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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

Press Releases

Alliance Memory Launches New LPSRAMs With Embedded Error-Correction Code; 1Mb and 4Mb Devices Boost Reliability Over Previous Generation Devices

KIRKLAND, Wash. — Jan. 25, 2023 — Alliance Memory today announced that the company has expanded its portfolio of low power asynchronous SRAM (LPSRAM) products with new 1Mb and 4Mb devices that feature embedded error-correction code (ECC). Compared to previous generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER) for more reliable operation in a wide range of consumer, industrial, communications, and medical applications.

The new LPSRAMs’ ECC feature provides 1-bit error correction per byte, which makes them particularly suitable for low power applications and battery backup nonvolatile memory applications. Data retention voltage for both devices is 1.5V with typical data retention current of 1µA for the 1Mb AS6CE1016A and 2µA for the 4Mb AS6CE4016B. The devices operate from a single power supply of 2.7V to 3.6V, and all inputs and outputs are fully TTL compatible.

With their enhanced performance, the new LPSRAMs are designed to meet the demands of a very wide range of applications, such as routers and switches in communications systems; programmable logic controllers in industrial automation systems; printers, gaming machines, musical instruments, and calculators; vending machines and ATMs; and elevator systems, control panels, and fire control systems.

Key device specifications and package options are shown in the table below.

Device Specification Table:

Part number Organization VCC range Access time Operating temperature Package
AS6CE4016B-45ZIN 256K x 16 2.7 – 3.6V 45 ns -40 ~ 85°C 44-pin 400 mil TSOP II
AS6CE4016B-45BIN 256K x 16 2.7 – 3.6V 45 ns -40 ~ 85°C 48-ball 6mm x 8mm FBGA
AS6CE1016A-45ZIN 64K x 16 2.7 – 3.6V 45 ns -40 ~ 85°C 44-pin 400 mil TSOP II

Samples and production quantities of the AS6CE1016A (1Mb) and AS6CE4016B (4Mb) are in stock and available now.

Alliance Memory Expands Multiple I/O Serial NOR Flash Memory Series With New 1.8V, 128Mb Solutions; Supporting Single, Dual, and Quad SPI Modes, Devices Offer Fast Read Performance to 133MHz and Operate Over a Single 1.65V to 1.95V Power Supply

KIRKLAND, Wash. — Dec.14, 2022 — Alliance Memory today announced that the company has expanded its AS25F series of multiple input/output serial NOR flash memory products with two new 1.8V, 128Mb devices. Offering support for single, dual, and quad SPI modes — with a QPI function — the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN combine fast read performance up to 133MHz with fast program and erase times of 0.3ms and 60ms typical, respectively.

Available in 8-pin SOP Wide Body (208mils) and 8L WSON (6x5mm) packages, the devices released today operate from a single 1.65V to 1.95V power supply, with active read current as low as 5mA and power consumption of < 3µA typical in Deep Power-Down mode. The solutions operate over an industrial temperature range of -40°C to +85°C and provide reliable, long-term performance with 100,000 program/erase cycles.

The AS25F1128MQ-70SIN and AS25F1128MQ-70WIN support uniform 4KB or 32KB or 64KB erase, offer an 8/16/32/64byte wrap-around burst read mode, and feature program/erase suspend and resume. Advanced security features include block protection and 4K-bit secured OTP to protect content from hostile access and inadvertent programming and erasing.

With their enhanced performance, the serial NOR flash memory products are designed to meet the demands of the computer, consumer, communications, IoT, and mobile markets. The devices are ideal for use in chipsets for PCs, servers, laptops, optical disc drives, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, mobile and wearable devices, digital cameras, and more.

Device Specification Table:

Part number AS25F1128MQ-70SIN AS25F1128MQ-70WIN
Density 128Mb
Bus width Serial Multi IO (x1/x2/x4)
VCC 1.65V to 1.95V
Speed 133MHz
Active read current max. 27mA
Power down current max. 20µA
Standby current max. 70µA
Temperature range -40°C to +85°C
Package 8-pin SOP (208mils) 8L WSON (6mm x 5mm)

Samples and production quantities of the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN are in stock and available now.

