Alliance Memory

New 512Mb (x8 and x16) DDR3 and DDR3L SDRAMs

Teresa — Wed, 04 Oct 2017 17:59:51 +0000

The News: Alliance Memory announces that it has expanded the industry’s widest offering of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs with new 512Mb, x8 and x16 devices in the 78-ball and 96-ball FBGA packages, respectively. Part Numbers: AS4C32M16D3-12BCN, AS4C32M16D3-12BIN, AS4C32M16D3L-12BCN, AS4C32M16D3L-12BIN, AS4C64M8D3-12BCN, AS4C64M8D3-12BIN, AS4C64M8D3L-12BCN, AS4C64M8D3L-12BIN Availability: Samples of the new 512Mb DDR3 and DDR3L SDRAMs are available now. Production quantities will be available in October 2017, with lead times to eight weeks. Key Specifications and Benefits: 64Mb x8 and 32Mb x16 configurations

Available in 78-ball and 96-ball FBGA packages
Extremely fast transfer rates of 1600Mbps and clock rates of 800MHz
Single power supply:
- DDR3 SDRAMs: +1.5V (±0.075V)
- DDR3L SDRAMs: +1.35V, with backward compatibility to 1.5V
- JEDEC-compliant
Available in commercial-extended (0℃ to +95℃) and industrial (-40℃ to +95℃) temperature ranges
Support sequential and interleave burst types with read or write burst lengths of 4 or 8
Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
RoHS-compliant, lead (Pb)- and halogen-free

Target Applications:

Graphics cards
DIMM modules
Embedded systems
Desktop and notebook computers
Industrial metering applications
Consumer electronics
Wireless base stations

New 64Mb Low-Power SRAM

Nathan — Thu, 30 Nov 2017 21:06:34 +0000

The News: To meet the demand for low-power SRAMs with higher densities, Alliance Memory introduces a new 64Mb (4M x 16 bit) device in 48‑pin, 12mm by 20mm TSOP-I and 48-ball TFBGA packages. Part Numbers: AS6C6416-55TIN, AS6C6416-55BIN Key Specifications and Benefits:

4M x 16 bit configuration
Available in 48‑pin, 12mm by 20mm TSOP-I and 48-ball TFBGA packages
Operates from a single power supply of 2.7V to 3.6V
Fast access time of 55ns
Low power consumption:
- Typical operating current of 12mA
- Standby current of 12µA
Standby current is stable within the operating temperature range of -40°C to +85°C
RoHS-compliant
Offers fully static operation and tri-state output
Features a data retention voltage of 1.2V minimum
All inputs and outputs are fully TTL-compatible

Target Applications:

Low-power portable electronics
Industrial automation, telecom, medical, and broadcast equipment
Battery back-up non-volatile memory

The Context:The AS6C6416-55 provides high reliability and power savings for low-power applications and is one of a very few 64Mb SRAMs available on the market. It’s the latest in Alliance Memory’s full range of low-power SRAM products, which include devices with densities of 64K, 256K, 1M, 2M, 4M, 8M, 16M, 32M, and now 64M. Availability: Samples of the new 512Mb DDR3 and DDR3L SDRAMs are available now. Production quantities will be available in October 2017, with lead times to eight weeks.

New 256Mb High-Speed CMOS SDRAMs

Nathan — Mon, 22 Jan 2018 18:47:42 +0000

The News: Alliance Memory extends its offering of 256Mb high-speed CMOS SDRAMs with new x8 and x4 devices in the 54-pin 400-mil plastic TSOP II package. Part Numbers: AS4C32M8SA-7TCN, AS4C32M8SA-7TCNTR, AS4C32M8SA-6TIN, AS4C32M8SA-6TINTR, AS4C64M4SA-7TCN, AS4C64M4SA-7TCNTR, AS4C64M4SA-6TIN, and AS4C64M4SA-6TINTR Key Specifications and Benefits:

Feature 54-pin 400-mil plastic TSOP II package
32M x 8 bit (AS4C32M8SA) and 64M x 4 bit (AS4C64M4SA) configurations
Synchronous interface
Operate from a single +3.3V (± 0.3V) power supply
Lead (Pb)- and halogen-free
Fast access time from clock down to 5.4 ns
Clock rates to 166 MHz
Available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges
Programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option
Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
A programmable mode register allows the system to choose the most suitable modes to maximize performance
Available in tape-and-reel package (part numbers ending in –TR)

Target Applications:

Image storage and video buffering
Consumer and industrial products
Wearables

The Context: Alliance Memory is a market leader in SDRAMs, offering the broadest product line-up of any vendor, with densities from 16Mb to 512Mb in a wide range of configurations and packages. The 256Mb AS4C32M8SA and AS4C64M4SA complement the company’s existing x16 and x32 parts, and provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions used for image storage and video buffering in consumer and industrial products. Availability: Samples and production quantities of the new SDRAMs are available now, with lead times of four to eight weeks for large orders.

Low-Power SDRAMs in a Wide Range of Densities and Package Options

Nathan — Tue, 15 May 2018 16:41:16 +0000

The News: Alliance Memory’s SDRAM portfolio now features a wide variety of components that combine low power consumption with power-saving features to extend battery life in mobile devices. Part Numbers: Please see table below. Availability:Samples and production quantities of Alliance Memory’s SDR (LPSDR), double data rate (LPDDR), and DDR2 (LPDDR2) devices are available now, with lead times of four to six weeks. Key Specifications and Benefits:

SDR (LPSDR) SDRAMs
- Power consumption of 1.8V
- Densities of 128Mb, 256Mb, and 512Mb
- x16 and x32 organizations
- 54-ball and 90-ball FBGA packages
DDR (LPDDR) SDRAMs
- Power consumption from 1.7V to 1.95V
- Densities of 256Mb, 512Mb, 1Gb, and 2Gb
- x16 and x32 organizations
- 60-ball and 90-ball FBGA packages
DDR2 (LPDDR2) SDRAMs
- Enable ultra-slim designs
- Power consumption of 1.2V/1.8V
- Densities of 1Gb, 2Gb, and 4Gb
- x16 and x32 organizations
- 134-ball FBGA package
Power-saving features:
- Auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures
- Partial-array self-refresh (PASR) feature reduces power by only refreshing critical data
- Deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required

Target Applications:

Internet of Things and consumer, industrial, and medical mobile devices

The Context:With the Internet of Things and proliferation of mobile devices in the consumer, industrial, and medical spaces, Alliance Memory has made a commitment over the last few years to solidify its offering of low-power ICs. It began with the introduction of the company’s LPSDR SDRAMs in 2014, followed by its LPDDR devices in 2016, and LPDDR2 SDRAMs in 2017. Now Alliance Memory offers a complete low-power portfolio in a wide range of densities and package options to meet the high demand for these parts. Product Datasheets:

Type	Part number	Density
SDR	AS4C8M16MSA-6BIN AS4C4M32MSA-6BIN	128Mb
	AS4C16M16MSA-6BIN AS4C8M32MSA-6BIN	256Mb
	AS4C32M16MSA-6BIN AS4C16M32MSA-6BIN	512Mb
DDR	AS4C16M16MD1-6BCN	256Mb
	AS4C32M16MD1A-5BCN AS4C16M32MD1-5BCN AS4C16M32MD1-5BIN	512Mb
	AS4C64M16MD1A-5BIN AS4C32M32MD1A-5BIN	1Gb
	AS4C64M32MD1-5BCN AS4C64M32MD1-5BIN	2Gb
DDR2	AS4C64M16MD2A-25BIN AS4C32M32MD2A-25BIN	1Gb
	AS4C128M16MD2A-25BIN AS4C64M32MD2A-25BIN	2Gb
	AS4C128M32MD2A-25BIN AS4C128M32MD2A-18BIN	4Gb

New 8Mb to 128Mb High-Speed CMOS PSRAMs

Nathan — Fri, 26 Oct 2018 13:03:02 +0000

The News: Alliance Memory introduces a new family of high-speed CMOS pseudo SRAMs (PSRAMs) with densities from 8Mb to 128Mb in 6.0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm by 4.0 mm by 1.0 mm 49-ball FPBGA packages. Part Numbers: AS1C512K16PL-70BIN, AS1C512K16P-70BIN, AS1C1M16PL-70BIN, AS1C1M16P-70BIN, AS1C2M16P-70BIN, AS1C4M16PL-70BIN, and AS1C8M16PL-70BIN Key Specifications and Benefits:

Wide range of densities available:
- 8Mb, 16MB, and 32MB devices featuring interfaces compatible with asynchronous type SRAM
- 64Mb and 128Mb CellularRAM PSRAMs featuring a multiplexed address/data bus for greater bandwidth
Offered in 0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm by 4.0 mm by 1.0 mm 49-ball FPBGA packages
Support asynchronous and burst operation
Feature read or write burst lengths of 4, 8, 16, or 32 words, or continuous burst
Available in industrial temperature ranges of -30 °C to +85 °C and -40 °C to +85 °C
Fast access speeds of 70s
Operate from a single power supply of 1.7V to 1.95V or 2.6V to 3.3V
Power-saving features:
- Auto temperature-compensated self-refresh (ATCSR)
- Partial array self-refresh (PASR)
- Deep power down (DPD) mode

Target Applications:

Wireless, automotive, networking, and industrial applications

The Context:Alliance Memory’s high-speed CMOS PSRAMs combine the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions. Featuring high-density DRAM cores with SRAM interfaces and on-chip refresh circuits for refresh-free operation, the devices provide the high bandwidth and the low power necessary to replace SRAMs in portable electronics such as mobile phones and PDAs, or to serve as companion chips to burst NOR Flash applications. Availability:Samples and production quantities of the new PSRAMs will be available in November 2018, with lead times of eight weeks.

New x8, x16, and x32 512Mb Monolithic CMOS SDRAMs

Nathan — Wed, 21 Nov 2018 15:36:58 +0000

The News: Alliance Memory extends its offering of 512Mb high-speed CMOS SDRAMs with new monolithic 64M x 8 (AS4C64M8SC-7TIN) and 32M x 16 (AS4C32M16SC-7TIN) devices in the 54-pin 400-mil plastic package, and a 16M x 32 (AS4C16M32SC-7TIN) device in the 86-pin TSOP II package. Part Numbers: AS4C64M8SC-7TIN, AS4C32M16SC-7TIN, and AS4C16M32SC-7TIN Key Specifications and Benefits:

64M x 8, 32M x 16, and 16M x 32 configurations
Offered in 54-pin and 86-pin TSOP II packages
LVTTL interface
Single +3.3-V (± 0.3 V) power supply
Power down mode lowers power consumption
Data mask for read/write control
Fast clock rates to 133 MHz
Available in an industrial temperature range of -40 °C to +85 °C
Fully synchronous with the positive clock edge
Support sequential and interleave burst types with read or write burst lengths of 1, 2, 4, 8, or full page
Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
Programmable mode register allows the system to choose the most suitable modes to maximize performance
Lead (Pb)- and halogen-free

Target Applications:

General-purpose computing, medical, industrial, point-of-sale, automotive, and telecom applications requiring high memory bandwidth

The Context: Fully synchronous with the positive clock edge, the AS4C64M8SC-7TIN, AS4C32M16SC-7TIN, and AS4C16M32SC-7TIN deliver faster performance than DRAMs in applications requiring high memory bandwidth. With minimal die shrinks, they can provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions, eliminating the need for costly redesigns and part requalification. Availability: Samples and production quantities of the new SDRAMs are available now, with lead times of eight weeks for large orders.

