SAN CARLOS, Calif. —April 25, 2019 — Alliance Memory today introduced new dual-die 8Gb DDR3L SDRAMs that are pin-for-pin drop-in replacements for and fully compatible with end-of-life, single-die 8Gb DDR3Ls from Micron Technology Inc.
|Alliance Memory Part Number
|8 banks x 128M x 8
|8 banks x 64M x 16
“When Micron announced a last-time buy date for some of its most popular 8Gb DDR3L single-die SDRAMs, we responded by offering the original Micron part numbers, along with Alliance Memory identical replacements of the monolithic devices,” said David Bagby, president and CEO of Alliance Memory. “In keeping with our commitment to supporting our customers’ legacy SDRAM needs, we’re excited to now announce the immediate availability of dual-die-package 8Gb DDR3L SDRAMs for long-term support and new designs.”
Featuring a DDR architecture, the AS4C1G8D3LA and AS4C512M16D3LAprovide speed of 10ns, extremely fast data rates of 1866Mbps, and clock rates of 933MHz. Operating from a single +1.35V power supply, with backward compatibility to 1.5V, the SDRAMs are optimized for main memory applications in laptops, desktops, servers, and embedded / industrial designs. The devices are available in commercial (0°C to +95°C), industrial (-40°C to +95°C), and automotive (-40°C to +105°C) temperature ranges.
The AS4C1G8D3LA and AS4C512M16D3LAsupport sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.
Learn more about Alliance Memory’s offering of single- and dual-die 8Gb DDR3L SDRAMs at https://www.alliancememory.com/micron-eol-8g-ddr3l-sdrams-now-available-direct-from-alliance-memory/.
Samples and production quantities of the dual-die AS4C1G8D3LA and AS4C512M16D3LAare available now, with lead times of six to eight weeks. Pricing depends on density, configuration, and order size.