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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

Press Releases

Alliance Memory Rounds Out DDR4 SDRAM Lineup With Six New 4Gb “A” Die Devices and 16Gb Option From Micron Technology; Devices Offer Improved Performance With Lower +1.2V Operating Voltages and Higher Speeds to 1600MHz in 96-Ball and 78-Ball FBGA Packages

KIRKLAND, Wash. — Sept. 8, 2022 — Alliance Memory today announced that it has expanded its portfolio of CMOS DDR4 SDRAMs with new “A” die versions of the 4Gb AS4C256M16D4A and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. Built on a finer process that results in a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. In addition, Alliance Memory is continuing its partnership with Micron Technology and offering the company’s MT40A1G16KH-062E DDR4 SDRAM to provide customers with a 16Gb option.

To increase battery life in portable electronics such as smartphones and tablets, the Alliance Memory devices released today feature low operating voltages of +1.2V (±0.06V). The DDR4s are designed, qualified, and recommended for use in 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, PNDs, and more. Built on a new process technology, the new devices offer fast clock speeds up to 1600MHz and transfer rates up to 3200Mbps.

The AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.

With minimal die shrinks, Alliance Memory’s DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges, the new “A” die devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity.

The addition of Micron Technology’s MT40A1G16KH-062E to Alliance Memory’s offering of DDR4 SDRAMs provides the company’s customers with access to a 16Gb device for a wide range of applications. Operating from a +1.2V power supply over a commercial temperature range, the 1Gb x 16-bit device is built on an 8n-prefetch architecture for high data rates of 3200 MT/s. The MT40A1G16KH-062E supports read or write burst lengths of BC4 or BL8 on the fly.

Device Specification Table:

Part # Density Organization Package Speed Temp. range (°C)
AS4C256M16D4-83BCN 4Gb 256M x 16 96-ball FBGA 1200MHz 0 to +95
AS4C256M16D4-83BIN 4Gb 256M x 16 96-ball FBGA 1200MHz -40 to +95
AS4C256M16D4-75BCN 4Gb 256M x 16 96-ball FBGA 1333MHz 0 to +95
AS4C256M16D4-75BIN 4Gb 256M x 16 96-ball FBGA 1333MHz -40 to +95
AS4C256M16D4A-62BCN 4Gb 256M x 16 96-ball FBGA 1600MHz 0 to +95
AS4C256M16D4A-62BIN 4Gb 256M x 16 96-ball FBGA 1600MHz -40 to +95
AS4C256M16D4A-75BCN 4Gb 256M x 16 96-ball FBGA 1333MHz 0 to +95
AS4C256M16D4A-75BIN 4Gb 256M x 16 96-ball FBGA 1333MHz -40 to +95
AS4C512M8D4-83BCN 4Gb 512M x 8 78-ball FBGA 1200MHz 0 to +95
AS4C512M8D4-83BIN 4Gb 512M x 8 78-ball FBGA 1200MHz -40 to +95
AS4C512M8D4-75BCN 4Gb 512M x 8 78-ball FBGA 1333MHz 0 to +95
AS4C512M8D4-75BIN 4Gb 512M x 8 78-ball FBGA 1333MHz -40 to +95
AS4C512M8D4A-75BCN 4Gb 512M x 8 78-ball FBGA 1333MHz 0 to +95
AS4C512M8D4A-75BIN 4Gb 512M x 8 78-ball FBGA 1333MHz -40 to +95
AS4C512M16D4-75BCN 8Gb 512M x 16 96-ball FBGA 1333MHz 0 to +95
AS4C512M16D4-75BIN 8Gb 512M x 16 96-ball FBGA 1333MHz -40 to +95
AS4C1G8D4-75BCN 8Gb 1Gb x 8 78-ball FBGA 1333MHz 0 to +95
AS4C1G8D4-75BIN 8Gb 1Gb x 8 78-ball FBGA 1333MHz -40 to +95
MT40A1G16KH-062E 16Gb 1Gb x 16 96-ball FBGA 1600MHz 0 to +95

Samples and production quantities of the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN are available now, with lead times of eight to 12 weeks. Micron’s MT40A1G16KH-062E is available now from stock.

Visit Alliance Memory at electronica 2022

November 15–18, 2022
Trade Fair Center Messe München, Germany

Stop by and see us at Hall C3 Stand no. 328 on the exhibit floor or request an appointment to discuss your projects. Email Sue Macedo at sue@alliancememory.com to schedule a time.

Alliance Memory to Highlight Latest SRAM, DRAM, Flash, and Storage Memory ICs at Embedded World 2022

KIRKLAND, Wash. — May 5, 2022 — Alliance Memory today announced its technology lineup for Embedded World 2022, taking place June 21-23 in Nuremberg, Germany. Exhibiting in Hall 1, Stand 639, the company will highlight its latest SRAM, DRAM, flash, and storage memory ICs for embedded platforms.