CYPRESS CY62256 = ALLIANCE MEMORY AS6C62256

Nathan — Wed, 06 Feb 2019 21:51:02 +0000

Jump start your CY62256 replacement design-in process with side-by-side overviews of the specifications for the Cypress Semiconductor CY62256 and the direct replacement AS6C62256 family from Alliance Memory. Get started here.

Complete Automotive Temperature DRAM Portfolio, Now With Reduced Lead Times

Nathan — Tue, 15 Jan 2019 10:00:24 +0000

The News: Alliance Memory has greatly reduced lead times for its DRAMs with -40°C to +105°C automotive temperature ratings. The company offers a complete lineup of automotive temperature CMOS SDRAMs, including double data rate (DDR), DDR2, and DDR3 devices. A full list of Alliance Memory’s automotive solutions is available here. Key Specifications and Benefits:

AEC-Q100 compliant
-40°C to +105°C automotive temperature ratings
Offering includes:
- SDRAMs with densities of 64 Mb, 128 Mb, and 256 Mb
- DDR1 SDRAMs featuring densities of 128 Mb, 256 Mb, and 512 Mb
- DDR2 SDRAMs in densities of 256 Mb, 512 Mb, and 1 Gb
- 1-Gb, 2-Gb, and 4-Gb DDR3 SDRAMs that operate over 1.35-V and 1.5-V power supplies

Target Applications:

Advanced Driving Assistance Systems (ADAS); powertrain; automotive active safety and autonomous driving; connectivity and in-vehicle-networking (IVN); carputers (customized PCs in cars); telematics; and infotainment systems

The Context: Alliance Memory’s lineup of automotive temperature CMOS SDRAMs includes DDR, DDR2, and DDR3 devices in a wide range of densities and package options. To provide designers with a quick reference guide, a complete list of the company’s automotive memory solutions — complete with key specifications and links to datasheets — is available here. In response to customer demand, Alliance Memory now also holds many of its automotive temperature range DRAMs in finished goods stock, and in addition can promise lead times of just six weeks for its most popular automotive memory solutions. Availability: Samples and production quantities of the automotive DRAMs are available now, with lead times from stock to six weeks.

Now Available Direct From Alliance Memory . . .

Nathan — Thu, 07 Feb 2019 16:30:41 +0000

In keeping with our commitment to supporting the legacy SDRAM needs of our customers, Alliance Memory is now offering several end-of-life 8G DDR3L SDRAMs for which Micron Technology announced a last-time buy date of Jan. 13, 2019. For three of the devices, we’re also offering versions with Alliance Memory part numbers that use the same genuine single-die Micron silicon as the Micron-numbered parts. Learn more here.

Efficiency and Performance: Low power SDRAMs for mobile and embedded systems

Teresa — Thu, 28 Mar 2019 20:02:01 +0000

Alliance Memory's SDRAM portfolio features a wide variety of components that combine low power consumption with power-saving features to extend battery life in mobile devices. With the Internet of Things and proliferation of mobile devices in the consumer, industrial, and medical spaces, Alliance Memory has made a commitment over the last few years to solidify its offering of low-power ICs. It began with the introduction of the company’s LPSDR SDRAMs in 2014, followed by its LPDDR devices in 2016, and LPDDR2 SDRAMs in 2017. Now Alliance Memory offers a complete low-power portfolio in a wide range of densities and package options to meet the high demand for these parts. AS4C64M16MD2A-25BIN AS4C32M32MD2A-25BIN

Type	Density	Part Number	Stock
SDR	128Mb	AS4C8M16MSA-6BIN AS4C4M32MSA-6BIN	Buy Buy
	256Mb	AS4C16M16MSA-6BIN AS4C8M32MSA-6BIN	Buy Buy
	512Mb	AS4C32M16MSA-6BIN AS4C16M32MSA-6BIN	Buy Buy
DDR	256Mb	AS4C16M16MD1-6BCN	Buy
	512Mb	AS4C32M16MD1A-5BCN AS4C16M32MD1-5BCN AS4C16M32MD1-5BIN	Buy Buy Buy
	1Gb	AS4C64M16MD1A-5BIN AS4C32M32MD1A-5BIN	Buy Buy
	2Gb	AS4C64M32MD1-5BCN AS4C64M32MD1-5BIN	Buy Buy
DDR2	256Mb	AS4C8M32MD2A-25B2CN AS4C8M32MD2A-25BCN	Buy Buy
	2Gb	AS4C128M16MD2A-25BIN AS4C64M32MD2A-25BIN	Buy Buy
	4Gb	AS4C128M32MD2A-25BIN AS4C128M32MD2A-18BIN	Buy Buy

New AEC-Q100-Compliant 2Gb DDR3L SDRAMs

Nathan — Tue, 06 Aug 2019 14:56:10 +0000

The News: To meet the demand for high-speed, low-voltage DDR3L SDRAMs in high-temperature applications, Alliance Memory introduces the new 2Gb AS4C128M16D3LC-12BAN and AS4C128M16D3LC-12BANTR featuring an automotive Grade 2 temperature range of -40°C to +105°C. Part Numbers: AS4C128M16D3LC-12BAN and AS4C128M16D3LC-12BANTR Key Specifications and Benefits:

AEC-Q100-compliant
Automotive temperature range of -40 °C to +105 °C
Offered in the 7.5mm by 13mm by 1.0mm 96-ball FBGA package
Operate from a single +1.35V power supply, with backwards compatibility to 1.5V (±0.075V)
128Mb x 16 configuration
Extremely fast transfer rates of 1600Mbps and clock rates of 800MHz
JEDEC-compliant
Support sequential and interleave burst types with read or write burst lengths of 4 or 8
Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
RoHS-compliant
Lead (Pb)- and halogen-free

Target Applications:

In-vehicle infotainment, communication, gateway, powertrain control, and advanced driving assistance systems (ADAS)

The Context: With the AS4C128M16D3LC-12BAN and AS4C128M16D3LC-12BANTR, Alliance Memory now offers a complete range of 2Gb DDR3L SDRAMs in commercial, industrial, and automotive temperature ranges. With minimal die shrinks, the devices provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions used in embedded systems, eliminating the need for costly redesigns and part requalification. Availability: Samples and production quantities of the new 2Gb DDR3L SDRAMs are available now, with lead times of six to eight weeks.

New 5V Parallel NOR Flash

Nathan — Tue, 17 Sep 2019 12:00:16 +0000

The News: Alliance Memory bolsters its product offering with a new line of 5V parallel NOR Flash memory products in boot and uniform sectored architectures. Available in densities from 1M to 16M, the devices offer access times of 55ns to enable fast, low-latency read speeds, allowing for both direct code execution and data storage in a single memory product. Part Numbers: AS29CF010-55CCIN, AS29CF040-55CCIN,AS29CF800T-55TIN,AS29CF800B-55TIN,AS29CF160T-55TIN, and AS29CF160B-55TIN Cross Reference Table

ALLIANCE MEMORY	AMIC	CYPRESS/SPANSION	MICRON	MACRONIX
AS29CF010-55CCIN	A29010	AM29F010B-FFJI	M29F001
AS29CF040-55CCIN	A29040B	AM29F040B-55JI	M29F040	MX29F040CQI-70G
AS29CF800T-55TIN	A29801A	AM29F800T	M29F800FT	MX29F800CTTI-70G
AS29CF800B-55TIN	A29801A	AM29F800B	M29F800FB	MX29F800CBTI-70G
AS29CF160T-55TIN	A29161A	AM29F160DT	M29F160FT
AS29CF160B-55TIN	A29161A	AM29F160DB	M29F160FB

Key Specifications and Benefits:

5V V_CC
Offered in boot and uniform sectored architectures
- Boot devices are available in top or bottom block configurations
Densities from 1M to 16M
Fast access times of 55ns
Reliable, long-term performance for embedded systems
- Minimum of 100,000 program/erase cycles per sector
- 20-year data retention at +125°C
Flexible sector architectures
Embedded algorithms for automatic write/erase and verification
Operate over an industrial temperature range of -40°C to +85°C
Current:
- 20mA typical active read currents
- 30mA typical program/erase currents
- Standby mode reduces power consumption to as low as 1μA
Packages:
- 32-pin PLCC (uniform sector devices)
- 48-pin TSOP I (boot devices)
Programmed in standard EPROM programmers
Lead (Pb)-free and RoHS 2.0 compliant

Target Applications:

Digital still cameras (DSC and DSLR), networking routers and switches, home gateways, set-top boxes (STB), automotive infotainment systems, industrial robotics, and medical electronics

The Context: With their fast boot times, Alliance Memory’s 5V parallel NOR flash solutions are ideal for high-performance and process-intensive applications. The devices’ flexible sector architectures allow any combination of sectors to be erased and reprogrammed without affecting the content of other sectors — ensured by a hardware protection feature that prevents inadvertent program or erase operations. An Embedded Program algorithm automatically writes and verifies bytes at specified addresses, while an Embedded Erase algorithm automatically erases and verifies the entire chip or designated sectors. Availability: Samples of the 5V parallel NOR Flash memory products are available now. Production quantities will be available in October 2019, with lead times of six to eight weeks.

AS4C256M16D4 and AS4C512M8D4: New 4Gb High-Speed CMOS DDR4 SDRAMs

Nathan — Thu, 31 Oct 2019 12:00:21 +0000

The News: Alliance Memory has expanded its product offering with a new line of high-speed CMOS DDR4 SDRAMs. For improved performance over previous-generation DDR3 devices, the 4Gb AS4C256M16D4 and AS4C512M8D4 offer lower power consumption and faster data transfer rates in 96-ball and 78-ball FBGA packages respectively. Part Numbers: AS 4C256M16D4-83BCN, AS4C256M16D4-83BCNTR, AS4C256M16D4-83BIN, AS4C256M16D4-83BINTR, AS4C256M16D4-75BCN, AS4C256M16D4-75BCNTR, AS4C256M16D4-75BIN, AS4C256M16D4-75BINTR, AS4C512M8D4-83BCN, AS4C512M8D4-83BCNTR, AS4C512M8D4-83BIN, AS4C512M8D4-83BINTR, AS4C512M8D4-75BCN, AS4C512M8D4-75BCNTR, AS4C512M8D4-75BIN, and AS4C512M8D4-75BINTR Key Specifications and Benefits:

Low power consumption of +1.2V (±0.06V)
Offered in 96-ball and 78-ball FBGA packages
Internally configured as 8 banks x 256Mb x 16 bit and 16 banks x 512Mb x 8 bit
Fast clock speeds of 1200MHz and 1333MHz
Extremely high transfer rates of 2400Mbps/pin and 2666Mbps/pin
Available in extended commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges
Support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly
Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
JEDEC- and RoHS-compliant
Lead (Pb)- and halogen-free

Target Applications:

Portable electronics, desktop computers, and servers for industrial, medical, IoT, automotive, gaming, and consumer applications

The Context: Compared to DDR3 SDRAMs, Alliance Memory’s new 4Gb DDR4 SDRAMs reduce operating voltages from +1.5V to +1.2V (±0.06V) to increase battery life in portable electronics such as notebook computers, smartphones, and tablets. For increased efficiency and performance in desktop computers and servers, the 256Mb x 16-bit AS4C256M16D4 and 512M x 8-bit AS4C512M8D4 offer up to 16 memory banks and deliver faster clock speeds to 1333MHz for extremely high transfer rates of 2400Mbps/pin (1200MHz) and 2666Mbps/pin (1333MHz). With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Availability: Samples of the new 4Gb DDR4 SDRAMs are available now. Production quantities will be available in November 2019, with lead times of eight weeks.