Alliance Memory Signs Rep Agreement With Eclipse Technologies to Support Customers in Wisconsin and Illinois

KIRKLAND, Wash. — Nov. 15, 2022 — Alliance Memory today announced that it has concluded an agreement with Eclipse Technologies Inc., a Milwaukee-based manufacturers’ representative for electronic components. Under the agreement, the company is now offering Alliance Memory’s entire lineup of SRAM, DRAM, embedded multi-media card (eMMC), and flash memory ICs to its customers throughout Wisconsin and Illinois.

Eclipse Technologies has been providing sales and engineering services for the industrial, medical, security, military, communications, computing, and automotive markets since 2010. For the company’s customers, Alliance Memory’s legacy and innovative technology ICs offer reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions across a broad spectrum of applications.

Through its partnership with Alliance Memory, Eclipse Technologies is offering its customers a full range of 3.3V and 5V fast asynchronous devices, synchronous SRAMs, PSRAMs, and low-power SRAMs; 5V parallel NOR and 1.8V and 3V SPI NAND flash ICs; and eMMC solutions. The company’s broad portfolio of high-speed CMOS SDRAMs includes MSDR, DDR, DDR2, DDR3, DDR4, LPDDR, LPDDR2, and LPDDR4 devices in a wide range of densities, configurations, and package options. In addition, Eclipse Technologies’ customers have access to several discontinued devices from Micron Technology, including DDR, DDR3, DDR3L, and SDR SDRAMs, as well as NOR flash ICs.

“Throughout Wisconsin and Illinois, Eclipse Technologies has earned a rock-solid reputation across a range of markets for providing an extremely broad technology portfolio and working very closely with customers to create new designs,” said Tom Gargan, director of sales for Canada, the Eastern U.S., and Brazil at Alliance Memory. “The company is well-known to our distributors and will be instrumental in providing our customers with exceptional service and greater access to our rapidly expanding product portfolio.”

“We focus on representing manufacturers that are technology leaders in their respective fields, which makes Alliance Memory a perfect addition to our product lineup,” said Ed Allen, president of Eclipse Technologies. “Over the last few years, the company’s portfolio of memory solutions has grown significantly to meet the market demand as manufacturers continue to EOL devices like SRAMs, SDRAMs, and even DDR3 SDRAMs. We couldn’t be more excited to bring these devices to Alliance Memory’s expanding customer base in Wisconsin and Illinois.”

Alliance Memory to Highlight Latest SRAM, DRAM, eMMC, and Flash Memory ICs at electronica 2022

KIRKLAND, Wash. — Nov. 7, 2022 — Alliance Memory today announced its technology lineup for electronica 2022, taking place Nov. 15-18 at the Trade Fair Center in Munich, Germany. Exhibiting in Hall C3, Stand 328, the company will be highlighting its latest SRAM, DRAM, eMMC, and flash memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets.

“It’s hard to believe it’s been four years since electronica was last held,” said David Bagby, president and CEO of Alliance Memory. “In that time, we’ve been extremely busy expanding our portfolio of memory solutions, whether it’s bolstering our lineup of DDR3 SDRAMs or adding new products like DDR4 SDRAMs and eMMCs. We can’t wait to meet up with our valued distributors and customers to show them what we’ve been up to and how we continue to be their trusted source for a growing range of must-have memory ICs.”

At electronica 2022, Alliance Memory will showcase eMMC solutions that integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single package for solid-state storage in consumer, industrial, and networking applications. The devices simplify designs for fast and easy system integration — speeding up product development and time to market — while saving space by eliminating the need for an external controller. The solutions are compliant with the JEDEC eMMC v5.1 industry standard and available with densities of 4GB and 8GB. A 16GB device will be released in December 2022.