“It’s been more than two years since Alliance Memory has exhibited at an in-person trade show,” said David Bagby, president and CEO of Alliance Memory. “During that time, we’ve been proudly supporting the European market with a reliable source of legacy memory chips that were otherwise in short supply, especially our Micron Technology flash devices, which we’ve been able to keep in stock due to our special relationship with the company. But the long wait is finally over, and we’re excited to meet up with our valued distributors and customers again at Embedded World 2022. We can’t wait to see everyone in Nuremberg.”

On display at Embedded World 2022, Alliance Memory’s latest offering for the embedded market includes 4GB and 8GB industrial grade embedded multi-media card (eMMC) solutions for solid-state storage in consumer, industrial, and networking applications. The devices each integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5mm by 13mm 153-ball FBGA package. Compliant with the JEDEC eMMC v5.1 industry standard, the eMMCs support features such as boot operation, replay protected memory block (RPMB), device health report, field firmware updates, power-off notification, enhanced strobe features for faster and more reliable operation, write leveling, high-priority interrupt (HPI), secure trim/erase, and high-speed HS200 and HS400 modes.

Alliance Memory will also be highlighting high-speed CMOS mobile low-power SDRAMs featuring on-chip ECC. With low-voltage operation of 1.1 V and 0.6 V, respectively, the LPDDR4 and LPDDR4x devices increase battery life in portable electronics for the consumer, commercial, and industrial markets, including tablets, wearables, smartphones, smart speakers, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and high-resolution video in embedded applications, the low-power SDRAMs deliver fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications — including infotainment and ADAS systems — the AEC-Q100 qualified devices operate over a temperature range of -40°C to +105°C.

To meet the growing demand for serial peripheral interface (SPI) NAND flash memory products in the automotive, industrial, communications, and consumer electronic markets, Alliance Memory will be exhibiting its AS5F series of 1.8V to 3V devices with densities from 1Gb to 8Gb and high-speed clock frequencies up to 120MHz. Offering reliable, long-term performance, the SPI NAND flash products feature more than 60,000 program/erase cycles, offer 10-year data retention, and support standard, dual, and quad SPI operation. With their enhanced performance, the devices meet the requirements for multimedia data storage applications and AI implementation.

In addition, Alliance Memory will showcase its AS25F line of 3V multiple input/output serial NOR flash memory products, which are designed to provide supply continuity for Micron Technology customers utilizing discontinued N25Q series devices. The AS25F series combines fast read performance up to 104MHz with fast program and erase times of 0.3ms and 40ms typical, respectively. Available in 8-pin SOP Wide Body (209mils) and 8L WSON (6x5mm) packages, the devices provide reliable, long-term performance with 100,000 program/erase cycles and 10-year data retention.

For free admission to Embedded World 2022, register at https://www.messe-ticket.de/Nuernberg/embeddedworld/Register using personalized voucher code ew22466864.

Visit Alliance Memory at Embedded World 2022

21 – 23 June 2022
Nuremberg, Germany

Stop by and see us at Hall 1, Stand 639 on the exhibit floor or request an appointment to discuss your projects. Email Sue Macedo at sue@alliancememory.com to schedule a time.

For free admission, register at https://www.messe-ticket.de/Nuernberg/embeddedworld/Register using personalized voucher code ew22466864.

New Alliance Memory Products on Display at Embedded World 2022

Industrial-Grade 4GB and 8GB eMMCsAlliance eMMC

For solid-state storage in consumer, industrial, and networking applications, Alliance Memory’s 4GB and 8GB embedded multi-media card(eMMC) solutions each integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package. Compliant with the JEDEC eMMC v5.1 industry standard, the eMMCs support a wide range of features, from boot operation to high-speed HS200 and HS400 modes.

Link to product listing
Link to product photos

High-Speed CMOS Mobile Low-Power SDRAMs With On-Chip ECC
Alliance LPDDR4/X

With low-voltage operation of 1.1V and 0.6V, respectively, Alliance Memory’s LPDDR4 and LPDDR4x devices increase battery life in portable electronics and IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and high-resolution video in embedded applications, the low-power SDRAMs deliver fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications, the AEC-Q100 qualified devices operate over a temperature range of -40°C to +105°C.

Link to product listing
Link to product photos (LPDDR4)
Link to product photos (LPDDR4x)

1.8V to 3V SPI NAND Flash1.8V to 3V SPI NAND Flash

Alliance Memory’s AS5F series of 1.8V to 3V SPI NAND flash products offers densities from 1Gb to 8Gb and high-speed clock frequencies up to 120MHz for automotive, industrial, communications, and consumer electronic markets. Providing reliable, long-term performance, the devices feature more than 60,000 program/erase cycles, offer 10-year data retention, and support standard, dual, and quad SPI operation. With their enhanced performance, the flash products meet the requirements for multimedia data storage applications and AI implementation.