Micron M29F 5V NOR Flash Available Direct From Alliance Memory

Nathan — Tue, 21 Jul 2020 15:15:37 +0000

The News: Alliance Memory announces that the company is now the authorized source for genuine M29F (AM29F, MX29F) 5V parallel NOR Flash devices from Micron Technology, Inc., which Micron discontinued with Micron PCN #32160 (last time buy: March 2018). Micron is still building these parts specifically for Alliance Memory, and under a special agreement with Micron, the company will continue to support them through 2021. Parts Table:

Part number	Density	Boot type	Configuration, speed, package option, temperature range, and shipping option	Check stock availability
M29F200FB55M3F2	2Mb	Bottom	256K x 8, 128K x 16, parallel, 55ns, 44-pin SOP, Automotive grade 3 (-40°C~125°C) tape & reel	Buy
M29F400FB55M3F2	4Mb	Bottom	512K x 8, 256K x 16, parallel, 55ns, 44-pin SOP, Automotive grade 3 (-40°C~125°C) tape & reel	Buy
M29F400FB55N3E2	4Mb	Bottom	512K x 8, 256K x 16, parallel, 55ns, 48-pin TSOP, Automotive grade 3 (-40°C~125°C), tray	Buy
M29F400FB55N3F2	4Mb	Bottom	512K x 8, 256K x 16, parallel, 55ns 48-pin TSOP, Automotive grade 3 (-40°C~125°C), tape and reel	Buy
M29F400FT5AN6E2	4Mb	Top	512K x 8, 256K x 16, parallel, 55ns 48-pin TSOP, Automotive grade 6 (-40°C~85°C), tray	Buy
M29F800FB5AN6E2	8Mb	Bottom	1M x 8, 512K x 16, parallel, 55ns 48-pin TSOP, Automotive grade 6 (-40°C~85°C), tray	Buy
M29F800FB5AN6F2	8Mb	Bottom	1M x 8, 512K x 16, parallel, 55ns 48-pin TSOP, Automotive grade 6 (-40°C~85°C), tape & reel	Buy
M29F800FB55M3F2	8Mb	Bottom	1M x 8, 512K x 16, parallel, 55ns, 44-pin SOP, Automotive grade 6 (-40°C~125°C), tape & reel	Buy
M29F800FT55N3E2	8Mb	Top	1M x 8, 512K x 16, parallel, 55ns 48-pin TSOP, Automotive grade 3 (-40°C~125°C), tray	Buy
M29F160FB5AN6F2	16Mb	Bottom	2M x 8, 1M x 16, parallel, 55ns 48-pin TSOP, Automotive grade 6 (-40°C~85°C), tape & reel	Buy
M29F160FT55N3E2	16Mb	Top	2M x 8, 1M x 16, parallel, 55ns 48-pin TSOP, Automotive grade 3 (-40°C~125°C), tray	Buy

Key Specifications and Benefits:

AEC-Q100-certified
55ns access time
Available with -40°C to +85°C and -40°C to +125°C extended temperature ranges
Offered in 48-pin TSOP I and 44-pin SOIC packages

Target Applications:

Mobile phones, scientific instruments, medical devices, and many other commercial, industrial, and automotive applications

The Context: Alliance Memory is committed to meeting its customers’ legacy component needs and has had great success working with Micron to provide continued support for a variety of devices, including 512M SDRAMs and 8G DDR3L SDRAMs. The company is continuing that success with these M29F NOR Flash parts, which will provide its customers with a steady supply for a minimum of two years or more. In addition, Alliance Memory will be announcing a full line-up of other Flash devices in Q3 2020. Availability: Samples and production quantities of the Micron M29F 5V NOR Flash devices are available now.

Micron M45PE 3V Serial NOR Flash Available Direct from Alliance Memory

Nathan — Mon, 27 Jul 2020 18:00:26 +0000

The News: Alliance Memory announces that the company is now the authorized source for genuine M45PE (AT45DB) 3V Serial NOR flash devices from Micron Technology, Inc., which Micron discontinued with Micron PCN #32163 (last time buy: March 2018). Micron is still building these parts specifically for Alliance Memory, and under a special agreement with Micron, the company will continue to support them through 2021 and beyond. Parts Table:

Part number	Density	Type	Configuration, speed, package option, temperature range, and shipping option	Check stock availability
M45PE20-VMN6P	2Mb	3V, Page Erasable	256K x 8, 75MHz, 8pin SOIC Narrow body 150mils (SO8N) Industrial (-40°C to +85°C), 2000/tube	Buy
M45PE80-VMP6G	8Mb	3V, Page Erasable	1M x 8, 75MHz, VFQFPN8 6mm x 5mm (MLP8), Industrial (-40°C to +85°C), 490/tube	Buy
M45PE80-VMP6TG	8Mb	3V, Page Erasable	1M x 8, 75MHz, VFQFPN8 6mm x 5mm (MLP8), Industrial (-40°C to +85°C), 4000/reel	Buy
M45PE16-VMW6TG	16Mb	3V, Page Erasable	2M x 8, 75MHz, 8pin SOIC Wide body 208mils (SO8W) Industrial (-40°C to +85°C), 1500/reel	Buy

Key Specifications and Benefits:

Page-erasable
75MHz clock rate
Available with a -40°C to +85°C industrial temperature range
RoHS-compliant

Target Applications:

Mobile phones, scientific instruments, medical devices, and many other commercial, industrial, and automotive applications

The Context: Micron’s M45PE series products are page-erasable 3V Series NOR flash memory devices accessed by SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time using the PAGE WRITE or PAGE PROGRAM command. The PAGE WRITE command consists of an integrated PAGE ERASE cycle, followed by a PAGE PROGRAM cycle. Alliance Memory is committed to meeting its customers’ legacy component needs and has had great success working with Micron to provide continued support for a variety of devices, including 512M SDRAMs, 8G DDR3L SDRAMs, and M29F 5V flash. The company is continuing that success with these M45PE series parts, which will provide its customers with a steady supply for a minimum of two more years. In addition, Alliance Memory will be announcing a full line-up of other flash devices in Q3 2020. Availability: Samples and production quantities of the Micron M45PE 3V Serial NOR Flash devices are available now.

Micron N25Q Serial NOR Flash Products Available Direct From Alliance Memory

Nathan — Tue, 18 Aug 2020 18:19:25 +0000

The News: Alliance Memory today announced that the company is now the authorized source for genuine N25Q (AT25S / MX25L / MX25U / W25Q / S25FL / SST25 / EN25 / GD25 / IS25) 1.8V and 3V Serial NOR Flash devices from Micron Technology, Inc., which Micron discontinued with Micron PCN #32163 (last time buy: March 2018). Micron is still building these parts specifically for Alliance Memory, and under a special agreement with Micron, the company will continue to support them through 2021 and beyond. Parts Table:

Part number	Density	Type	Configuration, speed, package option, temperature range, and shipping option	Check stock availability
N25Q032A13EF440F	32Mb	3V, Multiple IO, Uniform Sector	64 Sectors, 4KB Sector Erase, 108MHz, U-PDFN-8 4mm x 3mm (MLP8), Industrial (-40°C to +85°C), 4000/reel	Buy
N25Q032A13EF4A0F	32Mb	3V, Multiple I/O, Uniform Sector	64 Sectors, 4KB Sector Erase, 108MHz, U-PDFN-8 4mm x 3mm (MLP8), Automotive (-40°C to +125°C), 4000/reel	Buy
N25Q032A13EF640F	32Mb	3V, Multiple I/O, Uniform Sector	64 Sectors, 4KB Sector Erase, 108MHz, V-PDFN-8 6mm x 5mm (MLP8), Industrial (-40°C to +85°C), 4000/reel	Buy
N25Q032A13ESC40F	32Mb	3V, Multiple I/O, Uniform Sector	64 Sectors, 4KB Sector Erase, 108MHz, 8pin SOIC Narrow body 150mils (SO8N), Industrial (-40°C to +85°C), 2500/reel	Buy
N25Q032A13ESC40G	32Mb	3V, Multiple I/O, , Uniform Sector	64 Sectors, 4KB Sector Erase, 108MHz, 8pin SOIC Narrow body 150mils (SO8N), Industrial (-40°C to +85°C), 2000/tube	Buy
N25Q032A13ESCA0F	32Mb	3V, Multiple I/O, Uniform Sector	64 Sectors, 4KB Sector Erase, 108MHz, 8pin SOIC Narrow body 150mils (SO8N), Automotive(-40°C to 125°C), 2500/reel	Buy
N25Q032A13ESFA0F	32Mb	3V, Multiple I/O, Uniform Sector	64 Sectors, 4KB Sector Erase, 108MHz, 16pin SOIC Wide body 300mils (SO16W), Automotive(-40°C to 125°C), 1000/reel	Buy
N25Q064A11ESEA0F	64Mb	1.8V, Multiple I/O, , Uniform Sector	128 Sectors, 4KB Sector Erase, 108MHz, 8pin SOIC Wide body 208 mils (SO8W), Automotive(-40°C to 125°C), 1500/reel	Buy
N25Q064A13EF640E	64Mb	3V, Multiple I/O, Uniform Sector	128 Sectors, 4KB Sector Erase, 108MHz, V-PDFN-8 6mm x 5mm (MLP8), Industrial (-40°C to +85°C), 490/tray	Buy
N25Q064A13EF8A0E	64Mb	3V, Multiple I/O, Uniform Sector	128 Sectors, 4KB Sector Erase, 108MHz, V-PDFN-8 8mm x 6mm (MLP8), Automotive(-40°C to +125°C), 320/tray	Buy
N25Q064A13EF8A0F	64Mb	3V, Multiple I/O, Uniform Sector	128 Sectors, 4KB Sector Erase, 108MHz, V-PDFN-8 8mm x 6mm (MLP8), Automotive(-40°C to +125°C), 4000/reel	Buy
N25Q064A13EF8H0E	64Mb	3V, Multiple I/O, Uniform Sector	128 Sectors, 4KB Sector Erase, 108MHz, V-PDFN-8 8mm x 6mm (MLP8), Industrial (-40°C to +85°C), 320/tray	Buy
N25Q064A13ESFA0F	64Mb	3V, Multiple I/O, Uniform Sector	128 Sectors, 4KB Sector Erase, 108MHz, 16pin SOIC Wide body 300 mils (SO16W), Automotive (-40°C to +125°C), 1000/reel	Buy

Key Specifications and Benefits:

Multiple input/output devices
Available in automotive (-40°C to +125°C) and industrial (-40°C to +85°C) temperature ranges
108MHz clock rate
RoHS-compliant

Target Applications:

Mobile phones, scientific instruments, medical devices, and many other commercial, industrial, and automotive applications

The Context: Micron’s N25Q series products are high-performance multiple input/output serial Flash memory devices manufactured on 65nm NOR technology. They feature execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Alliance Memory is committed to meeting its customers’ legacy component needs and has had great success working with Micron to provide continued support for a variety of devices, including 512M SDRAMs and 8G DDR3L SDRAMs. The company is continuing that success with these N25Q NOR Flash parts, which will provide its customers with a steady supply for a minimum of two more years. In addition, we’ll be announcing a full line-up of other Flash devices in Q3 2020. Availability: Samples and production quantities of the Micron N25Q 1.8V and 3V Serial NOR Flash devices are available now.

