• Skip to primary navigation
  • Skip to content
  • Skip to primary sidebar
  • Skip to footer
Shop Memory, Buy Now Product Listing Download Cross Reference Guide
  • Contact Us
  • About
  • Support
    • Technical Support And Product Resources
    • Product Longevity Statement
    • Terms and Conditions
    • Quality Policy
    • Packaging Quantities
    • Packing Procedures
    • SECURITY
    • End of Life Memory Products
  • Where to Buy-Distributors
    • North American Distributors
    • Latin America & SE Asia Distributors
    • Europe, Middle East, Africa Distributors
    • Pacific Rim Distributors
  • Solutions
    • Cypress CY62256 Replacement
    • Micron 8G DDR3L SDRAM
    • Micron NOR Flash
    • Processor Compatibility Options
      • Analog Devices
      • Atmel/Microchip Technology
      • GOWIN
      • Intel Corporation
      • Lattice Semiconductor
      • Marvell / Cavium
      • NXP Semiconductors
      • Rockchip SoCs
      • STMicroelectronics
      • Texas Instruments
      • Xilinx, Inc.
  • Applications
    • Automotive
    • Mobile and Embedded
    • Medical
  • Products
    • Full Product Catalog
    • DRAMs
      • Micron DRAMs
      • Synchronous DRAMs
      • DDR SDRAM
      • DDR2 SDRAM
      • DDR3 SDRAM
      • DDR4 SDRAM
      • LPDDR Mobile DDR
      • LPDDR2 Mobile DDR 2
      • LPDDR4/X Mobile DDR 4/X
      • LPSDR SDRAM – Mobile SDR
    • SRAMs
      • Fast Asynchronous SRAMs
      • Psuedo SRAMs (PSRAM)
      • Low Power Asynchronous SRAM
      • Synchronous SRAMs
      • ZMD Low Power Asynchronous SRAMs
    • FLASH & Storage
      • Parallel NOR Flash
        • Parallel NOR Flash (5V)
        • Micron M29F NOR Flash (5V)
        • Micron J3/P30/P33 Parallel NOR
      • Serial NOR Flash
        • Micron M45PE Serial NOR Flash
        • Micron N25Q Serial NOR Flash
        • AS25F Serial NOR Flash
      • Serial NAND Flash
      • Parallel NAND Flash
      • eMMC
Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

March 10, 2014

Alliance Memory Introduces New High-Speed CMOS Double Data Rate 2 (DDR2) Synchronous DRAMs With 512-Mb and 1-Gb Densities in 60-Ball (x8) and 84-Ball (x16) FBGA Packages

SAN CARLOS, Calif. — Mar. 10, 2014 — Alliance Memory today introduced a new line of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) with densities of 512 Mb (AS4C32M16D2) and 1 Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages.

The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in automotive, industrial, consumer, and networking products requiring high memory bandwidth. The AS4C32M16D2 is internally configured as four banks of 8M words x 16 bits. The AS4C64M16D2 and AS4C128M8D2 are internally configured as eight banks of 8M x 16 bits and 16M x 8 bits, respectively. The DDR2 SDRAMs offer a synchronous interface, operate from a single + 1.8-V (± 0.1 V) power supply, and are lead (Pb)- and halogen-free.

