Alliance Memory

Alliance Memory Appoints K. K. Fan as Director of Operations

claire — Wed, 19 Feb 2014 19:46:04 +0000

SAN CARLOS, Calif. — Feb. 19, 2014 — Alliance Memory today announced that K. K. Fan has joined the company as its director of operations in Taiwan. In his new role, Mr. Fan will be responsible for overseeing the company's daily operations as its SRAM and DRAM products continue to experience worldwide growth. Mr. Fan has worked in the semiconductor industry since 1992, holding key positions in sales and production management. He comes to Alliance Memory from ChipMOS Technology Inc., where he served as director of sales and manager of IC production testing. Previously, he held the position of section manager for IC production testing at Mosel Vitelic Inc. "K. K. has worked in the semiconductor industry for 20 years, and he is familiar with our business needs and those of our customers," said David Bagby, president and CEO of Alliance Memory. "With his extensive knowledge and wealth of management-level experience, K. K. is a perfect fit for Alliance Memory and will play a key role as we expand our product offerings." "For customers worldwide, there is a great need for legacy memory products to avoid costly redesigns," Mr. Fan said. "It's a very exciting time to join Alliance Memory, and I look forward to applying my industry knowledge to the company's day-to-day operations as it continues its double-digit growth." Mr. Fan holds a bachelor's degree in industrial management from the National Taiwan University of Science and Technology and an MBA in technology management from the National Chiao Tung University. Mr. Fan is based in Taiwan and reports to Mr. Bagby.

Alliance Memory Announces Rep Agreement With Customer 1st

claire — Tue, 11 Feb 2014 19:51:08 +0000

SAN CARLOS, Calif. — Feb. 11, 2014 — Alliance Memory today announced it has concluded an agreement with Customer 1st, a value-added representative for electronic components and subassemblies to OEM customers throughout the Upper Midwest United States. Under the agreement, Customer 1st is now offering Alliance Memory’s entire lineup of SRAMs and DRAMs to customers in Minnesota, Wisconsin, Iowa, Illinois, Kansas, Missouri, Nebraska, and North and South Dakota. Alliance Memory manufactures a complete line of SRAMs, including 3.3 V and 5 V fast asynchronous SRAMs with speeds from 10 ns to 20 ns; wide voltage low-power devices with densities from 64 Kb to 32 Mb; 2.5 V and 3.3 V ZBT/Sync pipelined burst (SPB)/Sync burst (SB) products; and synchronous DRAMs (SDR) with densities from 16 Mb to 512 Mb and commercial, industrial, and automotive temperature ranges. The company also offers double data rate synchronous DRAMs (SDRAM, DDR1, DDR2, and DDR3) with densities from 64M to 4GB. "With its firmly established relationships with key target customers and extensive market knowledge to apply to our product line, Customer 1st is a perfect fit to help us expand our reach in the Midwestern U.S.," said Dan Gilbert, vice president of sales at Alliance Memory. "We are excited that the company recognizes our solutions as valuable additions to its product lineup, and we look forward to meeting its customers’ needs for legacy SRAMs and DRAMs." "Many of our customers’ products have a long lifetime in the markets they serve, but the memory parts they require don't," said Tim Bischof, president of Customer 1st. "As a result, they need a reliable source for pin-for-pin-compatible legacy memory devices in order to avoid costly redesigns. By adding Alliance Memory to our product lineup, that is exactly what we’re offering." More information on Customer 1st is available at www.customer1st.com.

Alliance Memory Releases 2M x 32 and 4M x 32 High-Speed CMOS SDRAMs in 90-Ball TFBGA and 86-Pin TSOP II Packages

claire — Tue, 05 Nov 2013 19:55:26 +0000

SAN CARLOS, Calif. — Nov. 5, 2013 — Alliance Memory today extended its 64M and 128M lines of high-speed CMOS synchronous DRAMs (SDRAM) with a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package. The devices released today provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth. For these applications, the AS4C2M32S-7TCN and AS4C4M32S-7TCN feature fast access time from clock down to 5.4 ns and fast clock rates to 166 MHz. Offering a commercial temperature range of 0 °C to 70 °C, the SDRAMs operate from a single +3.3-V (± 0.3 V) power supply and are lead (Pb)- and halogen-free. The devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance. The AS4C2M32S-7TCN and AS4C4M32S-7TCN are the latest in Alliance Memory's full line of high-speed SDRAMs, which includes devices with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages.

Part Number	AS4C2M32S-7TCN	AS4C4M32S-7TCN
Density	64 Mb	128 Mb
Configuration	2M x 32 bit	4M x 32 bit
Access Time	5.4 ns	5.5 ns
Clock Rate	143 MHz	166 MHz
Package	90-ball TFBGA	86-pin TSOP II

Samples and production quantities of the new SDRAMs are available now, with lead times of eight weeks for large orders. Pricing starts at $0.90 per piece for the AS4C2M32S-7TCN and $1.50 per piece for the AS4C4M32S-7TCN.

Alliance Memory Expands Distribution Agreement With Rotakorn Electronics

claire — Tue, 15 Oct 2013 20:01:40 +0000

Hybrid Distributor Now Carries Alliance Memory SRAMs and DRAMs in the Nordic Region, Estonia, and Poland SAN CARLOS, Calif. — Oct. 15, 2013 — Alliance Memory today announced that it has expanded its distribution partnership with Rotakorn Electronics AB, a leading hybrid distributor in Sweden. Under the distribution agreement, Rotakorn Electronics will now offer Alliance Memory's entire lineup of SRAMs and DRAMs to its extensive customer base throughout Sweden, Finland, Denmark, Norway, Estonia, and Poland. Based in Atvidaberg, Sweden, Rotakorn Electronics is a hybrid distributor of active, passive, and electromechanical products. The company provides traditional product distribution services, in addition to shortage handling, excess handling, bill of materials (BOM) handling, application support, and testing services. Previously, the company offered Alliance Memory products to specific Tier-1 customers in the Nordic region. Alliance Memory manufactures a complete line of SRAMs, including 3.3 V and 5 V fast asynchronous SRAMs with speeds from 10 ns to 20 ns; wide-voltage, low-power devices with densities from 64 Kb to 32 Mb; 2.5 V and 3.3 V ZBT/Sync pipelined burst (SPB)/Sync burst (SB) products; and synchronous DRAMs (SDR) with densities from 16 Mb to 512 Mb and commercial, industrial, and automotive temperature ranges. In addition, the company offers double-data-rate synchronous DRAMs (DDR1, DDR2 SDRAM) with densities from 64 Mb to 1 GB. "As a hybrid distributor, Rotakorn has proved to be a perfect fit with Alliance Memory for a number of reasons, including the company's specialization in BOM handling and its ability to identify and monitor existing and future end-of-life (EOL) components for its customers," said Sue Macedo, sales director, Europe, for Alliance Memory. "All of these factors have been instrumental in helping us gain traction with key companies in the Nordic market. We look forward to bringing our solutions to all of Rotakorn's customers in the region and extending our success with the company to Estonia and Poland." "For our customers, EOL components are a part of doing business, but it can be a costly one if redesigns are required," said Peder Olausson, founder and chairman of Rotakorn. "So providing a cost-effective, continuous component supply is an important part of the service we offer. With its wide variety of reliable drop-in, pin-for-pin-compatible legacy parts, Alliance Memory has played an important role in achieving this for our Tier-1 customers in the Nordic countries. We are excited to extend these benefits to all of our Nordic customers and those in Estonia and Poland." More information about Rotakorn Electronics is available at www.rotakorn.se.

Alliance Memory Introduces New High-Speed CMOS Double Data Rate (DDR1) Synchronous DRAMs With 64-Mb, 128-Mb, 256-MB, and 512-Mb Densities in 66-pin TSOP II Packages

claire — Wed, 18 Sep 2013 20:06:15 +0000

SAN CARLOS, Calif. — Sept. 18, 2013 — Alliance Memory today introduced a new line of high-speed CMOS double data rate synchronous DRAMs (DDR1 SDRAM) with densities of 64 Mb (AS4C4M16D1), 128 Mb (AS4C8M16D1), 256 Mb (AS4C16M16D1), and 512 Mb (AS4C32M16D1). The devices released today provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in medical, communications, industrial, and consumer products requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications. Internally configured as four banks of 1M, 2M, 4M, or 8M word x 16 bits with a synchronous interface, the DDR1 SDRAMs operate from a single +2.5-V (± 0.2 V) power supply, and are lead (Pb) and halogen free. The AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, and AS4C32M16D1 feature a fast clock rate of 200 MHz, a commercial temperature range of 0 °C to 70 °C, and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch. The DDR1 SDRAM's provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Part Number	AS4C4M16D1	AS4C8M16D1	AS4C16M16D1	AS4C32M16D1
Density	64 Mb	128 Mb	256 Mb	512 Mb
Configuration	4M x 16 bit	8M x 16 bit	16M x 16 bit	32M x 16 bit
Clock Rate	200 MHz	200 MHz	200MHz	200 MHz
Date Rate	400 Mbps/pin	400 Mbps/pin	400 Mbps/pin	400 Mbps/pin
Package	66-pin TSOP II	66-pin TSOP II	66-pin TSOP II	66-pin TSOP II

Samples and production quantities of the new (all available now) AS4C16M16D1 and AS4C32M16D are available now, with lead times of eight weeks. The AS4C4M16D1 and AS4C8M16D1 will be available in July. Pricing ranges from $0.85 to $1.60 per piece.

Alliance Memory Appoints Ted Kasahara as Country Manager, Japan

claire — Mon, 16 Sep 2013 20:11:33 +0000

Download press release in Japanese. SAN CARLOS, Calif. — Sept. 16, 2013 — Alliance Memory announced that it has bolstered support for its customers in Japan with the appointment of Ted Kasahara as country manager. In his new role, Mr. Kasahara is responsible for developing and maintaining strong relationships with Alliance Memory's customers in the Japanese market. "We've been very successful in penetrating the Japan market with our SRAM and synchronous DRAM products over the last few years, and the addition of Ted to our team is a key step in maintaining the levels of service and support that our customers rely on," said Dan Gilbert, vice president of sales at Sales Alliance Memory. "With the depth of his industry knowledge and experience in the Japanese market, he will provide an invaluable resource for our existing customers, while allowing us to develop new relationships throughout the country." "I worked for Alliance Semiconductor before Alliance Memory acquired its fast asynchronous product line, so I'm familiar with the technology and how it meets the needs of the Japanese market," said Mr. Kasahara. "I am very excited to contribute my knowledge to the Alliance Memory team, and look forward to working closely with our customers in Japan as we help them to avoid costly redesigns with our legacy components." Before joining Alliance Memory, Mr. Kasahara served as president of Kasahara Trading Ltd., where he promoted and distributed a wide range of products, including connectors for memory cards, hydraulic cylinders, and machinery for semiconductors. Previously, as area sales manager for Alliance Semiconductor Corp., he established the company's Japan office and organized its distributor network. Kasahara is based in Tokyo and reports to Mr. Gilbert.

Alliance Memory Appoints Mars Zhang as Country Manager, China

claire — Tue, 27 Aug 2013 20:14:24 +0000

SAN CARLOS, Calif. — August 27, 2013 — Alliance Memory today announced that it has bolstered support for its customers in China with the appointment of Mars Zhang as country manager. In his new role, Zhang is responsible for developing and maintaining strong relationships with Alliance Memory's customers in China. "Over the past few years, Alliance has added key distributors in China while introducing new SRAM and synchronous DRAM products," said William Chen, director of sales, Asia, for Alliance Memory. "The addition of Mars to our team in Asia provides an invaluable resource for our existing customers in terms of support while also allowing us to develop new relationships throughout the country." "I have worked with Alliance Memory before at the distributor level, and I'm thrilled to be joining the team," said Zhang. "This is a fantastic opportunity, and I look forward to working closely with our customers in China as we help them to avoid costly redesigns with our legacy components." Previously, Zhang served as sales engineer for Yosun South China Corp Ltd. and Future Electronics, where he represented product lines from major manufacturers in a wide range of markets, including industrial, smart grid, and RFID. He holds a bachelor's degree in electrical engineering and automation from the Guilin University of Electronic Technology. Zhang is based in Shenzhen, China, and reports to Chen.

Alliance Memory Launches Two New 16M Fast (10 ns) CMOS SRAMs in 48-Pin TSOP-I and 48-Ball TFBGA Packages

claire — Tue, 11 Jun 2013 20:17:24 +0000

SAN CARLOS, Calif. — June 11, 2013 — Alliance Memory today expands its line of legacy high-speed CMOS SRAMs with two new 16M ICs. Featuring fast access times of 10 ns, the AS7C316096A (2048K x 8) and AS7C316098A (1024K x 16) are both offered in the 48-pin, 12-mm by 20-mm TSOP-1 package. In addition, the AS7C316098A is available in the 48-ball, 6-mm by 8-mm TFBGA package. The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in communications, industrial, automotive, and medical applications requiring fast access times. The AS7C316096A and AS7C316098A provide low power consumption with operating currents of 90 mA typical and standby currents of 4 mA typical. The SRAMs operate from a single power supply of 3.3 V, and all inputs and outputs are fully TTL-compatible. The AS7C316096A and AS7C316098A are fabricated using very high-performance, high-reliability CMOS technology, and their current is stable within the operating temperature range of - 40 °C to + 85 °C. The devices offer fully static operation and tri-state output, and they feature a data retention voltage of 1.5 V minimum. Samples and production quantities of the AS7C316096A and AS7C316098A are available now, with a lead time of six to eight weeks for large orders.

Alliance Memory Launches New High-Density, Low-Power 32M CMOS SRAM Offering 2.7-V to 3.6-V Power Supply in 12-mm by 20-mm TSOP-I Package

claire — Wed, 01 May 2013 20:21:16 +0000

SAN CARLOS, Calif. — May 1, 2013 — Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 32M IC (2M x 16 / 4M x 8 switchable), the company's highest density low-power device to date. Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns, the AS6C3216 is optimized for low-power industrial, telecom, medical, and automotive applications, and it is particularly well-suited for battery backup non-volatile memory. The device released today is offered in the 48-pin, 12-mm by 20-mm TSOP-I package. The AS6C3216 features low power consumption with a typical operating current of 45 mA and standby current of 10 µA. All inputs and outputs are fully TTL-compatible. The AS6C3216 is fabricated using very high-performance, high-reliability CMOS technology, and its current is stable within the operating temperature range of - 40 °C to + 85 °C. The device offers fully static operation and tri-state output, and it features a data retention voltage of 1.2 V minimum. Alliance Memory's legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS6C3216 is the latest in the company's full range of low-power SRAM products, which include devices with densities of 64K, 256K, 1M, 2M, 4M, 8M, 16M, and now, 32M. Samples and production quantities of the AS6C3216 are available now, with lead times of six weeks for large orders.

Alliance Memory Introduces New High-Speed CMOS Synchronous DRAMs With 128-Mb and 256-Mb Densities in 54-Ball TFBGA Package

claire — Sat, 09 Mar 2013 20:24:43 +0000

SAN CARLOS, Calif. — March 9, 2013 — Alliance Memory today extended its 128M and 256M lines of high-speed CMOS synchronous DRAMs (SDRAM) with new devices in a 54-ball 8 mm by 8 mm by 1.2 mm TFBGA package. These 8M x 16 and 16M x 16 SDRAMs feature fast access time from clock down to 4.5 ns at a 5-ns clock and clock rates of 143 MHz. The devices released today are optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications. The SDRAMs operate from a single +3.3-V (± 0.3 V) power supply and are lead (Pb)- and halogen-free. The AS4C8M16S-7BCN and AS4C16M16S-7BCN provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance. Alliance Memory's legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS4C8M16S-7BCN and AS4C16M16S-7BCN are the latest in the company's full line of high-speed SDRAMs, which includes devices with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball BGA packages. Samples and production quantities of the new SDRAMs are available now, with lead times of six weeks for large orders.

Alliance Memory Introduces New High-Speed CMOS Synchronous DRAM With Low 16-Mb Density in 50-Pin TSOP II Package

claire — Wed, 27 Feb 2013 20:28:47 +0000

SAN CARLOS, Calif. — Feb. 27, 2013 — Alliance Memory today introduced a new high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from clock of 5.4 ns at a 7-ns clock cycle, and a fast clock rate of 143 MHz. The device released today is optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and is particularly well-suited to high-performance PC applications. Internally configured as dual banks of 512K word x 16 bits with a synchronous interface, the SDRAM operates from a single +3.3-V (±0.3V) power supply, and is lead (Pb) and halogen free. The AS4C1M16S provides programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. Alliance Memory's legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS4C1M16S is the latest in the company's full line of high-speed SDRAMs, which now includes devices with densities of 16 Mb, 64 Mb, 128 Mb, and 256 Mb. Samples and production quantities of the AS4C1M16S are available now, with lead times of six weeks for large orders.

Alliance Memory Launches New 4M Low-Power CMOS SRAMs Offering 2.7-V to 3.6-V Power Supply in Six Package Options

claire — Thu, 15 Nov 2012 20:31:21 +0000

SAN CARLOS, Calif. — Nov. 15, 2012 — Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 4M IC (512K x 8). Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns in a wide variety of package options, the AS6C4008A is optimized for low-power industrial, telecom, medical, automotive, and networking applications and is particularly well-suited for battery backup nonvolatile memory. The device released today is offered in the 36-ball, 6-mm by 8-mm TFBGA package and in five 32-pin packages, including the 450-mil SOP, 8-mm by 20-mm TSOP-I, 400-mil TSOP-II, 600-mil P-DIP, and 8-mm by 13.4-mm sTSOP. The AS6C4008A features low power consumption with a typical operating current of 30 mA and standby current of 1 µA. All inputs and outputs are fully TTL-compatible. The AS6C4008A is fabricated using very high-performance, high-reliability CMOS technology, and its current is stable within the operating temperature range of - 40 °C to + 85 °C. The device offers fully static operation and tri-state output, and it features a data retention voltage of 1.5 V minimum. Alliance Memory's legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS6C4008A is the latest in the company's full range of low-power SRAM products, which include devices with densities of 64K, 256K, 1M, 2M, 4M, 8M, and 16M. Samples and production quantities of the AS6C4008A are available now, with a lead time of six weeks for large orders. Visit Alliance Memory this week at electronica 2012, booth A5.364.

Alliance Memory Forms Strategic Alliance With China EC Net

claire — Mon, 13 Aug 2012 20:34:19 +0000

SAN CARLOS, Calif. — August 13, 2012 — Alliance Memory today announced a distribution agreement with China EC Net, a strategic partner of Avnet and a powerful e-commerce online semiconductor platform in China. Under the agreement, China EC Net will offer Alliance Memory's entire lineup of SRAMs and DRAMs throughout Greater China. Alliance Memory manufactures a complete line of SRAMs, including 3.3 V and 5 V fast asynchronous SRAMs with speeds from 10 ns to 20 ns, low-power devices with densities from 64 Kb to 32 Mb, and 2.5 V and 3.3 V ZBT/sync pipelined burst (SPB)/sync burst (SB) products. In addition, the company has recently introduced synchronous DRAMs (SDR) with densities of 64 Mb, 128 Mb, and 256 Mb and with commercial, industrial, and automotive temperature ranges. China EC Net will distribute these products from its website, www.eccn.com. "Partnering with China EC Net is a key move in expanding the presence of our legacy memory products in Greater China," said Dan Gilbert, vice president of sales for Alliance Memory. "In addition to having branches in the region's major cities, the company's ‘Power Grid' online community for electronic engineers has more than 630,000 members and receives more than 30 million hits per month. This is tremendous exposure for our solutions, and it will translate into increased sales throughout Greater China." "By offering reliable, drop-in, pin-for-pin compatible legacy parts, Alliance Memory's SRAMs and DRAMs lower costs by eliminating the need for expensive redesigns," said Jack Xu of China EC Net. "We are excited to add these products to our lineup and provide our customers with immediate access to their cost-saving benefits."

Alliance Memory Launches Two New 8M Fast CMOS SRAMs in 44-Pin TSOP-II and 48-Ball TFBGA Packages

claire — Wed, 25 Jul 2012 20:37:42 +0000

SAN CARLOS, Calif. — July 25, 2012 — Alliance Memory is adding to its extensive line of legacy high-speed CMOS SRAMs with two new 8M ICs in the 44-pin, 4-mil TSOP-II and 48-ball, 6-mm by 8-mm TFBGA packages. Featuring fast access times of 10 ns, the AS7C38096A (1M x 8) and AS7C38098A (512K x 16) are pin-for-pin compatible with 4M fast SRAMs, offering twice the density in the same slot. Optimized for commercial, industrial, telecom, and medical applications requiring fast access times, the AS7C38096A and AS7C38098A feature operating currents of 80 mA typical and standby currents of 3 mA typical. The SRAMs operate from a single power supply of 3.3 V, and all inputs and outputs are fully TTL-compatible. The AS7C38096A and AS7C38098A are fabricated using very high-performance, high-reliability CMOS technology, and their current is stable within the operating temperature range of -40 ºC to + 85 ºC. The devices offer fully static operation and tri-state output, and they feature a data retention voltage of 1.5 V minimum. Samples and production quantities of the AS7C38096A and AS7C38098A are available now, with a lead time of six to eight weeks for large orders.

Alliance Memory Announces Distribution Agreement With Poland's Transfer Multisort Elektronik Company (TME)

claire — Mon, 11 Jun 2012 20:48:39 +0000

SAN CARLOS, Calif. — June 11, 2012 — Alliance Memory today announced a distribution agreement with Transfer Multisort Elektronik Company (TME), the largest online and catalogue electronic components distributor in Central and Eastern Europe. Under the agreement, TME will offer Alliance Memory's entire lineup of SRAMs and DRAMs to customers in the European Union, Ukraine, Russia, and Arab countries. Alliance Memory manufactures a complete line of SRAMs, including 3.3 V and 5 V fast asynchronous SRAMs with speeds from 10 ns to 20 ns; low-power devices with densities from 64 Kb to 32 Mb; and 2.5 V and 3.3 V ZBT/Sync pipelined burst (SPB)/Sync burst (SB) products. In addition, the company has recently introduced synchronous DRAMs (SDR) with densities of 64 Mb, 128 Mb, and 256 Mb and with commercial, industrial, and automotive temperature ranges. "Alliance Memory's legacy products offer a number of advantages for our customers, including a rich portfolio with a wide variety of voltages, densities, speeds, and capacities," said Arkadiusz Weglewski, product manager of TME's Semiconductors and Communication Modules division. "All of this is backed by exceptional technical support and quick production times, both of which are important factors for our customers who specialize in industrial solutions for inspection and control." "TME is one of the largest electronic components distributors in Central and Eastern Europe, selling products in more than 30 countries and publishing its catalogue in 16 languages," said Sue Macedo, sales director, Europe, for Alliance Memory. "This partnership will significantly extend the reach of our legacy SRAMs and DRAMs in these regions, providing greater access and quick delivery for our customers." Click to visit TME.

Alliance Memory Announces Distribution Agreement With Avnet Electronics Marketing Asia

claire — Thu, 26 Apr 2012 20:52:17 +0000

SAN CARLOS, Calif. — April, 26, 2012 — Alliance Memory today announced a distribution agreement with Avnet Electronics Marketing Asia, part of the global technology distributor Avnet Inc. (NYSE: AVT). Under the terms of the agreement, Avnet Electronics Marketing, the largest distributor of electronic components in Asia, will offer Alliance Memory's entire lineup of SRAMs and DRAMs to customers in the Asia-Pacific region. Alliance Memory manufactures a complete line of SRAMs, including 3.3 V and 5 V fast asynchronous SRAMs with speeds from 10 ns to 20 ns; low-power devices with densities from 64 Kb to 16 Mb; and 2.5 V and 3.3 V ZBT/Sync pipelined burst (SPB)/Sync burst (SB) products. In addition, company has recently introduced synchronous DRAMs (SDR) with densities of 64 Mb, 128 Mb, and 256 Mb. Beyond distribution of these products, Avnet Electronics Marketing Asia will also provide associated design-chain and supply-chain services. "We are excited that Avnet Electronics Marketing Asia recognizes our legacy SRAMs and DRAMs as valuable additions to their product lineup," said Dan Gilbert, vice president of sales for Alliance Memory. "Through this partnership, we now have a powerful sales team of more than 3,000 people in 51 offices in the Asia-Pacific region alone. With Avnet also distributing our products within the U.S. market, we expect to raise the profile of our solutions significantly in a number of key industries." About Avnet Electronics Marketing Asia Avnet Electronics Marketing Asia is part of Phoenix-based Avnet Inc. (NYSE: AVT), a Fortune 500 company with fiscal 2009 sales exceeding USD16.23 billion. Serving customers in more than 70 countries, Avnet is one of the largest distributors of electronic components, computer products, and embedded technology. Avnet Electronics Marketing has a significant presence in Asia-Pacific, the fastest growing electronics market in the world. With its regional headquarters in Singapore, the company has offices in more than 40 locations in Asia. Avnet Electronics Marketing Asia distributes semiconductors, interconnect, passive, and electromechanical components to serve a wide range of customers, including original equipment manufacturers (OEMs), electronic manufacturing services (EMS) providers, and small- to medium-sized businesses, and provides associated design-chain and supply-chain services. The company's website is located at www.em.avnetasia.com.

Alliance Memory Appoints Jan Ornjager as Regional Manager, Nordic

claire — Mon, 16 Apr 2012 20:55:04 +0000

SAN CARLOS, Calif. — April, 16, 2012 — In a move to strengthen its sales support for the European market, Alliance Memory today announced that the company has named Jan Ornjager as regional manager, Nordic. In his new role, Ornjager will be responsible for business development, and customer and engineering support forthe company's legacy SRAM and DRAM products. Ornjager has 40 years of experience in research development, engineering, sales, and marketing in the electronics industry, and has held a variety of positions from field application engineer to sales manager. Before joining Alliance Memory, he founded Jaleco Nordic, a global supplier of electronic components. Previously, as sales manager for Flextronics Semiconductor, he established the company's sales office in the Nordic region. "Jan has a vast amount of experience in the electronics industry, and when it comes to semiconductors, he has consistently demonstrated strong technical competence in sales, marketing, and business development," said Dan Gilbert, vice president of sales at Alliance Memory. "Jan has worked with Alliance Memory in the past as a sales representative for the Nordic region, and we are happy to welcome him back. We wish him every success in his new role." "It's great to be back with Alliance Memory, and to have this opportunity to build upon existing and new business opportunities for the Nordic region," said Ornjager. "I look forward to working closely with our customers in the region to meet their needs for legacy SRAM and synchronous DRAM products." Ornjager attended Tekniska Realskolan Stockholm and Tekniska Institutet Stockholm. He is based in Stockholm and reports to Sue Macedo, sales director, Europe.

Alliance Memory Introduces Three New CMOS Synchronous DRAMs (SDRAM) Rated for the Industrial Temperature Range of –40°C to +85°C

claire — Mon, 26 Mar 2012 21:02:42 +0000

SAN CARLOS, Calif. — March 26, 2012 — Alliance Memory Inc., a worldwide provider of legacy memory ICs for the communications, computing, medical, industrial, and consumer markets, today introduced three new high-speed CMOS synchronous DRAMs (SDRAM) rated for the industrial temperature range of –40°C to +85°C. The SDRs released today offer densities of 64 Mb (AS4C4M16S-6TIN), 128 Mb (AS4C8M16S-6TIN), and 256 Mb (AS4C16M16S-6TIN). The devices are optimized for high-temperature industrial applications, in addition to high-performance PC, communications, medical, and consumer products requiring high memory bandwidth. Packaged in a 54-pin, 400-mil plastic TSOP II, the new AS4C4M16S-6TIN, AS4C8M16S-6TIN, and AS4C16M16S-6TIN offer a fast access time from clock down to 4.5 ns at a 5-ns clock cycle, and clock rates of 166 MHz. Internally configured as four banks of 1M, 2M, or 4M word x 16 bits with a synchronous interface, the SDRs operate from a single +3.3-V (± 0.3V) power supply and are lead (Pb)- and halogen-free. Alliance Memory's SDRs provide programmable read or write burst lengths of 1, 2, 4, 8, or full-page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Device Specification Table

Part Number	AS4C4M16S-6TIN	AS4C8M16S-6TIN	AS4C16M16S-6TIN
Density	64 Mv	128 Mb	256 Mb
Configuration	4M x 16 bit	8M x 16 bit	16M x 16 bit
Clock cycle (ns)	6	6	6
Max. access time from clock (ns)	5.4/5.4	5/5.4	4.5/5.4/5.4
Clock rate (MHz)	166	166	166

Samples and production quantities of the new SDRs are available now with lead times of six to eight weeks.

ISO 9001-2008 Recertification Announcement

claire — Wed, 29 Feb 2012 21:12:16 +0000

SAN CARLOS, Calif. — Feb. 29, 2012 — Legacy SRAM and DRAM manufacturer Alliance Memory today announced achievement of ISO 9001:2008 recertification status for its facilities in California. The company's facilities have been ISO 9001 certified since 2009. ISO 9001:2008 (the most recent version of the certification standard) is internationally recognized for promoting a process approach to improving the effectiveness of a Quality Management System, enhancing customer satisfaction, and meeting customer requirements. Certification indicates independent verification that Alliance Memory meets the requirements of the standard. The assessments look at the process that a company uses to ensure quality and continuous improvement. The Alliance Memory certificate (#QMS-0266b) was issued by Intertek, one of the most recognized and reputable ISO assessment providers in the world. Intertek granted the registration upon Alliance Memory's successful completion of a series of quality system assessments applying the Plan - Do - Check - Act, or PDCA, cycle approach. Alliance Memory was formed in 2006 to supply legacy memory ICs to the industrial and communications market space. Its initial products were the fast asynchronous SRAM product line acquired in its entirety from Alliance Semiconductor. The company has since expanded its product lines to include synchronous DRAMs (SDRs) and has acquired the low-power asynchronous SRAM line of ZMD AG. The company has continued the relationships with all of the manufacturing partners that were well established with Alliance Semiconductor. "ISO 9001:2008 is a customer-centric program, and at Alliance Memory the goals and procedures of our quality program are totally geared to customer satisfaction and to making it easy to do business with us," said Richard G. Ward, director of quality and logistics at Alliance Memory. "Quality is not just about the product, but about everything that everyone in the company does." Visit our Quality page to learn more.

Alliance Memory Launches New 4M Fast SRAM in 48-Ball FBGA Package

claire — Tue, 10 Jan 2012 21:16:49 +0000

SAN CARLOS, Calif. — Jan. 10, 2012 — Alliance Memory is adding to its extensive line of legacy fast asynchronous SRAMs with a new 4M (256K x 16) IC in the 48-ball FBGA package. The new AS7C34098A-10BIN can be used as a drop-in replacement for devices from several SRAM manufacturers. Designed for memory applications where fast data access, low power, and simple interfacing are essential, the AS7C34098A-10BIN will help to save space in industrial and communications systems with its 8 mm by 10 mm by 1.20 mm FBGA package. For mainstream digital signal processors (DSP) and microcontrollers, Alliance Memory's legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS7C34098A-10BIN is the latest in the company's full range of fast asynchronous SRAM products, which include devices with densities of 64K, 256K, 512K, 1M, 2M, and 4M. Samples and production quantities of the AS7C34098A-10BIN are available now, with lead times of four to six weeks for production quantities.

Alliance Memory to Showcase Legacy SDRAMs at electronica China 2016

claire — Mon, 29 Feb 2016 19:21:37 +0000

SAN CARLOS, Calif. — Feb. 29, 2016 — Alliance Memory today announced its technology lineup for electronica China, taking place March 15-17 at the Shanghai New International Expo Centre. In booth E2.2127, the company will highlight its latest synchronous DRAMs (SDRAM), including high-speed CMOS double data rate (DDR1), low-power mobile DDR1 (MDDR1), DDR2, and DDR3 SDRAMs in a wide range of package options, in addition to components recently discontinued by Micron Technology. At electronica China, Alliance Memory will highlight SDRAMs with densities from 16 Mb to 512 Mb, available in a variety of TSOP, FBGA, and TFBGA packages and with commercial (0 °C to +70 °C), industrial (-40 °C to +85 °C), and automotive (-40 °C to +105 °C) temperature ranges. Products on display will include the company’s legacy Micron Technology 512 Mb SDRAMs in the 54-pin TSOP II package. PC100- and PC133-compliant, the MT48LC32M16A2P-75: C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C operate from a single +3.3 V (±0.3 V) power supply. Alliance Memory will showcase DDR1 SDRAMs with densities of 64 Mb, 128 Mb, 512 Mb, and 1 Gb in the 66-pin TSOP II package with a 0.65-mm pitch, in addition to 60-ball TFBGA and 144-ball FBGA options. The devices feature fast clock rates of 200 MHz and 166 MHz and operate from a single +2.5-V (±0.2 V) power supply. Highlighted DDR2 SDRAMs will offer densities from 256 Mb to 2 Gb in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages. The devices operate from a single +1.8-V (±0.1 V) power supply, and they will include Alliance Memory’s new 2-Gb AS4C128M16D2 in the 84-ball FBGA, which is available from a very limited number of suppliers. For newer-generation microprocessors, Alliance Memory will highlight DDR3 and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, 4 Gb, and 8 Gb in 78-ball 9-mm by 10.5-mm by 1.2-mm and 96-ball 9-mm by 13-mm by 1.2-mm FBGA packages. The devices offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. The DDR3 SDRAMs operate from a single +1.5-V (±0.075 V) power supply, while the DDR3L SDRAMs operate from a single +1.35-V power supply. Also on display will be low-power MDDR1 SDRAMs in densities from 256 Mb to 2 G that operate from a single +1.8-V power supply, feature clock frequencies of 166 MHz and 200 MHz, and offer data rates of 333 Mbps/pin and 400 Mbps/pin. The devices are available in 60-ball and 90-ball FPBGA packages and commercial (-25 °C to +85 °C), extended (-30 °C to +85 °C), and industrial (-40 °C to +85 °C) temperature ranges. Alliance Memory’s SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources. Founded in 2002, electronica China is one of the leading platforms for electronic components, systems, and applications. More information on the show is available at http://electronica-china.com/.