AS4C1G8D4 and AS4C512M16D4: New 8Gb High-Speed CMOS DDR4 SDRAMs

Nathan — Fri, 18 Sep 2020 06:00:19 +0000

The News: To meet the increasing demand for higher-density CMOS DDR4 SDRAMs, Alliance Memory today announced that it has expanded its portfolio with two new 8Gb devices. Delivering improved performance over previous-generation DDR3 SDRAMs, the AS4C1G8D4 and AS4C512M16D4 offer lower power consumption and faster data transfer rates in 78-ball and 96-ball FBGA packages, respectively. Parts Table:

Part #	Density	Organization	Package	Temp. range (°C)
AS4C1G8D4-75BCN	8Gb	1Gb x 8	78-ball FBGA	0 to +95
AS4C1G8D4-75BIN	8Gb	1Gb x 8	78-ball FBGA	-40 to +95
AS4C512M16D4-75BCN	8Gb	512Mb x 16	96-ball FBGA	0 to +95
AS4C512M16D4-75BIN	8Gb	512Mb x 16	96-ball FBGA	-40 to +95

Key Specifications and Benefits:

Low power consumption of +1.2V (±0.06V)
Offered in 78-ball and 96-ball FBGA packages
Internally configured as 1G x 8-bit (AS4C1G8D4) and 512M x 16-bit (AS4C512M16D4) with up to 16 memory banks
Fast clock speeds of 1333MHz
Extremely high transfer rates to 2666Mbps/pin
Available in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges
Support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly
Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
RoHS-compliant
Lead (Pb) and halogen-free

Target Applications:

Portable electronics, 5G designs, desktop computers, and servers for industrial, networking, IoT, automotive, gaming, and consumer markets applications

The Context: Compared to DDR3 SDRAMs, Alliance Memory’s new 8Gb DDR4 SDRAMs reduce operating voltages from 1.65V to +1.2V (±0.06V) to increase battery life in portable electronics such as smartphones and tablets. For increased efficiency and performance in 5G designs, desktop computers, and servers, the 1Gb x 8-bit AS4C1G8D4 and 512M x 16-bit AS4C512M16D4 offer up to 16 memory banks and deliver faster clock speeds of 1333MHz for extremely high transfer rates to 2666Mbps/pin. With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Availability: Samples of the new 8Gb DDR4 SDRAMs are available now. Production quantities will be available in September 2020 with lead times of 8 to 10 weeks.

New 1.8V and 3V SPI NAND Flash Memory: Alliance Memory AS5F Series

Nathan — Wed, 02 Sep 2020 17:27:54 +0000

The News: To meet the growing demand for serial peripheral interface (SPI) NAND Flash memory products in the automotive, industrial, communications, and consumer electronics markets, Alliance Memory announces the new AS5F series of 1.8V to 3V devices with densities from 1G to 8G and high-speed clock frequencies up to 120MHz. Parts Table:

Part number	Density	VCC	Speed
AS5F31G04SND-08LIN	1Gb	3V	120MHz
AS5F12G04SND-10LIN	2Gb	1.8V	100MHz
AS5F32G04SND-08LIN	2Gb	3V	120MHz
AS5F14G04SND-10LIN	4Gb	1.8V	100MHz
AS5F34G04SND-08LIN	4Gb	3V	120MHz
AS5F18G04SND-10LIN	8Gb	1.8V	100MHz
AS5F38G04SND-08LIN	8Gb	3V	120Mhz

Key Specifications and Benefits:

Densities from 1Gb to 8Gb
High-speed clock frequencies up to 120MHz
Reliable, long-term performance
60,000 program/erase cycles
10-year data retention
Industrial temperature range of -40°C to +85°C
25mA read/program currents and 30mA erase currents
Support standard, dual, and quad SPI operation
Lead (Pb)- and halogen-free LGA 8-pin package

Target Applications:

Multimedia data storage applications
Artificial intelligence (AI) implementation
Wi-Fi routers, mobile devices, xDSL/xPON technologies, data cards, IP cameras, set-top boxes, digital TVs, and smart home devices

The Context: While embedded systems have traditionally relied on SPI NOR Flash for boot code and parallel NAND Flash for data storage, several markets are migrating to SPI NAND Flash memory products, which can fulfill both of these functions. Not only does this reduce BOM costs, but the devices offer superior performance — increased reliability, faster boot-up, and higher write and erase speeds — in a smaller form factor. With the AS5F series, Alliance Memory is perfectly positioned to support its customers as they make the transition to SPI NAND Flash. Availability: Samples of the 1.8V and 3V SPI NAND Flash memory products will be available in August 2020. Production quantities will be available in September 2020, with lead times of eight weeks.

Micron J3, P30, and P33 1.8V and 3V Parallel NOR Flash Available Direct From Alliance Memory

Nathan — Thu, 05 Nov 2020 13:58:22 +0000

The News: Alliance Memory announces that the company is now an authorized reseller for Micron’s J3, P30, and P33 series of parallel NOR Flash devices, which Micron previously discontinued with product change notification #32163 (last time buy: March 2018). Micron is continuing to produce these devices for Alliance Memory and intends to only supply Alliance Memory for any new orders placed through mid-2021. Parts Table:

Series	Part number	Density	Block configuration	Voltage	Temperature range	Package	Check stock availability
J3	JS28F128J3F75A	128Mb	Uniform Block	Vcc/Q=2.7V~3.6V	-40°C to 85°C	56-Lead TSOP	Buy
	PC28F128J3F75A	128Mb	Uniform Block	Vcc/Q=2.7V~3.6V	-40°C to 85°C	64-ball BGA	Buy
	JS28F128J3F75B	128Mb	Uniform Block	Vcc/Q=2.7V~3.6V	-40°C to 85°C	56-Lead TSOP	Buy
	JS28F640J3F75A	64Mb	Uniform Block	Vcc/Q=2.7V~3.6V	-40°C to 85°C	56-Lead TSOP	Buy
	JS28F320J3F75A	32Mb	Uniform Block	Vcc/Q=2.7V~3.6V	-40°C to 85°C	56-Lead TSOP	Buy
P30	PC28F512P30BFB	512Mb	Bottom Boot	Vcc=1.7V~2.0V	-40°C to 85°C	64-ball BGA	Buy
	PC28F640P30TF65A	64Mb	Top Boot	Vcc=1.7V~2.0V	-40°C to 85°C	64-ball BGA	Buy
	PC28F640P30BF65B	64Mb	Bottom Boot	Vcc=1.7V~2.0V	-40°C to 85°C	64-ball BGA	Buy
P33	PC28F512P33BFD	512Mb	Bottom Boot	Vcc/Q=2.3V~3.6V	-40°C to 85°C	64-ball BGA	Buy
	PC28F128P33BF60A	128Mb	Bottom Boot	Vcc/Q=2.3V~3.6V	-40°C to 85°C	64-ball BGA	Buy
	JS28F128P33BF70A	128Mb	Bottom Boot	Vcc/Q=2.3V~3.6V	-40°C to 85°C	56-Lead TSOP	Buy
	PC28F640P33BF60A	64Mb	Bottom Boot	Vcc/Q=2.3V~3.6V	-40°C to 85°C	64-ball BGA	Buy

Key Specifications and Benefits:

Single-bit cell (SBC) and multi-level cell (MLC) Flash manufactured on 65nm NOR technology
Advanced write protection mechanisms
x8 and x16 bus widths
Common flash interface (CFI) compatible
Access times down to 60ns
Operate over a -40°C to +85°C temperature range
Offered in 56-lead TSOP and 64-ball BGA packages

Target Applications:

Mobile phones, scientific instruments, medical devices, and many other commercial, industrial, and automotive applications

The Context: Alliance Memory is committed to meeting its customers’ legacy component needs and has had great success working with Micron to provide continued support for a variety of devices, including 512M SDRAMs, 8G DDR3L SDRAMs, and flash memory including the M29F, M45PE, and N25Q. The company is continuing that success with these J3, P30, and P33 NOR Flash parts, which will provide its customers with a steady supply for a minimum of two more years. Availability: Samples and production quantities of the Micron J3, P30, and P33 1.8V and 3V parallel NOR Flash devices are available now. Product Datasheets: https://www.alliancememory.com/wp-content/uploads/pdf/flash/Datasheet/J3_Series_datasheet.pdf (J3 series) https://www.alliancememory.com/wp-content/uploads/pdf/flash/Datasheet/P30-64M-Datasheet.pdf (P30 series, 64Mb) https://www.alliancememory.com/wp-content/uploads/pdf/flash/Datasheet/P30-512M-Datasheet.pdf (P30 series, 512Mb) https://www.alliancememory.com/wp-content/uploads/pdf/flash/Datasheet/P33-64M_128M_Datasheet.pdf (P33 series, 64Mb and 128Mb) https://www.alliancememory.com/wp-content/uploads/pdf/flash/Datasheet/P33-512M_Datasheet.pdf (P33 series, 512Mb)

New 2Gb, 4Gb, and 8Gb LPDDR4 SDRAMs

Nathan — Mon, 14 Dec 2020 22:03:34 +0000

The News: Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new LPDDR4 devices featuring on-chip ECC. For improved performance with higher power efficiency than previous-generation LPDDR3 SDRAMs, the 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN offer lower power consumption and faster speeds in the 200-ball FBGA package. Parts Table:

Part #	Density	Organization	Speed	Package
AS4C128M16MD4-062BAN	2Gb with ECC	128Mb x 16	1600MHz	200-ball FBGA (10mm x 14.5mm x 0.8mm)
AS4C256M16MD4-062BAN	4Gb with ECC	256Mb x 16	1600MHz	200-ball FBGA (10mm x 14.5mm x 0.8mm)
AS4C128M32MD4-062BAN	4Gb with ECC	128Mb x 32	1600MHz	200-ball FBGA (10mm x 14.5mm x 0.8mm)
AS4C256M32MD4-062BAN	8Gb with ECC	256Mb x 32	1600MHz	200-ball FBGA (10mm x 14.5mm x 1.1mm)

Key Specifications and Benefits:

On-chip ECC
AEC-Q100 qualified
Low-voltage operation of 1.1V/1.8V
Fast clock speeds of 1.6GHz
Extremely high transfer rates of 3.2Gbps
Automotive A2 Grade, temperature range -40°C to +105°C
Eight internal banks per channel
x32 for 2-channels per device (AS4C128M32MD4, AS4C256M32MD4)
x16 for 1-channel per device (AS4C128M16MD4, AS4C256M16MD4)
Programmable read and write latencies
Programmable and on-the-fly burst lengths (16 and 32)
Selectable output drive strength
On-chip temperature sensor to control self-refresh rate
Offered in the 200-ball FBGA package

Target Applications:

5G, AI, and IoT
Portable electronics for the consumer and industrial markets
Automotive infotainment and ADAS systems

The Context: Compared to previous-generation LPDDR3 SDRAMs, Alliance Memory’s new 2Gb, 4Gb, and 8Gb LPDDR4 devices with on-chip ECC offer lower power consumption to increase battery life in portable electronics for the consumer and industrial markets, including tablets, wearables, handheld gaming consoles, personal navigation systems, and more. Providing increased efficiency for advanced audio and high-resolution video in embedded applications, the AS4C128M16MD4-062BAN, AS4C256M16MD4-062BAN, AS4C128M32MD4-062BAN, and AS4C256M32MD4-062BAN deliver fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications — including infotainment and ADAS systems — the AEC-Q100 qualified devices operate over a temperature range of -40°C to +105°C. With minimal die shrinks, Alliance Memory’s LPDDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification. Availability: Samples and production quantities of the new LPDDR4 SDRAMs are available now, with lead times of eight weeks.