The AS4C32M16D2, AS4C64M16D2, and AS4C128M8D2 feature a fast clock rate of 400 MHz and a data rate of 800 Mbps/pin, and they are offered in commercial (0 °C to +85 °C), industrial (-40 °C to + 95 °C), and automotive (-40 °C to +105 °C) temperature ranges. The DDR2 SDRAMs provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Part Number Density Configuration Package Temp. Range
AS4C32M16D2-25BCN 512 Mb 32M x 16 bit 84-ball FBGA 0° to +85 °C
AS4C32M16D2-25BIN 512 Mb 32M x 16 bit 84-ball FBGA -40 °C to +95 °C
AS4C32M16D2-25BAN 512 Mb 32M x 16 bit 84-ball FBGA -40 °C to
+105 °C
AS4C64M16D2-25BCN 1G 64M x 16 bit 84-ball FBGA 0° to +85 °C
AS4C64M16D2-25BIN 1G 64M x 16 bit 84-ball FBGA -40 °C to +95 °C
AS4C64M16D2-25BAN 1G 64M x 16 bit 84-ball FBGA -40 °C to
+105 °C
AS4C128M8D2-25BCN 1G 128M x 8 bit 60-ball FBGA 0° to +85 °C
AS4C128M8D2-25BIN 1G 128M x 8 bit 60-ball FBGA -40 °C to +95 °C
AS4C128M8D2-25BAN 1G 128M x 8 bit 60-ball FBGA -40 °C to
+105 °C

Samples of the new DDR2 SDRAMs are available now, with lead times of six to eight weeks for production quantities. Pricing for U.S. delivery starts at $1.30 per piece.

Primary Sidebar

Press Releases

Alliance Memory Introduces New 4Mb and 16Mb 3V Multiple I/O Serial NOR Flash Memory Solutions; Offered in SOP8 Narrow Body Package, Devices Deliver Enhanced Performance With Fast Read, Program, and Erase Times

November 14, 2023

Alliance Memory Appoints Kim Newman as Global Account Manager for Jabil

October 2, 2023

eMMC Solutions: New 32GB-128GB with TLC NAND

September 21, 2023

Alliance Memory Introduces New Line of 1.8V and 3.3V SLC Parallel NAND Flash Memory Solutions; Compliant With the ONFI 1.0 Specification, 1Gb to 8Gb AS9F Series Devices Deliver Fast Block Erase Times Down to 3 ms

July 27, 2023

Alliance Memory 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs Combine Low-Voltage Operation of 0.6V With Fast Clock Speeds to 1.86GHz; Solutions Offer ~50% Reduction in Power Consumption Compared to LPDDR4 Devices, Increasing Power Efficiency and Performance

July 18, 2023

Alliance Memory Signs Rep Agreement With Electra Sales to Support Customers in Upstate New York

July 13, 2023

16GB eMMC Solutions: Space-Saving

July 6, 2023

Alliance Memory Further Bolsters Presence in Asia With Appointment of Kelly Chien as Country Manager for Taiwan

June 26, 2023

Alliance Memory Appoints Tanya Frew as Business Development Manager, Europe

June 20, 2023

Alliance Memory Bolsters Presence in Asia with Appointment of Linus Park as Country Manager for Korea

May 18, 2023

Alliance Memory Expands Lineup of CMOS DDR4 SDRAMs With New 16Gb Device; 1Gb x 16-bit DDR4 SDRAM Combines Low 1.2V Power Consumption With Fast Clock Speeds to 1600MHz and Transfer Rates to 3200 MT/s in 96-Ball FBGA Package

February 14, 2023

Alliance Memory Launches New LPSRAMs With Embedded Error-Correction Code; 1Mb and 4Mb Devices Boost Reliability Over Previous Generation Devices

January 25, 2023

More Posts from this Category

PR Contacts

Company Contact

Sue Macedo
sue@alliancememory.com

Agency Contact

Bob Decker
bob.decker@redpinesgroup.com

Footer

US Headquarters

Alliance Memory, Inc
12815 NE 124th St, Suite D
Kirkland, WA 98034
Tel: +1 (425) 898-4456
Fax +1 (425) 896-8628




© 2023 Alliance Memory

Reference:

  • Contact Us
  • Newsletters
  • New Product Announcements
  • Press Releases
  • Testimonials
  • Terms and Conditions
  • Privacy Policy

Sign up for our Newsletter:

Front Page Newsletter Sign Up

  • This field is for validation purposes and should be left unchanged.
Visit Us On LinkedinVisit Us On YoutubeVisit Us On TwitterVisit Us On Facebook