue its success in the country.”
Ivo can be reached at ivailo@alliancememory.com.
