The News: Alliance Memory announces that it has expanded its portfolio of CMOS DDR4 SDRAMs with a new 16Gb device in the 96-ball FBGA package. Providing the company’s customers with a higher-density option for a wide range of applications, the AS4C1G16D4-062BCN delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption and higher speeds and transfer rates.
Part Number: AS4C1G16D4-062BCN
Key Specifications and Benefits:
- 96-ball FBGA package
- Low operating voltage of +1.2V (±0.06V)
- Built on an 8n-prefetch architecture for fast clock speeds up to 1600MHz and transfer rates up to 3200MT/s
- Supports sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly
- An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
- Easy-to-use refresh functions include auto- or self-refresh
- Commercial (0°C to +95°C) temperature range
Target Applications:
- Portable electronics, such as smartphones and tablets
- 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
The Context: Built on an 8n-prefetch architecture, the 1Gb x 16-bit AS4C1G16D4-062BCN not only offers Alliance Memory’s customers a higher-density option for industrial, networking, telecommunications, gaming, and consumer markets, it delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption down to +1.2V (±0.06V) and higher speeds and transfer rates of 1600MHz and 3200 MT/s, respectively. With minimal die shrinks, the DDR4 SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification.
Availability: Samples and production quantities of the AS4C1G16D4-062BCN are in stock and available now.
Link to product datasheet and Buy Now information: AS4C1G16D4-062BCN
The News: Alliance Memory has expanded its portfolio of low power asynchronous SRAM (LPSRAM) products with new 1Mb and 4Mb devices that feature embedded error-correction code (ECC). Compared to previous-generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER) for more reliable operation in a wide range of consumer, industrial, communications, and medical applications.
The News: Alliance Memory announces that the company has expanded its AS25F series of multiple input/output serial NOR flash memory products with two new 1.8V, 128Mb devices. Offering support for single, dual, and quad SPI modes — with a QPI function — the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN combine fast read performance up to 133MHz with fast page program and sector erase times of 0.3ms and 60ms typical, respectively.
The News: Alliance Memory announces that it has expanded its portfolio of CMOS DDR4 SDRAMs with new “A” die versions of the 4Gb AS4C256M16D4 and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. Built on a finer process that results in a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. In addition, Alliance Memory is continuing its partnership with Micron Technology and offering the company’s MT40A1G16KH-062E DDR4 SDRAM to provide customers with a 16Gb option.