Built on a finer process that results in a smaller chip than Alliance Memory’s original 4GB DDR4 SDRAMs, new “A” die versions will be on display at electronica 2022 that deliver improved performance — with lower power consumption down to +1.2V (±0.06V), faster clock speeds to 1600MHz, and higher transfer rates to 3200Mbps — at a lower cost. The devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity. In addition, the company is offering a 16GB Micron Technology DDR4 SDRAM for a wide range of applications.

Alliance Memory will highlight 3V and 1.8V multiple input/output serial NOR Flash memory products, which are designed to provide supply continuity to Micron Technology customers utilizing discontinued devices. The NOR Flash products combine fast read performance up to 133MHz with fast program and erase times. Available in 8-pin SOP wide body (208mils) and 8L WSON (6x5mm) packages with densities of 64Mb and 128Mb, the devices provide reliable, long-term performance with high program/erase cycles and long data retention.

In addition, Alliance Memory will highlight its lineup of DDR3 (1.5V) and DDR3L (1.35V) SDRAMs, which includes 512Mb, 1Gb, 2Gb, 4Gb, and 8Gb devices in x8/x16 bus widths, offered in 78-ball and 96-ball FBGA packages across commercial, industrial, and automotive temperature ranges. Offering a double data rate architecture for extremely fast transfer rates of up to 2133Mbps/pin and clock rates of 1066MHz, the devices provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, consumer, telecom, aerospace, and automotive applications.

electronica is the world’s leading trade fair for components, systems, and applications. More information on the event is available at http://www.electronica.de/.

Alliance Memory Rounds Out DDR4 SDRAM Lineup With Six New 4Gb “A” Die Devices and 16Gb Option From Micron Technology; Devices Offer Improved Performance With Lower +1.2V Operating Voltages and Higher Speeds to 1600MHz in 96-Ball and 78-Ball FBGA Packages

KIRKLAND, Wash. — Sept. 8, 2022 — Alliance Memory today announced that it has expanded its portfolio of CMOS DDR4 SDRAMs with new “A” die versions of the 4Gb AS4C256M16D4A and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. Built on a finer process that results in a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. In addition, Alliance Memory is continuing its partnership with Micron Technology and offering the company’s MT40A1G16KH-062E DDR4 SDRAM to provide customers with a 16Gb option.

To increase battery life in portable electronics such as smartphones and tablets, the Alliance Memory devices released today feature low operating voltages of +1.2V (±0.06V). The DDR4s are designed, qualified, and recommended for use in 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, PNDs, and more. Built on a new process technology, the new devices offer fast clock speeds up to 1600MHz and transfer rates up to 3200Mbps.

The AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.

With minimal die shrinks, Alliance Memory’s DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges, the new “A” die devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity.

The addition of Micron Technology’s MT40A1G16KH-062E to Alliance Memory’s offering of DDR4 SDRAMs provides the company’s customers with access to a 16Gb device for a wide range of applications. Operating from a +1.2V power supply over a commercial temperature range, the 1Gb x 16-bit device is built on an 8n-prefetch architecture for high data rates of 3200 MT/s. The MT40A1G16KH-062E supports read or write burst lengths of BC4 or BL8 on the fly.

Device Specification Table:

Part # Density Organization Package Speed Temp. range (°C)
AS4C256M16D4-83BCN 4Gb 256M x 16 96-ball FBGA 1200MHz 0 to +95
AS4C256M16D4-83BIN 4Gb 256M x 16 96-ball FBGA 1200MHz -40 to +95
AS4C256M16D4-75BCN 4Gb 256M x 16 96-ball FBGA 1333MHz 0 to +95
AS4C256M16D4-75BIN 4Gb 256M x 16 96-ball FBGA 1333MHz -40 to +95
AS4C256M16D4A-62BCN 4Gb 256M x 16 96-ball FBGA 1600MHz 0 to +95
AS4C256M16D4A-62BIN 4Gb 256M x 16 96-ball FBGA 1600MHz -40 to +95
AS4C256M16D4A-75BCN 4Gb 256M x 16 96-ball FBGA 1333MHz 0 to +95
AS4C256M16D4A-75BIN 4Gb 256M x 16 96-ball FBGA 1333MHz -40 to +95
AS4C512M8D4-83BCN 4Gb 512M x 8 78-ball FBGA 1200MHz 0 to +95
AS4C512M8D4-83BIN 4Gb 512M x 8 78-ball FBGA 1200MHz -40 to +95
AS4C512M8D4-75BCN 4Gb 512M x 8 78-ball FBGA 1333MHz 0 to +95
AS4C512M8D4-75BIN 4Gb 512M x 8 78-ball FBGA 1333MHz -40 to +95
AS4C512M8D4A-75BCN 4Gb 512M x 8 78-ball FBGA 1333MHz 0 to +95
AS4C512M8D4A-75BIN 4Gb 512M x 8 78-ball FBGA 1333MHz -40 to +95
AS4C512M16D4-75BCN 8Gb 512M x 16 96-ball FBGA 1333MHz 0 to +95
AS4C512M16D4-75BIN 8Gb 512M x 16 96-ball FBGA 1333MHz -40 to +95
AS4C1G8D4-75BCN 8Gb 1Gb x 8 78-ball FBGA 1333MHz 0 to +95
AS4C1G8D4-75BIN 8Gb 1Gb x 8 78-ball FBGA 1333MHz -40 to +95
MT40A1G16KH-062E 16Gb 1Gb x 16 96-ball FBGA 1600MHz 0 to +95

Samples and production quantities of the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN are available now, with lead times of eight to 12 weeks. Micron’s MT40A1G16KH-062E is available now from stock.

Visit Alliance Memory at electronica 2022

November 15–18, 2022
Trade Fair Center Messe München, Germany

Stop by and see us at Hall C3 Stand no. 328 on the exhibit floor or request an appointment to discuss your projects. Email Sue Macedo at sue@alliancememory.com to schedule a time.

Featured Products at electronica 2022

eMMCsAlliance eMMC

Compliant with the JEDEC eMMC v5.1 industry standard, Alliance Memory’s eMMC solutions integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single package for solid-state storage in consumer, industrial, and networking applications. The devices simplify designs for fast and easy system integration — speeding up product development and faster time to market — while saving space by eliminating the need for an external controller. The solutions are compliant with the JEDEC eMMC v5.1 industry standard and are available with densities of 4GB and 8GB. A 16GB device will be released in December 2022.

New DDR4 SDRAMsAlliance New DDR4 SDRAMs

Built on a finer process that results in a smaller chip than Alliance Memory’s original 4GB DDR4 SDRAMs, new “A” die versions deliver improved performance — with lower power consumption down to +1.2V (±0.06V), faster clock speeds to 1600MHz, and higher transfer rates to 3200Mbps — at a lower cost. The devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity. In addition, the company is offering a 16GB Micron Technology DDR SDRAM for a wide range of applications.

New 128Mb and 256Mb 1.8V Serial NOR FlashAlliance 1.8V to 3V SPI NAND Flash

Alliance Memory’s 3V and 1.8V multiple input/output serial NOR Flash memory products are designed to provide supply continuity to Micron Technology customers utilizing discontinued devices. The NOR Flash products combine fast read performance up to 133MHz with the fast program and erase times. Available in 8-pin SOP wide body (208mils) and 8L WSON (6x5mm) packages, the devices provide reliable, long-term performance with high program/erase cycles and long data retention.

DDR3 SDRAMsAlliance DDR3 SDRAMs

Alliance Memory’s lineup of DDR3 (1.5V) and DDR3L (1.35V) SDRAMs includes 512Mb, 1Gb, 2Gb, 4Gb, and 8Gb devices in x8/x16 bus widths, offered in 78-ball and 96-ball FBGA packages across commercial, industrial, and automotive temperature ranges. Offering a double data rate architecture for extremely fast transfer rates of up to 2133Mbps/pin and clock rates of 1066MHz, the devices provide reliable drop-in, pin-for- pin compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, consumer, telecom, aerospace, and automotive applications.