Alliance Memory Launches New Monolithic High-Speed, Low-Voltage CMOS DDR3L SDRAM With 8-Gb Density in 96-Ball FBGA Package

claire — Tue, 14 Jul 2015 19:27:02 +0000

SAN CARLOS, Calif. — July 14, 2015 — Alliance Memory today introduced a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gb density in the 96-ball, 9-mm by 14-mm, lead (Pb)-free FBGA package. Featuring state-of-the art silicon provided by Micron Technology, Inc., the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. With minimal die shrinks, the single-die 8-Gb DDR3L SDRAM released today provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications — eliminating the need for costly redesigns and part requalification. This 8-Gb DDR3 is a logical choice for customers that require increased memory yet face board space constraints. The AS4C512M16D3L operates from a single +1.35-V power supply and is available with a commercial temperature range of 0 °C to +95 °C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40 °C to +95 °C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16 bits. The DDR3L SDRAM offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance. Samples of the new AS4C512M16D3L are available now, with lead times of six to eight weeks for production quantities.

Alliance Memory Introduces New High-Speed CMOS Double Data Rate 2 (DDR2) Synchronous DRAMs With 2-Gb Density in 84-Ball FBGA Package

claire — Thu, 25 Jun 2015 19:34:15 +0000

SAN CARLOS, Calif. — June 25, 2015 — Alliance Memory today broadens its lineup of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) with a new device featuring high 2-Gb density in the 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA package. Available from a very limited number of suppliers, the AS4C128M16D2 is offered in commercial (0 °C to +85 °C) and industrial (-40 °C to + 95 °C) temperature ranges. Hard to find until now, the AS4C128M16D2 provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions in automotive, industrial, consumer, networking, and medical products requiring high memory bandwidth. The device is internally configured as eight banks of 16M x 16 bits. The DDR2 SDRAM offers a synchronous interface, operates from a single + 1.8-V (± 0.1 V) power supply, and is RoHS-compliant. The AS4C128M16D2 features a fast clock rate of 400 MHz and a data rate of 800 Mbps/pin. The DDR2 SDRAM provides programmable read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance. With the addition of the AS4C128M16D2, Alliance Memory now offers an extensive lineup of DDR2 SDRAMs featuring densities of 512 Mb, 1 Gb, and 2 Gb.

Alliance Memory to Offer Legacy Micron Technology 512M SDRAMs With Original Part Numbers Through 2017

claire — Wed, 20 May 2015 19:37:45 +0000

SAN CARLOS, Calif. — May 20, 2015 — Alliance Memory today announced that its 32M x 16 MT48LC32M16A2P-75: C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), 64M x 8 MT48LC64M8A2P-75:C (commercial temperature), and 64M x 8 MT48LC64M8A2P-75 IT:C (industrial temperature) 512M synchronous DRAM (SDRAM) devices, which the company recently acquired from Micron Technology, will be available with their original Micron part numbers into 2017.

"By continuing to offer the Micron SDRAMs with their original part numbers, we ensure that our customers won't have to do a requalification of the parts for nearly two to three years," said David Bagby, president of Alliance Memory. In addition to making this commitment, Alliance has already begun its own design, which will be ready in 2016. When this pin-to-pin-compatible part is ready, Micron customers will be able to make an easy transition to the Alliance part, experiencing no gap in product availability. The MT48LC32M16A2P-75:C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and they are particularly well-suited to high-performance PC applications. Offered in a 54-pin TSOP II package and available with commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges, the devices operate from a single +3.3 V (±0.3 V) power supply and are lead (Pb)- and halogen-free. PC100- and PC133-compliant, the devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. Samples and production quantities of the MT48LC32M16A2P-75, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are available now, with lead times of six to eight weeks for large orders.

Alliance Memory Announces ISO 9001:2008 Recertification

claire — Wed, 15 Apr 2015 19:42:41 +0000

SAN CARLOS, Calif. — April 15, 2015 — Alliance Memory today announced that its San Carlos, California, facilities have received ISO 9001:2008 recertification. The company's facilities have been ISO 9001-certified since 2009. ISO 9001:2008, the most recent version of the certification standard, is internationally recognized for promoting a process approach to improving the effectiveness of a quality management system, enhancing customer satisfaction, and meeting customer requirements. Certification indicates independent verification that Alliance Memory meets the requirements of the standard. The assessments look at the process that a company uses to ensure quality and continuous improvement. The Alliance Memory certificate (#QMS-0266b-01) was issued by Intertek, one of the most recognized and reputable ISO assessment providers in the world. Intertek granted the registration upon Alliance Memory's successful completion of a series of quality system assessments applying the Plan - Do - Check - Act, or PDCA, cycle approach. Alliance Memory is certified for distribution and marketing activities supporting legacy memory products for the communications, computing, industrial, and consumer markets. Click for details about the Alliance Memory quality program.

Alliance Memory Introduces New High-Speed CMOS DDR SDRAMs With 256 Mb, 512 Mb, and 1 Gb Densities in 60-Ball TFBGA and 66-Pin TSOP II Packages

claire — Thu, 02 Apr 2015 19:46:35 +0000

SAN CARLOS, Calif. — April 2, 2015 — Alliance Memory today introduced new high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 256 Mb (AS4C32M8D1), 512 Mb (AS4C64M8D1), and 1 Gb (AS4C64M16D1) in the 60-ball 8-mm by 13-mm by 1.2 mm TFBGA package and the 66-pin TSOP II package with a 0.65-mm pin pitch. The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 are internally configured as four banks of 32M word x 8 bits, 64M word x 8 bits, and 64M word x 16 bits, respectively. The DDR SDRAMs offer a synchronous interface, operate from a single +2.5-V (± 0.2 V) power supply, and are lead (Pb)- and halogen-free. The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 feature fast clock rates of 200 MHz and 166 MHz and are offered in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. With the addition of the AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 to its portfolio, Alliance Memory now offers the most extensive lineup of DDR SDRAMs in the industry, featuring densities of 64 Mb, 128 Mb, 256 Mb, 512 Mb, and 1 Gb. For Alliance Memory’s customers, the devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn’t perform die shrinks, which frees up engineering resources.

Part #	Density	Configuration	Clock Rate	Package	Temp. Range
AS4C4M16D1A-5TCN	64 Mb	4M x 16 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C4M16D1A-5TIN	64 Mb	4M x 16 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C8M16D1A-5TCN	128 Mb	8M x 16 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C8M16D1A-5TIN	128 Mb	8M x 16 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C16M16D1A-5TCN	256 Mb	16M x 16 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C16M16D1A-5TIN	256 Mb	16M x 16 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C16M16D1-5BCN	256 Mb	16M x 16 bit	200 MHz	60-ball TFBGA	0 °C to +70 °C
AS4C16M16D1-5BIN	256 Mb	16M x 16 bit	200 MHz	60-ball TFBGA	-40 °C to +85 °C
AS4C32M8D1-5TCN;	256 Mb	32M x 8 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C32M8D1-5TIN	256 Mb	32M x 8 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C32M16D1A-5TCN	512 Mb	32M x 16 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C32M16D1A-5TIN	512 Mb	32M x 16 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C32M16D1-5BCN	512 Mb	32M x 16 bit	200 MHz	60-ball TFBGA	0 °C to +70 °C
AS4C32M16D1-5BIN	512 Mb	32M x 16 bit	200 MHz	60-ball TFBGA	-40 °C to +85 °C
AS4C64M8D1-5TCN	512 Mb	64M x 8 bit	200 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C64M8D1-5TIN	512 Mb	64M x 8 bit	200 MHz	66-pin TSOP II	-40 °C to +85 °C
AS4C64M8D1-5BCN	512 Mb	64M x 8 bit	200 MHz	60-ball TFBGA	0 °C to +70 °C
AS4C64M8D1-5BIN	512 Mb	64M x 8 bit	200 MHz	60-ball TFBGA	-40 °C to +85 °C
AS4C64M16D1-6TCN	1 Gb	64M x 16 bit	166 MHz	66-pin TSOP II	0 °C to +70 °C
AS4C64M16D1-6TIN	1 Gb	64M x 16 bit	166 MHz	66-pin TSOP II	-40 °C to +85 °C

Samples and production quantities of the new DDR SDRAMs are available now, with lead times of six to eight weeks for large orders.

Alliance Memory and Digi-Key Team Up to Supply Market With Legacy Micron Technology 512M SDRAMs

claire — Mon, 02 Mar 2015 19:57:00 +0000

SAN CARLOS, Calif. — March 2, 2015 — Alliance Memory recently announced that its 32M x 16 MT48LC32M16A2P-75: C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), 64M x 8 MT48LC64M8A2P-75:C (commercial temperature), and 64M x 8 MT48LC64M8A2P-75 IT:C (industrial temperature) 512M synchronous DRAM (SDRAM) devices — which the company recently acquired from Micron Technology the rights and license to supply — are now available from Digi-Key, a leading online electronic component distributor. In addition, Digi-Key will be offering Alliance-marked (M) 512M SDRAMs manufactured by Micron, which are 100 percent identical to the Micron parts. "We are proud to collaborate with Digi-Key in extending the life cycle of these Micron SDRAMs as they reach their EOL," said David Bagby, president and CEO of Alliance Memory. "With a global reputation for outstanding support and fast shipping, Digi-Key's broad reach will be invaluable in ensuring that the market continues to have quick and convenient access to these devices." "We applaud both Alliance Memory and Micron in the steps they have taken to provide the market with a continued supply of these EOL parts," said David Stein, vice president global semiconductors at Digi-Key. "We are looking forward to doing our part and have added the devices to our wide range of Alliance Memory products, which have proven to be instrumental in allowing our customers to lower costs by eliminating redesigns."

Micron Technology Part Number	Alliance Memory Part Number	Density	Temperature Rating
MT48LC32M16A2P-75:C	AS4C32M16SM-7TCN	32M x 16	0 °C to +70 °C, commercial
MT48LC32M16A2P-75 IT:C	AS4C32M16SM-7TIN	32M x 16	-40 °C to +85 °C, industrial
MT48LC64M8A2P-75:C	Only will offer Micron part number	64M x 8	0 °C to +70 °C, commercial
MT48LC64M8A2P-75 IT:C	Only will offer Micron part number	64M x 8	-40 °C to +85 °C, industrial

Devices with the Alliance Memory part numbers are 100 percent equivalent to the corresponding Micron part number, and each device has been manufactured to the same wafer/assembly and test materials and process as the corresponding Micron part number, with only the top-side marking being different. Micron manufactures these devices exclusively for Alliance Memory. The MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN), MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN), MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C is optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and they are particularly well-suited to high-performance PC applications. Offered in a 54-pin TSOP II package, the devices operate from a single +3.3 V (±0.3 V) power supply and are lead(Pb)- and halogen-free. PC100- and PC133-compliant, the devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. Samples and production quantities of the MT48LC32M16A2P-75 (AS4C32M16SM-7TCN), MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN), MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are available now, with lead times of six to eight weeks for large orders. More information on Digi-Key is available at www.digikey.com.

Alliance Memory Appoints Gregory Miller as Director of Sales

claire — Tue, 18 Nov 2014 20:04:34 +0000

SAN CARLOS, Calif. — November 18, 2014 — Alliance Memory today announced that Gregory Miller has joined the company as its director of sales. In his new role, Miller will lead sales efforts for the company and serve as the worldwide sales account manager for Alliance Memory's customer Jabil — a leading supply chain management and electronic manufacturing partner — with an emphasis on the Florida market. For 30 years, Miller has contributed to the success of major industry leaders. He comes to Alliance Memory from BFG Systems, where as executive consultant and general manager he led the development of the company's manufacturing and supply chain strategy. In addition to holding key positions at Rolls Royce, Celestica, Eaton Corp., and Intel, Miller served for eight years at Jabil in a number of capacities, including director of global business unit materials and director of global commodity management. "Greg has a proven track record of success in the semiconductor industry, and a tremendous amount of direct experience with Jabil," said David Bagby, president and CEO of Alliance Memory. "With Greg on the Alliance Memory team, we are well-positioned to continue our own growth and provide the ultimate service and support to this key customer." "Alliance Memory is built on a solid legacy IC foundation and is moving in the right direction with its recent product introductions, including mobile low-power double data rate (DDR), DDR2, and DDR3 SDRAMs," said Miller. "In addition, the company takes great pride in its response time for customers and excellent service and support. It's an exciting time to join Alliance Memory, and I look forward to contributing to its continued success." Miller holds a Bachelor of Science degree in business management from Northern Arizona University. He is based in Palm Harbor, Florida, and reports to Bagby.

Alliance Memory Partners With Micron Technology to Extend 512M SDRAM Product Life Cycle

claire — Mon, 20 Oct 2014 20:07:25 +0000

SAN CARLOS, Calif. — October 20, 2014 — Alliance Memory today announced it has partnered with Micron Technology to supply and extend availability of support for three 512M synchronous DRAM (SDRAM) devices that Micron discontinued with Micron PCN #30995 (last time buy: Feb. 28, 2014; last time ship: Oct. 31, 2015). Alliance Memory will be offering Micron's 32M x 16 MT48LC32M16A2P-75:C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), and 64M x 8 MT48LC64M8A2P-75:C. In addition to the Micron part numbers Alliance Memory will also offer Alliance-marked 512M SDRAMs manufactured by Micron which will be 100% identical to the Micron parts.

Micron Part #	Alliance Part #	Density	Temperature Rating
MT48LC32M16A2P-75:C	AS4C32M16SM-7TCN	32M x 16	0°C to +70 °C, commercial
MT48LC32M16A2P-75 IT:C	AS4C32M16SM-7TIN	32M x 16	-40°C to +85 °C, industrial
MT48LC64M8A2P-75:C	Only will offer Micron part number	64M X 8	0°C to +70 °C, commercial

Devices with the Alliance Memory part numbers are 100% equivalent to the corresponding Micron part number, and each device has been manufactured to the same wafer/assembly and test materials and process as the corresponding Micron part number, with only the top-side marking being different. Micron will manufacture these devices. "We thank Micron Technology for working proactively with Alliance Memory to ensure that there is no disruption in the supply chain for its customers as these devices reach their EOL," said David Bagby, president of Alliance Memory. "Micron realized that the market depended upon them heavily for this key device and has partnered with us to make sure their customers can still be supported without costly redesigns." "Micron is excited to partner with Alliance Memory to provide extended support of 512Mb SDR. We are committed to our customers' success and to providing extended lifetimes on legacy products to meet and exceed our customers' needs. Our partnership with Alliance Memory on 512Mb SDR is the execution of this commitment," said Matthias Buchner, senior director of segment and product marketing for Micron's compute and networking business unit. The MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN), MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN), and MT48LC64M8A2P-75:C are optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and they are particularly well-suited to high-performance PC applications. Offered in a 54-pin TSOP II package, the devices operate from a single +3.3 V (±0.3 V) power supply and are lead (Pb)- and halogen-free. PC100- and PC133-compliant, the devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. Samples and production quantities of the MT48LC32M16A2P-75 (AS4C32M16SM-7TCN), MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN), and MT48LC64M8A2P-75:C are available now, with lead times of six to eight weeks for large orders. # # # About Alliance Memory Inc. Alliance Memory is a worldwide provider of legacy memory products for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company's product range includes a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3 V synchronous DRAMs (SDR), mobile DDRs, and 2.5 V single (DDR1), 1.8 V double (DDR2), and 1.5 V & 1.35 V triple rate (DDR3) synchronous DRAMs. Depending on the family, these products are available with commercial, industrial, and automotive operating temperature ranges and with densities from 64K to 4G. Alliance Memory is a privately held company with headquarters in San Carlos, Calif., and regional offices in the United Kingdom, France, Italy, Sweden, Bulgaria, China, and Southeast Asia. More information about Alliance Memory is available online at www.alliancememory.com. About Micron Technology Inc. Micron Technology Inc. is a global leader in advanced semiconductor systems. Micron's broad portfolio of high-performance memory technologies — including DRAM, NAND and NOR Flash — is the basis for solid state drives, modules, multichip packages, and other system solutions. Backed by more than 35 years of technology leadership, Micron's memory solutions enable the world's most innovative computing, consumer, enterprise storage, networking, mobile, embedded, and automotive applications. Micron's common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology Inc., visit www.micron.com.

Alliance Memory Moves to Larger Facility to Accommodate Growth

claire — Mon, 06 Oct 2014 20:19:57 +0000

SAN CARLOS, Calif. — October 6, 2014 — To accommodate the recent introduction of several new product lines, Alliance Memory today announced that the company has moved into a new building with twice the warehouse and office space. Effective immediately, the new Alliance Memory address is 511 Taylor Way, San Carlos, California, 94070. "Our previous facility has served us well for the past five years, but with our rapid expansion, we were simply running out of warehouse space," said Kim Bagby, CFO at Alliance Memory. "The new location will accommodate us now and allow for future growth. Furthermore, we were able to remain in San Carlos, which keeps us in close proximity to Silicon Valley." Recent introductions to the Alliance Memory product lineup include high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM); DDR3 SDRAMs; low-voltage DDR3L SDRAMs; and mobile DDR SDRAMs designed to increase efficiency and extend battery life in compact portable devices. Alliance Memory's products provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, consumer, commercial, medical, telecom, and networking products, eliminating the need for costly redesigns and part requalification.

Alliance Memory Strengthens Customer Support Team, Appoints Winner Chen as Field Application Engineer

claire — Mon, 22 Sep 2014 20:23:13 +0000

SAN CARLOS, Calif. — September 22, 2014 — Alliance Memory today announced that the company has bolstered its customer support team with the addition of Winner Chen as field application engineer. Serving as a valuable resource for designers utilizing Alliance Memory’s legacy ICs, Mr. Chen will assist in solving technical issues such as configuring timing parameters on software and connection diagrams and PCB layouts on hardware while fielding requests for IBIS models, information on ESD levels, and more. Mr. Chen comes to Alliance Memory from Jiangsu Mesh Communication Electronic Co. Ltd., where as director of the central node platform he was instrumental in the creation of three generations of wireless ad hoc network communication products. Previously, for Shenzhen B.C. Electronic Co., Ltd., he developed palmtop software and electronic energy meters for use in a variety of environments. "Customer support has always been a top priority for Alliance Memory, and we pride ourselves on our friendly, knowledgeable staff," said David Bagby, president and CEO of Alliance Memory. "With his considerable development experience in a wide range of electronic products, Winner makes a great addition to the team as our new field application engineer. We’re excited to have him backing up our products and providing invaluable expertise to our customers." "From my own experience in electronics design, I know that strong technical support from suppliers can be vital to the success of a project," said Chen. "I’m looking forward to using what I’ve learned in my career to help our customers overcome the challenges in their applications and get their products to market faster, all while avoiding costly redesigns by using our legacy ICs." Mr. Chen holds a bachelor’s degree in optical information science and technology from Guilin University of Electronic Technology. He is based in Shenzhen City, China, and reports to Bagby.

Alliance Memory Launches New Low-Power, High-Speed Mobile CMOS DDR SDRAMs With 256-Mb, 512-Mb, 1-Gb, and 2-Gb Densities

claire — Tue, 16 Sep 2014 20:27:41 +0000

SAN CARLOS, Calif. — September 16, 2014 — Alliance Memory today introduced a new line of high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256-Mb, 512-Mb, 1-Gb, and 2-Gb devices are offered in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages. With each new product generation, designers of today's portable devices are tasked with providing more functionality in less space while using less power. To meet this demand, the devices released today feature auto temperature compensated self-refresh (ATCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn't required. As the number of mobile DDR SDRAM suppliers continues to decrease, Alliance Memory is offering designers a new source for the low power consumption they require. The company's AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1, and AS4C64M32MD1 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking devices. With their double data rate architecture, the mobile DDR SDRAMs offer high-speed operation with clock rates of 166 MHz and 200 MHz. For optimal functionality in extreme environments, all devices are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges. The mobile DDR SDRAMs offer fully synchronous operation and provide programmable read or write burst lengths of 2, 4, 8, or 16. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.

Part #	Density	Configuration	Clock Rate	Package	Temp. Range
AS4C16M16MD1-6BCN	256M	16M X 16 bit	166 MHz	60-ball FPBGA	-30 °C to +85 °C
AS4C16M16MD1-6BIN	256M	16M X 16 bit	166 MHz	60-ball FPBGA	-40 °C to +85 °C
AS4C32M16MD1-5BCN	512M	32M X 16 bit	200 MHz	60-ball FPBGA	-30 °C to +85 °C
AS4C32M16MD1-5BIN	512M	32M X 16 bit	200 MHz	60-ball FPBGA	-40 °C to +85 °C
AS4C16M32MD1-5BCN	512M	16M X 32 bit	200 MHz	90-ball FPBGA	-30 °C to +85 °C
AS4C16M32MD1-5BIN	512M	16M X 32 bit	200 MHz	90-ball FPBGA	-40 °C to +85 °C
AS4C64M16MD1-6BCN	1 Gb	64M X 16 bit	166 MHz	60-ball FPBGA	-30 °C to +85 °C
AS4C64M16MD1-6BIN	1 Gb	64M X 16 bit	166 MHz	60-ball FPBGA	-40 °C to +85 °C
AS4C32M32MD1-5BCN	1 Gb	32M X 32 bit	200 MHz	90-ball FPBGA	-30 °C to +85 °C
AS4C32M32MD1-5BIN	1 Gb	32M X 32 bit	200 MHz	90-ball FPBGA	-40 °C to +85 °C
AS4C64M32MD1-5BCN	2 Gb	64M X 32 bit	200 MHz	90-ball FPBGA	-30 °C to +85 °C
AS4C64M32MD1-5BIN	2 Gb	64M X 32 bit	200 MHz	90-ball FPBGA	-40 °C to +85 °C

Samples of the new mobile DDR SDRAMs are available now, with lead times of six to eight weeks for production quantities.

Alliance Memory lanza las nuevas Mobile CMOS DDR SDRAMs de baja potencia y alta velocidad con densidades de 256 MB, 512 MB, 1 GB y 2 GB

claire — Tue, 16 Sep 2014 20:39:02 +0000

SAN CARLOS, Calif. — September 16, 2014 — Alliance Memory ha presentado hoy una nueva línea de DRAMs mobile CMOS DDR de alta velocidad (DDR SDRAM) diseñadas para aumentar la eficiencia y prolongar la vida útil de la batería en dispositivos portátiles compactos. Con un bajo consumo de energía de 1,7 V a 1,95 V y una serie de características de ahorro de energía, los dispositivos de 256 MB, 512 MB, 1 GB y 2 GB se ofrecen en encapsulados 8 mm por 9 mm 60-ball y de 8 mm por 13 mm 90-ball FPBGA. Con cada nueva generación de productos, los diseñadores de dispositivos portátiles de hoy en día tienen la tarea de proporcionar una mayor funcionalidad en menos espacio con el uso de menos energía. Para satisfacer esta demanda, los dispositivos presentados cuentan ATCSR (Auto Temperature Compensated Self-Refresh) para minimizar el consumo de energía a temperaturas ambientales bajas. Además, su característica PASR (Partial Array Self-Refresh) reduce la potencia con sólo actualizar los datos críticos, mientras que el modo profundo de bajo consumo (DPD) proporciona un estado de potencia ultra-baja cuando no se requiere la retención de datos. A medida que el número de proveedores de SDRAM DDR móviles continúa disminuyendo, Alliance Memory ofrece a los diseñadores una nueva fuente para sus necesidades de bajo consumo de energía. Las AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1 y AS4C64M32MD1 de la empresa proporcionan drop-in fiable, repuestos compatibles pin-a-pin, para una serie de soluciones similares de gran ancho de banda y de aplicaciones de sistemas de alto rendimiento de memoria en electrónica de consumo portátil, equipos médicos y dispositivos de red. Con su arquitectura de doble velocidad de datos, las SDRAM DDR móviles ofrecen funcionamiento a alta velocidad con velocidades de reloj de 166 MHz y 200 MHz. Para un funcionamiento óptimo en ambientes extremos, todos los dispositivos están disponibles en rangos de temperatura extendidos (-30°C a +85°C) e industrial (-40°C a +85°C). Los SDRAM DDR móviles ofrecen un funcionamiento totalmente sincrónico y proporcionan lectura programable o longitudes de ráfaga de escritura de 2, 4, 8, o 16. Una función de pre-carga ofrece una fila de precarga auto-programada iniciada al final de la secuencia de ráfaga. Funciones de actualización fáciles de usar incluyen auto o self-refresh. Compatible con RoHS, los dispositivos están libres de plomo (Pb) - y halógenos.

Referencia	Densidad	Configu- ración	Velocidad	Encap- sulado	Rango de temp.
AS4C16M16MD1-6BCN	256M	16M X 16 bit	166 MHz	60-ball FPBGA	-30 °C to +85 °C
AS4C16M16MD1-6BIN	256M	16M X 16 bit	166 MHz	60-ball FPBGA	-40 °C to +85 °C
AS4C32M16MD1-5BCN	512M	32M X 16 bit	200 MHz	60-ball FPBGA	-30 °C to +85 °C
AS4C32M16MD1-5BIN	512M	32M X 16 bit	200 MHz	60-ball FPBGA	-40 °C to +85 °C
AS4C16M32MD1-5BCN	512M	16M X 32 bit	200 MHz	90-ball FPBGA	-30 °C to +85 °C
AS4C16M32MD1-5BIN	512M	16M X 32 bit	200 MHz	90-ball FPBGA	-40 °C to +85 °C
AS4C64M16MD1-6BCN	1 Gb	64M X 16 bit	166 MHz	60-ball FPBGA	-30 °C to +85 °C
AS4C64M16MD1-6BIN	1 Gb	64M X 16 bit	166 MHz	60-ball FPBGA	-40 °C to +85 °C
AS4C32M32MD1-5BCN	1 Gb	32M X 32 bit	200 MHz	90-ball FPBGA	-30 °C to +85 °C
AS4C32M32MD1-5BIN	1 Gb	32M X 32 bit	200 MHz	90-ball FPBGA	-40 °C to +85 °C
AS4C64M32MD1-5BCN	2 Gb	64M X 32 bit	200 MHz	90-ball FPBGA	-30 °C to +85 °C
AS4C64M32MD1-5BIN	2 Gb	64M X 32 bit	200 MHz	90-ball FPBGA	-40 °C to +85 °C

Las muestras de los nuevos SDRAM DDR móviles están disponibles ahora, con tiempos de entrega de seis a ocho semanas para cantidades de producción.

Alliance Memory Appoints Ivailo Dimitrov as Salesperson in Bulgaria

claire — Mon, 08 Sep 2014 20:47:03 +0000

SAN CARLOS, Calif. — September 8, 2014 — Alliance Memory today announced that the company has strengthened its sales force in southeastern Europe with the addition of Ivailo Dimitrov as salesperson in Bulgaria. In his new role, Mr. Dimitrov will be responsible for providing sales support to Alliance Memory's rapidly expanding customer base in the country. Mr. Dimitrov comes to Alliance Memory from Rutronik GmbH, where he served as field sales and applications engineer for the distributor's wide range of electronic components, including legacy memory products from Alliance Memory. Previously, he has held the positions of sales manager and service manager at Eurocode Ltd., UNION Lab Ltd., and ANTISEL Selidis Bros Bulgaria Ltd. "From scientific instrumentation to consumer goods, Ivailo has extensive knowledge of a wide range of markets in Bulgaria and their need for legacy memory devices," said David Bagby, president and CEO of Alliance Memory. "As we continue to grow in southeastern Europe, he will be instrumental in driving sales while providing an invaluable resource to our customers." "There is high demand in Bulgaria for pin-for-pin compatible legacy memory devices that help manufacturers avoid the high cost of redesigns," said Mr. Dimitrov. "I'm looking forward to meeting this need with Alliance Memory's SRAMs and DRAMs, while helping the company continue its success in the country." Mr. Dimitrov holds a bachelor of engineering degree in micro- and power electronics from the Technical University of Sofia. He is fluent in Bulgarian, English, and Russian, and proficient in German. Mr. Dimitrov is based in Bulgaria and reports to Mr. Bagby.

Alliance Memory Launches New High-Speed CMOS DDR3 SDRAMs With 1-Gb, 2-Gb, and 4-Gb Densities in 78-Ball and 96-Ball FBGA Packages

claire — Thu, 26 Jun 2014 20:51:12 +0000

SAN CARLOS, Calif. — June 26, 2014 — Alliance Memory today introduced a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball 9 mm by 10.5 mm by 1.2 mm and 96-ball 9 mm by 13 mm by 1.2 mm FBGA packages. With their double data rate architecture, the devices released today offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. With minimal die shrinks, the company’s DDR3 (1.5 V) and DDR3L (1.35 V) SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, consumer, and telecom applications — eliminating the need for costly redesigns and part requalification. The AS4C64M16D3, AS4C128M8D3, AS4C128M16D3, AS4C256M8D3, AS4C256M16D3, and AS4C512M8D3 DDR3 SDRAMs operate from a single +1.5-V (±0.075 V) power supply, while the AS4C64M16D3L, AS4C128M8D3L, AS4C128M16D3L, AS4C256M8D3L, AS4C256M16D3L, and AS4C512M8D3L DDR3L SDRAMs operate from a single +1.35-V power supply. The devices are offered with a commercial temperature range of 0 °C to +95 °C and an industrial temperature range of -40 °C to +95 °C. The DDR3 and DDR3L SDRAMs are internally configured as eight banks of 64M, 128M, 256M, and 512M x 8 bits and/or 16 bits. The devices offer fully synchronous operation and provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance. RoHS-compliant, the devices are lead (Pb)- and halogen-free.

Part #	Density	Power supply	Configuration	Temp. range	FBGA Pkg.
AS4C64M16D3-12BCN	1 Gb	+1.5 V	64M x 16 bit	0 °C to +95 °C	96-ball
AS4C64M16D3-12BIN	1 Gb	+1.5 V	64M x 16 bit	-40 °C to +95 °C	96-ball
AS4C128M8D3-12BCN	1 Gb	+1.5 V	128M x 8 bit	0 °C to +95 °C	78-ball
AS4C128M8D3-12BIN	1 Gb	+1.5 V	128M x 8 bit	-40 °C to +95 °C	78-ball
AS4C128M16D3-12BCN	2 Gb	+1.5 V	128M x 16 bit	0 °C to +95 °C	96-ball
AS4C128M16D3-12BIN	2 Gb	+1.5 V	128M x 16 bit	-40 °C to +95 °C	96-ball
AS4C256M8D3-12BCN	2 Gb	+1.5 V	256M x 8 bit	0 °C to +95 °C	78-ball
AS4C256M8D3-12BIN	2 Gb	+1.5 V	256M x 8 bit	-40 °C to +95 °C	78-ball
AS4C256M16D3-12BCN	4 Gb	+1.5 V	256M x 16 bit	0 °C to +95 °C	96-ball
AS4C256M16D3-12BIN	4 Gb	+1.5 V	256M x 16 bit	-40 °C to +95 °C	96-ball
AS4C512M8D3-12BCN	4 Gb	+1.5 V	512M x 8 bit	0 °C to +95 °C	78-ball
AS4C512M8D3-12BIN	4 Gb	+1.5 V	512M x 8 bit	-40 °C to +95 °C	78-ball
AS4C64M16D3L-12BCN	1 GB	+1.35 V	64M x 16 bit	0 °C to +95 °C	96-ball
AS4C64M16D3L-12BIN	1 GB	+1.35 V	64M x 16 bit	-40 °C to +95 °C	96-ball
AS4C128M8D3L-12BCN	1 GB	+1.35 V	128M x 8 bit	0 °C to +95 °C	78-ball
AS4C128M8D3L-12BIN	1 GB	+1.35 V	128M x 8 bit	-40 °C to +95 °C	78-ball
AS4C128M16D3L-12BCN	2 Gb	+1.35 V	128M x 16 bit	0 °C to +95 °C	96-ball
AS4C128M16D3L-12BIN	2 Gb	+1.35 V	128M x 16 bit	-40 °C to +95 °C	96-ball
AS4C256M8D3L-12BCN	2 Gb	+1.35 V	256M x 8 bit	0 °C to +95 °C	78-ball
AS4C256M8D3L-12BIN	2 Gb	+1.35 V	256M x 8 bit	-40 °C to +95 °C	78-ball
AS4C256M16D3L-12BCN	4 Gb	+1.35 V	256M x 16 bit	0 °C to +95 °C	96-ball
AS4C256M16D3L-12BIN	4 Gb	+1.35 V	256M x 16 bit	-40 °C to +95 °C	96-ball
AS4C512M8D3L-12BCN	4 Gb	+1.35 V	512M x 8 bit	0 °C to +95 °C	78-ball
AS4C512M8D3L-12BIN	4 Gb	+1.35 V	512M x 8 bit	-40 °C to +95 °C	78-ball

Samples of the new DDR3 and DDR3L SDRAMs are available now, with lead times of six to eight weeks for production quantities. Pricing for U.S. delivery starts at $2.00 per piece in 1,000-piece quantities.

Alliance Memory Appoints Daniel Mak as Sales Director, Hong Kong and Southern China

claire — Mon, 07 Apr 2014 19:17:34 +0000

SAN CARLOS, Calif. — April 7, 2014 — Alliance Memory today announced that Daniel Mak has joined the company as its sales director in Hong Kong and Southern China. In his new role, Mr. Mak will be responsible for directing all sales activities in the region as the company's SRAM and DRAM products continue to experience market growth. Mr. Mak has worked in the semiconductor industry since 1991, holding key management positions since 1998. A veteran of DRAM manufacturer Winbond, Mr. Mak was most recently area manager of Hong Kong for Metatech Ltd. Previously, he served as sales manager for Karin Electronic Supplies Co. Ltd. "Not only does Daniel have over 20 years of experience in the semiconductor industry, but he also has experience working closely with Alliance Memory and our products," said Dan Gilbert, vice president of sales at Alliance Memory. "Combine this with his impressive track record of success in managerial positions and extensive knowledge of the Hong Kong market, and it's clear that he's the perfect choice to lead our sales efforts in the region." "I'm thrilled to have the opportunity to work with Alliance Memory again as we strive to meet the industry's strong demand for pin-for-pin-compatible legacy memory devices," said Mr. Mak. "By helping customers avoid costly redesigns, the company has made great strides in Hong Kong and Southern China, and I'm looking forward to playing a part in its continued success." Mr. Mak holds a Higher Certificate in electronic engineering from Hong Kong Polytechnic and a degree in applied physics from the City University of Hong Kong. He is based in Hong Kong and reports to Mr. Gilbert.