Product Datasheet:

https://www.alliancememory.com/datasheets/as4C128m16md4/ (AS4C128M16MD4-062BAN, AS4C256M16MD4-062BAN, AS4C128M32MD4-062BAN, and AS4C256M32MD4-062BAN)

New 512 DDR3 and DDR3L SRAMs

Teresa — Thu, 05 Oct 2017 18:32:12 +0000

AS6C6416

Nathan — Thu, 30 Nov 2017 19:00:35 +0000

AS4C32M8SA-7TCN

Nathan — Mon, 22 Jan 2018 18:34:23 +0000

AS4C32M8SA-7TCN

New 8Gb LPDDR4X SDRAM

Nathan — Wed, 07 Jul 2021 15:00:31 +0000

The News: Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with a new LPDDR4X device featuring on-chip ECC. Offering an extension to the company’s fourth-generation LPDDR4 SDRAMs, the 8Gb AS4C256M32MD4V-062BAN offers ~50% lower power ratings in the 200-ball FBGA package for higher power efficiency. Part Numbers: AS4C256M32MD4V-062BAN Key Specifications and Benefits:

On-chip ECC
AEC-Q100 qualified
Low-voltage operation of 6V/1.1V/1.8V
Fast clock speeds of 1.6GHz
Extremely high transfer rates of 3.2Gbps
-40°C to +105°C operating temperature range
Organized as two channels per device
- Eight internal x16 banks per channel
Fully synchronous operation
Programmable read and write burst lengths of 16, 32, and on the fly
Selectable output drive strength
On-chip temperature sensor controls the self-refresh rate
Offered in the 200-ball FBGA package

Target Applications:

5G, AI, and IoT
Portable electronics for the consumer, commercial, and industrial markets
Automotive ADAS systems

The Context: Offering an extension to Alliance Memory’s fourth-generation LPDDR4 SDRAMs, the company’s new 8Gb LPDDR4X device with on-chip ECC offers ~50% lower power consumption to increase battery life in portable electronics for the consumer, commercial, and industrial markets, including smart phones, smart speakers, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the AS4C256M32MD4V-062BAN delivers fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications — including ADAS systems — the AEC-Q100 qualified device operates over a temperature range of -40°C to +105°C. Alliance Memory’s LPDDR4X SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification. Availability: Samples and production quantities of the AS4C256M32MD4V-062BAN are available now, with lead times of 12 weeks. Product Datasheet: https://www.alliancememory.com/as4c256m32md4v/ (AS4C256M32MD4V-062BAN)

3V, 64Mb Multiple I/O Serial NOR N25Q Replacement Flash Memory Solutions

Nathan — Wed, 20 Oct 2021 17:32:28 +0000

The News: Alliance Memory announces a new line of 3V multiple input/output serial NOR flash memory products designed to provide supply continuity for customers utilizing discontinued Micron Technology N25Q series devices as well as equivalents from other suppliers such as the W25Q, AT25Q, S25F, MX25L, IS25L and GD25Q series. Offering support for single, dual, and quad SPI modes, the AS25F series combines fast read performance up to 104MHz with fast program and erase times of 0.3ms and 40ms typical, respectively. Part numbers: AS25F364MQ-10SIN, AS25F364MQ-10WIN Key Benefits:

Operates in single, dual, and quad I/O SPI modes
High performance and high bandwidth read, erase, and program
Uniform 4KB, 32KB, and 64KB erase
Advanced security features (block protection, OTP)
Program/erase, suspend and resume
Burst read

Device Specification Table:

Part number	AS25F364MQ-10SIN	AS25F364MQ-10WIN
Density	64Mb
Bus width	Serial Multi IO (x1/x2/x4)
V_CC	2.7V to 3.6V
Frequency	104MHz
Active read current max.	25mA
Program / erase current max.	25mA
Standby current max.	10µA
Temperature range	-40°C to +85°C
Package	8-pin SOP Wide Body (209 mils)	8L WSON (6mm x 5mm)

Target Applications:

Computing, including notebook PCs, data storage
Consumer electronics, including DVD and BluRay players, printers, set-top boxes, mobile phones, digital cameras, wearables
Communications systems, including WLANs, DSL / cable modems, GPS
Industrial systems, including IoT, smart meters

Availability: Samples and production quantities of the 3V serial NOR flash memory products are available now, with lead times of 16 to 20 weeks. Link to product datasheets and Buy Now information: AS25F364MQ-10SIN and AS25F364MQ-10WIN

Six New 4Gb “A” Die DDR4 SDRAMs and a 16Gb Option From Micron Technology

Nathan — Mon, 29 Aug 2022 19:03:48 +0000

The News: Alliance Memory announces that it has expanded its portfolio of CMOS DDR4 SDRAMs with new “A” die versions of the 4Gb AS4C256M16D4 and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. Built on a finer process that results in a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. In addition, Alliance Memory is continuing its partnership with Micron Technology and offering the company’s MT40A1G16KH-062E DDR4 SDRAM to provide customers with a 16Gb option. Parts Table:

Part #	Density	Organization	Package	Speed	Temp. range (°C)
AS4C256M16D4-83BCN	4Gb	256M x 16	96-ball FBGA	1200MHz	0 to +95
AS4C256M16D4-83BIN	4Gb	256M x 16	96-ball FBGA	1200MHz	-40 to +95
AS4C256M16D4-75BCN	4Gb	256M x 16	96-ball FBGA	1333MHz	0 to +95
AS4C256M16D4-75BIN	4Gb	256M x 16	96-ball FBGA	1333MHz	-40 to +95
AS4C256M16D4A-62BCN	4Gb	256M x 16	96-ball FBGA	1600MHz	0 to +95
AS4C256M16D4A-62BIN	4Gb	256M x 16	96-ball FBGA	1600MHz	-40 to +95
AS4C256M16D4A-75BCN	4Gb	256M x 16	96-ball FBGA	1333MHz	0 to +95
AS4C256M16D4A-75BIN	4Gb	256M x 16	96-ball FBGA	1333MHz	-40 to +95
AS4C512M8D4-83BCN	4Gb	512M x 8	78-ball FBGA	1200MHz	0 to +95
AS4C512M8D4-83BIN	4Gb	512M x 8	78-ball FBGA	1200MHz	-40 to +95
AS4C512M8D4-75BCN	4Gb	512M x 8	78-ball FBGA	1333MHz	0 to +95
AS4C512M8D4-75	4Gb	512M x 8	78-ball FBGA	1333MHz	-40 to +95
AS4C512M8D4A-75BCN	4Gb	512M x 8	78-ball FBGA	1333MHz	0 to +95
AS4C512M8D4A-75BIN	4Gb	512M x 8	78-ball FBGA	1333MHz	-40 to +95
AS4C512M16D4-75BCN	8Gb	512M x 16	96-ball FBGA	1333MHz	0 to +95
AS4C512M16D4-75BIN	8Gb	512M x 16	96-ball FBGA	1333MHz	-40 to +95
AS4C1G8D4-75BCN	8Gb	1Gb x 8	78-ball FBGA	1333MHz	0 to +95
AS4C1G8D4-75BIN	8Gb	1Gb x 8	78-ball FBGA	1333MHz	-40 to +95
MT40A1G16KH-062E	16Gb	1Gb x 16	96-ball FBGA	1600MHz	0 to +95

Key Specifications and Benefits:

4Gb Alliance Memory DDR4 SDRAMs
Low operating voltages of +1.2V (±0.06V)
Built on a new process technology for fast clock speeds up to 1600MHz and transfer rates up to 3200Mbps
Support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly
An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
Offered in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges
16Gb Micron Technology DDR4 SDRAM
Operates from a +1.2V power supply over a commercial temperature range
Built on an 8n-prefetch architecture for high data rates of 3200 MT/s
Supports read or write burst lengths of BC4 or BL8 on the fly

Target Applications:

Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

The Context: Built on a finer process that results in a smaller chip than the original 4Gb AS4C256M16D4A and AS4C512M8D4 DDR4 SDRAMs, Alliance Memory’s new “A” die versions deliver improved performance — with lower power consumption down to +1.2V (±0.06V), faster clock speeds to 1600MHz, and higher transfer rates to 3200Mbps — at a lower cost. With minimal die shrinks, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. The new “A” die devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity. The addition of Micron Technology’s MT40A1G16KH-062E to Alliance Memory’s offering of DDR4 SDRAMs provides the company’s customers with access to a 16Gb device for a wide range of applications. Availability: Samples and production quantities of the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN are available now, with lead times of eight to 12 weeks. Micron’s MT40A1G16KH-062E is available now from stock. Product Datasheet: https://www.alliancememory.com/datasheets/AS4C256M16D4A/ (AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, and AS4C256M16D4A-75BIN) https://www.alliancememory.com/datasheets/MT40A1G16KH-062E/ (MT40A1G16KH-062E) https://www.alliancememory.com/datasheets/as4c512m8d4a/ (AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN)

1.8V, 128Mb Multiple I/O Serial NOR Flash Memory

Nathan — Tue, 06 Dec 2022 14:25:23 +0000

The News: Alliance Memory announces that the company has expanded its AS25F series of multiple input/output serial NOR flash memory products with two new 1.8V, 128Mb devices. Offering support for single, dual, and quad SPI modes — with a QPI function — the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN combine fast read performance up to 133MHz with fast page program and sector erase times of 0.3ms and 60ms typical, respectively. Part Numbers: AS25F1128MQ-70SIN, AS25F1128MQ-70WIN

Part number	AS25F1128MQ-70SIN	AS25F1128MQ-70WIN
Density	128Mb
Bus width	Serial Multi IO (x1/x2/x4)
V_CC	1.65V to 1.95V
Speed	133MHz
Active read current max.	27mA
Power down current max.	20µA
Standby current max.	70µA
Temperature range	-40°C to +85°C
Package	8-pin SOP (208mils)	8L WSON (6mm x 5mm)

Key Specifications and Benefits:

Operate in single, dual, and quad SPI modes, with a QPI function
Fast performance:
- 133MHz clock operation
- Program times of 0.3s
- Erase times of 60ms
Available in 8-pin SOP Wide Body (208mils) and 8L WSON (6x5mm) packages
Low power consumption:
- Operate from a single 1.65V to 1.95V power supply
- Active read current as low as 5mA
- <3µA typical in Deep Power-Down mode
Industrial temperature range of -40°C to +85°C
Reliable, long-term performance with 100,000 program/erase cycles
Uniform 4KB or 32KB or 64KB erase
8/16/32/64byte wrap-around burst read mode
Program/erase suspend and resume
Advanced security features protect content from hostile access and inadvertent programming and erasing:
- Block protection
- 4K-bit secured OTP

Target Applications:

Chipsets for PCs, servers, laptops, optical disc drives, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, mobile and wearable devices, digital cameras, and more

The Context: Alliance Memory's new 1.8V, 128Mb multiple input/output serial NOR flash memory products combine fast read, program, and erase times with low power consumption and advanced security features in the 8-pin SOP Wide Body (208mils) and 8L WSON (6x5mm) packages. With their enhanced performance, the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN are designed to meet the demands of the computer, consumer, communications, IoT, and mobile markets. Availability: Samples and production quantities of the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN are in stock and available now. Link to product datasheets and Buy Now information: AS25F1128MQ-70SIN and AS25F1128MQ-70WIN

New 1Mb and 4Mb LPSRAM

Nathan — Tue, 24 Jan 2023 15:49:23 +0000

The News: Alliance Memory has expanded its portfolio of low power asynchronous SRAM (LPSRAM) products with new 1Mb and 4Mb devices that feature embedded error-correction code (ECC). Compared to previous-generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER) for more reliable operation in a wide range of consumer, industrial, communications, and medical applications. Part Numbers: AS6CE4016B-45ZIN, AS6CE4016B-45BIN, AS6CE1016A-45ZIN Key Benefits:

Available in densities of 1Mb and 4Mb
Embedded ECC provides 1-bit error correction per byte
1.5V data retention voltage
Typical data retention current:
- 1µA for the 1Mb AS6CE1016A
- 2µA for the 4Mb AS6CE4016B
Operate from a single power supply of 2.7V to 3.6V
All inputs and outputs are fully TTL compatible

Device Specification Table:

Part number	Organization	V_CC range	Access time	Operating temperature	Package
AS6CE4016B-45ZIN	256K x 16	2.7 – 3.6V	45 ns	-40 ~ 85°C	44-pin 400 mil TSOP II
AS6CE4016B-45BIN	256K x 16	2.7 – 3.6V	45 ns	-40 ~ 85°C	48-ball 6mm x 8mm FBGA
AS6CE1016A-45ZIN	64K x 16	2.7 – 3.6V	45 ns	-40 ~ 85°C	44-pin 400 mil TSOP II

Target Applications:

Routers and switches in communications systems; programmable logic controllers in industrial automation systems; printers, gaming machines, musical instruments, and calculators; vending machines and ATMs; and elevator systems, control panels, and fire control systems

The Context: The ECC feature of Alliance Memory’s new LPSRAMs provides 1-bit error correction per byte, which makes the devices particularly suitable for low-power applications and battery backup non-volatile memory applications. Compared to previous generation solutions, the AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better FIT and MTTF characteristics, with reduced SER for more reliable operation in a very wide range of applications. Availability: Samples and production quantities of the AS6CE1016A (1Mb) and AS6CE4016B (4Mb) are in stock and available now. Link to product datasheets and Buy Now information: AS6CE4016B-45ZIN, AS6CE4016B-45BIN, and AS6CE1016A-45ZIN

New 16Gb DDR4 SDRAM

Nathan — Mon, 13 Feb 2023 16:19:22 +0000

The News: Alliance Memory announces that it has expanded its portfolio of CMOS DDR4 SDRAMs with a new 16Gb device in the 96-ball FBGA package. Providing the company’s customers with a higher-density option for a wide range of applications, the AS4C1G16D4-062BCN delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption and higher speeds and transfer rates. Part Number: AS4C1G16D4-062BCN Key Specifications and Benefits:

96-ball FBGA package
Low operating voltage of +1.2V (±0.06V)
Built on an 8n-prefetch architecture for fast clock speeds up to 1600MHz and transfer rates up to 3200MT/s
Supports sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly
An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
Commercial (0°C to +95°C) temperature range

Target Applications:

Portable electronics, such as smartphones and tablets
5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

The Context: Built on an 8n-prefetch architecture, the 1Gb x 16-bit AS4C1G16D4-062BCN not only offers Alliance Memory’s customers a higher-density option for industrial, networking, telecommunications, gaming, and consumer markets, it delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption down to +1.2V (±0.06V) and higher speeds and transfer rates of 1600MHz and 3200 MT/s, respectively. With minimal die shrinks, the DDR4 SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Availability: Samples and production quantities of the AS4C1G16D4-062BCN are in stock and available now. Link to product datasheet and Buy Now information: AS4C1G16D4-062BCN

16GB eMMC Storage Solution

Nathan — Thu, 06 Jul 2023 13:30:22 +0000

Explore the 16GB eMMC Storage Solution by Alliance Memory

Model ASFC16G31M-51BIN represents a breakthrough in eMMC technology. This 16GB eMMC storage solution is designed for versatility, catering to consumer, industrial, and networking applications. It integrates NAND flash memory with an advanced eMMC controller and flash transition layer (FTL) management software, all compactly packaged in an 11.5 mm by 13 mm 153-ball FBGA package.

Alliance Memory's 16GB eMMC Information

Part Number: ASFC16G31M-51BIN Key Specifications and Benefits:

Compliant with JEDEC eMMC v5.1 standards, offering features like boot operation, RPMB, device health report, field firmware updates, power-off notification, write leveling, HPI, secure trim/erase, and high-speed HS200/HS400 modes.
Backwards compatibility with eMMC versions v4.5 and v5.0 ensures broader application scope.
Operates across a wide industrial temperature range (-40°C to +85°C), enhancing durability.
Programmable bus widths (x1, x4, and x8) add flexibility to design requirements.
Internal LDO in NAND memory, functioning with a single 3V supply voltage.
Efficient eMMC controller with dual power options (1.8V or 3V) for versatile use.

Target Applications:

This 16GB eMMC solution is ideal for a range of devices, including smart watches, smartphones, tablets, digital TVs, set-top boxes, VR/AR headsets, SOM, COM, digital cameras, CCTV, surveillance systems, automation systems, point-of-sale systems, and other emerging embedded applications.

The Context: Alliance Memory's 16GB ASFC16G31M-51BIN eMMC storage solution is tailor-made for solid-state storage needs. It simplifies system integration, accelerates product development, and maximizes space efficiency. The device offers unparalleled reliability and stable performance, backed by cutting-edge FTL software. Availability: Secure your 16GB eMMC solution now. Available with a lead time of 12 weeks. For more information on the eMMC storage solutions: https://www.alliancememory.com/emmc/

New 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs

Nathan — Wed, 12 Jul 2023 14:53:56 +0000

The News: Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with four new LPDDR4X devices in a variety of densities. Offering an extension to the company’s fourth-generation LPDDR4 SDRAMs, the 2Gb AS4C128M16MD4V-062BAN, 4Gb AS4C256M16MD4V-062BAN, 8Gb AS4C512M16MD4V-053BIN, and 16Gb AS4C512M32MD4V-053BIN deliver ~50% lower power ratings in the 200-ball FBGA package for higher power efficiency. Part Numbers: AS4C128M16MD4V-062BAN, AS4C256M16MD4V-062BAN, AS4C512M16MD4V-053BIN, and AS4C512M32MD4V-053BIN Benefits:

Available in densities from 2Gb to 16Gb
Low-voltage operation of 0.6V
Fast clock speeds up to 1.86GHz
Extremely high transfer rates of 3.7Gbps
AEC-Q100-qualified with on-chip ECC for increased reliability (AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN)
Available in automotive (-40°C to +105°C) and industrial (40°C to +85°C) temperature ranges
Organized as single-channel (AS4C512M16MD4V-053BIN, AS4C128M16MD4V-062BAN, and AS4C256M16MD4V-062BAN) and dual-channel (AS4C512M32MD4V-053BIN) devices
- Eight internal x16 banks per channel
Fully synchronous operation
Programmable read and write burst lengths of 16, 32, and on the fly
Selectable output drive strength
On-chip temperature sensor controls the self-refresh rate
Offered in the 200-ball FBGA package

Device Specification Table:

Part #	AS4C128M16MD4V-062BAN	AS4C256M16MD4V-062BAN	AS4C512M16MD4V-053BIN	AS4C512M32MD4V-053BIN
Density	2Gb	4Gb	8Gb	16Gb
Organization	128M x 16	256M x 16	512M x 16	512M x 32
VDD1 / VDD2 / VDDQ	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V
Package	200-ball TFBGA	200-ball TFBGA	200-ball TFBGA	200-ball TFBGA
Clock Frequency	1600MHz	1600MHz	1866MHz	1866MHz
Data Rate	3200Mbps	3200Mbps	3733Mbps	3733Mbps
Temperature Range	-40°C to +105°C	-40°C to +105°C	-40°C to +85°C	-40°C to +85°C

Target Applications:

5G, AI, and IoT
Portable electronics for the consumer, commercial, and industrial markets
Automotive ADAS systems

The Context: Offering an extension to Alliance Memory’s fourth-generation LPDDR4 SDRAMs, the company’s new 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X devices deliver ~50% lower power consumption to increase battery life in portable electronics for the consumer, commercial, and industrial markets, including smart phones, smart speakers, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the AS4C128M16MD4V-062BAN, AS4C256M16MD4V-062BAN, AS4C512M16MD4V-053BIN, and AS4C512M32MD4V-053BIN deliver fast clock speeds up to 1.86GHz for extremely high transfer rates of 3.7Gbps. For automotive applications — including ADAS systems — the AEC-Q100-qualified AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN offer a temperature range of -40C to +105C and on-chip ECC for increased reliability. Alliance Memory’s LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification. Availability: Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of 12 weeks. Link to product datasheets and Buy Now information: AS4C128M16MD4V-062BAN, AS4C256M16MD4V-062BAN, AS4C512M16MD4V-053BIN, and AS4C512M32MD4V-053BIN

New 1.8V and 3.3V SLC Parallel NAND Flash

Nathan — Thu, 27 Jul 2023 14:33:52 +0000

The News: To meet the increasing demand for legacy SLC parallel NAND flash memory products in the automotive, industrial, communications, and consumer electronics markets, Alliance Memory introduces the new AS9F series of 1.8V and 3.3V devices with densities from 1Gb to 8Gb and fast block erase times down to 3ms typical. Part Numbers: AS9F31G08SA-25BIN, AS9F32G08SA-25BIN, AS9F34G08SA-25BIN, AS9F14G08SA-45BIN, AS9F38G08SA-25BIN, AS9F18G08SA-45BIN, AS9F14G08SA-45BAN, and AS9F18G08SA-45BAN Key Specifications and Benefits:

1.8V and 3.3V V_CC
Densities from 1Gb to 8Gb
Fast block erase times down to 3 ms typical
Compliant with the ONFI 1.0 specification
x8 I/O interface
Divisible into independently erasable blocks
- Allows valid data to be preserved, while old data is erased
Reliable, long-term performance
- 100,000 program/erase cycles — with 4-bit ECC per 528 bytes
- 10-year data retention
Offered in the 9.0 mm by 11.0 mm by 1.0 mm 63-ball FBGA package
Available in industrial (-40°C to +85°C) and automotive (-40°C to +105°C) temperature ranges
RoHS-compliant

Part #	Density	Bus Width	V_CC	Package	Temperature
AS9F31G08SA-25BIN	1Gb	x8	3.3V	63-ball FBGA	-40°C to +85°C
AS9F32G08SA-25BIN	2Gb	x8	3.3V	63-ball FBGA	-40°C to +85°C
AS9F34G08SA-25BIN	4Gb	x8	3.3V	63-ball FBGA	-40°C to +85°C
AS9F14G08SA-45BIN	4Gb	x8	1.8V	63-ball FBGA	-40°C to +85°C
AS9F38G08SA-25BIN	8Gb (DDP)	x8	3.3V	63-ball FBGA	-40°C to +85°C
AS9F18G08SA-45BIN	8Gb (DDP)	x8	1.8V	63-ball FBGA	-40°C to +85°C
AS9F14G08SA-45BAN	4Gb	x8	1.8V	63-ball FBGA	-40°C to +105°C
AS9F18G08SA-45BAN	8Gb (DDP)	x8	1.8V	63-ball FBGA	-40°C to +105°C

Target Applications:

Wi-Fi routers, DSL and cable modems, set-top boxes, digital TVs, artificial intelligence (AI) speakers, Internet of Things (IoT) devices, and more

The Context: While new designs in the automotive, industrial, communications, and consumer electronics markets are migrating toward serial NAND flash for mass storage, many manufacturers’ existing designs still require parallel NAND flash solutions, which are becoming increasingly difficult to find. With Alliance Memory’s AS9F series of 1.8V and 3.3V devices with densities from 1Gb to 8Gb, the company is perfectly positioned to provide its customers with a reliable source for these cost-effective solutions moving forward, saving them the expense of redesigns. Availability: Samples and production quantities of the 1.8V and 3.3V SLC parallel NAND flash memory products are available now, with lead times of 12 weeks. Link to product datasheets and Buy Now information: AS9F31G08SA-25BIN, AS9F32G08SA-25BIN, AS9F34G08SA-25BIN, AS9F14G08SA-45BIN, AS9F38G08SA-25BIN, AS9F18G08SA-45BIN, AS9F14G08SA-45BAN, and AS9F18G08SA-45BAN

eMMC: New 32GB, 64GB & 128GB Solutions

Nathan — Thu, 21 Sep 2023 15:27:43 +0000

The News: Alliance Memory introduces new 32GB, 64GB, and 128GB industrial-grade eMMC (embedded multi-media card) solutions.

For solid-state storage in consumer, industrial, and networking applications, the devices integrate high-reliability TLC NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package.

Part Numbers:

32GB eMMC: ASFC32G31T3-51BIN
64GB eMMC: ASFC64G31T5-51BIN
128GB eMMC: ASFC128G32T5-51BIN

Key Specifications and Benefits:

Feature high-reliability TLC NAND flash technology
Compliant with the JEDEC eMMC v5.1 industry standard to support features such as:
- Boot operation
- Replay protected memory block (RPMB)
- Device health report
- Field firmware updates
- Power-off notification
- Enhanced strobe features for faster and more reliable operation
- Write leveling
- High-priority interrupt (HPI)
- Secure trim/erase
- High-speed HS200 and HS400 modes
Backwards-compatible with eMMC v4.5 and v5.0
Operate over an industrial temperature range of -40°C to +85°C
Offer programmable bus widths of x1, x4, and x8
NAND memory with internal LDO can be powered with a single 3V supply voltage
The controller can be powered by 1.8V or 3V dual supply voltages

Target Applications:

Smart watches, tablets, digital TVs, set-top boxes, VR and AR headsets, digital cameras, CCTV, infotainment, surveillance, automation, point-of-sale systems, and emerging embedded applications

The Context: Alliance Memory has extended its offering of eMMCs to include densities from 4GB all the way up to 128GB, providing designers with a wide range of options to meet their solid-state storage needs in consumer, industrial, and networking applications. The devices integrate TLC NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package. With their TLC NAND flash technology, the devices deliver even higher reliability, endurance, and performance, while maintaining the same ease of integration as the company’s lower density eMMCs, speeding up product development and time to market, while saving space by eliminating the need for an external controller. Compliant with the JEDEC eMMC v5.1 industry standard, the eMMCs support a wide range of features such as boot operation, replay protected memory block (RPMB), device health report, field firmware updates, power-off notification, enhanced strobe features for faster and more reliable operation, write leveling, high-priority interrupt (HPI), secure trim/erase, and high-speed HS200 and HS400 modes. The devices are also backwards-compatible with eMMC v4.5 and v5.0. Availability: Samples of the eMMCs are available now. Production quantities are available with lead times of 8 to 10 weeks. Link to product datasheets and Buy Now information: ASFC32G31T3-51BIN, ASFC64G31T5-51BIN, and ASFC128G32T5-51BIN.

4Mb and 16Mb 3V Multiple I/O Serial NOR Flash Memory Solutions

Nathan — Tue, 14 Nov 2023 13:39:26 +0000

The News: Alliance Memory announces that is has expanded its offering of 3V multiple input/output serial NOR flash memory products with new 4Mb and 16Mb devices in the SOP8 Narrow Body (150mils) package. The 4Mb AS25F304MD-10S1IN and 16Mb AS25F316MQ-10S1IN combine fast read performance up to 104MHz with fast program and erase times down to 1.1ms and 2.6ms, respectively. Part Numbers: AS25F304MD-10S1IN, AS25F316MQ-10S1IN Key Benefits:

- Enhanced performance with fast read, program, and erase times
- Operate in single, dual, and quad (AS25F316MQ-10S1IN) SPI modes
- Reliable, long-term performance with 100,000 program/erase cycles and 20-year data retention
- Uniform 4KB or 32KB or 64KB erase
- Program/erase suspend and resume
- 8/16/32/64byte wrap-around burst read mode (AS25F316MQ-10S1IN)
- Advanced security features
  - Block protection
  - 128-bit unique ID for each device
  - Discoverable parameters (SFDP) register
  - 4K-bit secured OTP

Device Specification Table:

Part number	AS25F304MD-10S1IN	AS25F316MQ-10S1IN
Density	4Mb	16Mb
Bus width	Serial Multi IO (x1/x2)	Serial Multi IO (x1/x2/x4)
V_CC	2.7V to 3.6V
Frequency	104MHz
Active read current max.	4.4mA	3.7mA
Program/erase current max.	1.4mA	1.3mA
Program time typ.	1.1ms
Sector erase time typ.	2.6ms	5.1ms
Standby current typ.	8mA
Temperature range	-40°C to +85°C
Package	SOP8 Narrow Body (150mils)

Target Applications:

- Hard drives, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, digital cameras, Bluetooth^® devices, handheld GPS units, smart meters, and more

The Context: With their enhanced performance — including fast read performance up to 104MHz; fast program and erase times down to 1.1ms and 2.6ms, respectively; maximum erase/program currents down to 1.3mA; and maximum read currents down to 3.7mA at 104MHz — Alliance Memory’s new 4Mb and 16Mb 3V multiple input/output serial NOR flash memory products are designed to meet the demands of the computer, consumer, communications, and IoT markets. The 4Mb AS25F304MD-10S1IN offers support for single and dual SPI operation, while the 16Mb AS25F316MQ-10S1IN adds support for the quad SPI mode. Both devices provide reliable, long-term performance with 100,000 program/erase cycles and 20-year data retention. The flash memory products support uniform 4KB or 32KB or 64KB erase and feature program/erase suspend and resume. The AS25F316MQ-10S1IN also offers an 8/16/32/64byte wrap-around burst read mode. Advanced security features include block protection, 128-bit unique ID for each device, a discoverable parameters (SFDP) register, and 4K-bit secured OTP to protect content from hostile access and inadvertent programming and erasing. Availability: Samples and production quantities of the 3V serial NOR flash memory products are available now, with lead times of 8 to 12 weeks. Link to product datasheets and Buy Now information: AS25F304MD-10S1IN and AS25F316MQ-10S1IN

New 16Gb and 32Gb LPDDR4X SDRAMs

Nathan — Mon, 06 May 2024 13:52:08 +0000

The News: Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new 16Gb and 32Gb LPDDR4X devices that combine low power ratings with increased clock speeds and data rates in the 200-ball FBGA package. Part Numbers: AS4C512M32MD4V-046BIN and AS4C1G32MD4V-046BIN Key Benefits:

Offered in densities of 16Gb and 32Gb
Low-voltage operation of 0.6V
High clock frequencies of 2.133GHz
Extremely high data rates of 4.2Gbps
Offer a 32-bit bus width
Operate over an industrial temperature range of -40°C to +95°C
Organized as two channels per device
Eight internal x16 banks per channel
Fully synchronous operation
Programmable read and write burst lengths of 16, 32, and on the fly
Configurable drive strength
On-chip temperature sensor controls the self-refresh rate
Offered in the 200-ball FBGA package

Device Specification Table:

Part #	AS4C512M32MD4V-046BIN	AS4C1G32MD4V-046BIN
Density	16Gb	32Gb
Organization	512M x 32	1G x 32
VDD1 / VDD2 / VDDQ	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V
Package	200-ball TFBGA	200-ball TFBGA
Clock frequency	2133MHz	2133MHz
Data rate	4266Mbps	4266Mbps
Temp. range	-40°C to +95°C	-40°C to +95°C

Target Applications:

5G, AI, and IoT
Portable electronics for the consumer, commercial, and industrial markets

The Context: With low-voltage operation of 0.6V, the 16Gb AS4C512M32MD4V-046BIN and 32Gb AS4C1G32MD4V-046BIN LPDDR4X SDRAMS deliver higher power efficiency for increased battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the devices deliver high clock frequencies of 2.133GHz for extremely high data rates of 4.2Gbps. Alliance Memory’s LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for costly redesigns and part requalification. Availability: Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of 12 weeks. Link to product datasheets and Buy Now information: AS4C512M32MD4V-046BIN and AS4C1G32MD4V-046BIN

New 5GB and 10GB 3D pSLC eMMC Solutions

Nathan — Tue, 02 Jul 2024 12:41:24 +0000

The News: Alliance Memory introduces new industrial-grade 3D pSLC embedded multi-media card (eMMC) solutions for solid-state storage in consumer, industrial, and networking applications. Offering 30,000 program/erase cycles, the 5GB and 10GB devices integrate high-reliability 3D pSLC NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm by 1 mm 153-ball FBGA package. Part Numbers:

Key Specifications and Benefits:

High endurance with 30,000 program/erase cycles
Feature high-reliability 3D pSLC NAND flash memory technology
Compliant with the JEDEC eMMC v5.1 industry standard to support features such as:
- Boot operation
- Replay protected memory block (RPMB)
- Device health report
- Field firmware updates
- Power-off notification
- Enhanced strobe features for faster and more reliable operation
- Write leveling
- High-priority interrupt (HPI)
- Secure trim/erase
- High-speed HS200 and HS400 modes
Backwards-compatible with eMMC v4.5 and v5.0
Feature a 32MB boot partition
Operate over an industrial temperature range of -40°C to +85°C
Offer programmable bus widths of x1, x4, and x8
NAND memory with internal LDO can be powered with a single 3V supply voltage
The controller can be powered by 1.8V or 3V dual supply voltages

Part number	ASFC5G31P3-51BIN	ASFC10G31P3-51BIN
Capacity (GB)	5	10
eMMC Version	5.1	5.1
NAND Die	128Gb x 1	256Gb x 1
Temperature range (°C)	-40 to +85	-40 to +85
Dimensions (mm)	11.5 x 13 x 1	11.5 x 13 x 1
Package	153-ball FBGA	153-ball FBGA

Target Applications:

Smart watches, tablets, digital TVs, set-top boxes, VR and AR headsets, digital cameras, CCTV, infotainment, surveillance, automation, point-of-sale systems, and emerging embedded applications

The Context: Alliance Memory has extended its offering of eMMCs to include devices featuring 3D pSLC NAND flash memory technology, providing designers with more options to meet their solid-state storage needs in consumer, industrial, and networking applications. The 5GB and 10GB solutions integrate 3D pSLC NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm by 1 mm 153-ball FBGA package. Offering 30,000 program/erase cycles, the lower-density devices deliver higher reliability and endurance than MLC and TLC NAND solutions while maintaining the same ease of integration, speeding up product development and time to market while saving space by eliminating the need for an external controller. Compliant with the JEDEC eMMC v5.1 industry standard, the eMMCs support features such as boot operation, replay protected memory block (RPMB), device health report, field firmware updates, power-off notification, enhanced strobe features for faster and more reliable operation, write leveling, high-priority interrupt (HPI), secure trim/erase, and high-speed HS200 and HS400 modes. The devices are also backwards-compatible with eMMC v4.5 and v5.0. Availability: Samples of the eMMCs are available now. Production quantities are available with lead times of eight weeks. Link to product datasheets and Buy Now information: ASFC5G31P3-51BIN and ASFC10G31P3-51BIN.

New 16Gb LPDDR4X SDRAM

Nathan — Tue, 10 Sep 2024 16:25:57 +0000

The News: Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with a new single-channel 16Gb LPDDR4X device that combines low power ratings with increased clock speeds and data rates in the 200-ball FBGA package. Part Number:

AS4C1G16MD4V-046BIN

Key Specifications and Benefits:

Low-voltage operation of 0.6V
High clock frequencies of 2.133GHz
Extremely high data rates of 4.2Gbps
Operates over an industrial temperature range of -40°C to +95°C
Single channel consists of eight internal x16 banks
Fully synchronous operation
Programmable read and write burst lengths of 16, 32, and on the fly
Configurable drive strength
On-chip temperature sensor controls the self-refresh rate
Offered in the 200-ball FBGA package

Part number	AS4C1G16MD4V-046BIN
Density	16Gb
Organization	1G x 16
VDD1 / VDD2 / VDDQ	1.8V / 1.1V / 0.6V
Package	200-ball TFBGA
Clock frequency	2133MHz
Data rate	4266Mbps
Temp. range	-40°C to +95°C

Target Applications:

5G, AI, and IoT
Portable electronics for the consumer, commercial, and industrial markets

The Context: With low-voltage operation of 0.6V, the AS4C1G16MD4V-046BIN delivers higher power efficiency for increased battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, wearables, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAM delivers a high clock frequency of 2.133GHz for an extremely high data rate of 4.2Gbps. Alliance Memory’s LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for costly redesigns and part requalification. Availability: Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of eight weeks. Link to product datasheets and Buy Now information: AS4C1G16MD4V-046BIN.

New 8Gb, 16Gb, and 32Gb CMOS DDR4 SDRAMs

Nathan — Thu, 31 Oct 2024 15:07:30 +0000

The News: Alliance Memory has expanded its portfolio of CMOS DDR4 SDRAMs with six new 8Gb, 16Gb, and 32Gb devices in 78-ball FBGA and 96-ball FBGA packages. Part Numbers: AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN Key Benefits:

Offered in densities of 8Gb, 16Gb, and 32Gb
Low voltage operation of +1.2V (±0.06V)
Built on an 8n-prefetch architecture
Fast clock speeds of 1600MHz and transfer rates of 3200 MT/s
Support sequential and interleave burst types
Read or write burst lengths of BC4, BL8, and on the fly
Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
Offered in 78-ball FBGA and 96-ball FBGA packages

Device Specification Table:

Part #	Density	Organization	Package	Speed	Temp. range (°C)
AS4C512M16D4B-62BCN	8Gb	512M x 16	96-ball FBGA	1600MHz	0 to +95
AS4C1G8D4B-62BCN	8Gb	1Gb x 8	78-ball FBGA	1600MHz	0 to +95
AS4C1G16D4A-62BCN	16Gb	1Gb x 16	96-ball FBGA	1600MHz	0 to +95
AS4C2G8D4A-62BCN	16Gb	2Gb x 8	78-ball FBGA	1600MHz	0 to +95
AS4C2G16D4-62BCN	32Gb	2Gb x 16	96-ball FBGA	1600MHz	0 to +95
AS4C4G8D4-62BCN	32Gb	4Gb x 8	78-ball FBGA	1600MHz	0 to +95

Target Applications:

5G and IoT designs
Portable electronics such as smartphones and tablets
Computing applications; surveillance, gaming, and networking storage systems; smart meters; and human-machine interfaces (HMI), digital signal controllers, and PNDs

The Context: Providing Alliance Memory’s customers with higher-density options for a wide range of applications, the AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN are built on a new process technology to deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in the commercial (0°C to +95°C) temperature range, the devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets. Availability: Samples and production quantities of the AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN are available now, with lead times of four weeks. Link to product datasheets and Buy Now information: AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN

New 3.3V Serial NOR FLASH

Nathan — Thu, 07 Nov 2024 16:00:21 +0000

The News: For embedded applications that require reliable, high-performance code storage and execution, Alliance Memory expands its Serial NOR Flash product line with three new 3.3V families with densities of 128Mb, 256Mb, and 512Mb. Part Numbers: AS25F3128MQ-6SIN/TR, AS25F3128MQ-6WINTR, AS25F3256MQ-7S2INTR, AS25F3256MQ-7W2INTR, AS25F3512MQ-7S2INTR, and AS25F3512MQ-7W2INTR Key Benefits:

Available with densities of 128Mb, 256Mb, and 512Mb
Support Single, Dual, and Quad I/O SPI and QPI interfaces
Fast read frequencies up to 166 MHz for 128Mb devices and 133 MHz for 256Mb and 512Mb devices
Uniform 4KB, 32KB, and 64KB erase capabilities
Program/erase suspend and resume functions
Endurance exceeding 100,000 program/erase cycles
Power supply lock-down and OTP protection features simplify system integration and enhance product reliability
High-bandwidth read, erase, and program capabilities ensure optimal performance in critical applications

Device Specification Table:

Part #	Density	Speed	Package	Temperature
AS25F3128MQ-6SIN/TR	128Mb	166MHz	8-pin SOP (208 mils)	-40°C to +85°C
AS25F3128MQ-6WINTR	128Mb	166MHz	8L WSON (5x6mm)	-40°C to +85°C
AS25F3256MQ-7S2INTR	256Mb	133MHz	16-pin SOP (300 mils)	-40°C to +85°C
AS25F3256MQ-7W2INTR	256Mb	133MHz	8L WSON (6x8mm)	-40°C to +85°C
AS25F3512MQ-7S2INTR	512Mb	133MHz	16-pin SOP (300 mils)	-40°C to +85°C
AS25F3512MQ-7W2INTR	512Mb	133MHz	8L WSON (6x8mm)	-40°C to +85°C

Target Applications:

Computing, consumer electronics, communication, and IoT applications

The Context: With the introduction of these new high-density Serial NOR Flash devices, Alliance Memory is expanding its offering to meet the needs of customers looking for higher-density, reliable memory solutions in a wide range of applications. The devices offer high performance and flexibility, making them an ideal choice for applications ranging from mobile PCs, servers, and laptops to digital TVs, printers, and connectivity modules. Availability: Samples of the new Serial NOR Flash devices are available now. Lead times for large orders are estimated at 15 weeks. Link to product datasheets and Buy Now information: AS25F3128MQ-6SIN/TR, AS25F3128MQ-6WINTR, AS25F3256MQ-7S2INTR, AS25F3256MQ-7W2INTR, AS25F3512MQ-7S2INTR, and AS25F3512MQ-7W2INTR

Visit Alliance Memory at Embedded World 2025

gafie — Thu, 06 Feb 2025 00:28:44 +0000

11 – 13 March 2025 Nuremberg, Germany

Come meet the team at Hall 3A Stand 215 on the exhibit floor, or request an appointment to discuss your projects. Schedule a meeting with us Need a ticket to the Embedded World exhibition? Click here and then enter ew25web as your voucher code. You will receive a free permanent ticket* with which you can visit the embedded world exhibition on site on all three days of the trade fair and/or take part in the digital trade fair programme.

New Alliance Memory Products on Display at Embedded World 2025

Welcome to the Alliance Memory exhibit at Embedded World 2025. This year, we’ll be showcasing our expanded portfolio, including a new 32Mb fast SRAM, DDR4 and LPDDR4X SDRAMs, and high-density serial NOR Flash devices.

⎯ NEW PRODUCTS ⎯

New 32Mb Fast SRAM

Alliance Memory has expanded its offering of fast CMOS SRAMs with a new 32Mb device in the 6 mm by 8 mm 48-ball FBGA package. Configured as 2M x 16, the AS7CW2M16-10BIN offers a wide power supply range from 1.65V to 3.6V, fast access times down to 10 ns minimum, data retention voltages down to 1.5V minimum, and low power consumption with operating currents down to 43mA typical and standby current of 10mA typical. Learn More

⎯ FEATURED PRODUCTS ⎯

8Gb, 16Gb, and 32Gb CMOS DDR4 SDRAMs

To meet the demand for higher-density CMOS DDR4 SDRAMs, Alliance Memory has expanded our portfolio with new 8Gb, 16Gb, and 32Gb devices that combine low power consumption with fast clock speeds up to 1600MHz and transfer rates up to 3200 MT/s in 78-ball FBGA and 96-ball FBGA packages. Learn More

New 16Gb LPDDR4X SDRAM

We've expanded our offering of high-speed CMOS mobile low-power SDRAMs with a new single-channel 16Gb LPDDR4X device that combines low power ratings with increased clock speeds and data rates in the 200-ball FBGA package. Learn More

Serial NOR Flash High-Density Devices

We've added to our serial NOR Flash product line with the introduction of three new 3.3 V families with density of 128Mb, 256Mb, and 512Mb. These devices offer high performance and flexibility, making them an ideal choice for applications ranging from mobile PCs, servers, and laptops to digital TVs, printers, and connectivity modules. This is addition to the Micron serial NOR Flash products that we continue to support while stock lasts. Learn More

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