Link to product listing
Link to product photos

3V Multiple I/O Serial NOR Flash3V Multiple I/O Serial NOR Flash

Alliance Memory’s AS25F line of 3V multiple input/output serial NOR flash memory products are designed to provide supply continuity for Micron Technology customers utilizing discontinued N25Q series devices. The AS25F series combines fast read performance up to 104MHz with fast program and erase times of 0.3ms and 40ms typical, respectively. Available in 8-pin SOP Wide Body (209mils) and 8L WSON (6x5mm) packages, the devices provide reliable, long-term performance with 100,000 program/erase cycles and 10-year data retention.

Link to product listing
Link to product photos

Alliance Memory 4GB and 8GB eMMC Solutions Simplify Designs and Save Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1, Industrial-Grade Devices Combine NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

KIRKLAND, Wash. — Jan. 27, 2022 — Alliance Memory today introduced two new industrial-grade embedded multi-media card (eMMC) solutions. For solid-state storage in consumer, industrial, and networking applications, the 4GB ASFC4G31M-51BIN and 8GB ASFC8G31M-51BIN each integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package.

The devices released today are compliant with the JEDEC eMMC v5.1 industry standard, supporting features such as boot operation; replay protected memory block (RPMB); device health report; field firmware updates; power off notification; enhanced strobe features for faster and more reliable operation; write leveling; high-priority interrupt (HPI); secure trim/erase; and high-speed HS200 and HS400 modes. The ASFC4G31M-51BIN and ASFC8G31M-51BIN are also backwards-compatible with eMMC v4.5 and v5.0.

The eMMCs will be used in products such as smart watches, tablets, digital TVs, set-top boxes, VR and AR headsets, digital cameras, infotainment, CCTV, surveillance, automation, point-of-sale systems and emerging embedded applications. For designers, the ASFC4G31M-51BIN and ASFC8G31M-51BIN simplify designs for fast and easy system integration in these products — speeding up product development and time to market — while saving space by eliminating the need for an external controller. In addition, the devices’ FTL software provides high reliability and stable performance with wear levelling and bad block management.

The ASFC4G31M-51BIN and ASFC8G31M-51BIN operate over an industrial temperature range of -40°C to +85°C and offer programmable bus widths of x1, x4, and x8. The devices’ NAND memory with internal LDO can be powered with a single 3V supply voltage, while the controller can be powered by 1.8V or 3V dual supply voltages.

Samples and production quantities of the eMMCs will be available in Q1 2022, with lead times of 12 weeks.

Alliance Memory Signs Rep Agreement With ESI to Support Expanding Customer Base in Southeast and Central U.S.

KIRKLAND, Wash. — Jan. 20, 2022 — Alliance Memory today announced that it has concluded an agreement with Electronic Salesmasters Inc. (ESI), a Beachwood, Ohio-based manufacturers’ representative for electronic components. Under the agreement, the company is now offering Alliance Memory’s entire lineup of SRAM, DRAM, and flash ICs to its customers throughout the southeast and central United States, including Michigan, Indiana, Western Pennsylvania, Ohio, Kentucky, Tennessee, Alabama, Georgia, North Carolina, and South Carolina, with its HHP Associates division serving Florida.

ESI has been providing sales and engineering services to the electronics industry since 1972. For the company’s customers, Alliance Memory’s legacy ICs offer reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions across a broad spectrum of applications, including industrial, appliances, communications, transportation, military, instrumentation, datacom, medical, automotive, and more.

Through its partnership with Alliance Memory, ESI is offering its customers a full range of 3.3V and 5V fast asynchronous devices, synchronous SRAMs, PSRAMs, and low-power SRAMs; 5V parallel NOR and 1.8V and 3V SPI NAND flash ICs; and embedded multimedia card (eMMC) solutions. The company’s broad portfolio of high-speed CMOS SDRAMs includes MSDR, DDR, DDR2, DDR3, DDR4, LPDDR, LPDDR2, and LPDDR4 devices in a wide range of densities, configurations, and package options. In addition, ESI customers have access to several discontinued devices from Micron Technology, including DDR, DDR3, DDR3L, and SDR SDRAMs, as well as NOR flash ICs.

“ESI has been serving a wide range of markets in the electronics industry for five decades, during which time the company has earned an international reputation for its extensive engineering knowledge and synergistic product lines,” said Tom Gargan, director of sales for Canada, the Eastern U.S., and Brazil at Alliance Memory. “For states in the southeast and central U.S. where we currently only offer remote coverage, this partnership will provide our customers with greater access to our legacy ICs while offering them a team of knowledgeable sales engineers for outstanding service.”

“Over the last few years, Alliance Memory’s portfolio of memory solutions has grown rapidly. Furthermore, in a time when IC shortages are the norm, the company has managed to keep its lead times short,” said Spencer Abramson, president of ESI. “Not surprisingly, these two factors have led to tremendous growth for the company. We couldn’t be more excited to add Alliance Memory’s long-term memory solutions to our line card and support the company’s expanding customer base.”