Alliance Memory Announces Rep Agreement With Crestone Technology Group

claire — Mon, 31 Mar 2014 19:22:03 +0000

SAN CARLOS, Calif. — Mar. 31, 2014 — Alliance Memory today announced that it has concluded an agreement with Crestone Technology Group, a value-added representative for electronic components to OEM customers throughout the Rocky Mountain territory. Under the agreement, Crestone is now offering Alliance Memory's entire lineup of SRAMs and DRAMs to customers in four states: Colorado, Idaho, Utah, and Wyoming. Alliance Memory manufactures a complete line of SRAMs, including 3.3 V and 5 V fast asynchronous SRAMs with speeds from 10 ns to 20 ns; wide-voltage low-power devices with densities from 64 Kb to 32 Mb; 2.5 V and 3.3 V ZBT/Sync pipelined burst (SPB)/Sync burst (SB) products; and synchronous DRAMs (SDR) with densities from 16 Mb to 512 Mb and commercial, industrial, and automotive temperature ranges. The company also offers double data rate synchronous DRAMs (SDRAM, DDR1, DDR2, and DDR3) with densities from 64M to 4GB. "Crestone has a long history of providing outstanding results for its suppliers, so we are naturally thrilled to be joining its product lineup," said Dan Gilbert, vice president of sales at Alliance Memory. "With its firmly established relationships with key customers in the Rocky Mountain region and wealth of market knowledge to apply to our product line, Crestone is the ideal partner to help us expand our reach in this part of the U.S." "By adding Alliance Memory to our line card, we are offering our customers convenient access to pin-for-pin-compatible legacy memory devices, which can help them avoid costly redesigns when faced with EOL components," said Troy Gruszczynski, managing partner of Crestone Technology Group. "The company's solutions offer the perfect complement to our lineup of the industry's latest ICs, allowing us to provide our customers with a single source for any design need." More information on Crestone is available at www.crestonegroup.com.

Alliance Memory Launches New x32 High-Speed CMOS SDRAMs in 90-Ball TFBGA and 86-Pin TSOP II Packages

claire — Mon, 24 Mar 2014 19:26:49 +0000

SAN CARLOS, Calif. — Mar. 24, 2014 — Alliance Memory today extended its offering of 64M, 128M, and 256M high-speed CMOS synchronous DRAMs (SDRAM) with new x32 devices in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA, and 86-pin 400-mil plastic TSOP II packages. The 2M x 32 AS4C2M32S-6TIN and AS4C2M32S-6BIN; 4M x 32 AS4C4M32S-6TIN and AS4C4M32S-6BIN; and 8M x 32 AS4C8M32S-7BCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical, telecom, and networking products requiring high memory bandwidth. For these applications, the devices feature fast access time from clock down to 5.4 ns. The devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. The AS4C2M32S-6TIN, AS4C2M32S-6BIN, AS4C4M32S-6TIN, AS4C4M32S-6BIN, and AS4C8M32S-7BCN are the latest in Alliance Memory's full line of high-speed SDRAMs, which includes devices with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages. The AS4C2M32S-6BIN and AS4C4M32S-6BIN are also available in commercial temperature versions, the AS4C2M32S-7BCN and AS4C4M32S-7BCN. Device Specification Table (new products highlighted in orange):

Part Number	Density	Configuration	Package	Temp. Range
AS4C2M32S-5TCN	2M x 32 bit	200 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C2M32S-6TCN	2M x 32 bit	166 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C2M32S-6TIN	2M x 32 bit	166 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C2M32S-6BIN	2M x 32 bit	166 MHz	90-ball TFBGA	-40 °C to +85 °C
AS4C2M32S-7TCN	2M x 32 bit	143 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C2M32S-7BCN	2M x 32 bit	143 MHz	90-ball TFBGA	0 °C to +70 °C
AS4C4M32S-6TCN	4M x 32 bit	166 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C4M32S-6TIN	4M x 32 bit	166 MHz	86-pin TSOP II	-40 °C to +85 °C
AS4C4M32S-6BIN	4M x 32 bit	166 MHz	90-ball TFBGA	-40 °C to +85 °C
AS4C4M32S-7TCN	4M x 32 bit	143 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C4M32S-7BCN	4M x 32 bit	143 MHz	90-ball TFBGA	0 °C to +70 °C
AS4C8M32S-6BIN	8M x 32 bit	166 MHz	90-ball TFBGA	-40 °C to +85 °C
AS4C8M32S-7BCN	8M x 32 bit	143 MHz	90-ball TFBGA	0 °C to +70 °C

Samples and production quantities of the new SDRAMs are available now, with lead times of six to eight weeks for large orders. Pricing for U.S. delivery starts at $1.50 per piece.

Alliance Memory Introduces New High-Speed CMOS Double Data Rate 2 (DDR2) Synchronous DRAMs With 512-Mb and 1-Gb Densities in 60-Ball (x8) and 84-Ball (x16) FBGA Packages

claire — Mon, 10 Mar 2014 19:34:26 +0000

SAN CARLOS, Calif. — Mar. 10, 2014 — Alliance Memory today introduced a new line of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) with densities of 512 Mb (AS4C32M16D2) and 1 Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages. The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in automotive, industrial, consumer, and networking products requiring high memory bandwidth. The AS4C32M16D2 is internally configured as four banks of 8M words x 16 bits. The AS4C64M16D2 and AS4C128M8D2 are internally configured as eight banks of 8M x 16 bits and 16M x 8 bits, respectively. The DDR2 SDRAMs offer a synchronous interface, operate from a single + 1.8-V (± 0.1 V) power supply, and are lead (Pb)- and halogen-free. The AS4C32M16D2, AS4C64M16D2, and AS4C128M8D2 feature a fast clock rate of 400 MHz and a data rate of 800 Mbps/pin, and they are offered in commercial (0 °C to +85 °C), industrial (-40 °C to + 95 °C), and automotive (-40 °C to +105 °C) temperature ranges. The DDR2 SDRAMs provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Part Number	Density	Configuration	Package	Temp. Range
AS4C32M16D2-25BCN	512 Mb	32M x 16 bit	84-ball FBGA	0° to +85 °C
AS4C32M16D2-25BIN	512 Mb	32M x 16 bit	84-ball FBGA	-40 °C to +95 °C
AS4C32M16D2-25BAN	512 Mb	32M x 16 bit	84-ball FBGA	-40 °C to +105 °C
AS4C64M16D2-25BCN	1G	64M x 16 bit	84-ball FBGA	0° to +85 °C
AS4C64M16D2-25BIN	1G	64M x 16 bit	84-ball FBGA	-40 °C to +95 °C
AS4C64M16D2-25BAN	1G	64M x 16 bit	84-ball FBGA	-40 °C to +105 °C
AS4C128M8D2-25BCN	1G	128M x 8 bit	60-ball FBGA	0° to +85 °C
AS4C128M8D2-25BIN	1G	128M x 8 bit	60-ball FBGA	-40 °C to +95 °C
AS4C128M8D2-25BAN	1G	128M x 8 bit	60-ball FBGA	-40 °C to +105 °C

Samples of the new DDR2 SDRAMs are available now, with lead times of six to eight weeks for production quantities. Pricing for U.S. delivery starts at $1.30 per piece.

Alliance Memory Introduces New High-Speed CMOS DDR SDRAMs With 64 Mb, 128 Mb, 256 Mb, and 512 Mb Densities and Temperature Range From -40 °C to +85 °C

claire — Tue, 25 Feb 2014 19:39:41 +0000

SAN CARLOS, Calif. — Feb. 25, 2014 — Alliance Memory today introduced a new line of high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 64 Mb (AS4C4M16D1-5TIN), 128 Mb (AS4C8M16D1-5TIN), 256 Mb (AS4C16M16D1-5TIN), and 512 Mb (AS4C32M16D1-5TIN) with an industrial temperature range of -40 °C to +85 °C. The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. Internally configured as four banks of 1M, 2M, 4M, or 8M word x 16 bits with a synchronous interface, the DDR SDRAMs operate from a single +2.5-V (± 0.2 V) power supply and are lead (Pb)- and halogen-free. The AS4C4M16D1-5TIN, AS4C8M16D1-5TIN, AS4C16M16D1-5TIN, and AS4C32M16D1-5TIN feature a fast clock rate of 200 MHz and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch. The 128M, 256 Mb and 512 Mb devices are also available in a TFBGA package. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Part Number	AS4C4M16D1- 5TIN	AS4C8M16D1- 5TIN	AS4C16M16D1- 5TIN	AS4C32M16D1- 5TIN
Density	64 Mb	128 Mb	256 Mb	512 Mb
Configuration	4M x 16 bit	8M x 16 bit	16M x 16 bit	32M x 16 bit
Clock rate	200 MHz	200 MHz	200 MHz	200 MHz
Data Rate	400 Mbps/pin	400 Mbps/pin	400 Mbps/pin	400 Mbps/pin
Package options	66-pin TSOP II	66-pin TSOP II 60-ball TFBGA	66-pin TSOP II 60-ball TFBGA	66-pin TSOP II 60-ball TFBGA

Samples and production quantities of the new DDR SDRAMs are available now, with lead times of six to eight weeks for large orders.

Alliance Memory Expands Automotive Grade DRAM Portfolio

Teresa — Wed, 23 Nov 2016 18:47:38 +0000

SAN CARLOS, Calif. — November 23, 2016 — Alliance Memory today announced that its synchronous DRAM (SDRAM) portfolio now features a wide variety of components that provide an automotive temperature range of -40° to +105 °C and are fabricated and assembled to automotive quality standards. Alliance Memory offers a complete lineup of high-speed CMOS SDRAMs, including double data rate (DDR), DDR2, and DDR3 devices. The company's portfolio of SDRAMs in the automotive temperature range includes components with densities of 64 Mb, 128 Mb, and 256 Mb. Automotive DDR1 SDRAMs feature densities of 128 Mb, 256 Mb, and 512 Mb, while DDR2 devices are available in densities of 256 Mb, 512 Mb, and 1 G. Alliance Memory's 1-Gb, 2-Gb, and 4-Gb automotive DDR3 SDRAMs operate over 1.35-V and 1.5-V power supplies. "Automotive customers need to be able to count on both the quality and the longevity of the memory components they design into key systems, which often need to be readily available years after the original design-in phase," said David Bagby, president and CEO at Alliance Memory. "Our commitment to the automotive market includes contracting with ISO/TS 16949 certified fab and assembly facilities around the world, as well as ensuring that the key AEC-Q101-qualified components customers need will be available to them far into the future." Selected automotive 40°C~105°C temperature DRAM products available from Alliance Memory:

Part number	Configuration	Clock rate
DDR3	AS4C256M16D3A-12BAN AS4C256M16D3LA-12BAN	4G
DDR3	AS4C512M8D3A-12BAN AS4C512M8D3LA-12BAN	4G
DDR3	AS4C128M16D3A-12BAN AS4C128M16D3LA-12BAN	2G
DDR3	AS4C256M8D3A-12BAN AS4C256M8D3LA-12BAN	2G
DDR3	AS4C128M8D3A-12BAN AS4C128M8D3LA-12BAN	1G
DDR3	AS4C64M16D3A-12BAN AS4C64M16D3LA-12BAN	1G
DDR2	AS4C64M16D2-25BAN	1G
DDR2	AS4C32M16D2A-25BAN AS4C64M8D2-25BAN	512M
DDR1	AS4C4M16D1A-5TAN	64M
SDRAM	AS4C4M16SA-6TAN AS4C4M16SA-6BAN	64M
SDRAM	AS4C8M16SA-6TAN AS4C8M16SA-6BAN	128M
SDRAM	AS4C16M16SA-6TAN AS4C16M16SA-6BAN	256M

Alliance Memory 16Gb Mobile LPDDR3 SDRAM Offers Low Power Consumption to Optimize Battery Life in Mobile Devices

claire — Tue, 28 Feb 2017 22:26:49 +0000

SAN CARLOS, Calif. — February 28, 2017 — Alliance Memory today introduced a new high-speed CMOS mobile low-power DDR3 (LPDDR3) SDRAM designed to extend battery life in compact portable devices. Featuring low voltage operation of 1.2V/1.8V and a number of power-saving features, the 16Gb AS4C512M32MD3 is offered in the 11.0mm by 11.5mm 178-ball FBGA package. With each new product generation, designers of mobile devices such as smartphones, tablets, and virtual and augmented reality (VR and AR) headsets are tasked with providing more functionality in less space while using less power. To meet this demand, the LPDDR3 device released today features auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, its partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn't required. "Reducing IC power consumption can directly increase battery life in portable devices, so the applications for LPDDR3 SDRAMs in the consumer and mobile communication markets continue to grow," said David Bagby, president and CEO of Alliance Memory. "At the same time, the number of suppliers for these devices is decreasing. Alliance Memory is offering designers a new alternative and shorter lead times for the low power consumption they require. Devices such as our new 16Gb AS4C512M32MD3 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications." Manufactured using a 20nm process, the AS4C512M32MD3 is internally configured as 8 banks x 32 Mbit x 32. The device offers high-speed operation with a clock frequency of 667MHz and data rate of 1333Mbps, and it features an extended commercial temperature range of -25°C to +85°C. The LPDDR3 SDRAM offers fully synchronous operation and programmable read or write burst lengths of 4, 8, or 16. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. The RoHS-compliant device is lead (Pb)- and halogen-free. Samples and production quantities of the new LPDDR3 are available now, with lead times of four to six weeks for production quantities. Pricing for U.S. delivery starts at $17.95 per piece.

Alliance Memory Expands Rep Agreement With ISMOSYS to Include Spain, Portugal, and Turkey

claire — Wed, 01 Feb 2017 22:40:22 +0000

SAN CARLOS, Calif. — February 1, 2017 — Alliance Memory today announced that the company has expanded its manufacturers' representative agreement with ISMOSYS, the principal trading division of the Spectrum Electronics Group. Having offered Alliance Memory's entire lineup of SRAMs and DRAMs in Italy since 2006, ISMOSYS is now the exclusive representative for the company's memory solutions to direct OEMs and distributor channels in Spain, Portugal, and Turkey. ISMOSYS was founded in 1994 to provide exceptional sales, marketing, and operational support to the electronics industry. For the company's customers, Alliance Memory's legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics applications. The company's SRAM offering includes a full range of 3.3V and 5V fast asynchronous devices, synchronous SRAMs, and low-power SRAMs, all of which are used with mainstream DSPs and microcontrollers. Alliance Memory's lineup of high-speed CMOS synchronous DRAMs (SDRAM) includes low-power mobile (MSDR), double data rate (DDR), DDR2, mobile low-power DDR2 (LPDDR2), DDR3 SDRAMs and mobile low-power DDR3 (LPDDR3) devices. The devices are available in a wide range of densities, configurations, package options, and temperature ratings, including automotive temperature ranges of -40°C to +105°C. The company's offering also features several discontinued devices from Micron Technology, including 512Mb SDRAMs in the 54-pin TSOP II package and lead (Pb)-bearing 64Mb, 128Mb, 256Mb, and 512Mb SDR SDRAMs; 256Mb and 512Mb DDR SDRAMs; and 2Gb DDR2 SDRAMs. "ISMOSYS has regional offices and representatives throughout the EMEA region, which allows the company to provide more personal service and unrivalled support in each market," said Sue Macedo, managing director, EMEA, of Alliance Memory. "This was a key factor in the company's success representing our solutions in Italy, and it perfectly positions ISMOSYS to address the needs of our growing customer base in Spain, Portugal, and Turkey." "Offering Alliance Memory's solutions in Italy has allowed us to provide our extensive customer base with a convenient, continuing supply option for EOL components — allowing them to avoid costly redesigns," said Roberto Blanco, regional director of Southern and Western Europe for ISMOSYS. "We look forward to extending our partnership with the company and bringing these benefits to additional EMEA markets." More information on ISMOSYS is available at http://ismosys.com.

Alliance Memory to Showcase Latest SDRAMs and Fast SRAMs at electronica 2016

claire — Wed, 02 Nov 2016 22:48:35 +0000

Highlights to Include Micron Technology 512-Mb Devices; Low-Power Mobile ICs; DDR, DDR2, and DDR3 SRAMs; and Automotive Components SAN CARLOS, Calif. — Nov. 2, 2016 — Alliance Memory today announced its technology lineup for electronica 2016, taking place Nov. 8-11 at the Munich Trade Fair Centre in Munich, Germany. In booth A5.224, the company will be highlighting its latest high-speed CMOS synchronous DRAMs (SDRAM), including new low-power mobile (MSDR), double data rate (DDR), DDR2, mobile low-power DDR2 (LPDDR2), and DDR3 SDRAMs in a variety of densities. The company will also highlight its offering of discontinued Micron Technology 512-Mb SDRAMs and a variety of components for automotive applications. In addition, Alliance Memory will showcase 16-Mb fast CMOS SRAMs in a wide range of packages. At electronica 2016, Alliance Memory will highlight Micron Technology 512-Mb SDRAMs in the 54-pin TSOP II package with commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges and operation from a single +3.3-V (±0.3 V) power supply. Lead (Pb)- and halogen-free, the MT48LC32M16A2P-75:C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are PC100- and PC133-compliant. To extend battery life in mobile devices, Alliance Memory will showcase new 512-Mb MSDRs in 54-ball and 90-ball FPBGA packages, and LPDDR2 components featuring densities of 1 Gb, 2 Gb, 4 Gb, and 8 Gb in 134-ball FBGA packages. The ICs offer low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode. DDR SDRAMs on display at electronica 2016 will include a new 1-Gb device with a fast clock rate of 166 MHz in the 66-pin TSOP package. Offered in 84-ball and 60-ball FBGA packages, highlighted DDR2 SDRAMs will feature fast clock rates of 400 MHz and data rates of 800 Mbps/pin. DDR3 SDRAMs on display will include new monolithic, low-voltage 8-Gb devices with extremely fast transfer rates of up to 1600 Mbps/pin, clock rates of 800 MHz, and backwards-compatibility with +1.5-V power supplies to enable large memory subsystems. Alliance Memory will highlight a wide variety of components that provide an automotive temperature range of -40 °C to +105 °C. Featured ICs will include 64-Mb, 128-Mb, and 256-Mb SDRAMs with clock rates of 166 MHz in 54-pin TSOP II and 54-ball FBGA packages; 64-Mb DDR SDRAMs with data rates of 400 Mbps/pin in the 66-pin TSOP II; 512-Mb and 1-Gb DDR2 SDRAMs in 84-ball and 60-ball FBGA packages with data rates of 800 Mbps/pin; and 1-Gb to 4-Gb DDR3 SDRAMs that feature data rates of 1600 Mbps/pin. In addition to its SDRAMs, Alliance Memory will be showcasing its offering of fast CMOS SRAMs. Featuring access times of 10 ns, components on display will include 16-Mb devices in TSOP I, TSOP II, and TFGBA packages. The ICs provide low power consumption with operating currents down to 70 mA typical and standby currents of 4 mA typical. Alliance Memory’s ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources. electronica is the world’s leading trade fair for components, systems, and applications. More information on the event is available at http://www.electronica.de/.

Alliance Memory at Electronica 2016

claire — Tue, 11 Oct 2016 22:58:14 +0000

At electronica 2016, Alliance Memory will be highlighting its latest high-speed CMOS synchronous DRAMs (SDRAM), including newly released low-power mobile (MSDR), double data rate (DDR), DDR2, mobile low-power DDR2 (LPDDR2), and DDR3 SDRAMs in a variety of densities. The company will also highlight its collaboration with Micron Semiconductor to offer discontinued 512-Mb SDRAMs. In addition, Alliance Memory will be showcasing 16-Mb fast CMOS SRAMs in a wide range of package options. Alliance Memory’s ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources. New Alliance Memory Products on Display at electronica 2016 Alliance Memory Successfully Collaborates With Micron Semiconductor to Offer Discontinued 512-Mb Synchronous DRAMs (SDRAM) Alliance Memory offers Micron Semiconductor 512-Mb SDRAMs in the 54-pin TSOP II package with commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges and operation from a single +3.3-V (±0.3 V) power supply. Lead (Pb)- and halogen-free, the MT48LC32M16A2P-75:C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are PC100- and PC133-compliant. High-Speed, Low-Power CMOS Mobile Synchronous DRAMs (MSDR) Alliance Memory will introduce two new high-speed, low-power CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life in mobile devices. The 512-Mb AS4C32M16MS and AS4C16M32MS are internally configured as four banks of 32M word x 16 bits and 16M word x 32 bits and are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages, respectively. The devices feature low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode. The MSDRs offer high-speed operation with clock rates up to 166 MHz and are available in both extended commercial (-25 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges. High-Speed CMOS Double Data Rate Synchronous DRAMs (DDR SDRAM) Alliance Memory is introducing a new 1-Gb high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) in the 66-pin TSOP II package. Internally configured as four banks of 64M word x 16 bits, the AS4C64M16D1 features a fast clock rate of 166 MHz and operates from a single +2.5-V (±0.2 V) power supply. The device is available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAM) Alliance Memory’s lineup of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) includes 2-Gb devices with fast clock rates of 400 MHz and data rates of 800 Mbps/pin. Offering high density, the 128M x 16 AS4C128M16D2 is available in the 84-ball, 8-mm by 12.5-mm by 1.2-mm FBGA package, while the 256M x 8 AS4C256M8D2 features the 60-ball, 8-mm by 10-mm by 1.2-mm FBGA package. The devices are available in commercial (0 °C to +85 °C) and industrial (-40 °C to +95 °C) temperature ranges, and they operate from a single +1.8-V (±0.1 V) power supply. High-Speed CMOS Mobile Low-Power Double Data Rate 2 (LPDDR2) Synchronous DRAMs (SDRAM) Alliance Memory has expanded its offering of mobile low-power synchronous DRAMs (SDRAM) with new double data rate 2 (LPDDR2) components featuring densities of 1 Gb, 2 Gb, 4 Gb, and 8 Gb in 134-ball FBGA packages. Designed to increase efficiency and extend battery life in compact portable devices, the ICs offer low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode. The LPDDR2s provide high-speed operation with clock rates of 400 MHz and 533 MHz, and they are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges. High-Speed CMOS Double Data Rate 3 Synchronous DRAMs (DDR3 SDRAM) Alliance Memory’s offering of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) includes new monolithic, low-voltage 8-Gb devices with extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. The 1G x 8 AS4C1G8MD3L and 512M x 16 AS4C512M16D3L are available in the 78-ball and 96-ball FBGA packages, respectively. The ICs operate from a single +1.35-V power supply and are backwards-compatible with +1.5-V power supplies to enable large memory subsystems. The DDR3 SDRAMs are available with an extended commercial temperature range of 0 °C to +95 °C and an industrial temperature range of -40 °C to +95 °C. DRAMs for Automotive Applications Alliance Memory’s DRAM portfolio features a wide variety of components that provide an automotive temperature range of -40 °C to +105 °C. Automotive synchronous DRAMs (SDRAM) include 64-Mb, 128-Mb, and 256-Mb devices with clock rates of 166 MHz in 54-pin TSOP II and 54-ball FBGA packages. Double data rate (DDR) SDRAMs include 64-Mb 4M x 16 devices with data rates of 400 Mbps/pin in the 66-pin TSOP II. Available in densities of 512 Mb and 1 Gb in the 84-ball and 60-ball FBGA packages, automotive double data rate 2 (DDR2) SDRAMs operate from a low 1.8-V power supply and deliver data rates of 800 Mbps/pin. 1-Gb to 4-Gb double data rate 3 (DDR3) SDRAMs feature data rates of 1600 Mbps/pin and operate from 1.35-V power supplies. Fast CMOS SRAMS Featuring access times of 10 ns, Alliance Memory’s offering of fast CMOS SRAMs includes 16-Mb devices configured as 2048K x 8 and 1024K x 16 in TSOP I, TSOP II, and TFGBA packages. The components provide low power consumption with operating currents down to 70 mA typical and standby currents of 4 mA typical. The SRAMs operate from a single power supply of 3.3 V and offer a temperature range of -40 °C to +85 °C.

Alliance Memory's New 512-Mb High-Speed Mobile SDR SDRAMs Lower Power Consumption and Extend Battery Life in Mobile Devices

claire — Wed, 05 Oct 2016 23:03:09 +0000

SAN CARLOS, Calif. — October 5, 2016 — Alliance Memory today introduced two new high-speed CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life in mobile devices. Featuring low power consumption of 1.8 V and a number of power-saving features, the 512-Mb AS4C32M16MS and AS4C16M32MS are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages. Designers of today's mobile devices are tasked with providing more functionality in tighter spaces while using less power. To meet this demand, the MSDRs released today feature auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required. "As devices such as smartphones and tablets become ubiquitous, consumers have begun to rely on mobile apps more than websites, and the vast majority utilize their smartphones when making purchasing decisions," said David Bagby, president and CEO of Alliance Memory. "This has made extending battery life more important than ever, and reducing a DRAM's average power consumption can have a big impact. Our new mobile SDR SDRAMs deliver these power savings in a compact footprint optimized for space-constrained designs." As the number of mobile SDR SDRAM suppliers continues to decrease, Alliance Memory is offering designers a new source and shorter lead times for DRAMs with the low power consumption they require. The company's AS4C32M16MS and AS4C16M32MS provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking and telecommunications devices. The AS4C32M16MS and AS4C16M32MS are internally configured as 4 banks x 8 Mbit x 16 and 4 banks x 4 Mbit x 32, respectively, and offer high-speed operation with clock rates up to 166 MHz. For optimal functionality in extreme environments, the devices are available in both extended commercial (-25 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges. The MSDRs offer fully synchronous operation and provide programmable read or write burst lengths of 1, 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. The devices are lead (Pb)- and halogen-free.

Part number	Configuration	Clock rate	Package	Temp. range
AS4C32M16MS-7BCN	32M x 16 bit	133 MHz	54-ball FPBGA	-25 °C to +85 °C
AS4C32M16MS-7BCNTR*	32M x 16 bit	133 MHz	54-ball FPBGA	-25 °C to +85 °C
AS4C32M16MS-6BIN	32M x 16 bit	166 MHz	54-ball FPBGA	-40 °C to +85 °C
AS4C32M16MS-6BINTR*	32M x 16 bit	166 MHz	54-ball FPBGA	-40 °C to +85 °C
AS4C16M32MS-7BCN	16M x 32 bit	133 MHz	90-ball FPBGAA	-25 °C to +85 °C
AS4C16M32MS-7BCNTR*	16M x 32 bit	133 MHz	90-ball FPBGAA	-25 °C to +85 °C
AS4C16M32MS-6BIN	16M x 32 bit	166 MHz	90-ball FPBGAA	-40 °C to +85 °C
AS4C16M32MS-6BINTR*	16M x 32 bit	166 MHz	90-ball FPBGAA	-40 °C to +85 °C

*Tape-and-reel packaging Samples and production quantities of the new MSDRs are available now, with lead times of eight weeks for production quantities. Pricing for U.S. delivery starts at $5 per piece in 1,000-piece quantities.

Alliance Memory Launches New Monolithic High-Speed, Low-Voltage 1G x 8 CMOS DDR3L SDRAM in 78-Ball FBGA Package

claire — Wed, 13 Jul 2016 23:30:48 +0000

8-Gb Device Increases Power Efficiency for High-End Computer and Storage Systems SAN CARLOS, Calif. — July 13, 2016 — Alliance Memory today introduced a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gb density in the 78-ball, 9-mm by 13.2-mm, lead (Pb)-free FBGA package. Delivering increased power efficiency for high-end computer and storage systems, the 1G x 8 AS4C1G8MD3L offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. The AS4C1G8MD3L's transfer rates are twice as high as DDR and DDR2 SDRAMs, providing higher bandwidth for newer-generation microprocessors in industrial, medical, networking, telecom, and aerospace applications. The 8-GB DDR3L SDRAM operates from a single +1.35-V power supply and is backwards-compatible with +1.5-V power supplies to enable large memory subsystems. The device is a logical choice for customers that require increased memory yet face board space constraints. The AS4C1G8MD3L is available with an extended commercial temperature range of 0 °C to +95 °C (AS4C1G8MD3L-12BCN). Internally configured as eight banks of 1G x 8 bits, the DDR3L SDRAM features a fast 64-ms, 8192-cycle refresh from 0 °C to +85 °C and 32 ms from +85 °C to +95 °C. The device released today offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance. In addition to the 1G x 8 AS4C1G8MD3L, Alliance Memory also offers the 512M x 16 AS4C512M16D3L in the 96-ball FBGA package, which is available in an extended commercial temperature range (AS4C512M16D3L-12BCN) and an industrial temperature range from -40 °C to +95 °C (AS4C512M16D3L-12BIN). Alliance Memory is one of the few suppliers of monolithic DDR3L SDRAMs with high densities to 8 Gb. In addition, with minimal die shrinks, the single-die AS4C1G8MD3L provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions — eliminating the need for costly redesigns and part requalification. Samples and production quantities of the new 8-GB DDR3L SDRAM are available now, with lead times of six to eight weeks. Pricing for U.S. delivery starts at $18.00 per piece.

Alliance Memory Launches New 256M High-Speed CMOS SDRAMs in the 86-Pin TSOP II Package

claire — Thu, 23 Jun 2016 23:37:13 +0000

SAN CARLOS, Calif. — June 23, 2016 — Alliance Memory today extended its offering of 256M high-speed CMOS synchronous DRAMs (SDRAM) with two new x32 devices in the 86-pin 400-mil plastic TSOP II package. Internally configured as four banks of 8M word x 32 bits, the high-density AS4C8M32S-6TIN and AS4C8M32S-7TCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical, telecom, and networking products requiring high memory bandwidth. The SDRAMs offer a synchronous interface, operate from a single +3.3-V (± 0.3 V) power supply, and are lead (Pb)- and halogen-free. The devices released today feature fast access time from clock down to 5.4 ns and clock rates to 166 MHz, and they are available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. The SDRAMs provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. The AS4C8M32S-6TIN and AS4C8M32S-7TCN are the latest in Alliance Memory’s full line of high-speed SDRAMs, which includes components with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages. For Alliance Memory customers, the devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn’t perform die shrinks, which frees up engineering resources. Device Specification Table (new x32 products in bold):

Part number	Configuration	Clock rate	Package	Temp. range
AS4C2M32S-6BIN	2M x 32 bit	166 MHz	90-ball TFBGA	-40 °C +85 °C
AS4C2M32S-7BCN	2M x 32 bit	143 MHz	90-ball TFBGA	0 °C to +70 °C
AS4C2M32SA-6TCN	2M x 32 bit	166 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C2M32SA-6TIN	2M x 32 bit	166 MHz	86-pin TSOP II	-40 °C +85 °C
AS4C2M32SA-7TCN	2M x 32 bit	143 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C4M32S-6BIN	4M x 32 bit	166 MHz	90-ball TFBGA	-40 °C +85 °C
AS4C4M32S-7BCN	4M x 32 bit	143 MHz	90-ball TFBGA	0 °C to +70 °C
AS4C4M32SA-6TCN	4M x 32 bit	166 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C4M32SA-6TIN	4M x 32 bit	166 MHz	86-pin TSOP II	-40 °C +85 °C
AS4C4M32SA-7TCN	4M x 32 bit	143 MHz	86-pin TSOP II	0 °C to +70 °C
AS4C8M32S-6BIN	8M x 32 bit	166 MHz	90-ball TFBGA	-40 °C +85 °C
AS4C8M32S-6TIN	8M x 32 bit	166 MHz	86-pin TSOP II	-40 °C +85 °C
AS4C8M32S-7BCN	8M x 32 bit	143 MHz	90-ball TFBGA	0 °C to +70 °C
AS4C8M32S-7TCN	8M x 32 bit	143 MHz	86-pin TSOP II	0 °C to +70 °C

Samples and production quantities of the new SDRAMs are available now, with lead times of six to eight weeks for large orders. Pricing for U.S. delivery starts at $3.95 per piece.

Alliance Memory Selling Discontinued Micron Technology Lead (Pb)-Bearing DDR, DDR2, and SDR SDRAMs

claire — Thu, 09 Jun 2016 23:48:11 +0000

SAN CARLOS, Calif. — June 9, 2016 — Alliance Memory today announced that the company is selling Micron Technology lead (Pb)-bearing double data rate (DDR), double data rate 2 (DDR2), and single data rate (SDR) devices that Micron discontinued with Micron PCN #31396 (last time buy: April 15, 2015; last time ship: Nov. 30, 2015). "We've had great success providing continued support for Micron's legacy 512M SDRAMs," said David Bagby, president of Alliance Memory. "This has eliminated the need for the company's customers to invest in redesigns, and we've committed to providing these 512M devices with their original part numbers into 2017. Furthermore, we will soon announce a new die revision that will make it an easy transition to our own pin-for-pin compatible parts. We're pleased to expand this offering to include Micron's EOL leaded devices, a move that firmly establishes us as the leader in the legacy memory market." Alliance Memory is offering a wide range of lead-bearing Micron devices, including 64M, 128M, 256M, and 512M SDR SDRAMs; 256M and 512M DDR SDRAMs; and 2G DDR2 SDRAMs. The devices are available in a variety of configurations, packages, and voltages, and are offered in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. A complete list of leaded Micron devices and sample request information is available here.

Alliance Memory Launches New 8M Low-Power CMOS SRAM With 2.7-V to 3.6-V Power Supply in TSOP-I Package

claire — Wed, 25 May 2016 19:11:31 +0000

SAN CARLOS, Calif. — May 25, 2016 — Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 8M IC (512K x 16 bit) in the 48-pin 12-mm by 20-mm TSOP-I package. Available from a very limited number of suppliers and recently discontinued by another manufacturer, the AS6C8016-55TIN operates from a single power supply of 2.7 V to 3.6 V and offers a fast access time of 55 ns. The device released today features low power consumption with a typical operating current of 30 mA and standby current of 1.5 µA. The IC provides high reliability and power savings for low-power portable electronics and industrial, telecom, medical, automotive, and networking applications, and is particularly well-suited for battery backup non-volatile memory. The AS6C8016-55TIN is fabricated using very high-performance, high-reliability CMOS technology, and its standby current is stable within the operating temperature range of - 40 °C to + 85 °C. The RoHS-compliant device offers fully static operation and tri-state output, and it features a data retention voltage of 1.2 V minimum. All inputs and outputs are fully TTL-compatible. Alliance Memory’s legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS6C8016-55TIN is the latest in the company’s full range of low-power SRAM products, which include devices with densities of 64K, 256K, 1M, 2M, 4M, 8M, 16M, and 32M. Samples and production quantities of the AS6C8016-55TIN are available now, with a lead time of six to eight weeks for large orders. Pricing starts at $2.95 per piece in 1,000-piece quantities.

Alliance Memory Celebrates 10 Years Supplying Legacy Memory ICs

claire — Tue, 10 May 2016 19:17:30 +0000

SAN CARLOS, Calif. — May 10, 2016 — Alliance Memory today announced that the company is celebrating its 10th anniversary. Founded in 2006 as a provider of legacy asynchronous SRAMs, the company has experienced tremendous growth during its 10 years in the memory market. This includes adding a complete line of synchronous DRAMs (SDRAMs), low-power DDR1, DDR2, and DDR3 SDRAMs, and low-power DRAMs to its product portfolio, as well as developing an extensive global distribution network. “We’ve seen a lot of changes in the memory market since we first opened our doors,” said David Bagby, president and CEO of Alliance Memory. “Many of the big industry players have moved on, the wait time on legacy products has shrunk considerably, and the online market has really taken off. The biggest change, however, has been the increase in demand for SDRAMs. Adding these products to our lineup has been one of the biggest contributors to our success, and it recently created the need for a larger facility to accommodate our explosive growth.” Additions to Alliance Memory’s DRAM lineup have included high-speed CMOS double data rate (DDR1), low-power mobile DDR1 (MDDR1), DDR2, and DDR3 SDRAMs in a wide range of densities, configurations, package options, and temperature ratings. Most recently, the company made history by working with Micron Technologies in advance of a planned end-of-life to maintain availability of several Micron 512 Mb SDRAMs in the 54-pin TSOP II package. Alliance Memory will continue to add to this lineup in 2016. In addition to the expansion of its product lines, Alliance Memory has expanded its customer base to over 5,000 customers by remaining focused on the development of its distribution network. The company started with very few distributors in 2006, and it has since established a strong presence around the world. Global partnerships with distributors including Avnet, Future Electronics, and Rutronik Electronic Worldwide are complemented by a strong presence in China with Asiacom, Burnon International, Jetronics, and SEKORM and in the EMEA region with MSC Technologies (an Avnet company), Avnet-Memec Silica, and Endrich. Online, Mouser, Digi-Key, and Transfer Multisort Electronics (TME) have been instrumental in bringing Alliance Memory’s solutions to a large number of new customers. “We have a lot to celebrate at this important milestone in our company’s history,” added Bagby. “Ten years is a long time in the high-tech industry, and Alliance Memory has not only survived, it’s thriving. We’re grateful to our amazing team and distribution partners worldwide who have helped make this possible, and we can’t wait to see what the next 10 years bring.” Alliance Memory products provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products. The devices eliminate costly redesigns by providing long-term support for components that have been discontinued by their original manufacturers. In addition, the company performs minimal or no die shrinks, which frees up engineering resources for users.

Alliance Memory Signs Distributor Agreement With Macnica's TecStar Company

claire — Tue, 14 Mar 2017 21:11:19 +0000

SAN CARLOS, Calif. — March 14, 2017 — Alliance Memory today announced that it has signed a franchise distributor agreement with TecStar Company, a Japan-based company of Macnica Inc., a global leader in supplying electronic components to OEMs and manufacturers. Under the agreement, TecStar will offer Alliance Memory's complete lineup of DRAMs and SRAMs to its customers around the world. Located in Shin-Yokohama, Kanagawa Prefecture, TecStar provides a global supply channel for state-of-the-art electronics — backed by world-class technical support and design services. For the company's customers, Alliance Memory products provide reliable drop-in, pin-for-pin-compatible replacements for a number of hard-to-find DRAMs and SRAMs in communications, computing, consumer electronics, medical, automotive, and industrial markets. Alliance Memory's lineup of high-speed CMOS synchronous DRAMs (SDRAM) includes low-power mobile (MSDR), double data rate (DDR), DDR2, mobile low-power DDR2 (LPDDR2), DDR3 SDRAMs, and mobile low-power DDR3 (LPDDR3) devices. The devices are available in a wide range of densities, configurations, package options, and temperature ratings, including automotive temperature ranges of -40°C to +105°C. The company's offering also features several discontinued devices from Micron Technology, including 512-Mb SDRAMs in the 54-pin TSOP II package and lead (Pb)-bearing 64-Mb, 128-Mb, 256-Mb, and 512-Mb SDR SDRAMs; 256-Mb and 512-Mb DDR SDRAMs; and 2-Gb DDR2 SDRAMs. "TecStar will be an invaluable partner as we continue our expansion in the worldwide industrial, medical, automotive, communications, and consumer electronics markets," said Ted Kasahara, director of Japan sales for Alliance Memory. "In addition to being a first-class distributor with an efficient logistics infrastructure and strong customer relationships, the company offers unmatched technical support and service to provide designers with a complete solution. We couldn't be more pleased for TecStar to be supplying our DRAM and SRAM memory products." "For electronics OEMs and manufacturers in Japan and around the world, there is a high demand for EOL memory solutions to eliminate the need for costly redesigns," said Kazuyuki Sawada, director of product sales at TecStar Company. "By allowing us to meet this demand, Alliance Memory's solutions portfolio makes a powerful addition to our line card that we are excited to offer to our customers." More information on Macnica and TecStar is available at http://www.macnica.com/companies/components/macnica-japan-divisions.

New Alliance Memory 512Mb SDRAMs in 54-Pin TSOP II Package Provide Pin-for-Pin Replacements for Discontinued Micron Technology Devices

claire — Wed, 29 Mar 2017 21:16:56 +0000

SAN CARLOS, Calif. — March 29, 2017 — Alliance Memory today introduced two new 512Mb synchronous DRAMs (SDRAM) in the 54-pin TSOP II package. The AS4C32M16SB-7TCN and AS4C32M16SB-7TIN are available in commercial (0°C to +70°C) and industrial (-40°C to +85°C) temperature ranges. The devices provide pin-for-pin replacements for Micron Technology’s discontinued 32M x 16 MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN) and MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN) SDRAMs. Alliance Memory bought the remaining stock of these Micron Technology 512Mb SDRAMs in 2014. “We are committed to making the transition to Alliance parts as easy as possible for Micron customers, with no gap in product availability,” said David Bagby, president and CEO of Alliance Memory. “We will continue to sell these SDRAMs with their Micron part numbers while stock lasts, and the Alliance-branded AS4C32M16SM-7TCN and AS4C32M16SM-7TIN will be available while supplies last. The AS4C32M16SB-7TCN and AS4C32M16SB-7TIN (“B die”) will be available for at least five years. The devices released today will provide a long-term solution, offering customers pin-for-pin-compatible replacements at a lower cost.” The AS4C32M16SB-7TCN and AS4C32M16SB-7TIN are optimized for medical, industrial, point-of-sale, automotive, and telecom applications requiring high memory bandwidth. The devices operate from a single +3.3V (±0.3V) power supply, offer fast clock rates up to 143MHz, and are lead (Pb)- and halogen-free. The SDRAMs provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. Device Specification Table

Part number	Pin-for-pin compatibility	Clock rate (MHz)	Temp. range (°C)
AS4C32M16SB-7TCN	MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN)	143 MHz	0 to 70
AS4C32M16SB-7TIN	MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN)	143 MHz	-40 to 85

Samples and production quantities of the AS4C32M16SB-7TCN and AS4C32M16SB-7TIN are available now, with lead times of six to eight weeks for large orders.

Alliance Memory Launches New Line of 1Gb, 2Gb, and 4Gb Mobile LPDDR2 SDRAMs to Increase Battery Life in Portable Electronics

claire — Wed, 12 Apr 2017 21:24:40 +0000

SAN CARLOS, Calif. — April 12, 2017 — Alliance Memory today introduced a new line of high-speed CMOS mobile low-power DDR2 (LPDDR2) SDRAMs with densities of 1Gb, 2Gb, and 4Gb in the 134-ball FBGA package. The devices offer a variety of power-saving features, including 1.2 V/1.8 V operating voltages, to extend battery life in portable electronics, while their high density enables ultra-slim designs. The LPDDR2 SDRAMs released today provide reliable drop-in, pin-to-pin compatible replacements for a number of similar solutions in ultra-low-voltage cores and I/O power supplies for mobile devices such as smartphones and tablets. For these products, the ICs feature auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn't required. Featuring a double data rate four-bit prefetch architecture, the LPDDR2 SDRAMs deliver high-speed operation with clock rates of 400MHz and 533MHz, and are available in commercial (-30°C to +85°C) and industrial (-40°C to +85°C) temperature ranges. The devices offer programmable read or write burst lengths of 4, 8, or 16; an auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. The RoHS-compliant ICs are lead (Pb)- and halogen-free. Device Specification Table

Part number	Density	Configuration	Temp.	Clock rate	Package
AS4C64M16MD2-25BCN	1Gb	64M x 16 bit	-30°C to +85°C	400MHz	134-ball FBGA
AS4C32M32MD2-25BCN	1Gb	32M x 32 bit	-30°C to +85°C	400MHz	134-ball FBGA
AS4C64M32MD2-25BCN	2Gb	64M x 32 bit	-30°C to +85°C	400MHz	134-ball FBGA
AS4C128M16MD2-25BCN	2Gb	128M x 16 bit	-30°C to +85°C	400MHz	134-ball FBGA
AS4C128M32MD2-18BCN	4Gb	128M x 32 bit	-30°C to +85°C	533MHz	134-ball FBGA
AS4C128M32MD2-18BIN	4Gb	128M x 32 bit	-40°C to +85°C	533MHz	134-ball FBGA

Alliance Memory offers an extensive line-up of mobile low-power SDRAMs to help designers meet the demand for reduced power consumption in portable electronics, including 64M, 128M, 256M, 512M, and 1GB LPDDR1 SDRAMs and 16GB LPDDR3 SDRAMs. 8GB 256M x 32 LPDDR2 SDRAMs in the 134-ball FBGA package will also be available soon. Samples and production quantities of the new LPDDR2 SDRAMs are available now, with lead times of four to eight weeks for production quantities.

Alliance Memory Introduces New 1Gb High-Speed CMOS DDR SDRAM in 128M x 8 Configuration

claire — Wed, 26 Apr 2017 22:45:15 +0000

SAN CARLOS, Calif. — April 26, 2017 — Alliance Memory today introduced a new 1Gb high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) in the 66-pin TSOP II package. Offered in an industrial temperature range from -40°C to +85°C, the AS4C128M8D1-6TIN features a hard-to-find internal configuration of four banks of 32M word x 8 bits. With a clock frequency up to 166 MHz for fast data transfer rates, the device released today provides a reliable drop-in, pin-to-pin compatible replacement for a number of similar solutions in industrial, medical, communications, and military products requiring high memory bandwidth. The DDR SDRAM operates from a single +2.5V (±0.2V) power supply, features a power down mode to lower power consumption, and offers a data mask for write control. The AS4C128M8D1-6TIN supports sequential and interleave burst types with read or write burst lengths of 2, 4, or 8. Operating the device's four banks in an interleaved fashion allows random access operation to occur at a higher rate than standard DRAMs, while a sequential and gapless data rate is possible depending on burst length, CAS latency, and speed grade. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. Alliance Memory offers an extensive lineup of DDR SDRAMs featuring densities of 64Mb, 128Mb, 256Mb, 512Mb, and 1Gb. For the company's customers, these devices eliminate costly redesigns by providing long-term support for products that have been end-of-lifed (EOLed) by other suppliers. Samples and production quantities of the AS4C128M8D1-6TIN are available now, with lead times of four to eight weeks. Pricing is $24.95 per piece.

Alliance Memory Appoints TJ Mueller as Vice President of Marketing

claire — Wed, 03 May 2017 22:47:26 +0000

SAN CARLOS, Calif. — May 3, 2017 — Alliance Memory today announced that TJ Mueller has joined the company as vice president of marketing. In his new role, Mr. Mueller will be responsible for positioning the company for growth in new markets, bolstering its product offering through the acquisition of new products, and establishing relationships with other leading-edge semiconductor companies for the development of reference designs for various applications. Mr. Mueller has over 20 years of experience in business development, marketing, product management, and sales for leading semiconductor companies. Most recently, he served as business manager for the Communications Business Unit at Altera Corporation, which was acquired by Intel in 2016. Previously, he held the positions of director of corporate business development and product management at Integrated Device Technology (IDT); vice president of marketing at NetLogic Microsystems (later acquired by Broadcom); and product manager for memory products at Hitachi Semiconductor America. "I've known TJ since the 1990s, when he was managing the DRAM business at Hitachi America while I managed the SRAM market," said David Bagby, president and CEO of Alliance Memory. "In the years since, he has established an impressive track record of success in the semiconductor industry in a variety of management roles. With TJ as our vice president of marketing, Alliance Memory is well positioned for continued and accelerated growth." "Alliance Memory has become an indispensable resource for manufacturers around the world who need a flexible and reliable source of memory ICs for their products," said Mr. Mueller. "The company continues to rewrite the playbook for how this semiconductor industry supports customers over the long term, and I'm looking forward to helping create the next several chapters in this compelling story." Mr. Mueller holds a bachelor's degree in electrical engineering and computer science from Stanford University. He is located in San Carlos, California, and reports to David Bagby.

Alliance Memory Launches New 32-Bit Wide 8Mb and 16Mb Fast SRAMs in 90-Ball TFBGA Package

Teresa — Wed, 17 May 2017 18:31:34 +0000

SAN CARLOS, Calif. — May 17, 2017 — To meet the demand for high-density fast CMOS SRAMs, Alliance Memory today introduced new 8Mb and 16Mb x32 devices in the 90-ball 8mm by 13mm TFBGA package. Providing space-saving alternatives to solutions in larger 119-ball packages, the devices released today are optimized for networking routers and switchers, test and medical equipment, and automotive applications. Featuring access times of 10 ns and data retention voltages of 1.5V minimum, the 8Mb AS7C325632-10BIN and 16Mb AS7C351232-10BIN are configured as 256K x 32 and 512K x 32, respectively. The SRAMs provide low power consumption with operating current of 125mA typical and standby current of 4mA typical. The devices operate from a single power supply of 3.3V and offer tri-state output. The RoHS-compliant and halogen-free components operate over a -40°C to +85°C temperature range. The AS7C325632-10BIN and AS7C351232-10BIN are the latest additions to Alliance Memory’s full range of fast SRAMs, which include devices with densities from 64K to 16M. Fabricated using high-performance, high-reliability CMOS technology, the ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. Samples and production quantities of the new fast SRAMs are available now, with lead times of eight weeks for production quantities. Pricing for U.S. delivery starts at $12 per piece for the AS7C325632-10BIN and $15 per piece for the AS7C351232-10BIN.

Alliance Memory Introduces New Die Version for 2Gb and 4Gb DDR3 and DDR3L SDRAMs; Provides New Memory Chip Source in Face of Market Shortages

Teresa — Wed, 07 Jun 2017 19:43:33 +0000

SAN CARLOS, Calif. — June 7, 2017 — To address the memory market’s shortage of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs, Alliance Memory today announced a new die revision (B die) for its 2Gb and 4Gb devices in the 96-ball FBGA package. “Market demand for DDR3 and DDR3L SDRAMs is extremely high due to their increased functionality and speed, but their availability is becoming more and more limited as demand exceeds supply and suppliers move capacity to Flash and other products,” said TJ Mueller, Vice President of Marketing at Alliance Memory. “With the introduction of a new B die version, we now have two sources for our 2Gb and 4Gb parts’ silicon. This means our customers can be more confident than ever in our ability to deliver these devices despite shortages and price increases in the memory market.” The DDR architecture of Alliance Memory’s 2Gb and 4Gb DDR3 and DDR3L SDRAMs allows them to achieve extremely fast transfer rates of 1600Mbps and clock rates of 800MHz. With minimal die shrinks, the devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in newer-generation microprocessors for networking, industrial, medical, telecom, and consumer applications — eliminating the need for costly redesigns and part requalification. The 2Gb AS4C128M16D3B-12BCN and 4Gb AS4C256M16D3B-12BCN DDR3 SDRAMs operate from a single +1.5V (±0.075V) power supply, while the 4 Gb AS4C256M16D3LB-12BCN DDR3L SDRAM operates from a single +1.35V power supply. The devices offer a data mask for write control and are available with a commercial temperature range of 0°C to +95°C. The 4Gb DDR3L SDRAM is also available in an industrial temperature range of -40°C to +95°C. The 2Gb DDR3 SDRAMs are internally configured as eight banks of 16M word x 16 bits, while the 4Gb DDR3 and DDR3L SDRAMs are configured as eight banks of 32M word x 16 bits. All devices support sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free. Device Specification Table:

Part number	Density	Configuration	Power supply	Temp. range	Package
AS4C128M16D3B-12BCN	2Gb	128M x 16 bit	+1.5V	0°C to +95°C	96-ball FBGA
AS4C128M16D3LB-12BCN	2Gb	128M x 16 bit	+1.35V	0°C to +95°C	96-ball FBGA
AS4C256M16D3B-12BCN	4Gb	256M x 16 bit	+1.5V	0°C to +95°C	96-ball FBGA
AS4C256M16D3LB-12BCN	4Gb	256M x 16 bit	+1.35V	0°C to +95°C	96-ball FBGA
AS4C256M16D3LB-12BIN	4Gb	256M x 16 bit	+1.35V	-40°C to +95°C	96-ball FBGA

B die DDR3 and DDR3L SDRAMs are available now, with lead times of four to eight weeks for production quantities. Pricing for U.S. delivery starts at $4.95 per piece in 1,000-piece quantities.

Alliance Memory Makes it Easier to Find and Buy Any DRAM Memory Chip in its Wide Product Lineup

Teresa — Wed, 20 Sep 2017 17:55:51 +0000

SAN CARLOS, Calif. — Sept. 20, 2017 — Alliance Memory is making it easier for its customers to find any DRAM memory chip in its extensive offering — including scarce allocated devices and uncommon packages and densities — with a new website that shows part inventories at worldwide distributors such as Avnet, Digi-Key, Future, and Mouser. Founded in 2006, Alliance Memory has become an essential lifeline for customers that need an ongoing source of DRAMs for established products like embedded systems, industrial automation, ATMs, wireless base stations, and many others. By offering memory ICs for which there are few other reliable sources, Alliance Memory helps its customers eliminate the need for costly redesigns and part re-qualifications when parts are discontinued by other suppliers. "At Alliance Memory, our focus on supporting customers with SRAM and DRAM memory ICs is crystal clear, so we're continuing to serve them with high stock levels despite the difficult supply situation of the past several quarters," said David Bagby, Alliance Memory President and CEO. "There is no DRAM shortage at Alliance Memory. Our strategy remains to offer both legacy products and new products to our customers for the long term." Alliance Memory's products include synchronous and asynchronous SRAMs and a comprehensive line of DRAMs, including SDRAM, DDR, DDR2, DDR3, and mobile LPDDR, LPDDR2, and LPDDR3 devices.

Alliance Memory Expands Its Lineup of Low-Power SRAMs With New 64Mb Device in TSOP-I Package

Nathan — Wed, 08 Nov 2017 21:40:37 +0000

SAN CARLOS, Calif. — Nov. 8, 2017 — To meet the demand for low-power SRAMs with higher densities, Alliance Memory today introduced a new 64Mb (4M x 16 bit) device in 48‑pin, 12mm by 20mm TSOP-I and 48-ball TFBGA packages. Available from a very limited number of suppliers, the AS6C6416-55 operates from a single power supply of 2.7V to 3.6V and offers a fast access time of 55ns. The device released today features low power consumption with a typical operating current of 12mA and standby current of 12µA. The IC provides high reliability and power savings for low-power portable electronics and industrial automation, telecom, medical, and broadcast equipment, and is particularly well-suited for battery backup non-volatile memory. The AS6C6416-55 is fabricated using very high-performance, high-reliability CMOS technology, and its standby current is stable within the operating temperature range of -40°C to +85°C. The RoHS-compliant device offers fully static operation and tri-state output, and it features a data retention voltage of 1.2V minimum. All inputs and outputs are fully TTL-compatible. The new IC provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions. The AS6C6416-55 is the latest in the company's full range of low-power SRAM products, which include devices with densities of 64K, 256K, 1M, 2M, 4M, 8M, 16M, 32M, and now 64M. Link to product datasheet and ordering information: https://www.alliancememory.com/as6c6416/ (AS6C6416-55TIN, TSOP-I) Samples of the AS6C6416-55TIN are available now. Production quantities — including a version in the 48-ball TFBGA package, AS6C6416-55BIN — will be available in Q4 2017, with lead times of eight weeks.

Didier Boursier to Head Up Alliance Memory Regional Sales in France

Nathan — Thu, 30 Nov 2017 13:25:07 +0000

SAN CARLOS, Calif. — Nov. 30, 2017 — Alliance Memory today announced the appointment of Didier Boursier as the company's first regional sales manager for France. Reporting to Sue Macedo, Alliance Memory's EMEA managing director, Mr. Boursier will drive revenue growth in France by building the company's direct OEM business and driving design wins at key accounts. Currently, Alliance Memory has its highest market share in Europe, and actively supports over 500 customers in the French memory market. The company has become a strong and recognized leader by supporting customers with a reliable supply of memory chips, despite the worldwide shortage of DRAMs, and by providing solutions that involve minimal die changes. A business and sales development professional with more than 25 years of experience in the microelectronics industry, Mr. Boursier has relationships with over 7,000 contacts in France and throughout Europe. Previously, he has worked for semiconductor manufacturers such as SIPCUBE, Centillium Communications, Marvell, and Lattice Semiconductor. "Didier is incredibly well-connected in France and throughout Continental Europe, and his experience spans both the chip supplier and channel partner sides of the business," Ms. Macedo said. "We couldn't ask for someone better suited to carry out Alliance Memory's goals of increased design wins and OEM penetration on the one hand, and strengthening relations with our key partners — including Future Electronics, Rutronik Electronics, Avnet EMEA, Digi-Key, and Mouser — on the other." "Alliance Memory offers a totally unique value proposition for customers in France and beyond who need an absolutely reliable source of critical memory components," Mr. Boursier said. "I've come to know this company and its capabilities very well, and I am excited to now devote myself full time to growing Alliance Memory's business in the French market and beyond." Mr. Boursier is based in Brittany in Western France and can be reached at Didier@alliancememory.com.

Alliance Memory Achieves 1,000 Design Registrations Milestone

Nathan — Mon, 11 Dec 2017 16:11:22 +0000

SAN CARLOS, Calif. — Dec. 11, 2017 — In a sign of growing recognition among distributors of its status as a key player, Alliance Memory has achieved more than 1,000 design registrations in a program begun late last year and is adding new registrations at a rate of more than 100 per month. The accomplishment also reflects the company's robust growth, which has accelerated with the addition to its portfolio of must-have memory ICs of a complete line of synchronous DRAMs (SDRAMs), DDR, DDR2, and DDR3 SDRAMs, and low-power/mobile DRAMs (LPDDR) — many of which are often in short supply elsewhere. "Alliance Memory has worked very hard to build our global distribution network and to be one of the manufacturers that our distributors value as a trusted partner," said TJ Mueller, Alliance Memory's vice president of marketing. "The success of our design registration program shows that this strategy is working. The process of tracking and following up with design registrations ensures that distributors are rewarded for the hard work they do in pursuit of design wins while at the same time providing Alliance Memory with much greater visibility of the applications and end products for which our products are being used. This helps us to be a better partner for our distributors and a better resource for the end customer." "While it's true distributors will often register more than one memory vendor for the same opportunity, our experience has been of winning out when other manufacturers lose their motivation to supply the DRAMs for which customers have come to depend on us," said Sue Macedo, Alliance Memory EMEA managing director. "With each passing month, this is more and more the case, as other vendors experience shortages of the memory ICs for which Alliance Memory has become an indispensable resource for manufacturers around the world." "I'm mindful every day of how our channel partners have contributed to our growth, and our design registration program helps us to give back in several ways. For example, by giving us an early indicator of which of our products are most popular, the program allows us to forecast demand better and plan farther ahead to order wafers and finished goods," said David Bagby, Alliance Memory's president and CEO. "It takes a distributor considerable time and effort to complete a registration submission, but our goal is to make that process pay off, not just with preferential pricing but also by helping us both to serve our customers better." Alliance Memory follows the Design Registration Best Practices recommended by the Electronic Components Industry Association.

Alliance Memory Expands Lineup of DDR3 and DDR3L SDRAMs With 512Mb x8 and x16 Devices in 78-Ball and 96-Ball FBGA Packages

Nathan — Wed, 03 Jan 2018 19:37:03 +0000

Alliance Memory Expands Lineup of DDR3 and DDR3L SDRAMs With 512Mb x8 and x16 Devices in 78-Ball and 96-Ball FBGA Packages SAN CARLOS, Calif. — Jan. 3, 2018 — Alliance Memory today announced that it has expanded the industry's widest offering of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs with new 512Mb x8 and x16 devices in the 78-ball and 96-ball FBGA packages, respectively. Featuring a DDR architecture, the SDRAMs provide extremely fast transfer rates of 1600Mbps and clock rates of 800MHz. "Very few suppliers offer 512Mb DDR3 and DDR3L SDRAMs, so we are excited to add them to our broad lineup, which also includes hard-to-find 8Gb devices," said TJ Mueller, Vice President of Marketing at Alliance Memory. "Furthermore, our new DDR3 and DDR3L SDRAMs are offered in the same FBGA packages as devices with densities from 512Mb to 8Gb, allowing our customers to easily switch if they require less memory." With minimal die shrinks, the devices released today provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions used in embedded systems, desktop and notebook computers, industrial metering applications, consumer electronics, and wireless base stations — eliminating the need for costly redesigns and part requalification. The 512Mb DDR3 SDRAMs operate from a single +1.5V (±0.075V) power supply, while the DDR3L SDRAMs operate from a single +1.35V power supply, with backward compatibility to 1.5V. The JEDEC-compliant devices are available in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges The DDR3 and DDR3L SDRAMs support sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free. Links to product datasheets and ordering information https://www.alliancememory.com/datasheets/as4c512m8d3a/ (AS4C512M8D3A) https://www.alliancememory.com/datasheets/as4c512m8d3la/ (AS4C512M8D3LA) https://www.alliancememory.com/datasheets/as4c512m16d3l/ (AS4C512M16D3L) Samples and production quantities of the new 512Mb DDR3 and DDR3L SDRAMs are available now, with lead times to eight weeks. Pricing for U.S. delivery starts at $1.75 per piece.

Alliance Memory Launches New 256Mb High-Speed CMOS SDRAMs in the 54-Pin TSOP II Package

Nathan — Wed, 17 Jan 2018 17:48:16 +0000

SAN CARLOS, Calif. — Jan. 17, 2018 — Alliance Memory today extended its offering of 256Mb high-speed CMOS SDRAMs with new x8 and x4 devices in the 54-pin 400-mil plastic TSOP II package. "Alliance Memory is the market's SDRAM leader, offering the broadest product lineup of any vendor, with densities from 16Mb to 512Mb in a wide range of configurations and packages," said TJ Mueller, Vice President of Marketing at Alliance Memory. "We are excited to add these new 256Mb devices to our portfolio, which complement our existing x16 and x32 parts." Internally configured as four banks of 32M x 8 bits and 64M x 4 bits, respectively, the AS4C32M8SA and AS4C64M4SA provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used for image storage and video buffering in consumer and industrial products, and wearables. The SDRAMs offer a synchronous interface, operate from a single +3.3V (± 0.3V) power supply, and are lead (Pb)- and halogen-free. The devices released today feature fast access time from clock down to 5.4 ns and clock rates to 166 MHz, and they are available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) operating temperature ranges. The SDRAMs offer programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. Device Specification Table:

Part number	Configuration	Temperature	Max. clock
AS4C32M8SA-7TCN	32Mx8	Commercial (0°C to +70°C)	143 MHz
AS4C32M8SA-7TCNTR*	32Mx8	Commercial (0°C to +70°C)	143 MHz
AS4C32M8SA-6TIN	32Mx8	Industrial (-40°C to +85°C)	166 MHz
AS4C32M8SA-6TINTR*	32Mx8	Industrial (-40°C to +85°C)	166 MHz
AS4C64M4SA-7TCN	64Mx4	Commercial (0°C to +70°C)	143 MHz
AS4C64M4SA-7TCNTR*	64Mx4	Commercial (0°C to +70°C)	143 MHz
AS4C64M4SA-6TIN	64MX4	Industrial (-40°C to +85°C)	166 MHz
AS4C64M4SA-6TINTR*	64MX4	Industrial (-40°C to +85°C)	166 MHz

*Tape and reel package Links to product datasheets and ordering information https://www.alliancememory.com/datasheets/AS4C32M8SA/ (AS4C32M8SA-7TCN and AS4C32M8SA-6TIN) https://www.alliancememory.com/datasheets/AS4C64M4SA/ (AS4C64M4SA-7TCN and AS4C64M4SA-6TIN) Samples and production quantities of the new SDRAMs are available now, with lead times of four to eight weeks for large orders. Pricing for U.S. delivery starts at $1.95 per piece.

Alliance Memory to Highlight SRAM and DRAM Memory ICs for Legacy and New Designs at Embedded World

Nathan — Thu, 08 Feb 2018 14:34:14 +0000

SAN CARLOS, Calif. — Feb. 8, 2018 — Alliance Memory today announced it will be displaying its line of legacy SRAM, DRAM, and SDRAM ICs at Embedded World 2018 within the Avnet Silica booth in Hall 1, 1-370, Feb. 27 - March 1 at the Nuremberg, Germany Exhibition Centre. Alliance Memory's products, which are aimed at both legacy and new designs, include high-speed synchronous DRAMs (SDRAM) and mobile low-power DDR and DDR2 devices featuring a wide range of densities, configurations, package options, and temperature ratings Alliance Memory's ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics products requiring high memory bandwidth, and they are particularly well-suited to high-performance PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources. "We look forward to meeting with our distributors and customers at Embedded World," said Sue Macedo, Alliance Memory's EMEA managing director. "Alliance Memory has its highest market share in Europe, so we particularly value the opportunity to be a part of this key trade show for the EMEA market." Alliance Memory President and CEO David Bagby will also be attending Embedded World. To request an appointment with Mr. Bagby or Ms. Macedo, please send an email to sue[at]alliancememory.com.

Alliance Memory Appoints Tom Gargan as Director of Sales

Nathan — Thu, 22 Mar 2018 17:53:53 +0000

SAN CARLOS, Calif. — March 22, 2018 — Alliance Memory, a manufacturer of hard-to-find SRAM, DRAM, and SDRAM ICs, today announced the appointment of Tom Gargan as director of sales. In his new role, Mr. Gargan is expanding Alliance Memory's sales coverage in key areas of North America, including Canada, New England, and upstate New York. Prior to joining Alliance Memory, Mr. Gargan served in management roles at Future Electronics over the course of 18 years. Most recently, as global commodity manager, he was responsible for managing inventory worldwide, working closely with a Future Electronics purchasing team and manufacturers in Europe and Asia. "Tom brings an invaluable, customer-focused perspective to his job at Alliance Memory that will play a key role in forging relationships with OEMs as well as strengthening our ties with distributors, whose business he knows so well," said Alliance Memory President and CEO David Bagby. "He has exactly the experience and skills that are needed to let customers know that Alliance Memory is the solution they've been looking for when it comes to finding a reliable source for must-have SRAM, DRAM, and SDRAM chips that have been discontinued or put on allocation by our competitors." "Over more than 10 years, Alliance Memory has built a solid reputation throughout the industry for being the company you can rely on for the memory chips you desperately need," Mr. Gargan said. "I'm excited to be taking that message to customers in Canada and the U.S. northeast while driving the profitable revenue growth that will enable Alliance Memory to expand even further the range of solutions it can offer to customers." Mr. Gargan is based in Montreal and reports to Mr. Bagby. He can be reached at Tom@alliancememory.com.

Alliance Memory Expands Low-Power SDRAM Portfolio; Offers LPSDR, LPDDR, and LPDDR2 Devices in Wide Range of Densities and Package Options

Nathan — Tue, 08 May 2018 15:34:23 +0000

SAN CARLOS, Calif. —May 8, 2018 — Alliance Memory, a manufacturer of hard-to-find SRAM, DRAM, and SDRAM ICs, today announced that its SDRAM portfolio now features a wide variety of components that combine low power consumption with power-saving features to extend battery life in mobile devices. Alliance Memory's lineup of high-speed CMOS mobile low-power SDRAMs includes SDR (LPSDR), double data rate (LPDDR), and DDR2 (LPDDR2)devices. Featuring power consumption of 1.8V, the company’s LPSDR SDRAMs are available in densities of 128Mb, 256Mb, and 512Mb in 54-ball and 90-ball FBGA packages. LPDDR devices feature power consumption from 1.7V to 1.95V and densities of 256Mb, 512Mb, 1Gb, and 2Gb in the 60-ball and 90-ball FBGA packages. Enabling ultra-slim designs, LPDDR2 SDRAMs offer power consumption of 1.2V/1.8V and densities of 1Gb, 2Gb, and 4Gb in the 134-ball FBGA package. For designers of mobile devices tasked with providing more functionality in tighter spaces while using less power, Alliance Memory’s low-power SDRAMs offer a variety of power-saving features, including auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required. “With the Internet of Things and proliferation of mobile devices in the consumer, industrial, and medical spaces, we’ve committed ourselves over the past few years to solidifying our offering of low-power ICs,” said David Bagby, Alliance Memory president and CEO. “It began with the introduction of our LPSDR SDRAMs in 2014, followed by our LPDDR devices in 2016, and LPDDR2 SDRAMs in 2017. Now we offer a complete low-power portfolio in a wide range of densities and package options to meet the high demand for these parts.” Low-power SDRAMs from Alliance Memory include:

Type	Part number	Density
SDR	AS4C8M16MSA-6BIN AS4C4M32MSA-6BIN	128Mb
	AS4C16M16MSA-6BIN AS4C8M32MSA-6BIN	256Mb
	AS4C32M16MSA-6BIN AS4C16M32MSA-6BIN	512Mb
DDR	AS4C16M16MD1-6BCN	256Mb
	AS4C32M16MD1A-5BCN AS4C16M32MD1-5BCN AS4C16M32MD1-5BIN	512Mb
	AS4C64M16MD1A-5BIN AS4C32M32MD1A-5BIN	1Gb
	AS4C64M32MD1-5BCN AS4C64M32MD1-5BIN	2Gb
DDR2	AS4C64M16MD2A-25BIN AS4C32M32MD2A-25BIN	1Gb
	AS4C128M16MD2A-25BIN AS4C64M32MD2A-25BIN	2Gb
	AS4C128M32MD2A-25BIN AS4C128M32MD2A-18BIN	4Gb

Alliance Memory Offers Readily Available AS6C62256 Low-Power SRAM Drop-In Replacements for CY62256

Nathan — Wed, 27 Jun 2018 15:35:52 +0000

SAN CARLOS, Calif. —June 27, 2018 — Alliance Memory, a manufacturer of hard-to-find SRAM, DRAM, and SDRAM ICs, today announced that it is offering low-power SRAMs (LPSRAMs) that are direct replacements for CY62256 series devices for which Cypress Semiconductor Corporation has issued a product termination notification with a last-time buy date of July 4, 2018. CY62256 Series Cross-Reference Table

Original Part Number	Alliance Memory Direct Replacement
CY62256NLL-55SNXI	AS6C62256-55SIN
CY62256NLL-55SNXIT	AS6C62256-55SINTR
CY62256NLL-70SNXC	AS6C62256-55SIN
CY62256NLL-70SNXCT	AS6C62256-55SINTR
CY62256VNLL-70NXI	AS6C62256-55SIN
CY62256VNLL-70SNXIT	AS6C62256-55SINTR

“The CY62256 series is a mainstream SRAM product that is still used by thousands of customers throughout the world,” said David Bagby, president and CEO at Alliance Memory. “Making products like these available after they’ve been discontinued by other manufacturers is our mission at Alliance Memory, and we’re committed to producing these particular low-power SRAM devices for many years into the future.” Samples and production quantities of the Alliance Memory AS6C62256-55SIN and AS6C62256-55SINTR are available now with lead times of stock to six weeks. To check stock at distributors such as Digi-Key, Mouser, and Future, visit https://www.alliancememory.com/inventory/?partno=AS6C62256.

Alliance Memory to Offer Discontinued Cypress Semiconductor CY62256 Low Power SRAMs With Original Part Numbers Into 2019

Nathan — Tue, 09 Oct 2018 15:19:26 +0000

SAN CARLOS, Calif. — Oct. 9, 2018 —Alliance Memory today announced that it is collaborating with Cypress Semiconductor Corporation to help ensure ongoing availability of some of the CY62256 series devices for which Cypress issued a product discontinuation notification with a last-time buy date of July 4, 2018. Pursuant to an arrangement between the companies, Alliance Memory will offer the popular devices with their original Cypress part numbers into 2019. "Cypress is working with Alliance Memory to minimize the impact of the EOL for this widely used 32k x 8 SRAM," said Sidharth PK, marketing director for Cypress' random access memory business unit. "We are pleased that Alliance Memory is prepared to continue to support our customers for this device with minimal interruptions." "By continuing to offer the CY62256 devices with their original part numbers, we can help ensure that Cypress customers for these devices will continue to be supported after the LTB date and into 2019," said David Bagby, president and CEO of Alliance Memory.

New Alliance Memory High-Speed CMOS PSRAMs Offer Densities From 8Mb to 128Mb in 48-Ball and 49-Ball FPBGA Packages

Nathan — Wed, 24 Oct 2018 15:01:27 +0000

SAN CARLOS, Calif. —Oct. 24, 2018 — Alliance Memory today introduced a new family of high-speed CMOS pseudo SRAMs (PSRAMs) with densities from 8Mb to 128Mb in 6.0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm by 4.0 mm by 1.0 mm 49-ball FPBGA packages. The devices combine the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions for wireless, automotive, networking, and industrial applications. Featuring high-density DRAM cores with SRAM interfaces and on-chip refresh circuits for refresh-free operation, the devices released today provide the high bandwidth and the low power necessary to replace SRAMs in portable electronics such as mobile phones and PDAs, or to serve as companion chips to burst NOR Flash applications. The interfaces of the AS1C1M16PL-70BIN, AS1C1M16P-70BIN, AS1C2M16P-70BIN, AS1C512K16PL-70BIN,and AS1C512K16P-70BIN are compatible with asynchronous type SRAMs. The AS1C4M16PL-70BIN and AS1C8M16PL-70BIN CellularRAM PSRAMs feature a multiplexed address/data bus for greater bandwidth. The devices support asynchronous and burst operation, and feature read or write burst lengths of 4, 8, 16, or 32 words, or continuous burst. Available in industrial temperature ranges, the PSRAMs offer fast access speeds of 70s and operate from a single power supply of 1.7V to 1.95V or 2.6V to 3.3V. Additional power-saving features include auto temperature-compensated self-refresh (ATCSR), partial array self-refresh (PASR), and a deep power down (DPD) mode. Device Specification Table:

Part number	Density	Organization	V_CCRange (V)	Temp. (°C)	Package
AS1C512K16PL-70BIN	8Mb	512K x 16	1.7 to 1.95	-30 to +85	48-ball FPBGA
AS1C512K16P-70BIN	8Mb	512K x 16	2.6 to 3.3	-30 to +85	48-ball FPBGA
AS1C1M16PL-70BIN	16Mb	1M x 16	1.7 to 1.95	-40 to +85	48-ball FPBGA
AS1C1M16P-70BIN	16Mb	1M x 16	2.6 to 3.3	-40 to +85	48-ball FPBGA
AS1C2M16P-70BIN	32Mb	2M x 16	2.6 to 3.3	-40 to +85	48-ball FPBGA
AS1C4M16PL-70BIN	64Mb	4M x 16	1.7 to 1.95	-30 to +85	49-ball FPBGA
AS1C8M16PL-70BIN	128Mb	8M x 16	1.7 to 1.95	-30 to +85	49-ball FPBGA

Samples and production quantities of the new PSRAMs will be available in November 2018, with lead times of eight weeks. Pricing for U.S. delivery only starts at $1.15.

Alliance Memory Releases New x8, x16, and x32 512Mb Monolithic CMOS SDRAMs in 54-Pin and 86-Pin TSOP II Packages

Nathan — Tue, 06 Nov 2018 17:05:07 +0000

SAN CARLOS, Calif. —Nov. 6, 2018 — Alliance Memory today extended its offering of 512Mb high-speed CMOS SDRAMs with new monolithic 64M x 8 (AS4C64M8SC-7TIN) and 32M x 16 (AS4C32M16SC-7TIN) devices in the 54-pin 400-mil plastic package, and a 16M x 32 (AS4C16M32SC-7TIN) device in the 86-pin TSOP II package. The new SDRAMs are among the products Alliance Memory will feature next week at electronica 2018 in Stand B5 526. Featuring a LVTTL interface, the SDRAMs released today operate from a single +3.3-V (± 0.3 V) power supply, feature a power down mode to lower power consumption, and offer a data mask for read/write control. The devices feature fast clock rates to 133 MHz and are available in an industrial temperature range of -40 °C to +85 °C. Fully synchronous with the positive clock edge, the AS4C64M8SC-7TIN, AS4C32M16SC-7TIN, and AS4C16M32SC-7TIN deliver faster performance than DRAMs in general-purpose computing, medical, industrial, point-of-sale, automotive, and telecom applications requiring high memory bandwidth. With minimal die shrinks, they can provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in these applications, eliminating the need for costly redesigns and part requalification. The SDRAMs support sequential and interleave burst types with read or write burst lengths of 1, 2, 4, 8, or full page. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance. The devices are lead (Pb)- and halogen-free. Samples and production quantities of the new SDRAMs are available now, with lead times of eight weeks for large orders. Pricing for U.S. delivery starts at $8.40 per piece.

Alliance Memory to Showcase Latest PSRAMs, Mobile Low-Power SDRAMs, and Must-Have SRAMs at electronica 2018

Nathan — Mon, 12 Nov 2018 13:43:42 +0000

SAN CARLOS, Calif. —Nov. 12, 2018 — Alliance Memory today announced its technology lineup for electronica 2018, taking place Nov. 13-16 at the Munich Trade Fair Centre in Munich, Germany. In Booth B5.526, the company will be highlighting its new family of high-speed CMOS pseudo SRAMs (PSRAMs) and the latest additions to its portfolio of mobile low-power SDRAMs, including SDR (LPSDR), double data rate (LPDDR), and DDR2 (LPDDR2) devices. The company will also showcase its offering of discontinued Cypress Semiconductor Corporation CY62256 low-power SRAMs. At electronica 2018, Alliance Memory will highlight PSRAMs with densities from 8Mb to 128Mb in 6.0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm by 4.0 mm by 1.0 mm 49-ball FPBGA packages. Combining the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions, the devices offer industrial temperature ranges and fast access speeds of 70s, and operate from a single power supply of 1.7V to 1.95V or 2.6V to 3.3V. Power-saving features include auto temperature-compensated self-refresh (ATCSR), partial array self-refresh (PASR), and a deep power down (DPD) mode. Alliance Memory will showcase LPSDR SDRAMs, which extend battery life in mobile devices by offering power consumption of 1.8 V and densities of 128Mb, 256Mb, and 512Mb in 54-ball and 90-ball FBGA packages. Highlighted LPDDR devices will feature power consumption from 1.7V to 1.95V and densities of 256Mb, 512Mb, 1Gb, and 2Gb in the 60-ball and 90-ball FBGA packages. Enabling ultra-slim designs, LPDDR2 SDRAMs on display will offer power consumption of 1.2V/1.8V and densities of 1Gb, 2Gb, and 4Gb in the 134-ball FBGA package. Alliance Memory is collaborating with Cypress Semiconductor Corporation to help ensure ongoing availability of some of the CY62256 series 32k x 8 SRAMs, offering them with their original part numbers into 2019. The company will showcase its offering at electronica 2018 in addition to its own direct replacement for the device: the AS6C62256family. Alliance Memory’s ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources. electronica is the world’s leading trade fair for components, systems, and applications. More information on the event is available at http://www.electronica.de/.

Alliance Memory Cuts Lead Times for Automotive Temperature DRAM Portfolio

Nathan — Mon, 07 Jan 2019 17:43:59 +0000

SAN CARLOS, Calif. — Jan. 7, 2019 —Alliance Memory today announced that it has greatly reduced lead times for its DRAMs with -40°C to +105°C automotive temperature ratings. Responding to customer demand, Alliance Memory now holds many parts in finished goods stock and in addition can promise lead times of just six weeks for its most popular automotive temperature range products. Alliance Memory offers a complete lineup of automotive temperature CMOS SDRAMs, including double data rate (DDR), DDR2, and DDR3 devices. The company's portfolio of SDRAMs in the automotive temperature range includes components with densities of 64 Mb, 128 Mb, and 256 Mb. Automotive DDR1 SDRAMs feature densities of 128 Mb, 256 Mb, and 512 Mb, while DDR2 devices are available in densities of 256 Mb, 512 Mb, and 1 G. Alliance Memory's 1-Gb, 2-Gb, and 4-Gb automotive DDR3 SDRAMs operate over 1.35-V and 1.5-V power supplies. Alliance Memory's automotive temperature DRAMs are AEC-Q100-compliant products for high-temperature-requirement applications, including Advanced Driving Assistance Systems (ADAS); powertrain; automotive active safety and autonomous driving; connectivity and in-vehicle-networking (IVN); carputers (customized PCs in cars); telematics; and infotainment systems. Alliance Memory automotive temperature products will be among the highlights at the company's Embedded World 2019 exhibit (Hall 3A, Stand 613), Feb. 26-28 in Nuremberg, Germany. A complete list of automotive memory solutions from Alliance Memory is available here: https://www.alliancememory.com/datasheets/automotive-memory-solutions/.

Micron EOL 8G DDR3L SDRAMs Now Available Direct From Alliance Memory; Last Chance for Monolithic Single-Die Solution

Nathan — Fri, 25 Jan 2019 16:35:18 +0000

SAN CARLOS, Calif. —Jan. 25, 2019 — Alliance Memory today announced that it is offering several end-of-life 8G DDR3L SDRAMs for which Micron Technology Inc. announced a last time buy date of Jan. 13, 2019. For three of the devices, the company is also offering versions with Alliance Memory part numbers that use the same genuine single-die Micron silicon as the Micron-numbered parts. The following Micron 8G DDR3L SDRAMs are now available from Alliance Memory:

Micron Part Number	Alliance Memory Identical Replacement
MT41K512M16HA-107:A	N/A
MT41K512M16HA-107 IT:A	N/A
MT41K512M16HA-125:A	AS4C512M16D3L-12BCN
MT41K1G8SN-125:A	AS4C1G8MD3L-12BCN
MT41K512M16HA-125 IT:A *	AS4C512M16D3L-12BIN

*Only available in Alliance Memory branded version. “We are committed to supporting our customers’ legacy SDRAM needs,” said David Bagby, president and CEO of Alliance Memory. “These are genuine Micron parts with Micron part numbers, and we’re pleased to be extending their life cycle by making them available from Alliance Memory.”

Alliance Memory to Highlight Automotive and Mobile Low-Power SDRAMs, PSRAMs, and EOL ICs in Embedded World Debut

Nathan — Thu, 21 Feb 2019 15:24:41 +0000

SAN CARLOS, Calif. — Feb. 21, 2019 —Alliance Memory today announced its technology lineup for Embedded World 2019, taking place Feb. 26-28 at the Exhibition Centre in Nuremberg, Germany. Exhibiting at the trade fair for the first time (Hall 3A, Stand 613), the company will highlight its extensive line of automotive temperature SDRAMs, high-speed pseudo SRAMs (PSRAMs), and the latest additions to its portfolio of mobile low-power SDRAMs, including SDR (LPSDR), double data rate (LPDDR), and DDR2 (LPDDR2) devices. Alliance Memory will also showcase its offering of discontinued Cypress Semiconductor CY62256 low-power SRAMs and end-of-life MT41K512M16 8G DDR3L SDRAMs from Micron Technology. At Embedded World 2019, Alliance Memory will showcase its complete lineup of automotive temperature CMOS SDRAMs, including double data rate (DDR), DDR2, and DDR3 devices in a wide range of densities. The AEC-Q100-compliant DRAMs are optimized for high temperature requirement applications, including Advanced Driving Assistance Systems (ADAS); powertrain; automotive active safety and autonomous driving; connectivity and in-vehicle-networking (IVN); carputers (customized PCs in cars); telematics; and infotainment systems. For wireless, automotive, networking, and industrial applications, highlighted PSRAMs feature densities from 8Mb to 128Mb in 6.0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm by 4.0 mm by 1.0 mm 49-ball FPBGA packages. The devices offer industrial temperature ranges and fast access speeds of 70s. They operate from a single power supply of 1.7V to 1.95V or 2.6V to 3.3V. Power-saving features for the PSRAMs include auto temperature-compensated self-refresh (ATCSR), partial array self-refresh (PASR), and a deep power down (DPD) mode. To extend battery life in mobile devices, the LPSDR SDRAMs that Alliance Memory will feature at Embedded World 2019 offer power consumption of 1.8V and densities of 128Mb, 256Mb, and 512Mb in 54-ball and 90-ball FBGA packages. Highlighted LPDDR devices feature power consumption from 1.7V to 1.95V and densities of 256Mb, 512Mb, 1Gb, and 2Gb in the 60-ball and 90-ball FBGA packages. Enabling ultra-slim designs, LPDDR2 SDRAMs on display offer power consumption of 1.2V/1.8V and densities of 1Gb, 2Gb, and 4Gb in the 134-ball FBGA package. Alliance Memory is collaborating with Cypress Semiconductor Corporation to help ensure ongoing availability of some of the CY62256 series 32k x 8 SRAMs, offering them with their original part numbers. Alliance Memory will showcase this offering at Embedded World 2019, in addition to its own direct replacement for the devices: the AS6C62256 family. Alliance Memory is also offering several end-of-life 8G DDR3L SDRAMs for which Micron Technology announced a last-time buy date of Jan. 13, 2019. The MT41K512M16 devices will be on display, along with versions for three of the ICs featuring Alliance Memory part numbers and the same genuine single-die Micron silicon as the Micron-numbered parts. Alliance Memory's ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics products. The devices eliminate costly redesigns by providing long-term EOL components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources.

Alliance Memory Announces New Dual-Die 8Gb DDR3L SDRAMs in 78-Ball and 96-Ball FBGA Packages; Devices Provide Drop-in Replacement for Micron EOL Single-Die 8Gb DDR3L SDRAMs

Nathan — Thu, 25 Apr 2019 15:28:59 +0000

SAN CARLOS, Calif. —April 25, 2019 — Alliance Memory today introduced new dual-die 8Gb DDR3L SDRAMs that are pin-for-pin drop-in replacements for and fully compatible with end-of-life, single-die 8Gb DDR3Ls from Micron Technology Inc.

Alliance Memory Part Number	Configuration	Package Type
AS4C1G8D3LA	8 banks x 128M x 8	78-ball FBGA
AS4C512M16D3LA	8 banks x 64M x 16	96-ball FBGA

“When Micron announced a last-time buy date for some of its most popular 8Gb DDR3L single-die SDRAMs, we responded by offering the original Micron part numbers, along with Alliance Memory identical replacements of the monolithic devices,” said David Bagby, president and CEO of Alliance Memory. “In keeping with our commitment to supporting our customers’ legacy SDRAM needs, we’re excited to now announce the immediate availability of dual-die-package 8Gb DDR3L SDRAMs for long-term support and new designs.” Featuring a DDR architecture, the AS4C1G8D3LA and AS4C512M16D3LAprovide speed of 10ns, extremely fast data rates of 1866Mbps, and clock rates of 933MHz. Operating from a single +1.35V power supply, with backward compatibility to 1.5V, the SDRAMs are optimized for main memory applications in laptops, desktops, servers, and embedded / industrial designs. The devices are available in commercial (0°C to +95°C), industrial (-40°C to +95°C), and automotive (-40°C to +105°C) temperature ranges. The AS4C1G8D3LA and AS4C512M16D3LAsupport sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free. Learn more about Alliance Memory’s offering of single- and dual-die 8Gb DDR3L SDRAMs at https://www.alliancememory.com/micron-eol-8g-ddr3l-sdrams-now-available-direct-from-alliance-memory/. Samples and production quantities of the dual-die AS4C1G8D3LA and AS4C512M16D3LAare available now, with lead times of six to eight weeks. Pricing depends on density, configuration, and order size.

Alliance Memory’s Low-Power SDRAM Portfolio Continues to Grow With the Addition of New 256Mb LPDDR2 Devices in 134-Ball and 168-Ball FBGA Packages

Nathan — Fri, 03 May 2019 14:27:36 +0000

SAN CARLOS, Calif. —May 3, 2019 — Alliance Memory today announced that the company’s portfolio of low-power SDRAMs for mobile and embedded systems in the automotive, consumer, industrial, and medical spaces continues to grow. The latest additions include two new 256Mb LPDDR2 devices: the AS4C8M32MD2A-25B2CN and AS4C8M32MD2A-25BCN. “We’re committed to providing our customers with a complete offering of SDRAMs that combine low power consumption with power-saving features to extend battery life in mobile devices,” said David Bagby, Alliance Memory president and CEO. “From wearables to ADAS systems, our portfolio features a variety of densities and package options — now including 256Mb LPDDR2 devices in the 134-ball and 168-ball FBGA packages — to meet the needs of a wide range of applications.” Alliance Memory's lineup of high-speed CMOS mobile low-power SDRAMs includes SDR (LPSDR), double data rate (LPDDR), and DDR2 (LPDDR2)devices. Featuring power consumption of 1.8V, the company’s LPSDR SDRAMs are available in densities of 128Mb, 256Mb, and 512Mb in 54-ball and 90-ball FBGA packages. LPDDR devices feature power consumption from 1.7V to 1.95V and densities of 256Mb, 512Mb, 1Gb, and 2Gb in the 60-ball and 90-ball FBGA packages. Enabling ultra-slim designs, LPDDR2 SDRAMs offer power consumption of 1.2V/1.8V and densities of 256Mb, 1Gb, 2Gb, and 4Gb in the 134-ball and 168-ball FBGA packages. For designers of mobile devices tasked with providing more functionality in tighter spaces while using less power, Alliance Memory’s low-power SDRAMs offer a variety of power-saving features, including auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required. Low-power SDRAMs from Alliance Memory include:

Type	Part number	Density
SDR	AS4C8M16MSA-6BIN AS4C4M32MSA-6BIN	128Mb
	AS4C16M16MSA-6BIN AS4C8M32MSA-6BIN	256Mb
	AS4C32M16MSA-6BIN AS4C16M32MSA-6BIN	512Mb
DDR	AS4C16M16MD1-6BCN	256Mb
	AS4C32M16MD1A-5BCN AS4C16M32MD1-5BCN AS4C16M32MD1-5BIN	512Mb
	AS4C64M16MD1A-5BIN AS4C32M32MD1A-5BIN	1Gb
	AS4C64M32MD1-5BCN AS4C64M32MD1-5BIN	2Gb
DDR2	AS4C8M32MD2A-25B2CN AS4C8M32MD2A-25BCN	256Mb
	AS4C64M16MD2A-25BIN AS4C32M32MD2A-25BIN	1Gb
	AS4C128M16MD2A-25BIN AS4C64M32MD2A-25BIN	2Gb
	AS4C128M32MD2A-25BIN AS4C128M32MD2A-18BIN	4Gb

Alliance Memory Introduces New Line of 5V Parallel NOR Flash Memory Solutions; Providing Reliable Code and Data Storage, Boot and Uniform Sectored Devices Offer Fast 55ns Access Times and Densities From 1M to 16M

Nathan — Thu, 12 Sep 2019 15:00:39 +0000

SAN CARLOS, Calif. —Sept. 12, 2019 — Alliance Memory today announced that the company has bolstered its product offering with a new line of 5V parallel NOR Flash memory products in boot and uniform sectored architectures. Available in densities from 1M to 16M, the devices offer access times of 55ns to enable fast, low-latency read speeds, allowing for both direct code execution and data storage in a single memory product. Offering reliable, long-term performance for embedded systems, the NOR Flash devices released today feature a minimum of 100,000 program/erase cycles per sector and offer 20-year data retention at +125°C. With their fast boot times, the solutions are ideal for high-performance applications such as digital still cameras (DSC and DSLR), in addition to process-intensive networking routers and switches, home gateways, set-top boxes (STBs), automotive infotainment systems, industrial robotics, and medical electronics. The devices’ flexible sector architectures allow any combination of sectors to be erased and reprogrammed without affecting the content of other sectors — ensured by a hardware protection feature that prevents inadvertent program or erase operations. An Embedded Program algorithm automatically writes and verifies bytes at specified addresses, while an Embedded Erase algorithm automatically erases and verifies the entire chip or designated sectors. The products operate over an industrial temperature range of -40°C to +85°C and offer 20mA typical active read currents and 30mA typical program/erase currents. In standby mode, power consumption is reduced to as low as 1μA. Uniform sector devices are available in the 32-pin PLCC package, while boot devices — in top or bottom block configurations — are available in the 48-pin TSOP I package. Each part can also be programmed in standard EPROM programmers. All devices are lead (Pb)-free and RoHS 2.0 compliant. Device Specification Table:

Part number	Density	Architecture	Configuration	VCC	Package
AS29CF010-55CCIN	1M	Uniform sector	128K x 8	5V	32-pin PLCC
AS29CF040-55CCIN	4M	Uniform sector	512K x 8	5V	32-pin PLCC
AS29CF800T-55TIN	8M	Top boot	1M x 8 / 512K x 16	5V	48-pin TSOP I
AS29CF800B-55TIN	8M	Bottom boot	1M x 8 / 512K x 16	5V	48-pin TSOP I
AS29CF160T-55TIN	16M	Top boot	2M x 8 / 1M x 16	5V	48-pin TSOP I
AS29CF160B-55TIN	16M	Bottom boot	2M x 8 / 1M x 16	5V	48-pin TSOP I

Samples of the 5V parallel NOR Flash memory products are available now. Production quantities will be available in October 2019, with lead times of six to eight weeks. Pricing for U.S. delivery varies by density and ranges from $2.25 to $2.30 for 1M; $3.40 to $3.50 for 4M; $4.35 to $4.50 for 8M; and $5.05 to $5.20 for 16M.

Alliance Memory Bolsters Product Lineup With New 4Gb High-Speed CMOS DDR4 SDRAMs; Devices Combine Low 1.2V Power Consumption With Fast Data Transfer Rates to 2400Mbps/pin and 2666Mbps/pin for Increased Efficiency and Performance

Nathan — Mon, 14 Oct 2019 12:12:18 +0000

SAN CARLOS, Calif. — Oct. 11, 2019 — Alliance Memory today announced that it has expanded its product offering with a new line of high-speed CMOS DDR4 SDRAMs. For improved performance over previous-generation DDR3 devices, the 4Gb AS4C256M16D4 and AS4C512M8D4 offer lower power consumption and faster data transfer rates in 96-ball and 78-ball FBGA packages respectively. Compared to DDR3 SDRAMs, the devices released today reduce operating voltages from 1.5V to +1.2V (±0.06V) to increase battery life in portable electronics such as notebook computers, smartphones, and tablets. For increased efficiency and performance in desktop computers and servers, the 256Mb x 16-bit AS4C256M16D4 and 512M x 8-bit AS4C512M8D4 offer up to 16 memory banks and deliver faster clock speeds to 1333MHz for extremely high transfer rates of 2400Mbps/pin (1200MHz) and 2666Mbps/pin (1333MHz). With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in extended commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges, the devices are ideal for the industrial, medical, IoT, automotive, gaming, and consumer markets. The AS4C256M16D4 and AS4C512M8D4 support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. JEDEC- and RoHS-compliant, the devices are lead (Pb)- and halogen-free. Device Specification Table:

Part #	Density	Organization	Package	Temp. range (°C)
AS4C256M16D4-83BCN	4Gb	256Mb x 16	96-ball FBGA	0 to +95
AS4C256M16D4-83BCNTR*	4Gb	256Mb x 16	96-ball FBGA	0 to +95
AS4C256M16D4-83BIN	4Gb	256Mb x 16	96-ball FBGA	-40 to +95
AS4C256M16D4-83BINTR*	4Gb	256Mb x 16	96-ball FBGA	-40 to +95
AS4C256M16D4-75BCN	4Gb	256Mb x 16	96-ball FBGA	0 to +95
AS4C256M16D4-75BCNTR*	4Gb	256Mb x 16	96-ball FBGA	0 to +95
AS4C256M16D4-75BIN	4Gb	256Mb x 16	96-ball FBGA	-40 to +95
AS4C256M16D4-75BINTR*	4Gb	256Mb x 16	96-ball FBGA	-40 to +95
AS4C512M8D4-83BCN	4Gb	512Mb x 8	78-ball FBGA	0 to +95
AS4C512M8D4-83BCNTR*	4Gb	512Mb x 8	78-ball FBGA	0 to +95
AS4C512M8D4-83BIN	4Gb	512Mb x 8	78-ball FBGA	-40 to +95
AS4C512M8D4-83BINTR*	4Gb	512Mb x 8	78-ball FBGA	-40 to +95
AS4C512M8D4-75BCN	4Gb	512Mb x 8	78-ball FBGA	0 to +95
AS4C512M8D4-75BCNTR*	4Gb	512Mb x 8	78-ball FBGA	0 to +95
AS4C512M8D4-75BIN	4Gb	512Mb x 8	78-ball FBGA	-40 to +95
AS4C512M8D4-75BINTR*	4Gb	512Mb x 8	78-ball FBGA	-40 to +95

*Reel packaging Samples of the new 4Gb DDR4 SDRAMs are available now. Production quantities will be available in November 2019, with lead times of eight weeks. Pricing for U.S. delivery starts at $3.00 per piece.

Alliance Memory Appoints Ramesh Varadharajan as India Country Manager

Nathan — Tue, 22 Oct 2019 12:31:00 +0000

SAN CARLOS, Calif. — Oct. 22, 2019 — Alliance Memory today announced the appointment of Ramesh Varadharajan as the country head of the company's India sales. In his new role, Mr. Varadharajan will focus on expanding Alliance Memory's sales coverage in the dynamic Indian market and lead the company's global engineering and quality teams. Mr. Varadharajan brings over 20 years of experience across a number of semiconductor markets to Alliance Memory, specializing in product and test engineering; silicon validation across memory; and mixed signal, RF, and IoT products. Prior to joining the company, he served in engineering management roles at Silicon Laboratories Singapore and SpectraLinear India. He also served as lead product and test engineer at Alliance Semiconductor from 2000 to 2005. He holds a Master of Science degree in microelectronics from Birla Institute of Technology and Science, India. "With his wealth of experience in the semiconductor industry, deep knowledge of the Indian market, and background in engineering management, Ram will be instrumental in expanding our presence in India and driving our engineering efforts worldwide," said David Bagby, President and CEO of Alliance Memory. "Furthermore, his experience at Alliance Semiconductor gives him exceptional insight into our product line, making him an invaluable asset. We couldn't be more excited to welcome him to the Alliance Memory team." "Alliance Memory is rapidly expanding its market share and product portfolio, and it has established a solid reputation throughout the industry for being the company you can rely on for the memory chips you need," said Mr. Varadharajan. "I'm excited to join the company and look forward to the challenges of expanding its customer base in India while driving global engineering teams that will enable Alliance Memory to further expand its product offering for customers worldwide." Mr. Varadharajan is based in Bangalore, India, and reports to David Bagby. He can be reached at Ram@alliancememory.com.

Alliance Memory Confirms Plans to Exhibit ICs at Embedded World 2020

Teresa — Mon, 24 Feb 2020 18:07:27 +0000

KIRKLAND, Wash. — Feb. 20, 2020 — Alliance Memory today confirmed that it will exhibit its SRAMs, DRAMs and flash memory ICs for legacy and new designs at Embedded World 2020, taking place Feb. 25-27 in Nuremberg, Germany. “While we’re concerned about the COVID-19 situation, our business remains buoyant and we’re looking forward to connecting with our customers from around the globe at Embedded World in Nuremberg,” said David Bagby, Alliance Memory president and CEO. “We’re grateful that Alliance Memory has seen no major impact at all in our production and supply chain, which is based predominantly in Taiwan.” Addressing both legacy and new designs in industrial, automotive, medical, communications, telecom, and consumer electronics, Alliance Memory distinguishes itself by providing long-term support for end-of-life (EOL) components and by minimizing or eliminating die shrinks, which frees up engineering resources for the company’s customers. In Hall 3, Stand 318 at Embedded World, Alliance Memory will highlight its SRAM, pseudo SRAM, NOR Flash, and DRAM memory ICs for embedded platforms, including:

New 4Gb High-Speed CMOS DDR4 SDRAMs

Alliance Memory has expanded its product offering with a new line of high-speed CMOS DDR4 SDRAMs. For improved performance over previous-generation DDR3 devices, the 4Gb AS4C256M16D4 and AS4C512M8D4 offer lower power consumption and faster data transfer rates in 96-ball and 78-ball FBGA packages respectively. Link to product listing Link to product photos

New 5V Parallel NOR Flash Memory Solutions

Alliance Memory’s new line of 5V parallel NOR Flash memory products in boot and uniform sectored architectures offers reliable, long-term performance for embedded systems. Available in densities from 1M to 16M, the devices offer access times of 55ns for high-performance applications like digital still cameras, in addition to process-intensive networking routers and switches, home gateways, set-top boxes (STB), automotive infotainment systems, industrial robotics, and medical electronics. Link to product listing Link to product photos

Micron 8G MT41K512M16HA-125 IT:A 8G DDR3L Available from Alliance Memory

Users of Micron MT41K512M16HA-125 IT:A 8G DDR3L SDRAMs, for which the last time buy date was January 13, 2019, can now purchase the same device from Alliance Memory under part number AS4C512M16D3L-12BIN. This is one of three Micron DDR3L SDRAMs for which Alliance Memory is offering identical replacements. In addition, Alliance Memory is offering several Micron Technologies DDR3L SDRAMs under their original part numbers. Link to product listing Link to product photos

Alliance Memory COVID-19 Update: Operations Continue Without Disruption; Company Delivering SRAMs and DRAMs to Medical Customers With Normal Lead Times

Nathan — Wed, 15 Apr 2020 15:53:23 +0000

KIRKLAND, Wash. — April 15, 2020 — Alliance Memory today announced that the company's operations are continuing without disruption during the COVID-19 outbreak. For its customers in the medical market, Alliance Memory's SRAM and DRAM products — key components in a wide range of medical equipment — are being delivered from stock or with normal lead times. "The coronavirus pandemic is having no appreciable effect on our operations," said David Bagby, president and CEO of Alliance Memory. "Continuation of our production is secured based on sufficient stock and deliveries, while our employees are either working from home or on-site in teams and shifts and following government guidelines by keeping the obligatory social distance and avoiding direct person-to-person contact. Our Taiwan office and test and assembly partners are operating normally, and customer consulting and support are also available. As a result, our medical ICs for critical medical equipment are being delivered as usual, allowing our customers to continue providing their life-sustaining solutions around the world." Alliance Memory supplies SRAMs and DRAMs to customers in all facets of the medical industry. Typical end products include ventilators; lasers; ultrasound, physiotherapy, cardiology, and radiology technologies; CPAP machines; molecular, in-vitro, and blood gas diagnostic testing equipment; X-ray systems; PEC/CT scanners; pulse oximetry and airway clearance devices; defibrillators; blood pressure monitors; incubators; and more.

Alliance Memory Relocates Headquarters to Kirkland, Washington

Nathan — Fri, 10 Jan 2020 13:33:32 +0000

KIRKLAND, Wash. — Jan. 10, 2020 — Alliance Memory today announced the company has moved its headquarters and USA warehouse facility from California to Kirkland, Washington, near Seattle. The company’s new address and phone/fax numbers are Alliance Memory Inc. 12815 NE 124th St., Suite D Kirkland, WA 98034, USA Tel: +1 (425) 898-4456 Fax: +1 (425) 896-8628 “With this move, we have expanded our warehouse capacity and introduced a more streamlined and efficient logistics center,” said David Bagby, Alliance Memory president and CEO. “2019 was actually a great year for Alliance Memory, as we continued to broaden our offering of well-designed and competitively priced products and to grow our organization in ways that will directly benefit our customers. We’re bringing that positive outlook to our planning for 2020, during which we plan to introduce some new categories of products while extending the product lines that are already coming to the rescue for so many customers.” The company invites any questions about the move to be directed to Sue Macedo, sue@alliancememory.com.

Micron M29F 5V Parallel NOR Flash Products Now Available Direct From Alliance Memory

Nathan — Thu, 10 Sep 2020 15:38:11 +0000

KIRKLAND, Wash. — Sept. 10, 2020 — Alliance Memory today announced that the company is now an authorized reseller for Micron's M29F 5V parallel NOR Flash devices, which Micron previously discontinued with product change notification #32160 (last time buy: March 2018). Micron is continuing to produce these devices for Alliance Memory and intends to only supply Alliance Memory for any new orders placed through mid-2021. Micron's M29F devices are compatible with industry AM29F and MX29F devices, and a technical note is available from Micron's website detailing how to migrate from AM29F devices to M29F devices. "We are committed to meeting our customers' legacy component needs and have had great success working with Micron to provide continued support for a variety of devices, including 512Mb SDRAMs and 8Gb DDR3L SDRAMs," said David Bagby, president and CEO of Alliance Memory. "We're looking forward to continuing that success with these M29F NOR Flash parts, which will provide our customers with a steady supply of 5V parallel NOR Flash for a minimum of two more years." "Micron is pleased to work with Alliance Memory to provide loyal customers of our M29F NOR Flash products with a trusted source for supply beyond our stated PCN last-time shipment date," said Richard De Caro, director of NOR Flash and emerging memory solutions of the Embedded Business Unit at Micron. "We value our customers, and we always strive to find solutions that provide supply flexibility and longevity." The following Micron-made M29F 5V NOR Flash parts are now available directly from Alliance Memory:

Part number	Density	Boot type	Configuration, speed, package option, temperature range, and shipping option
M29F200FB55M3F2	2Mb	Bottom	256K x 8, 128K x 16, parallel, 55ns, 44-pin SOP, Automotive grade 3 (-40°C~125°C), tape & reel
M29F400FB55M3F2	4Mb	Bottom	512K x 8, 256K x 16, parallel, 55ns, 44-pin SOP, Automotive grade 3 (-40°C~125°C), tape & reel
M29F400FB55N3E2	4Mb	Bottom	512K x 8, 256K x 16, parallel, 55ns, 48-pin TSOP, Automotive grade 3 (-40°C~125°C), tray
M29F400FB55N3F2	4Mb	Bottom	512K x 8, 256K x 16, parallel, 55ns, 48-pin TSOP, Automotive grade 3 (-40°C~125°C), tape & reel
M29F400FT5AN6E2	4Mb	Top	512K x 8, 256K x 16, parallel, 55ns, 48-pin TSOP, Automotive grade 6 (-40°C~85°C), tray
M29F800FB5AN6E2	8Mb	Bottom	1M x 8, 512K x 16, parallel, 55ns, 48-pin TSOP, Automotive grade 6 (-40°C~85°C), tray
M29F800FB5AN6F2	8Mb	Bottom	1M x 8, 512K x 16, parallel, 55ns, 48-pin TSOP, Automotive grade 6 (-40°C~85°C), tape & reel
M29F800FB55M3F2	8Mb	Bottom	1M x 8, 512K x 16, parallel, 55ns, 44-pin SOP, Automotive grade 3 (-40°C~125°C), tape & reel
M29F800FT55N3E2	8Mb	Top	1M x 8, 512K x 16, parallel, 55ns 48-pin TSOP, Automotive grade 3 (-40°C~125°C), tray
M29F160FB5AN6F2	16Mb	Bottom	2M x 8, 1M x 16, parallel, 55ns, 48-pin TSOP, Automotive grade 6 (-40°C~85°C), tape & reel
M29F160FT55N3E2	16Mb	Top	2M x 8, 1M x 16, parallel, 55ns, 48-pin TSOP, Automotive grade 3 (-40°C~125°C), tray

The AEC-Q100-certified components feature a 55ns access time. They are offered with -40°C to +85°C and -40°C to +125°C extended temperature ranges in the 48-pin TSOP and 44-pin SOP packages. Additional density and configuration options may be available upon request.

Alliance Memory Introduces New Line of 1.8V and 3V SPI NAND Flash Memory Solutions; AS5F Series Devices Provide Designers With Low-Cost, Compact Alternatives to Parallel NAND and SPI NOR Flash Memory in Embedded Systems

Nathan — Mon, 21 Sep 2020 19:38:46 +0000

KIRKLAND, Wash. — Sept. 21, 2020 — To meet the growing demand for serial peripheral interface (SPI) NAND flash memory products in the automotive, industrial, communications, and consumer electronics markets, Alliance Memory today announced the new AS5F series of 1.8V to 3V devices with densities from 1Gb to 8Gb and high-speed clock frequencies up to 120MHz. "While embedded systems have traditionally relied on SPI NOR flash for boot code and parallel NAND flash for data storage, several markets are migrating to SPI NAND flash memory products, which can fulfill both of these functions," said David Bagby, president and CEO of Alliance Memory. "Not only does this reduce BOM costs, but the devices offer superior performance — increased reliability, faster boot-up, and higher write and erase speeds — in a smaller form factor. With the AS5F series, we're perfectly positioned to support our customers as they make the transition to SPI NAND flash." With their enhanced performance, the devices released today meet the requirements for multimedia data storage applications and artificial intelligence (AI) implementation. They are ideal for use in chipsets for Wi-Fi routers, mobile devices, xDSL/xPON technologies, data cards, IP cameras, set-top boxes, digital TVs, smart home devices, and more. Offering reliable, long-term performance, AS5F series SPI NAND flash products feature more than 60,000 program/erase cycles and offer 10-year data retention. The solutions operate over an industrial temperature range of -40°C to +85°C and offer 25mA read/program currents and 30mA erase currents. The devices support standard, dual, and quad SPI operation and are offered in the lead (Pb)- and halogen-free LGA 8-pin package. Device Specification Table:

Part number	Density	VCC	Speed
AS5F31G04SND-08LIN	1Gb	3V	120MHz
AS5F12G04SND-10LIN	2Gb	1.8V	100MHz
AS5F32G04SND-08LIN	2Gb	3V	120MHz
AS5F14G04SND-10LIN	4Gb	1.8V	100MHz
AS5F34G04SND-08LIN	4Gb	3V	120MHz
AS5F18G04SND-10LIN	8Gb	1.8V	100MHz
AS5F38G04SND-08LIN	8Gb	3V	120MHz

Samples and production quantities of the 1.8V and 3V SPI NAND flash memory products are available now, with lead times of eight weeks. Pricing for U.S. delivery depends on density and order quantity and starts at approximately $2 per piece for 1Gb parts.

Alliance Memory Expands Lineup of High-Speed CMOS DDR4 SDRAMs With New 8Gb Devices; Devices Combine Low 1.2V Power Consumption With Fast Data Transfer Rates to 2666Mbps/pin for Increased Efficiency and Performance

Nathan — Wed, 30 Sep 2020 16:06:03 +0000

KIRKLAND, Wash. — Sept. 30, 2020 — To meet the increasing demand for higher-density CMOS DDR4 SDRAMs, Alliance Memory announced that it has expanded its portfolio with two new 8Gb devices. Delivering improved performance over previous-generation DDR3 SDRAMs, the AS4C1G8D4 and AS4C512M16D4 offer lower power consumption and faster data transfer rates in 78-ball and 96-ball FBGA packages, respectively. Compared with DDR3 SDRAMs, the devices released today reduce operating voltages from 1.65V to +1.2V (±0.06V) to increase battery life in portable electronics such as smartphones and tablets. For increased efficiency and performance in 5G designs, desktop computers, and servers, the 1Gb x 8-bit AS4C1G8D4 and 512M x 16-bit AS4C512M16D4 offer up to 16 memory banks and deliver faster clock speeds of 1333MHz for extremely high transfer rates to 2666Mbps/pin. With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges, the devices are ideal for the industrial, networking, IoT, automotive, gaming, and consumer markets. The AS4C1G8D4 and AS4C512M16D4 support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead- (Pb) and halogen-free. Device Specification Table:

Part #	Density	Organization	Package	Temp. range (°C)
AS4C1G8D4-75BCN	8Gb	1Gb x 8	78-ball FBGA	0 to +95
AS4C1G8D4-75BIN	8Gb	1Gb x 8	78-ball FBGA	-40 to +95
AS4C512M16D4-75BCN	8Gb	512Mb x 16	96-ball FBGA	0 to +95
AS4C512M16D4-75BIN	8Gb	512Mb x 16	96-ball FBGA	-40 to +95

Samples and production quantities of the new 8Gb DDR4 SDRAMs are available now, with lead times of eight to 10 weeks. Pricing for U.S. delivery starts $8 per piece.

Alliance Memory Signs Rep Agreement With IRI, Expands Presence in Midwest and Central U.S.

Nathan — Wed, 11 Nov 2020 18:59:37 +0000

KIRKLAND, Wash. — Nov. 11, 2020 — Alliance Memory today announced that it has concluded an agreement with Industrial Representatives Inc. (IRI), a Northfield, Illinois-based manufacturers' representative for electronic components. Under the agreement, the company is now offering Alliance Memory's entire lineup of SRAM, DRAM, and flash ICs to its customers throughout the Midwest and Central United States, including Illinois, Wisconsin, Missouri, Iowa, Nebraska, Minnesota, North Dakota, South Dakota, Texas, Oklahoma, Louisiana, and Arkansas, with Kansas to be added in January 2021. For over 56 years, IRI has provided world-class sales and technical engineering services to the electronics industry. For the company's customers, Alliance Memory's legacy ICs offer reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions across a broad spectrum of applications, including industrial, automotive, medical, communications, telecom, consumer electronics, and more. Through its partnership with Alliance Memory, IRI is offering its customers a full range of 3.3V and 5V fast asynchronous devices, synchronous SRAMs, PSRAMs, and low-power SRAMs, in addition to 5V parallel NOR and 1.8V and 3V SPI NAND flash ICs. The company's broad portfolio of high-speed CMOS SDRAMs includes MSDR, DDR, DDR2, DDR3, DDR4, LPDDR, LPDDR2, and LPDDR4 devices in a wide range of densities, configurations, and package options. In addition, IRI customers have access to several discontinued devices from Micron Technology, including DDR, DDR3, DDR3L, and SDR SDRAMs, as well as NOR flash ICs. "IRI has a long history of bringing leading-edge technology to the electronics industry — with product lines that are at the forefront of their categories — so we are thrilled to be joining its offering with our rapidly expanding portfolio of legacy ICs," said David Bagby, president and CEO of Alliance Memory. "Having established relationships with key customers across a wide range of markets in the Midwest and Central United States, the company is perfectly positioned to help us expand our reach in these regions and extend our streak of record-breaking sales."

"IRI has been serving the Central U.S. marketplace since 1962 and has been a successful sales leader in the memory market since the early '70s," said Matt Mitchell, president of IRI. "Our broad market knowledge, in conjunction with the memory product portfolio delivered by Alliance Memory, is a winning combination. We are excited to be partnered with the company and serving our customers with long-term memory solutions."

More information on IRI is available at https://www.irirep.com/.

Alliance Memory 2Gb, 4Gb, and 8Gb LPDDR4 SDRAMs Offer Low Power Consumption to Increase Battery Life in Mobile Electronics; Devices Combine Low-Voltage Operation of 1.1V With Fast Clock Speeds of 1.6GHz for increased Efficiency and Performance

Nathan — Tue, 15 Dec 2020 16:50:15 +0000

KIRKLAND, Wash. — Dec. 15, 2020 — Alliance Memory today announced that it has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new LPDDR4 devices featuring on-chip ECC. For improved performance with higher power efficiency than previous-generation LPDDR3 SDRAMs, the 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN offer lower power consumption and faster speeds in the 200-ball FBGA package. With low-voltage operation of 1.1V/1.8V, the devices released today increase battery life in portable electronics for the consumer and industrial markets, including tablets, wearables, handheld gaming consoles, personal navigation systems, and more. Providing increased efficiency for advanced audio and high-resolution video in embedded applications, the LPDDR4 SDRAMs deliver fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications — including infotainment and ADAS systems — the AEC-Q100 qualified devices operate over a temperature range of -40°C to +105°C. The LPDDR4 SDRAMs are organized as 1 channel (AS4C128M16MD4-062BAN and AS4C256M16MD4-062BAN) and 2 channels (AS4C128M32MD4-062BAN and AS4C256M32MD4-062BAN) per device, with individual channels consisting of eight banks of 16 bits. The components offer fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and selectable output drive strength. An on-chip temperature sensor controls the self-refresh rate. With minimal die shrinks, Alliance Memory's LPDDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification. Device Specification Table:

Part #	Density	Organization	Speed	Package
AS4C128M16MD4-062BAN	2Gb with ECC	128Mb x 16	1.6GHz	200-ball FBGA (10mm x 14.5mm x 0.8mm)
AS4C256M16MD4-062BAN	4Gb with ECC	256Mb x 16	1.6GHz	200-ball FBGA (10mm x 14.5mm x 0.8mm)
AS4C128M32MD4-062BAN	4Gb with ECC	128Mb x 32	1.6GHz	200-ball FBGA (10mm x 14.5mm x 0.8mm)
AS4C256M32MD4-062BAN	8Gb with ECC	256Mb x 32	1.6GHz	200-ball FBGA (10mm x 14.5mm x 1.1mm)

Samples and production quantities of the new LPDDR4 SDRAMs are available now, with lead times of eight weeks. Pricing for U.S. delivery starts at $6.00 per piece for 2Gb devices; $12 per piece for 4Gb devices; and $16 per piece for 8Gb devices.

Alliance Memory Now Offering Micron Parallel and Serial NOR Flash Products; Offering Includes M29F, M45PE, N25Q, J3, and P30/P33 Families

Nathan — Mon, 08 Feb 2021 17:00:43 +0000

KIRKLAND, Wash. — Feb. 8, 2021 — Alliance Memory today announced that the company is now an authorized reseller for additional legacy NOR Flash devices from Micron Technology. In addition to the previously announced M29F 5V Parallel NOR Flash devices, Alliance is now reselling select offerings from Micron's M45PE Serial NOR Flash, the N25Q Serial NOR Flash, the J3 Parallel NOR Flash, and the P30/P33 Parallel NOR Flash families, all of which Micron previously discontinued with product change notification #32163 (last time buy: March 2018). Micron is continuing to produce these devices for Alliance Memory and intends to only supply Alliance Memory for any new orders placed through mid-2021. "We are committed to meeting our customers' legacy component needs and have had great success working with Micron to provide continued support for a variety of devices, including 512Mb SDRAMs and 8Gb DDR3L SDRAMs," said David Bagby, president and CEO of Alliance Memory. "We're looking forward to continuing that success with our offering of legacy Micron NOR Flash devices to provide our customers with additional supply availability for the coming years." "Customer focus and support is a core Micron value, and we always strive to find solutions to provide customers with supply flexibility and longevity," said Richard De Caro, director of NOR Flash and emerging memory solutions of the Embedded Business Unit at Micron. "Micron is pleased to once again work with Alliance Memory to provide customers of our legacy NOR Flash products with a trusted source for supply." The Micron-made legacy NOR Flash parts highlighted in the following sections are now available directly from Alliance Memory: M45PE 3V Serial NOR Flash Micron's M45PE Series products are 3V page erasable Serial NOR Flash memory devices accessed by the SPI-compatible bus. The memory can be written or programmed 1 byte to 256 bytes at a time using the PAGE WRITE or PAGE PROGRAM commands. The PAGE WRITE command consists of an integrated PAGE ERASE cycle followed by a PAGE PROGRAM cycle. See product offering details on the Alliance Memory website. N25Q 1.8V and 3V Serial NOR Flash Micron's N25Q series consists of high-performance multiple input/output Serial Flash memory devices manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual- and quad-input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. See product offering details on the Alliance Memory website. J3 and P30/P33 Parallel NOR Flash Micron's J3, P30, and P33 series consist of high-performance single-bit cell (SBC) and multi-level cell (MLC) parallel flash memory devices manufactured on 65nm NOR technology. They feature advanced write protection mechanisms, x8 and x16 bus widths, and are common flash interface (CFI) compatible. See product offering details on the Alliance Memory website.

Alliance Memory Appoints Viorel Toadere as Regional Manager for Eastern Europe

Nathan — Mon, 22 Feb 2021 13:52:25 +0000

KIRKLAND, Wash. — Feb. 22, 2021 — Alliance Memory today announced the appointment of Viorel Toadere as the company's regional manager for Eastern Europe. In his new role, he will be responsible for expanding Alliance Memory's sales coverage in Romania, Hungary, the Czech Republic, Bulgaria, and Slovakia. Mr. Toadere brings over 25 years of experience in the electronics manufacturing industry to Alliance Memory, specializing in semiconductors. He comes to the company from Future Electronics, where for 13 years he served as country manager for Romania — building the sales team in the country and driving revenue growth. Previously, he served as department manager at Vitacom Electronics and commercial manager at Telezimex SA. Mr. Toadere holds an engineering degree from Universitatea Tehnică din Cluj-Napoca and a management diploma from The Open University. "We're thrilled to welcome Viorel to the Alliance Memory team," said Sue Macedo, managing director, EMEA, at Alliance Memory. "With his wealth of experience in the electronics manufacturing industry, background in management, and deep understanding of the Eastern European market, he will play an instrumental role in increasing our customer base in the region." "It's an exciting time to join Alliance Memory, which has experienced significant growth in both its market share and product portfolio over the past few years," said Mr. Toadere. "The company is poised to continue this trend in 2021 and beyond through new products, categories, and industry partnerships. I look forward to contributing to this success by expanding Alliance Memory's presence in the Eastern European market." Mr. Toadere is based in Cluj, Romania, and reports to Sue Macedo. He can be reached at Viorel@alliancememory.com.

Alliance Memory Announces ISO 9001:2015 Recertification

Nathan — Wed, 24 Mar 2021 15:28:34 +0000

KIRKLAND, Wash. — March 24, 2021 — Alliance Memory today announced that its headquarters facilities in Kirkland, Washington, which the company occupied at the beginning of 2020, have received ISO 9001:2015 certification. The company's facilities, beginning with its former headquarters in the San Francisco Bay Area, have been ISO 9001-certified since 2009. ISO 9001:2015, the most recent version of the certification standard, is internationally recognized for promoting a process approach to improving the effectiveness of a quality management system, enhancing customer satisfaction, and meeting customer requirements. Certification indicates independent verification that Alliance Memory meets the requirements of the standard. The assessments look at the process that a company uses to ensure quality and continuous improvement. The Alliance Memory certificate (#QMS-0266b) was issued by Intertek, one of the most recognized and reputable ISO assessment providers in the world. Intertek granted the registration upon Alliance Memory's successful completion of a series of quality system assessments applying the Plan - Do - Check - Act, or PDCA, cycle approach. Alliance Memory is engaged toward obtaining ISO 14001 certification in addition to the ISO 9001 recertification. Details on the Alliance Memory quality program are available at https://www.alliancememory.com/alliance-quality/.

Alliance Memory Moves Taiwan Office to Larger Facility to Accommodate Global Growth

Nathan — Wed, 16 Jun 2021 15:04:23 +0000

KIRKLAND, Wash. — June 16, 2021 — To help accommodate its rapid global expansion while providing room for future growth, Alliance Memory has moved into a new building in Taiwan with twice the warehouse and office space of the company's previous local facility. Effective immediately, the new Alliance Memory address in Taiwan is No. 22, Xingde Road, Dayuan District, Taoyuan City 337002. "Our global presence has expanded greatly since we opened our office in Taiwan six years ago," said David Bagby, president and CEO of Alliance Memory. "Coupled with the recent additions to our product portfolio — with many more on the horizon — we were simply running out of warehouse space to support our growing customer base. We're excited to be moving into a larger facility that gives us the room we need to provide the level of service our customers expect." Recent introductions to the Alliance Memory product lineup include 1.8V to 3V serial peripheral interface (SPI) NAND flash memory products with densities from 1Gb to 8Gb; 2Gb, 4Gb, and 8Gb LPDDR4 SDRAMs featuring on-chip ECC; and 8Gb DDR SDRAMs. In addition, the company has become an authorized supplier for 3V and 5V M29 Parallel NOR Flash; M25P, M45P, and N25Q SPI NOR Flash; and J3, P30, and P33 Parallel NOR Flash devices from Micron Technology. Alliance Memory's products provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, consumer, commercial, medical, telecom, and networking products — eliminating the need for costly redesigns and part requalification.

Alliance Memory Appoints Alistair Jones as Regional Sales Manager for Northern Europe

Nathan — Wed, 23 Jun 2021 14:18:33 +0000

KIRKLAND, Wash. — June 23, 2021 — Alliance Memory today announced the appointment of Alistair Jones as the company's regional sales manager for Northern Europe. In his new role, he will work closely with Alliance Memory's distribution partners to expand the company's sales coverage in the United Kingdom, Ireland, Sweden, Norway, Denmark, and the Baltics. Mr. Jones brings extensive management experience in the semiconductor industry to Alliance Memory. He comes to the company from Avnet Silica, where he served as manager of strategic sales projects, Northern Europe. Previously, he served for four years as EMEA channel manager for Tundra Semiconductor, and another four as the head of global sales and strategy for Electrocomponents' electronics division. Mr. Jones began his career as an inside sales rep with Memec and finished his tenure with the company 20 years later as the vice president of sales, EMEA, for the Memec United division. "Alistair has had a distinguished career in the semiconductor industry, in which he has displayed a drive for excellence across a range of sales, country, and regional management roles," said Sue Macedo, managing director, EMEA, at Alliance Memory. "With his deep knowledge of the Northern European market, he is the perfect fit for this role and will be instrumental in expanding our presence in the region. We couldn't be more pleased to welcome him to the Alliance Memory team." "Alliance Memory is an exciting company to be a part of because it's continuously looking forward," said Mr. Jones. "Even with the myriad challenges presented by 2020, Alliance Memory experienced significant growth in its market share by introducing a slew of new products and industry partnerships. And that momentum is set to continue through 2021 and beyond. I'm looking forward to being a part of the company's success story." Mr. Jones is based in Oxford, England, and reports to Ms. Macedo. He can be reached at Alistair@alliancememory.com.

Alliance Memory 8Gb LPDDR4X SDRAM Offers ~50% Reduction in Power Consumption Compared to LPDDR4 Devices; With Low-Voltage Operation of 0.6V and Fast Clock Speeds of 1.6GHz, Device Extends Battery Life in Portable Electronics, Increases Power Efficiency and Performance

Nathan — Wed, 14 Jul 2021 15:16:44 +0000

KIRKLAND, Wash. — July 14, 2021 — Alliance Memory today announced that it has expanded its offering of high-speed CMOS mobile low-power SDRAMs with a new LPDDR4X device featuring on-chip ECC. Offering an extension to the company's fourth-generation LPDDR4 SDRAMs, the 8Gb AS4C256M32MD4V-062BAN offers ~50% lower power ratings in the 200-ball FBGA package for higher power efficiency. With low-voltage operation of 0.6V — compared to 1.1V for LPDDR4 SDRAMs — the device released today increases battery life in portable electronics for the consumer, commercial, and industrial markets, including smart phones, smart speakers, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAM delivers fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications — including ADAS systems — the AEC-Q100-qualified devices operate over a temperature range of -40°C to +105°C. The AS4C256M32MD4V-062BAN is organized as two channels per device, with individual channels consisting of eight banks of 16 bits. The component offers fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and selectable output drive strength. An on-chip temperature sensor controls the self-refresh rate. Alliance Memory's LPDDR4X SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification. Samples and production quantities of the AS4C256M32MD4V-062BAN are available now, with lead times of 12 weeks. Pricing for U.S. delivery starts at $16.

Alliance Memory in Stock With Scarce Genuine Micron NOR Flash Memory Products; Offering Includes M29F, M45PE, N25Q, J3, and P30/P33 Families

Nathan — Wed, 04 Aug 2021 16:49:41 +0000

KIRKLAND, Wash. — Aug. 4, 2021 — Alliance Memory today announced that it has begun receiving its phase II shipments of a wide range of legacy NOR Flash devices from Micron Technology. Alliance Memory is now stocking select offerings from Micron's M29F 5V Parallel NOR Flash, M45PE Serial NOR Flash, the N25Q Serial NOR Flash, the J3 Parallel NOR Flash, and the P30/P33 Parallel NOR Flash families, all of which Micron previously discontinued with product change notification #32163 (last time buy: March 2018). "We've made a major commitment to meeting our customers' legacy Micron flash component needs, and with the stock we're going to receive now through Q3, we expect to be able to support our customers through 2022 and beyond," said David Bagby, president and CEO of Alliance Memory. "At a time when so many suppliers can't take an order — much less ship — in 2021, Alliance Memory customers can count on us to have, in stock, a very wide range of the Micron flash products they need right now." Micron-made legacy NOR Flash parts highlighted in the following sections are now available directly from Alliance Memory: M29F 5V NOR Flash The AEC-Q100-certified components feature a 55ns access time and are offered with -40°C to +85°C and -40°C to +125°C extended temperature ranges in the 48-pin TSOP and 44-pin SOP packages. Additional density and configuration options are available on request. M45PE 3V Serial NOR Flash Micron's M45PE Series products are 3V page erasable Serial NOR Flash memory devices accessed by the SPI-compatible bus. The memory can be written or programmed 1 byte to 256 bytes at a time using the PAGE WRITE or PAGE PROGRAM commands. N25Q 1.8V and 3V Serial NOR Flash Micron's N25Q series consists of high-performance multiple input/output Serial Flash memory devices manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual- and quad-input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. J3 and P30/P33 Parallel NOR Flash Micron's J3, P30, and P33 series consist of high-performance single-bit cell (SBC) and multi-level cell (MLC) parallel flash memory devices manufactured on 65nm NOR technology. They feature advanced write protection mechanisms, x8 and x16 bus widths, and are common flash interface (CFI)-compatible. To discuss long-term support of the legacy Micron NOR Flash devices, customers are invited to call or email their nearest Alliance Memory contact:

EMEA – Sue Macedo +44 (0)787 634 4055 sue@alliancememory.com

Americas – Tom Gargan +1 514 639 0914 tom@alliancememory.com

Asia / Pacific – David Bagby +1 650 868 1211 david@alliancememory.com

Alliance Memory Introduces New Series of 3V Multiple I/O Serial NOR Flash Memory Solutions; AS25F Series Devices Provide Supply Continuity for Micron Technology's Discontinued N25Q Line

Nathan — Thu, 21 Oct 2021 16:13:54 +0000

KIRKLAND, Wash. — Oct. 21, 2021 — Alliance Memory today announced a new line of 3V multiple input/output serial NOR flash memory products designed to provide supply continuity for Micron Technology customers utilizing discontinued N25Q series devices. Offering support for single, dual, and quad SPI modes, the AS25F series combines fast read performance up to 104MHz with fast program and erase times of 0.3ms and 40ms typical, respectively. Available in 8-pin SOP Wide Body (209mils) and 8L WSON (6x5mm) packages, the devices released today operate from a single 2.7V to 3.6V power supply over an industrial temperature range of -40°C to +85°C. The solutions offer typical erase/program currents of 20mA and maximum read currents of 25mA at 104MHz, and they provide reliable, long-term performance with 100,000 program/erase cycles and 10-year data retention. AS25F series devices support uniform 4KB or 32KB or 64KB erase, offer an 8/16/32/64byte wrap-around burst read mode, and feature program/erase suspend and resume. Advanced security features include block protection and 4K-bit secured OTP to protect content from hostile access and inadvertent programming and erasing. With their enhanced performance, the serial NOR flash memory products are designed to meet the demands of the computer, consumer, communications, IoT, and mobile markets. The devices are ideal for use in chipsets for PCs, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, mobile and wearable devices, digital cameras, handheld GPS units, smart meters, and more. Device Specification Table:

Part number	AS25F364MQ-10SIN	AS25F364MQ-10WIN
Density	64Mb
Bus width	Serial Multi IO (x1/x2/x4)
V_CC	2.7V to 3.6V
Frequency	104MHz
Active read current max.	25mA
Program / erase current max.	25mA
Standby current max.	10µA
Temperature range	-40°C to +85°C
Package	8-pin SOP Wide Body (209 mils)	8L WSON (6mm x 5mm)

Samples and production quantities of the 3V serial NOR flash memory products are available now, with lead times of 16 to 20 weeks.

Alliance Memory Cuts Lead Times for DRAMs and Micron NOR Flash Memory Products With Automotive Temperature Ratings

Nathan — Thu, 02 Dec 2021 14:26:11 +0000

KIRKLAND, Wash. — Dec. 2, 2021 — Alliance Memory today announced that it has greatly reduced lead times for its DRAMs and Micron Technology NOR Flash memory devices with automotive temperature ratings. Responding to customer demand, the company now holds 70 parts in finished goods stock and can provide lead times of just six weeks for its most popular automotive temperature range products. Alliance Memory offers a complete lineup of CMOS SDRAMs — including DDR1, DDR2, DDR3/L, LPDDR4, and LPDDR4X devices — with automotive temperature ratings of -40°C to +105°C. The company's portfolio of automotive SDRAM products includes:

SDR SDRAMs with densities of 64Mb, 128Mb, and 256Mb
DDR1 SDRAMs with densities of 64Mb, 256Mb, and 512Mb
DDR2 SDRAMs with densities of 512Mb,1Gb, and 2Gb
DDR3/L SDRAMs with densities of 1Gb, 2Gb, 4Gb, and 8Gb
LPDDR4 and LPDDR4X SDRAMs with densities of 2Gb, 4Gb, and 8Gb

The company's offering of automotive temperature Micron NOR Flash memory includes 2Mb, 4Mb, 8Mb, and 16Mb 5V Parallel NOR devices from the M29F series, and 32Mb and 64Mb Serial NOR components from the N25Q series. The parts are offered with temperature ratings of -40°C to +85°C and -40°C to +125°C in a variety of package options. Alliance Memory's automotive temperature DRAMs and Micron Flash parts are AEC-Q100-compliant products for high-temperature-requirement applications, including Advanced Driving Assistance Systems (ADAS); powertrain; automotive active safety and autonomous driving; connectivity and in-vehicle-networking (IVN); carputers (customized PCs in cars); telematics; and infotainment systems. A complete list of automotive memory solutions from Alliance Memory is available here: https://www.alliancememory.com/datasheets/automotive-memory-solutions/.

Alliance Memory Signs Rep Agreement With ESI to Support Expanding Customer Base in Southeast and Central U.S.

Nathan — Thu, 20 Jan 2022 18:42:04 +0000

KIRKLAND, Wash. — Jan. 20, 2022 — Alliance Memory today announced that it has concluded an agreement with Electronic Salesmasters Inc. (ESI), a Beachwood, Ohio-based manufacturers' representative for electronic components. Under the agreement, the company is now offering Alliance Memory's entire lineup of SRAM, DRAM, and flash ICs to its customers throughout the southeast and central United States, including Michigan, Indiana, Western Pennsylvania, Ohio, Kentucky, Tennessee, Alabama, Georgia, North Carolina, and South Carolina, with its HHP Associates division serving Florida. ESI has been providing sales and engineering services to the electronics industry since 1972. For the company's customers, Alliance Memory's legacy ICs offer reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions across a broad spectrum of applications, including industrial, appliances, communications, transportation, military, instrumentation, datacom, medical, automotive, and more. Through its partnership with Alliance Memory, ESI is offering its customers a full range of 3.3V and 5V fast asynchronous devices, synchronous SRAMs, PSRAMs, and low-power SRAMs; 5V parallel NOR and 1.8V and 3V SPI NAND flash ICs; and embedded multimedia card (eMMC) solutions. The company's broad portfolio of high-speed CMOS SDRAMs includes MSDR, DDR, DDR2, DDR3, DDR4, LPDDR, LPDDR2, and LPDDR4 devices in a wide range of densities, configurations, and package options. In addition, ESI customers have access to several discontinued devices from Micron Technology, including DDR, DDR3, DDR3L, and SDR SDRAMs, as well as NOR flash ICs. "ESI has been serving a wide range of markets in the electronics industry for five decades, during which time the company has earned an international reputation for its extensive engineering knowledge and synergistic product lines," said Tom Gargan, director of sales for Canada, the Eastern U.S., and Brazil at Alliance Memory. "For states in the southeast and central U.S. where we currently only offer remote coverage, this partnership will provide our customers with greater access to our legacy ICs while offering them a team of knowledgeable sales engineers for outstanding service." "Over the last few years, Alliance Memory's portfolio of memory solutions has grown rapidly. Furthermore, in a time when IC shortages are the norm, the company has managed to keep its lead times short," said Spencer Abramson, president of ESI. "Not surprisingly, these two factors have led to tremendous growth for the company. We couldn't be more excited to add Alliance Memory's long-term memory solutions to our line card and support the company's expanding customer base."

eMMC: Alliance New 4GB & 8GB Solutions!

Nathan — Mon, 31 Jan 2022 16:00:55 +0000

Alliance Memory 4GB and 8GB eMMC Storage Solutions Simplify Designs and Save Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1 , Industrial-Grade Devices Combine NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

KIRKLAND, Wash. Jan. 27, 2022— Alliance Memory today introduced two new industrial-grade embedded multi-media card (eMMC) solutions. For solid-state storage in consumer, industrial, and networking applications, the 4GB eMMC : ASFC4G31M-51BIN and 8GB eMMC: ASFC8G31M-51BIN each integrates NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package.

The devices released today are compliant with the JEDEC eMMC v5.1 industry standard, supporting features such as boot operation; replay protected memory block (RPMB); device health report; field firmware updates; power off notification; enhanced strobe features for faster and more reliable operation; write leveling; high-priority interrupt (HPI); secure trim/erase; and high-speed HS200 and HS400 modes. The ASFC4G31M-51BIN and ASFC8G31M-51BIN are also backwards-compatible with eMMC v4.5 and v5.0. The eMMCs will be used in products such as smart watches, tablets, digital TVs, set-top boxes, VR and AR headsets, digital cameras, infotainment, CCTV, surveillance, automation, point-of-sale systems and emerging embedded applications. For designers, the ASFC4G31M-51BIN and ASFC8G31M-51BIN simplify designs for fast and easy system integration in these products — speeding up product development and time to market — while saving space by eliminating the need for an external controller. In addition, the devices’ FTL software provides high reliability and stable performance with wear levelling and bad block management. The ASFC4G31M-51BIN and ASFC8G31M-51BIN operate over an industrial temperature range of -40°C to +85°C and offer programmable bus widths of x1, x4, and x8. The devices’ NAND memory with internal LDO can be powered with a single 3V supply voltage, while the controller can be powered by 1.8V or 3V dual supply voltages. Samples and production quantities of the eMMCs will be available in Q1 2022, with lead times of 12 weeks. Products detail

Visit Alliance Memory at Embedded World 2022

gafie — Thu, 28 Apr 2022 01:01:18 +0000

21 – 23 June 2022 Nuremberg, Germany

Stop by and see us at Hall 1, Stand 639 on the exhibit floor or request an appointment to discuss your projects. Email Sue Macedo at sue@alliancememory.com to schedule a time. For free admission, register at https://www.messe-ticket.de/Nuernberg/embeddedworld/Register using personalized voucher code ew22466864.

New Alliance Memory Products on Display at Embedded World 2022

Industrial-Grade 4GB and 8GB eMMCs

For solid-state storage in consumer, industrial, and networking applications, Alliance Memory’s 4GB and 8GB embedded multi-media card(eMMC) solutions each integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package. Compliant with the JEDEC eMMC v5.1 industry standard, the eMMCs support a wide range of features, from boot operation to high-speed HS200 and HS400 modes. Link to product listing Link to product photos

High-Speed CMOS Mobile Low-Power SDRAMs With On-Chip ECC

With low-voltage operation of 1.1V and 0.6V, respectively, Alliance Memory’s LPDDR4 and LPDDR4x devices increase battery life in portable electronics and IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and high-resolution video in embedded applications, the low-power SDRAMs deliver fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications, the AEC-Q100 qualified devices operate over a temperature range of -40°C to +105°C. Link to product listing Link to product photos (LPDDR4) Link to product photos (LPDDR4x)

1.8V to 3V SPI NAND Flash

Alliance Memory’s AS5F series of 1.8V to 3V SPI NAND flash products offers densities from 1Gb to 8Gb and high-speed clock frequencies up to 120MHz for automotive, industrial, communications, and consumer electronic markets. Providing reliable, long-term performance, the devices feature more than 60,000 program/erase cycles, offer 10-year data retention, and support standard, dual, and quad SPI operation. With their enhanced performance, the flash products meet the requirements for multimedia data storage applications and AI implementation. Link to product listing Link to product photos

3V Multiple I/O Serial NOR Flash

Alliance Memory’s AS25F line of 3V multiple input/output serial NOR flash memory products are designed to provide supply continuity for Micron Technology customers utilizing discontinued N25Q series devices. The AS25F series combines fast read performance up to 104MHz with fast program and erase times of 0.3ms and 40ms typical, respectively. Available in 8-pin SOP Wide Body (209mils) and 8L WSON (6x5mm) packages, the devices provide reliable, long-term performance with 100,000 program/erase cycles and 10-year data retention. Link to product listing Link to product photos

Alliance Memory to Highlight Latest SRAM, DRAM, Flash, and Storage Memory ICs at Embedded World 2022

Nathan — Thu, 05 May 2022 15:05:21 +0000

KIRKLAND, Wash. — May 5, 2022 — Alliance Memory today announced its technology lineup for Embedded World 2022, taking place June 21-23 in Nuremberg, Germany. Exhibiting in Hall 1, Stand 639, the company will highlight its latest SRAM, DRAM, flash, and storage memory ICs for embedded platforms. "It's been more than two years since Alliance Memory has exhibited at an in-person trade show," said David Bagby, president and CEO of Alliance Memory. "During that time, we've been proudly supporting the European market with a reliable source of legacy memory chips that were otherwise in short supply, especially our Micron Technology flash devices, which we've been able to keep in stock due to our special relationship with the company. But the long wait is finally over, and we're excited to meet up with our valued distributors and customers again at Embedded World 2022. We can't wait to see everyone in Nuremberg." On display at Embedded World 2022, Alliance Memory's latest offering for the embedded market includes 4GB and 8GB industrial grade embedded multi-media card (eMMC) solutions for solid-state storage in consumer, industrial, and networking applications. The devices each integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5mm by 13mm 153-ball FBGA package. Compliant with the JEDEC eMMC v5.1 industry standard, the eMMCs support features such as boot operation, replay protected memory block (RPMB), device health report, field firmware updates, power-off notification, enhanced strobe features for faster and more reliable operation, write leveling, high-priority interrupt (HPI), secure trim/erase, and high-speed HS200 and HS400 modes. Alliance Memory will also be highlighting high-speed CMOS mobile low-power SDRAMs featuring on-chip ECC. With low-voltage operation of 1.1 V and 0.6 V, respectively, the LPDDR4 and LPDDR4x devices increase battery life in portable electronics for the consumer, commercial, and industrial markets, including tablets, wearables, smartphones, smart speakers, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and high-resolution video in embedded applications, the low-power SDRAMs deliver fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications — including infotainment and ADAS systems — the AEC-Q100 qualified devices operate over a temperature range of -40°C to +105°C. To meet the growing demand for serial peripheral interface (SPI) NAND flash memory products in the automotive, industrial, communications, and consumer electronic markets, Alliance Memory will be exhibiting its AS5F series of 1.8V to 3V devices with densities from 1Gb to 8Gb and high-speed clock frequencies up to 120MHz. Offering reliable, long-term performance, the SPI NAND flash products feature more than 60,000 program/erase cycles, offer 10-year data retention, and support standard, dual, and quad SPI operation. With their enhanced performance, the devices meet the requirements for multimedia data storage applications and AI implementation. In addition, Alliance Memory will showcase its AS25F line of 3V multiple input/output serial NOR flash memory products, which are designed to provide supply continuity for Micron Technology customers utilizing discontinued N25Q series devices. The AS25F series combines fast read performance up to 104MHz with fast program and erase times of 0.3ms and 40ms typical, respectively. Available in 8-pin SOP Wide Body (209mils) and 8L WSON (6x5mm) packages, the devices provide reliable, long-term performance with 100,000 program/erase cycles and 10-year data retention. For free admission to Embedded World 2022, register at https://www.messe-ticket.de/Nuernberg/embeddedworld/Register using personalized voucher code ew22466864.

Visit Alliance Memory at electronica 2022

gafie — Thu, 04 Aug 2022 08:51:37 +0000

November 15–18, 2022 Trade Fair Center Messe München, Germany

Stop by and see us at Hall C3 Stand no. 328 on the exhibit floor or request an appointment to discuss your projects. Email Sue Macedo at sue@alliancememory.com to schedule a time.

Featured Products at electronica 2022

eMMCs

Compliant with the JEDEC eMMC v5.1 industry standard, Alliance Memory’s eMMC solutions integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single package for solid-state storage in consumer, industrial, and networking applications. The devices simplify designs for fast and easy system integration — speeding up product development and faster time to market — while saving space by eliminating the need for an external controller. The solutions are compliant with the JEDEC eMMC v5.1 industry standard and are available with densities of 4GB and 8GB. A 16GB device will be released in December 2022.

New DDR4 SDRAMs

Built on a finer process that results in a smaller chip than Alliance Memory’s original 4GB DDR4 SDRAMs, new “A” die versions deliver improved performance — with lower power consumption down to +1.2V (±0.06V), faster clock speeds to 1600MHz, and higher transfer rates to 3200Mbps — at a lower cost. The devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity. In addition, the company is offering a 16GB Micron Technology DDR SDRAM for a wide range of applications.

New 128Mb and 256Mb 1.8V Serial NOR Flash

Alliance Memory’s 3V and 1.8V multiple input/output serial NOR Flash memory products are designed to provide supply continuity to Micron Technology customers utilizing discontinued devices. The NOR Flash products combine fast read performance up to 133MHz with the fast program and erase times. Available in 8-pin SOP wide body (208mils) and 8L WSON (6x5mm) packages, the devices provide reliable, long-term performance with high program/erase cycles and long data retention.

DDR3 SDRAMs

Alliance Memory’s lineup of DDR3 (1.5V) and DDR3L (1.35V) SDRAMs includes 512Mb, 1Gb, 2Gb, 4Gb, and 8Gb devices in x8/x16 bus widths, offered in 78-ball and 96-ball FBGA packages across commercial, industrial, and automotive temperature ranges. Offering a double data rate architecture for extremely fast transfer rates of up to 2133Mbps/pin and clock rates of 1066MHz, the devices provide reliable drop-in, pin-for- pin compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, consumer, telecom, aerospace, and automotive applications.

Alliance Memory Rounds Out DDR4 SDRAM Lineup With Six New 4Gb “A” Die Devices and 16Gb Option From Micron Technology; Devices Offer Improved Performance With Lower +1.2V Operating Voltages and Higher Speeds to 1600MHz in 96-Ball and 78-Ball FBGA Packages

Nathan — Thu, 08 Sep 2022 17:20:47 +0000

KIRKLAND, Wash. — Sept. 8, 2022 — Alliance Memory today announced that it has expanded its portfolio of CMOS DDR4 SDRAMs with new “A” die versions of the 4Gb AS4C256M16D4A and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. Built on a finer process that results in a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. In addition, Alliance Memory is continuing its partnership with Micron Technology and offering the company’s MT40A1G16KH-062E DDR4 SDRAM to provide customers with a 16Gb option. To increase battery life in portable electronics such as smartphones and tablets, the Alliance Memory devices released today feature low operating voltages of +1.2V (±0.06V). The DDR4s are designed, qualified, and recommended for use in 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, PNDs, and more. Built on a new process technology, the new devices offer fast clock speeds up to 1600MHz and transfer rates up to 3200Mbps. The AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. With minimal die shrinks, Alliance Memory’s DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges, the new “A” die devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity. The addition of Micron Technology’s MT40A1G16KH-062E to Alliance Memory’s offering of DDR4 SDRAMs provides the company’s customers with access to a 16Gb device for a wide range of applications. Operating from a +1.2V power supply over a commercial temperature range, the 1Gb x 16-bit device is built on an 8n-prefetch architecture for high data rates of 3200 MT/s. The MT40A1G16KH-062E supports read or write burst lengths of BC4 or BL8 on the fly. Device Specification Table:

Part #	Density	Organization	Package	Speed	Temp. range (°C)
AS4C256M16D4-83BCN	4Gb	256M x 16	96-ball FBGA	1200MHz	0 to +95
AS4C256M16D4-83BIN	4Gb	256M x 16	96-ball FBGA	1200MHz	-40 to +95
AS4C256M16D4-75BCN	4Gb	256M x 16	96-ball FBGA	1333MHz	0 to +95
AS4C256M16D4-75BIN	4Gb	256M x 16	96-ball FBGA	1333MHz	-40 to +95
AS4C256M16D4A-62BCN	4Gb	256M x 16	96-ball FBGA	1600MHz	0 to +95
AS4C256M16D4A-62BIN	4Gb	256M x 16	96-ball FBGA	1600MHz	-40 to +95
AS4C256M16D4A-75BCN	4Gb	256M x 16	96-ball FBGA	1333MHz	0 to +95
AS4C256M16D4A-75BIN	4Gb	256M x 16	96-ball FBGA	1333MHz	-40 to +95
AS4C512M8D4-83BCN	4Gb	512M x 8	78-ball FBGA	1200MHz	0 to +95
AS4C512M8D4-83BIN	4Gb	512M x 8	78-ball FBGA	1200MHz	-40 to +95
AS4C512M8D4-75BCN	4Gb	512M x 8	78-ball FBGA	1333MHz	0 to +95
AS4C512M8D4-75BIN	4Gb	512M x 8	78-ball FBGA	1333MHz	-40 to +95
AS4C512M8D4A-75BCN	4Gb	512M x 8	78-ball FBGA	1333MHz	0 to +95
AS4C512M8D4A-75BIN	4Gb	512M x 8	78-ball FBGA	1333MHz	-40 to +95
AS4C512M16D4-75BCN	8Gb	512M x 16	96-ball FBGA	1333MHz	0 to +95
AS4C512M16D4-75BIN	8Gb	512M x 16	96-ball FBGA	1333MHz	-40 to +95
AS4C1G8D4-75BCN	8Gb	1Gb x 8	78-ball FBGA	1333MHz	0 to +95
AS4C1G8D4-75BIN	8Gb	1Gb x 8	78-ball FBGA	1333MHz	-40 to +95
MT40A1G16KH-062E	16Gb	1Gb x 16	96-ball FBGA	1600MHz	0 to +95

Samples and production quantities of the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN are available now, with lead times of eight to 12 weeks. Micron’s MT40A1G16KH-062E is available now from stock.

Alliance Memory to Highlight Latest SRAM, DRAM, eMMC, and Flash Memory ICs at electronica 2022

Nathan — Tue, 15 Nov 2022 18:29:07 +0000

KIRKLAND, Wash. — Nov. 7, 2022 — Alliance Memory today announced its technology lineup for electronica 2022, taking place Nov. 15-18 at the Trade Fair Center in Munich, Germany. Exhibiting in Hall C3, Stand 328, the company will be highlighting its latest SRAM, DRAM, eMMC, and flash memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. "It's hard to believe it's been four years since electronica was last held," said David Bagby, president and CEO of Alliance Memory. "In that time, we've been extremely busy expanding our portfolio of memory solutions, whether it's bolstering our lineup of DDR3 SDRAMs or adding new products like DDR4 SDRAMs and eMMCs. We can't wait to meet up with our valued distributors and customers to show them what we've been up to and how we continue to be their trusted source for a growing range of must-have memory ICs." At electronica 2022, Alliance Memory will showcase eMMC solutions that integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single package for solid-state storage in consumer, industrial, and networking applications. The devices simplify designs for fast and easy system integration — speeding up product development and time to market — while saving space by eliminating the need for an external controller. The solutions are compliant with the JEDEC eMMC v5.1 industry standard and available with densities of 4GB and 8GB. A 16GB device will be released in December 2022. Built on a finer process that results in a smaller chip than Alliance Memory's original 4GB DDR4 SDRAMs, new "A" die versions will be on display at electronica 2022 that deliver improved performance — with lower power consumption down to +1.2V (±0.06V), faster clock speeds to 1600MHz, and higher transfer rates to 3200Mbps — at a lower cost. The devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity. In addition, the company is offering a 16GB Micron Technology DDR4 SDRAM for a wide range of applications. Alliance Memory will highlight 3V and 1.8V multiple input/output serial NOR Flash memory products, which are designed to provide supply continuity to Micron Technology customers utilizing discontinued devices. The NOR Flash products combine fast read performance up to 133MHz with fast program and erase times. Available in 8-pin SOP wide body (208mils) and 8L WSON (6x5mm) packages with densities of 64Mb and 128Mb, the devices provide reliable, long-term performance with high program/erase cycles and long data retention. In addition, Alliance Memory will highlight its lineup of DDR3 (1.5V) and DDR3L (1.35V) SDRAMs, which includes 512Mb, 1Gb, 2Gb, 4Gb, and 8Gb devices in x8/x16 bus widths, offered in 78-ball and 96-ball FBGA packages across commercial, industrial, and automotive temperature ranges. Offering a double data rate architecture for extremely fast transfer rates of up to 2133Mbps/pin and clock rates of 1066MHz, the devices provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, consumer, telecom, aerospace, and automotive applications. electronica is the world's leading trade fair for components, systems, and applications. More information on the event is available at http://www.electronica.de/.

Alliance Memory Signs Rep Agreement With Eclipse Technologies to Support Customers in Wisconsin and Illinois

Nathan — Tue, 15 Nov 2022 18:32:22 +0000

KIRKLAND, Wash. — Nov. 15, 2022 — Alliance Memory today announced that it has concluded an agreement with Eclipse Technologies Inc., a Milwaukee-based manufacturers' representative for electronic components. Under the agreement, the company is now offering Alliance Memory's entire lineup of SRAM, DRAM, embedded multi-media card (eMMC), and flash memory ICs to its customers throughout Wisconsin and Illinois. Eclipse Technologies has been providing sales and engineering services for the industrial, medical, security, military, communications, computing, and automotive markets since 2010. For the company's customers, Alliance Memory's legacy and innovative technology ICs offer reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions across a broad spectrum of applications. Through its partnership with Alliance Memory, Eclipse Technologies is offering its customers a full range of 3.3V and 5V fast asynchronous devices, synchronous SRAMs, PSRAMs, and low-power SRAMs; 5V parallel NOR and 1.8V and 3V SPI NAND flash ICs; and eMMC solutions. The company's broad portfolio of high-speed CMOS SDRAMs includes MSDR, DDR, DDR2, DDR3, DDR4, LPDDR, LPDDR2, and LPDDR4 devices in a wide range of densities, configurations, and package options. In addition, Eclipse Technologies' customers have access to several discontinued devices from Micron Technology, including DDR, DDR3, DDR3L, and SDR SDRAMs, as well as NOR flash ICs. "Throughout Wisconsin and Illinois, Eclipse Technologies has earned a rock-solid reputation across a range of markets for providing an extremely broad technology portfolio and working very closely with customers to create new designs," said Tom Gargan, director of sales for Canada, the Eastern U.S., and Brazil at Alliance Memory. "The company is well-known to our distributors and will be instrumental in providing our customers with exceptional service and greater access to our rapidly expanding product portfolio." "We focus on representing manufacturers that are technology leaders in their respective fields, which makes Alliance Memory a perfect addition to our product lineup," said Ed Allen, president of Eclipse Technologies. "Over the last few years, the company's portfolio of memory solutions has grown significantly to meet the market demand as manufacturers continue to EOL devices like SRAMs, SDRAMs, and even DDR3 SDRAMs. We couldn't be more excited to bring these devices to Alliance Memory's expanding customer base in Wisconsin and Illinois."

Alliance Memory Expands Multiple I/O Serial NOR Flash Memory Series With New 1.8V, 128Mb Solutions; Supporting Single, Dual, and Quad SPI Modes, Devices Offer Fast Read Performance to 133MHz and Operate Over a Single 1.65V to 1.95V Power Supply

Nathan — Tue, 03 Jan 2023 16:51:09 +0000

KIRKLAND, Wash. — Dec.14, 2022 — Alliance Memory today announced that the company has expanded its AS25F series of multiple input/output serial NOR flash memory products with two new 1.8V, 128Mb devices. Offering support for single, dual, and quad SPI modes — with a QPI function — the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN combine fast read performance up to 133MHz with fast program and erase times of 0.3ms and 60ms typical, respectively. Available in 8-pin SOP Wide Body (208mils) and 8L WSON (6x5mm) packages, the devices released today operate from a single 1.65V to 1.95V power supply, with active read current as low as 5mA and power consumption of < 3µA typical in Deep Power-Down mode. The solutions operate over an industrial temperature range of -40°C to +85°C and provide reliable, long-term performance with 100,000 program/erase cycles. The AS25F1128MQ-70SIN and AS25F1128MQ-70WIN support uniform 4KB or 32KB or 64KB erase, offer an 8/16/32/64byte wrap-around burst read mode, and feature program/erase suspend and resume. Advanced security features include block protection and 4K-bit secured OTP to protect content from hostile access and inadvertent programming and erasing. With their enhanced performance, the serial NOR flash memory products are designed to meet the demands of the computer, consumer, communications, IoT, and mobile markets. The devices are ideal for use in chipsets for PCs, servers, laptops, optical disc drives, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, mobile and wearable devices, digital cameras, and more. Device Specification Table:

Part number	AS25F1128MQ-70SIN	AS25F1128MQ-70WIN
Density	128Mb
Bus width	Serial Multi IO (x1/x2/x4)
V_CC	1.65V to 1.95V
Speed	133MHz
Active read current max.	27mA
Power down current max.	20µA
Standby current max.	70µA
Temperature range	-40°C to +85°C
Package	8-pin SOP (208mils)	8L WSON (6mm x 5mm)

Samples and production quantities of the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN are in stock and available now.

Alliance Memory Launches New LPSRAMs With Embedded Error-Correction Code; 1Mb and 4Mb Devices Boost Reliability Over Previous Generation Devices

Nathan — Wed, 25 Jan 2023 15:18:27 +0000

KIRKLAND, Wash. — Jan. 25, 2023 — Alliance Memory today announced that the company has expanded its portfolio of low power asynchronous SRAM (LPSRAM) products with new 1Mb and 4Mb devices that feature embedded error-correction code (ECC). Compared to previous generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER) for more reliable operation in a wide range of consumer, industrial, communications, and medical applications. The new LPSRAMs' ECC feature provides 1-bit error correction per byte, which makes them particularly suitable for low power applications and battery backup nonvolatile memory applications. Data retention voltage for both devices is 1.5V with typical data retention current of 1µA for the 1Mb AS6CE1016A and 2µA for the 4Mb AS6CE4016B. The devices operate from a single power supply of 2.7V to 3.6V, and all inputs and outputs are fully TTL compatible. With their enhanced performance, the new LPSRAMs are designed to meet the demands of a very wide range of applications, such as routers and switches in communications systems; programmable logic controllers in industrial automation systems; printers, gaming machines, musical instruments, and calculators; vending machines and ATMs; and elevator systems, control panels, and fire control systems. Key device specifications and package options are shown in the table below. Device Specification Table:

Part number	Organization	VCC range	Access time	Operating temperature	Package
AS6CE4016B-45ZIN	256K x 16	2.7 – 3.6V	45 ns	-40 ~ 85°C	44-pin 400 mil TSOP II
AS6CE4016B-45BIN	256K x 16	2.7 – 3.6V	45 ns	-40 ~ 85°C	48-ball 6mm x 8mm FBGA
AS6CE1016A-45ZIN	64K x 16	2.7 – 3.6V	45 ns	-40 ~ 85°C	44-pin 400 mil TSOP II

Samples and production quantities of the AS6CE1016A (1Mb) and AS6CE4016B (4Mb) are in stock and available now.

Alliance Memory Expands Lineup of CMOS DDR4 SDRAMs With New 16Gb Device; 1Gb x 16-bit DDR4 SDRAM Combines Low 1.2V Power Consumption With Fast Clock Speeds to 1600MHz and Transfer Rates to 3200 MT/s in 96-Ball FBGA Package

Nathan — Tue, 14 Feb 2023 18:05:56 +0000

KIRKLAND, Wash. — Feb. 14, 2023 — Alliance Memory today announced that it has expanded its portfolio of CMOS DDR4 SDRAMs with a new 16Gb device in the 96-ball FBGA package. Providing the company's customers with a higher-density option for a wide range of applications, the AS4C1G16D4-062BCN delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption and higher speeds and transfer rates. To increase battery life in portable electronics such as smartphones and tablets, the DDR4 SDRAM released today features a low operating voltage of +1.2V (±0.06V). The AS4C1G16D4-062BCN is designed, qualified, and recommended for use in 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, PNDs, and more. Built on an 8n-prefetch architecture, the device offers fast clock speeds up to 1600MHz and transfer rates up to 3200 MT/s. The 1Gb x 16-bit AS4C1G16D4-062BCN supports sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. With minimal die shrinks, the DDR4 SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in the commercial (0°C to +95°C) temperature range, the device is ideal for the industrial, networking, telecommunications, gaming, and consumer markets. Samples and production quantities of the AS4C1G16D4-062BCN are in stock and available now. Pricing for U.S. delivery starts at $10 per piece.

Alliance Memory Bolsters Presence in Asia with Appointment of Linus Park as Country Manager for Korea

Nathan — Thu, 18 May 2023 15:15:07 +0000

KIRKLAND, Wash. — May 18, 2023 — Alliance Memory today announced that it has strengthened its market presence in Asia with the appointment of Linus Park as the company's country manager for Korea. In his new role, he will work closely with Alliance Memory's distribution partners to expand the company's sales coverage in the country Mr. Park brings extensive experience in the semiconductor industry to Alliance Memory. He comes to the company from Selko Electronics, an exclusive representative for leading manufacturers of semiconductors and electro-mechanical components. As a sales representative, he was responsible for increasing the company's market share in Korea with the addition of several manufacturers to its line card, including Alliance Semiconductor. Previously, Mr. Park served as a sales engineer for Telcom Semiconductor and Liteon Korea. He began his career as a network system developer at the Korea Telecom Research Institute and holds an electronics engineering degree from Dankook University. "Having worked closely with Linus as both a sales rep for Alliance Semiconductor and a distributor for Alliance Memory, I know that his knowledge of the Korean market is second to none," said David Bagby, president and CEO of Alliance Memory. "Combined with his familiarity with our line-up of memory solutions, there is no one better suited to lead our efforts in the country. I'm thrilled to welcome him to the Alliance team." "I couldn't be more excited to join Alliance Memory, especially at a time when the memory market is changing so significantly," said Mr. Park. "The company has more than kept up with the shifting landscape, introducing a wide range of new products and industry partnerships over the last few years. I'm looking forward to contributing to Alliance Memory's success by supporting its growing customer base in Korea." Mr. Park is based in Seoul and reports to Mr Bagby. He can be reached at Linus@alliancememory.com.

Alliance Memory Appoints Tanya Frew as Business Development Manager, Europe

Nathan — Tue, 20 Jun 2023 13:09:41 +0000

KIRKLAND, Wash. — June 14, 2023 — Alliance Memory today announced the appointment of Tanya Frew as the company's business development manager for Europe. In her new role, she is responsible for expanding Alliance Memory's business in the region, while assisting managing director Sue Macedo in day-to-day sales support for its growing customer base. Mrs. Frew comes to Alliance Memory from Micron Europe, where she served in a number of capacities over the last nine years. She joined the company as an order management specialist before being promoted to a combined role of inside sales representative, customer sales operations. Mrs. Frew concluded her tenure with Micron Europe as a sales operations analyst. In addition to establishing a successful excess inventory sales and quote process that was rolled out to other regions, she was recognized with multiple Culture Champion Awards and Spot Awards for beating revenue targets and identifying and improving gaps in the company's processes. She holds a degree from the University of Foreign Languages in Horlivka, Ukraine. "Through her work with Micron, Tanya not only gained invaluable knowledge of the semiconductor industry, but she also established key relationships with distributors and customers throughout Europe, which will be essential in helping us expand our footprint in the region," said Ms. Macedo. "Combined with her record of providing exceptional customer support, she is a perfect fit for this dual role, and I'm thrilled to welcome her to the Alliance Memory team." "Alliance Memory has long had a reputation for providing legacy devices that prevent costly redesigns for its customers. But its growth trajectory over the last few years — marked by the introduction of a diverse range of products — has been remarkable," said Mrs. Frew. "I'm excited for the opportunity to contribute to the company's continued success and look forward to leveraging the knowledge and experience I gained with Micron to support the company's existing customers and expansion efforts in Europe and beyond." Mrs. Frew is located in the UK and can be reached at Tanya@alliancememory.com.

16GB eMMC Solutions: Space-Saving

Nathan — Thu, 06 Jul 2023 13:38:51 +0000

Alliance Memory 16GB eMMC Solution Simplifies Designs and Saves Space in Consumer, Industrial, and Networking Applications; Compliant With JEDEC eMMC v5.1, Industrial-Grade Device Combines NAND Flash Memory With an eMMC Controller in a Single 153-Ball FBGA Package

KIRKLAND, Wash. — July 6, 2023 — Alliance Memory today introduced a new 16GB industrial-grade eMMC (embedded multi-media card) solution. For solid-state storage in consumer, industrial, and networking applications, the ASFC16G31M-51BIN integrates NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package. The device released today is compliant with the JEDEC eMMC v5.1 industry standard, supporting features such as boot operation, replay protected memory block (RPMB), device health report, field firmware updates, power-off notification, enhanced strobe features for faster and more reliable operation, write leveling, high-priority interrupt (HPI), secure trim/erase, and high-speed HS200 and HS400 modes. The ASFC16G31M-51BIN is also backwards-compatible with eMMC v4.5 and v5.0. The eMMC will be used in products such as smart watches, tablets, digital TVs, set-top boxes, VR and AR headsets, digital cameras, CCTV, surveillance, automation, point-of-sale systems, and emerging embedded applications. For designers, the ASFC16G31M-51BIN simplifies designs for fast and easy system integration in these products, speeding up product development and time to market while saving space by eliminating the need for an external controller. In addition, the device's FTL software provides high reliability and stable performance with wear levelling and bad block management. "eMMCs are a new focus product for Alliance Memory," said David Bagby, the company's president and CEO. "We are making a significant investment in this product portfolio, and with further, higher-density additions we'll be launching in Q3 2023, Alliance Memory is set to become one of the leading providers of eMMC technology." The ASFC16G31M-51BIN operates over an industrial temperature range of -40°C to +85°C and offers programmable bus widths of x1, x4, and x8. The device's NAND memory with internal LDO can be powered with a single 3V supply voltage, while the controller can be powered by 1.8V or 3V dual supply voltages. Samples of the eMMC are available now. Production quantities are available with lead times of 8 to 10 weeks. Pricing for U.S. delivery starts at approximately $6 per piece.

Alliance Memory Signs Rep Agreement With Electra Sales to Support Customers in Upstate New York

Nathan — Thu, 13 Jul 2023 14:23:02 +0000

KIRKLAND, Wash. — July 13, 2023 — Alliance Memory today announced that it has concluded an agreement with Electra Sales, a Rochester, New York-based manufacturers' sales representative for industry-leading semiconductor, electronic component, and embedded systems integration companies. Under the agreement, the company is now offering Alliance Memory's entire lineup of SRAM, DRAM, embedded multi-media card (eMMC), and flash memory ICs to its customers throughout Upstate New York. Electra Sales has been providing consultative sales services for the Upstate New York market since 1972, with a territory that consists of all counties north of, and including, Orange and Putnam. For the company's customers, Alliance Memory's legacy and innovative technology ICs offer reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions across a broad spectrum of applications and markets. Through its partnership with Alliance Memory, Electra Sales is offering its customers a full range of 3.3V and 5V fast asynchronous devices, synchronous SRAMs, PSRAMs, and low-power SRAMs; 5V parallel NOR and 1.8V and 3V SPI NAND flash ICs; and eMMC solutions. The company's broad portfolio of high-speed CMOS SDRAMs includes MSDR, DDR, DDR2, DDR3, DDR4, LPDDR, LPDDR2, and LPDDR4 devices in a wide range of densities, configurations, and package options. In addition, Electra Sales' customers have access to several discontinued devices from Micron Technology, including DDR, DDR3, DDR3L, and SDR SDRAMs, as well as NOR flash ICs. "In the dynamic and demanding marketplace of Upstate New York, Electra Sales has been a reliable source of customer-centric service for more than four decades," said Tom Gargan, director of sales for Canada, the Eastern U.S., and Brazil at Alliance Memory. "The company's collective sales experience, spanning 119 years, showcases a deep knowledge of the diverse segments it serves and a rock-solid understanding of their unique needs. We are thrilled to partner with Electra Sales, who will deliver unmatched service to our customers in the region while providing broader access to our rapidly expanding product portfolio." "At Electra Sales, we take pride in partnering with industry-leading manufacturers, and Alliance Memory undoubtedly fits that mold," said Mark Rogers, president and technical sales engineer at Electra Sales. "Over the last few years, as manufacturer's have continued to EOL memory devices, the company's portfolio has expanded significantly. This commitment to meeting market demand and eliminating the cost of redesigns aligns perfectly with our customer-first philosophy, and we couldn't be more excited to bring these solutions to the Upstate New York market."

Alliance Memory 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs Combine Low-Voltage Operation of 0.6V With Fast Clock Speeds to 1.86GHz; Solutions Offer ~50% Reduction in Power Consumption Compared to LPDDR4 Devices, Increasing Power Efficiency and Performance

Nathan — Tue, 18 Jul 2023 14:59:35 +0000

KIRKLAND, Wash. — July 17, 2023 — Alliance Memory today announced that it has expanded its offering of high-speed CMOS mobile low-power SDRAMs with four new LPDDR4X devices in a variety of densities. Offering an extension to the company's fourth-generation LPDDR4 SDRAMs, the 2Gb AS4C128M16MD4V-062BAN, 4Gb AS4C256M16MD4V-062BAN, 8Gb AS4C512M16MD4V-053BIN, and 16Gb AS4C512M32MD4V-053BIN deliver ~50% lower power ratings in the 200-ball FBGA package for higher power efficiency. With low-voltage operation of 0.6V — compared to 1.1V for LPDDR4 SDRAMs — the devices released today increase battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAMs deliver fast clock speeds up to 1.86GHz for extremely high transfer rates of 3.7Gbps. For automotive applications — including ADAS systems — the AEC-Q100-qualified AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN offer a temperature range of -40°C to +105°C and on-chip ECC for increased reliability. The AS4C512M16MD4V-053BIN and AS4C512M32MD4V-053BIN operate over an industrial temperature range of -40°C to +85°C. The AS4C512M16MD4V-053BIN, AS4C128M16MD4V-062BAN, and AS4C256M16MD4V-062BAN are organized as single-channel devices — each consisting of eight banks of 16 bits —while the AS4C512M32MD4V-053BIN offers two channels. All four components provide fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and selectable output drive strength. An on-chip temperature sensor controls the self-refresh rate. Alliance Memory's LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for costly redesigns and part requalification. Device Specification Table:

Part #	AS4C128M16MD4V-062BAN	AS4C256M16MD4V-062BAN	AS4C512M16MD4V-053BIN	AS4C512M32MD4V-053BIN
Density	2Gb	4Gb	8Gb	16Gb
Organization	128M x 16	256M x 16	512M x 16	512M x 32
VDD1 / VDD2 / VDDQ	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V
Package	200-ball TFBGA	200-ball TFBGA	200-ball TFBGA	200-ball TFBGA
Clock frequency	1600MHz	1600MHz	1866MHz	1866MHz
Data rate	3200Mbs	3200Mbs	3733Mbs	3733Mbs
Temp. range	-40°C to +105°C	-40°C to +105°C	-40°C to +85°C	-40°C to +85°C

Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of 12 weeks. Pricing for U.S. delivery ranges from $7.45 to $17.75 in small quantities.

Alliance Memory Introduces New Line of 1.8V and 3.3V SLC Parallel NAND Flash Memory Solutions; Compliant With the ONFI 1.0 Specification, 1Gb to 8Gb AS9F Series Devices Deliver Fast Block Erase Times Down to 3 ms

Nathan — Thu, 27 Jul 2023 15:07:40 +0000

KIRKLAND, Wash. — July 27, 2023 — To meet the increasing demand for legacy SLC parallel NAND flash memory products in the automotive, industrial, communications, and consumer electronics markets, Alliance Memory today introduced the new AS9F series of 1.8V and 3.3V devices with densities from 1Gb to 8Gb and fast block erase times down to 3 ms typical. "While new designs are migrating toward serial NAND flash for mass storage, many of our customers' existing designs still require parallel NAND flash solutions, which are becoming increasingly difficult to find," said David Bagby, president and CEO of Alliance Memory. "With our AS9F series, we're perfectly positioned to provide our customers with a reliable source for these cost-effective solutions moving forward, saving them the expense of redesigns." Compliant with the ONFI 1.0 specification and offering an x8 I/O interface, the memory solutions released today are ideal for use in chipsets for Wi-Fi routers, DSL and cable modems, set-top boxes, digital TVs, artificial intelligence (AI) speakers, Internet of Things (IoT) devices, and more. Divided into blocks that can be erased independently, AS9F series products allow valid data to be preserved in these applications while old data is erased. Delivering reliable, long-term performance, the parallel NAND flash devices feature 100,000 program/erase cycles — with 4-bit ECC per 528 bytes — and 10-year data retention. Offered in the 9.0 mm by 11.0 mm by 1.0 mm 63-ball FBGA package, the RoHS-compliant solutions are available in industrial (-40°C to +85°C) and automotive (-40°C to +105°C) temperature ranges. Device Specification Table:

Part #	Density	Bus Width	Vcc	Package	Temperature
AS9F31G08SA-25BIN	1Gb	x8	3.3V	63-ball FBGA	-40°C to +85°C
AS9F32G08SA-25BIN	2Gb	x8	3.3V	63-ball FBGA	-40°C to +85°C
AS9F34G08SA-25BIN	4Gb	x8	3.3V	63-ball FBGA	-40°C to +85°C
AS9F14G08SA-45BIN	4Gb	x8	1.8V	63-ball FBGA	-40°C to +85°C
AS9F38G08SA-25BIN	8Gb (DDP)	x8	3.3V	63-ball FBGA	-40°C to +85°C
AS9F18G08SA-45BIN	8Gb (DDP)	x8	1.8V	63-ball FBGA	-40°C to +85°C
AS9F14G08SA-45BAN	4Gb	x8	1.8V	63-ball FBGA	-40°C to +105°C
AS9F18G08SA-45BAN	8Gb (DDP)	x8	1.8V	63-ball FBGA	-40°C to +105°C

Samples and production quantities of the 1.8V and 3.3V SLC parallel NAND flash memory products are available now, with lead times of 12 weeks.

Alliance Memory Further Bolsters Presence in Asia With Appointment of Kelly Chien as Country Manager for Taiwan

Nathan — Mon, 26 Jun 2023 20:03:43 +0000

KIRKLAND, Wash. — June 26, 2023 — Alliance Memory today announced that it has further strengthened its market presence in Asia with the appointment of Kelly Chien as the company’s country manager for Taiwan. In her new role, she will work closely with Alliance Memory’s distribution partners to expand the company’s sales coverage in the country. Ms. Chien brings 17 years of experience in the semiconductor industry to Alliance Memory. She comes to the company from Inventec — a Taiwan-based manufacturer of notebook computers, servers, and mobile devices — where she held the position of server sales manager. Previously, as a program manager for Nanya Technology’s marketing division, Ms. Chien was responsible for a $44 million revenue increase over five years and proposed and developed three products. She began her career as an account manager for the Advance Semiconductor Engineering (ASE) Group’s Chong-Li branch. Ms. Chien holds a bachelor’s degree from Chia-Nan University of Pharmacy and Science, and a master’s degree from Taipei Medical University. "Recently, we’ve doubled-down on our efforts to expand our market presence in Asia, first in Korea, and now in Taiwan with Kelly at the helm,” said David Bagby, president and CEO of Alliance Memory. “With her deep knowledge of the Taiwanese semiconductor market and proven track record of driving revenue growth, whether through sales or marketing, she is the perfect fit to spearhead our efforts in the country. We couldn’t be more thrilled to welcome her to the Alliance team.” “I’m delighted to be joining Alliance Memory during this phase of momentous growth for the company, both in terms of its product offering and presence in Asia,” said Ms. Chien. “I look forward to contributing to the company’s ongoing success, leveraging my experience in the Taiwanese semiconductor market to expand and support its customer base in the country.” Ms. Chien is based in Alliance Memory’s Taoyuan office in Taiwan and reports to Mr. Bagby. She can be reached at Kelly@alliancememory.com.

eMMC Solutions: New 32GB-128GB with TLC NAND

Nathan — Thu, 21 Sep 2023 15:23:39 +0000

Alliance Memory introduces new 32GB, 64GB, and 128GB eMMC solutions. Designed to simplify applications in consumer, industrial, and networking sectors, these industrial-grade devices utilize TLC NAND Flash technology, ensuring enhanced reliability.

KIRKLAND, Wash. — Sept. 21, 2023 —

Alliance Memory today introduced new 32GB, 64GB, and 128GB industrial-grade eMMC (embedded multi-media card) solutions.

For solid-state storage in consumer, industrial, and networking applications, the ASFC32G31T3-51BIN , ASFC64G31T5-51BIN , and ASFC128G32T5-51BIN integrate high-reliability TLC NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package.

The devices released today are compliant with the JEDEC eMMC v5.1 industry standard, supporting features such as boot operation, replay protected memory block (RPMB), device health report, field firmware updates, power-off notification, enhanced strobe features for faster and more reliable operation, write leveling, high-priority interrupt (HPI), secure trim/erase, and high-speed HS200 and HS400 modes. The ASFC32G31T3-51BIN, ASFC64G31T5-51BIN, and ASFC128G32T5-51BIN are also backwards-compatible with eMMC v4.5 and v5.0.

The eMMCs will be used in products such as smart watches, tablets, digital TVs, set-top boxes, VR and AR headsets, digital cameras, CCTV, infotainment, surveillance, automation, point-of-sale systems, and emerging embedded applications. For designers, the ASFC32G31T3-51BIN, ASFC64G31T5-51BIN, and ASFC128G32T5-51BIN simplify designs for fast and easy system integration in these products, speeding up product development and time to market while saving space by eliminating the need for an external controller. In addition, the device's FTL software provides high reliability and stable performance with wear levelling and bad block management.

"With our latest eMMCs, we've extended our offering to include densities from 4GB all the way up to 128GB, providing designers with a wide range of options to meet their mass storage needs and solidifying our position as a leading supplier of eMMC technology," said David Bagby, president and CEO, Alliance Memory. "Furthermore, with their TLC NAND flash technology, our new 32GB, 64GB, and 128GB solutions deliver even higher reliability, endurance, and performance, while maintaining the same ease of integration as our lower density devices."

The ASFC32G31T3-51BIN, ASFC64G31T5-51BIN, and ASFC128G32T5-51BIN operate over an industrial temperature range of -40°C to +85°C and offer programmable bus widths of x1, x4, and x8. The device's NAND memory with internal LDO can be powered with a single 3V supply voltage, while the controller can be powered by 1.8V or 3V dual supply voltages.

Samples of the eMMCs are available now. Production quantities are available with lead times of eight to 10 weeks. Pricing for U.S. delivery starts at approximately $9 per piece for the 32GB ASFC32G31T3-51BIN, $12 per piece for the 64GB ASFC64G31T5-51BIN, and $18 per piece for the 128GB ASFC128G32T5-51BIN.
For more eMMC products : https://www.alliancememory.com/emmc/

Alliance Memory Appoints Kim Newman as Global Account Manager for Jabil

Nathan — Mon, 02 Oct 2023 15:15:03 +0000
KIRKLAND, Wash. — Oct. 2, 2023 — Alliance Memory today announced it has named Kim Newman as global account manager for Jabil, a leading contract manufacturer used by many of the company's customers. In her new role, Ms. Newman will serve as Alliance Memory's global liaison for Jabil — strengthening the two companies' long-term strategic relationship while promoting continued growth and enhancing customer satisfaction across North America, Asia, and Europe. Ms. Newman brings over 40 years of experience in the electronics industry to Alliance Memory. As owner and president of BlueSail Global Services, Inc., she has worked with Jabil for nine years as an independent global manufacturer's representative. Prior to that, she served in a variety of roles at manufacturer's representative Sun Marketing Group over a period of 21 years, including channel sales/operations manager and global key account manager. In addition, she has held the positions of product manager at Arrow Electronics and marketing coordinator at Harris Semiconductor/Intersil. "We are delighted to announce the addition of Kim to the Alliance Memory team," said David Bagby, president and CEO of Alliance Memory. "Her long history of working with Jabil — in addition to her close proximity to Jabil's headquarters in St. Petersburg, Florida — will ensure a smooth process for our customers that outsource their manufacturing to the company, while further strengthening the vital relationship between our organizations. We couldn't be more thrilled to have her on board." "It's great news to hear that Alliance Memory has hired Kim to further bolster the partnership between our two companies," said Brad Crouch, global commodity management at Jabil. "Having known Kim for many years, I'm confident she'll be an invaluable asset to the Alliance team, and instrumental in helping us continue to provide Alliance Memory solutions as viable memory options for our customers." "It's an exciting time to be joining Alliance Memory, a company that has not only solidified its reputation as a provider of legacy devices that prevent costly redesigns, but has also expanded its product portfolio with innovative solutions that are keeping it ahead of the curve," said Ms. Newman. "Drawing upon my direct experience working with Jabil, I'm enthusiastic about the opportunity to fortify the relationship between the two organizations, which ultimately benefits our existing customers while attracting new ones." Ms. Newman is located in Melbourne, Florida, and reports to Mr. Bagby. She can be reached at kimn@alliancememory.com.

Alliance Memory Introduces New 4Mb and 16Mb 3V Multiple I/O Serial NOR Flash Memory Solutions; Offered in SOP8 Narrow Body Package, Devices Deliver Enhanced Performance With Fast Read, Program, and Erase Times

Nathan — Tue, 14 Nov 2023 16:40:31 +0000
KIRKLAND, Wash. — Nov. 14, 2023 — Alliance Memory today announced that is has expanded its offering of 3V multiple input/output serial NOR flash memory products with new 4Mb and 16Mb devices in the SOP8 Narrow Body (150mils) package. The 4Mb AS25F304MD-10S1IN and 16Mb AS25F316MQ-10S1IN combine fast read performance up to 104MHz with fast program and erase times down to 1.1ms and 2.6ms, respectively. The devices released today operate from a single 2.7V to 3.6V power supply over an industrial temperature range of -40°C to +85°C. The AS25F304MD-10S1IN offers support for single and dual SPI operation, while the AS25F316MQ-10S1IN adds support for the quad SPI mode. The solutions offer maximum erase/program currents down to 1.3mA and maximum read currents down to 3.7mA at 104MHz, and they provide reliable, long-term performance with 100,000 program/erase cycles and 20-year data retention. The devices support uniform 4KB or 32KB or 64KB erase and feature program/erase suspend and resume. The AS25F316MQ-10S1IN also offers an 8/16/32/64 byte wrap-around burst read mode. Advanced security features include block protection, 128-bit unique ID for each device, a discoverable parameters (SFDP) register, and 4K-bit secured OTP to protect content from hostile access and inadvertent programming and erasing. With their enhanced performance, the serial NOR flash memory products are designed to meet the demands of the computer, consumer, communications, and IoT markets. The devices are ideal for use in chipsets for hard drives, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, digital cameras, Bluetooth® devices, handheld GPS units, smart meters, and more. Device Specification Table:

Part number
AS25F304MD-10S1IN

AS25F316MQ-10S1IN

Density
4Mb

16Mb

Bus width
Serial Multi IO (x1/x2/)

Serial Multi IO (x1/x2/x4)

V_CC
2.7V to 3.6V

Frequency
104MHz

Active read current max.
4.4mA

3.7mA

Program/erase current max.
1.4mA

1.3mA

Program time typ.
1.1ms

Sector erase time typ.
2.6ms

5.1ms

Standby current typ.
8mA

Temperature range
-40°C to +85°C

Package
SOP8 Narrow Body (150mils)

Samples and production quantities of the 3V serial NOR flash memory products are available now, with lead times of 8 to 12 weeks. Pricing for U.S. delivery starts at $0.80 for the AS25F304MD-10S1IN and $0.90 for the AS25F316MQ-10S1IN.

Alliance Memory 16Gb and 32Gb LPDDR4X SDRAMs Combine Low-Voltage Operation of 0.6V With Fast Clock Speeds of 2.133GHz and High Data Rates of 4.2Gbps; Devices Increase Power Efficiency and Performance in Consumer, Commercial, and Industrial Applications, Extend Battery Life in Portable Electronics

Nathan — Thu, 02 May 2024 21:01:52 +0000
KIRKLAND, Wash. — May 2, 2024 — Alliance Memory today announced that it has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new 16Gb and 32Gb LPDDR4X devices that combine low power ratings with increased clock speeds and data rates in the 200-ball FBGA package. With low-voltage operation of 0.6V, the 16Gb AS4C512M32MD4V-046BIN and 32Gb AS4C1G32MD4V-046BIN deliver higher power efficiency for increased battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAMs deliver high clock frequencies of 2.133GHz for extremely high data rates of 4.2Gbps. Offering a 32-bit bus width, the devices operate over an industrial temperature range of -40°C to +95°C. The AS4C512M32MD4V-046BIN and AS4C1G32MD4V-046BIN are organized as two channels per device, with individual channels consisting of eight banks of 16 bits. The components provide fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and configurable drive strength. An on-chip temperature sensor controls the self-refresh rate. Alliance Memory's LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for costly redesigns and part requalification. Device Specification Table:

Part #
AS4C512M32MD4V-046BIN

AS4C1G32MD4V-046BIN

Density
16Gb

32Gb

Organization
512M x 32

1G x 32

VDD1 / VDD2 / VDDQ
1.8V / 1.1V / 0.6V

1.8V / 1.1V / 0.6V

Package
200-ball TFBGA

200-ball TFBGA

Clock frequency
2133MHz

2133MHz

Data rate
4266Mbps

4266Mbps

Temp. range
-40°C to +95°C

-40°C to +95°C

Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of 12 weeks.

Alliance Memory Appoints Zvi Barak as Sales Director

Nathan — Wed, 12 Jun 2024 13:25:31 +0000
KIRKLAND, Wash. — June 12, 2024 — Alliance Memory today announced the appointment of Zvi Barak as the company's sales director. In his new role, Mr. Barak will be responsible for overseeing Alliance Memory's sales in EMEA as the company continues to expand its global customer base. Mr. Barak comes to Alliance Memory from Future Electronics, where he served in a number of capacities over the last 18 years. He joined the company as a technical manager for Future Israel before being promoted to the role of country manager, in which he served for 10 years. Mr. Barak concluded his tenure with Future as regional technical director for Eastern Europe. Previously, he held the roles of Israel country manager for Cypress Semiconductor and ASIC designer for Israel Aerospace Industries. Mr. Barak holds a Bachelor of Science in electrical engineering from Ben-Gurion University of the Negev and an MBA from Leicester University. "Zvi has extensive leadership experience in the semiconductor industry, with an impressive track record of driving sales growth and demand creation," said David Bagby, president and CEO of Alliance Memory. "We couldn't be more thrilled to welcome him to Alliance Memory, where he'll be instrumental in shaping our sales efforts — and ultimately increasing revenues — around the world." "With my background at Future Electronics, I'm very familiar with Alliance Memory's product lineup and the benefits it brings to a wide range of industries," said Mr. Barak. "I'm very excited to be joining the team and can't wait to leverage my knowledge and experience to build up the company's customer base in EMEA and beyond." Mr. Barak reports to David Bagby. He's located in Tel Aviv-Yafo and can be reached at zvi@alliancememory.com.

AS4C128M8D1 6TIN

Teresa — Thu, 06 Jul 2017 17:58:16 +0000

New LPDDR2 SDRAMS

Teresa — Thu, 06 Jul 2017 18:04:26 +0000

32bit Fast SRAMs

Teresa — Thu, 06 Jul 2017 18:26:37 +0000

AS4C32M8SA-7TCN

Nathan — Fri, 26 Jan 2018 18:16:33 +0000

AS4C32M16D

Nathan — Wed, 07 Feb 2018 19:00:53 +0000

AS6C6416

Nathan — Wed, 07 Feb 2018 19:09:57 +0000

Low Power SDRAMs

Nathan — Tue, 08 May 2018 15:30:14 +0000

Cypress

Nathan — Tue, 09 Oct 2018 15:26:24 +0000

PSRAM

Nathan — Wed, 24 Oct 2018 14:47:05 +0000

AS4C16M32SC-7TIN

Nathan — Tue, 06 Nov 2018 17:01:51 +0000

AutomotiveGrade

Nathan — Mon, 07 Jan 2019 17:43:20 +0000

AS4C512M16D3L

Nathan — Fri, 25 Jan 2019 16:26:27 +0000

Dual8G

Nathan — Thu, 25 Apr 2019 15:21:40 +0000

MobileDDRUpdate

Nathan — Fri, 03 May 2019 14:12:09 +0000

Alliance Memory Expands eMMC Offering With New 5GB and 10GB 3D pSLC Solutions; Simplifying Designs and Saving Space in Consumer, Industrial, and Networking Applications, Industrial-Grade Devices Provide Enhanced Reliability and Endurance Over 30K Program/Erase Cycles

Nathan — Wed, 10 Jul 2024 15:07:49 +0000
KIRKLAND, Wash. — July 10, 2024 — Alliance Memory today introduced new industrial-grade 3D pSLC embedded multi-media card (eMMC) solutions for solid-state storage in consumer, industrial, and networking applications. Offering 30,000 program/erase cycles, the 5GB ASFC5G31P3-51BIN and 10GB ASFC10G31P3-51BIN integrate high-reliability 3D pSLC NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm by 1 mm 153-ball FBGA package. The devices released today are compliant with the JEDEC eMMC v5.1 industry standard, supporting features such as boot operation, replay protected memory block (RPMB), device health report, field firmware updates, power-off notification, enhanced strobe features for faster and more reliable operation, write leveling, high-priority interrupt (HPI), secure trim/erase, and high-speed HS200 and HS400 modes. The ASFC5G31P3-51BIN and ASFC10G31P3-51BIN are also backwards-compatible with eMMC v4.5 and v5.0. Featuring a 32MB boot partition, the eMMCs will be used in products such as smart watches, tablets, digital TVs, set-top boxes, VR and AR headsets, digital cameras, CCTV, infotainment, surveillance, automation, point-of-sale systems, and emerging embedded applications. For designers, the ASFC5G31P3-51BIN and ASFC10G31P3-51BIN simplify designs for fast and easy system integration in these products, speeding up product development and time to market while saving space by eliminating the need for an external controller. In addition, the device's FTL software provides high reliability and stable performance with wear levelling and bad block management. "With the introduction of these new enhanced-mode 3D pSLC parts, we've further solidified our position as a leading provider of eMMC technology," said David Bagby, president and CEO, Alliance Memory. "For our customers, these lower-density devices offer higher reliability and endurance than MLC and TLC NAND solutions while delivering the same ease of integration and space savings." The ASFC5G31P3-51BIN and ASFC10G31P3-51BIN operate over an industrial temperature range of -40°C to +85°C and offer programmable bus widths of x1, x4, and x8. The devices' NAND memory with internal LDO can be powered with a single 3V supply voltage, while the controller can be powered by 1.8V or 3V dual supply voltages. Samples of the eMMCs are available now. Production quantities are available with lead times of eight weeks. Pricing for U.S. delivery starts at approximately $7 per piece for the ASFC5G31P3-51BIN and $8 per piece for the ASFC10G31P3-51BIN.

Visit Alliance Memory at electronica 2024

gafie — Wed, 21 Aug 2024 22:43:11 +0000

November 12–15, 2024 Hall B5 stand 300, Trade Fair Center Messe München, Germany
Schedule a meeting with us!

Alliance Memory Single-Channel 16Gb LPDDR4X SDRAM Combines Low-Voltage Operation of 0.6V With Fast Clock Speeds of 2.133GHz and High Data Rates of 4.2Gbps; Device Increases Power Efficiency and Performance in Consumer, Commercial, and Industrial Applications, While Extending Battery Life in Portable Electronics

Nathan — Mon, 16 Sep 2024 12:40:38 +0000
KIRKLAND, Wash. — September 12, 2024 — Alliance Memory today announced that it has expanded its offering of high-speed CMOS mobile low-power SDRAMs with a new single-channel 16Gb LPDDR4X device that combines low power ratings with increased clock speeds and data rates in the 200-ball FBGA package. With low-voltage operation of 0.6V, the AS4C1G16MD4V-046BIN delivers higher power efficiency for increased battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, wearables, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAM delivers a high clock frequency of 2.133GHz for an extremely high data rate of 4.2Gbps. The device operates over an industrial temperature range of -40°C to +95°C. The AS4C1G16MD4V-046BIN’s single channel consists of eight banks of 16 bits. The component provides fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and configurable drive strength. An on-chip temperature sensor controls the self-refresh rate. Alliance Memory’s LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for costly redesigns and part requalification. Samples and production quantities of the AS4C1G16MD4V-046BIN are available now, with lead times of eight weeks with six-month forecast. Pricing for U.S. delivery ranges between $15 and $18.

Alliance Memory Introduces Six New 8Gb, 16Gb, and 32Gb CMOS DDR4 SDRAMs; Devices Combine Low 1.2V Power Consumption With Fast Clock Speeds of 1600MHz and Transfer Rates of 3200 MT/s in 78-Ball and 96-Ball FBGA Packages

Nathan — Mon, 04 Nov 2024 16:06:34 +0000
KIRKLAND, Wash.— Nov. 4, 2024 — Alliance Memory today announced that it has expanded its portfolio of CMOS DDR4 SDRAMs with six new 8Gb, 16Gb, and 32Gb devices in 78-ball FBGA and 96-ball FBGA packages. Providing the company's customers with higher-density options for a wide range of applications, the AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN are built on a new process technology to deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. To increase battery life in portable electronics such as smartphones and tablets, the DDR4 SDRAMs released today feature a low operating voltage of +1.2V (±0.06V). The devices are designed, qualified, and recommended for use in 5G and IoT designs; computing applications; surveillance, gaming, and networking storage systems; smart meters; human-machine interfaces (HMI), digital signal controllers, and PNDs; and more. Built on an 8n-prefetch architecture, the devices offer fast clock speeds of 1600MHz and transfer rates of 3200 MT/s. The AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN support sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in the commercial (0°C to +95°C) temperature range, the devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets. Device Specification Table:

Part #

Density

Organization

Package

Speed

Temp. range (°C)

AS4C512M16D4B-62BCN
8Gb

512M x 16

96-ball FBGA

1600MHz

0 to +95

AS4C1G8D4B-62BCN
8Gb

1Gb x 8

78-ball FBGA

1600MHz

0 to +95

AS4C1G16D4A-62BCN
16Gb

1Gb x 16

96-ball FBGA

1600MHz

0 to +95

AS4C2G8D4A-62BCN
16Gb

2Gb x 8

78-ball FBGA

1600MHz

0 to +95

AS4C2G16D4-62BCN
32Gb

2Gb x 16

96-ball FBGA

1600MHz

0 to +95

AS4C4G8D4-62BCN
32Gb

4Gb x 8

78-ball FBGA

1600MHz

0 to +95

Samples and production quantities of the AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN are available now, with lead times of four weeks.

Alliance Memory Expands Serial NOR Flash Portfolio With New High-Density Devices; Devices Offer Increased Storage and Performance for a Wide Range of Applications

Nathan — Tue, 12 Nov 2024 16:00:13 +0000
KIRKLAND, Wash. — Nov. 12, 2024 — Alliance Memory today announced the expansion of its Serial NOR Flash product line with the introduction of three new 3.3 V families with density of 128Mb, 256Mb, and 512Mb. These new products include the AS25F3128MQ-6SIN, AS25F3128MQ-6WINTR, AS25F3256MQ-7S2INTR, AS25F3256MQ-7W2INTR, AS25F3512MQ-7S2INTR, and AS25F3512MQ-7W2INTR, which are now available for embedded applications that require reliable, high-performance code storage and execution. The new Serial NOR Flash devices are designed to address the growing demand for higher-density memory solutions in computing, consumer electronics, communication, and IoT applications. They support Single, Dual, and Quad I/O SPI and QPI interfaces and offer fast read frequencies up to 166 MHz for 128Mb devices and 133 MHz for 256Mb and 512Mb devices. Additionally, these devices provide uniform 4KB, 32KB, and 64KB erase capabilities; program/erase suspend and resume functions; and endurance exceeding 100,000 program/erase cycles. “With the introduction of these new high-density Serial NOR Flash devices, we are expanding our offerings to meet the needs of customers looking for reliable memory solutions in a wide range of applications,” said David Bagby, President and CEO of Alliance Memory. “These devices offer high performance and flexibility, making them an ideal choice for applications ranging from mobile PCs, servers, and laptops to digital TVs, printers, and connectivity modules.” The new devices are designed to simplify system integration and enhance product reliability by offering power supply lock-down and OTP protection features. They also provide high-bandwidth read, erase, and program capabilities, ensuring optimal performance in critical applications. Samples of the new Serial NOR Flash devices are available now. Pricing for U.S. delivery ranges from $1 to $3 per piece.

Alliance Memory to Feature Latest Innovations at Embedded World 2025; New 32Mb Fast SRAM, DDR4 and LPDDR4X SDRAMs, and High-Density Serial NOR Flash Devices to Be Showcased

Nathan — Mon, 03 Mar 2025 16:10:12 +0000
KIRKLAND, Wash.— March 3, 2025 — Alliance Memory will display its expanded product portfolio at Embedded World 2025, taking place March 11-13 at the Nuremberg Exhibition Centre in Nuremberg, Germany. In Stand 3A-215, the company will introduce its new 32Mb fast SRAM, DDR4 and LPDDR4X SDRAMs, and high-density Serial NOR Flash devices, all of which enhance device performance with higher density, low power consumption, and rapid data transfer rates to meet the needs of modern applications. "Our latest offerings underscore our commitment to meeting the evolving needs of the market with memory solutions that boost efficiency and reliability," said David Bagby, president and CEO of Alliance Memory. "The new 32Mb fast SRAM, advanced DDR4 and LPDDR4X SDRAMs, and our high-capacity Serial NOR Flash devices are designed to provide our customers with the performance they require for today's competitive technology landscape." FEATURED PRODUCTS 32Mb Fast SRAM: Alliance Memory's newly introduced 32Mb fast SRAM in a 48-ball FBGA package provides a wide power supply range and fast access times, making it ideal for a variety of high-speed applications. DDR4 SDRAMs: The company has expanded its CMOS DDR4 SDRAM offerings with 8Gb, 16Gb, and 32Gb devices that combine fast clock speeds up to 1600MHz and transfer rates up to 3200MT/s. The DDR4 SDRAM are available in 78-ball and 96-ball FBGA packages. LPDDR4X SDRAM: For mobile and high-performance applications, the new 16Gb LPDDR4X device features increased clock speeds and higher data rates in a 200-ball FBGA package. High-Density Serial NOR Flash Devices: New additions to the Serial NOR Flash family include 128Mb, 256Mb, and 512Mb densities, offering flexible, high-performance memory solutions for a broad range of applications, from mobile PCs to connectivity modules. To schedule an appointment with Alliance Memory at Embedded World 2025 or for more information about the company's new products, please contact Bob Decker at bob.decker@redpinesgroup.com.

NOR_Flash_Banner_PR

Nathan — Wed, 11 Sep 2019 17:32:30 +0000

DDR4

Nathan — Thu, 10 Oct 2019 18:46:24 +0000

NOR_Flash

Nathan — Wed, 26 Aug 2020 17:45:11 +0000

SPI NAND Flash

Nathan — Thu, 17 Sep 2020 17:24:55 +0000

8GB DDR4

Nathan — Wed, 30 Sep 2020 16:04:11 +0000

LPDDR4_PR

Nathan — Tue, 15 Dec 2020 16:46:09 +0000

MicronJ3_PR_Banner

Nathan — Mon, 08 Feb 2021 16:56:39 +0000

LPDDR4X_PR_Banner

Nathan — Wed, 14 Jul 2021 15:12:00 +0000

AS25F_NPA_Banner

Nathan — Wed, 20 Oct 2021 17:30:25 +0000

JEDEC eMMC v5.1, 4GB eMMC, 8GB eMMC

Nathan — Tue, 04 Jan 2022 18:21:45 +0000

1899_Header_mailingwork_neues_Datum_EN

gafie — Thu, 28 Apr 2022 00:34:34 +0000

embedded_world_2022

gafie — Thu, 28 Apr 2022 02:07:58 +0000

embedded-2022-canva-2

gafie — Thu, 28 Apr 2022 04:03:15 +0000

5

gafie — Wed, 11 May 2022 18:34:59 +0000

4

gafie — Wed, 11 May 2022 18:35:02 +0000

3

gafie — Wed, 11 May 2022 18:35:08 +0000

1

gafie — Wed, 11 May 2022 18:35:17 +0000

LPDDR4:x

gafie — Wed, 11 May 2022 18:43:24 +0000

World’s leading trade fair and conference for electronics November 15–18, 2022 Trade Fair Center Messe München (2)

gafie — Thu, 04 Aug 2022 09:01:31 +0000

DDDR4_PR

Nathan — Thu, 08 Sep 2022 17:15:30 +0000

Serial_NOR-Flash_PR

Nathan — Tue, 03 Jan 2023 16:45:02 +0000

LPSRAM_PR

Nathan — Wed, 25 Jan 2023 15:14:25 +0000

16 Gb DDR4

Nathan — Tue, 14 Feb 2023 18:03:53 +0000

Alliance-eMMC-16GB-PRbanner

Nathan — Thu, 06 Jul 2023 13:36:14 +0000

LPDDR4x_PR

Nathan — Tue, 18 Jul 2023 14:56:01 +0000

AS9F38G08SA_PR_Banner

Nathan — Thu, 27 Jul 2023 15:04:59 +0000

eMMC_32-128Gb_PR_banner

Nathan — Thu, 21 Sep 2023 15:21:04 +0000

4Mb_16Mb Serial NOR Flash_PR

Nathan — Tue, 14 Nov 2023 16:39:18 +0000

LPDDR4x

Nathan — Thu, 02 May 2024 20:58:22 +0000

pSLC_PR

Nathan — Wed, 10 Jul 2024 15:04:58 +0000

electronica2024

gafie — Wed, 21 Aug 2024 22:42:49 +0000

AS4C1G16MD4V-046BIN_PR_banner

Nathan — Tue, 10 Sep 2024 14:20:55 +0000

DDR4_PR

Nathan — Mon, 04 Nov 2024 12:52:34 +0000

Serial_NOR_Flash_PR

Nathan — Mon, 11 Nov 2024 13:46:57 +0000

Part number	AS25F304MD-10S1IN	AS25F316MQ-10S1IN
Density	4Mb	16Mb
Bus width	Serial Multi IO (x1/x2/)	Serial Multi IO (x1/x2/x4)
V_CC	2.7V to 3.6V
Frequency	104MHz
Active read current max.	4.4mA	3.7mA
Program/erase current max.	1.4mA	1.3mA
Program time typ.	1.1ms
Sector erase time typ.	2.6ms	5.1ms
Standby current typ.	8mA
Temperature range	-40°C to +85°C
Package	SOP8 Narrow Body (150mils)

Part #	AS4C512M32MD4V-046BIN	AS4C1G32MD4V-046BIN
Density	16Gb	32Gb
Organization	512M x 32	1G x 32
VDD1 / VDD2 / VDDQ	1.8V / 1.1V / 0.6V	1.8V / 1.1V / 0.6V
Package	200-ball TFBGA	200-ball TFBGA
Clock frequency	2133MHz	2133MHz
Data rate	4266Mbps	4266Mbps
Temp. range	-40°C to +95°C	-40°C to +95°C