The News: Alliance Memory announces that the company has expanded its AS25F series of multiple input/output serial NOR flash memory products with two new 1.8V, 128Mb devices. Offering support for single, dual, and quad SPI modes — with a QPI function — the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN combine fast read performance up to 133MHz with fast page program and sector erase times of 0.3ms and 60ms typical, respectively.

Part Numbers: AS25F1128MQ-70SIN, AS25F1128MQ-70WIN

Part number	AS25F1128MQ-70SIN	AS25F1128MQ-70WIN
Density	128Mb
Bus width	Serial Multi IO (x1/x2/x4)
VCC	1.65V to 1.95V
Speed	133MHz
Active read current max.	27mA
Power down current max.	20µA
Standby current max.	70µA
Temperature range	-40°C to +85°C
Package	8-pin SOP (208mils)	8L WSON (6mm x 5mm)

Key Specifications and Benefits:

• Operate in single, dual, and quad SPI modes, with a QPI function
• Fast performance:
  • 133MHz clock operation
  • Program times of 0.3s
  • Erase times of 60ms
• Available in 8-pin SOP Wide Body (208mils) and 8L WSON (6x5mm) packages
• Low power consumption:
  • Operate from a single 1.65V to 1.95V power supply
  • Active read current as low as 5mA
  • <3µA typical in Deep Power-Down mode
• Industrial temperature range of -40°C to +85°C
• Reliable, long-term performance with 100,000 program/erase cycles
• Uniform 4KB or 32KB or 64KB erase
• 8/16/32/64byte wrap-around burst read mode
• Program/erase suspend and resume
• Advanced security features protect content from hostile access and inadvertent programming and erasing:
  • Block protection
  • 4K-bit secured OTP

Target Applications:

• Chipsets for PCs, servers, laptops, optical disc drives, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, mobile and wearable devices, digital cameras, and more

The Context: Alliance Memory’s new 1.8V, 128Mb multiple input/output serial NOR flash memory products combine fast read, program, and erase times with low power consumption and advanced security features in the 8-pin SOP Wide Body (208mils) and 8L WSON (6x5mm) packages. With their enhanced performance, the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN are designed to meet the demands of the computer, consumer, communications, IoT, and mobile markets.

Availability: Samples and production quantities of the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN are in stock and available now.

Link to product datasheets and Buy Now information: AS25F1128MQ-70SIN and AS25F1128MQ-70WIN

The News: Alliance Memory announces that it has expanded its portfolio of CMOS DDR4 SDRAMs with new “A” die versions of the 4Gb AS4C256M16D4 and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. Built on a finer process that results in a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. In addition, Alliance Memory is continuing its partnership with Micron Technology and offering the company’s MT40A1G16KH-062E DDR4 SDRAM to provide customers with a 16Gb option.

Parts Table:

Part #	Density	Organization	Package	Speed	Temp. range (°C)
AS4C256M16D4-83BCN	4Gb	256M x 16	96-ball FBGA	1200MHz	0 to +95
AS4C256M16D4-83BIN	4Gb	256M x 16	96-ball FBGA	1200MHz	-40 to +95
AS4C256M16D4-75BCN	4Gb	256M x 16	96-ball FBGA	1333MHz	0 to +95
AS4C256M16D4-75BIN	4Gb	256M x 16	96-ball FBGA	1333MHz	-40 to +95
AS4C256M16D4A-62BCN	4Gb	256M x 16	96-ball FBGA	1600MHz	0 to +95
AS4C256M16D4A-62BIN	4Gb	256M x 16	96-ball FBGA	1600MHz	-40 to +95
AS4C256M16D4A-75BCN	4Gb	256M x 16	96-ball FBGA	1333MHz	0 to +95
AS4C256M16D4A-75BIN	4Gb	256M x 16	96-ball FBGA	1333MHz	-40 to +95
AS4C512M8D4-83BCN	4Gb	512M x 8	78-ball FBGA	1200MHz	0 to +95
AS4C512M8D4-83BIN	4Gb	512M x 8	78-ball FBGA	1200MHz	-40 to +95
AS4C512M8D4-75BCN	4Gb	512M x 8	78-ball FBGA	1333MHz	0 to +95
AS4C512M8D4-75	4Gb	512M x 8	78-ball FBGA	1333MHz	-40 to +95
AS4C512M8D4A-75BCN	4Gb	512M x 8	78-ball FBGA	1333MHz	0 to +95
AS4C512M8D4A-75BIN	4Gb	512M x 8	78-ball FBGA	1333MHz	-40 to +95
AS4C512M16D4-75BCN	8Gb	512M x 16	96-ball FBGA	1333MHz	0 to +95
AS4C512M16D4-75BIN	8Gb	512M x 16	96-ball FBGA	1333MHz	-40 to +95
AS4C1G8D4-75BCN	8Gb	1Gb x 8	78-ball FBGA	1333MHz	0 to +95
AS4C1G8D4-75BIN	8Gb	1Gb x 8	78-ball FBGA	1333MHz	-40 to +95
MT40A1G16KH-062E	16Gb	1Gb x 16	96-ball FBGA	1600MHz	0 to +95

Key Specifications and Benefits:

• 4Gb Alliance Memory DDR4 SDRAMs
• Low operating voltages of +1.2V (±0.06V)
• Built on a new process technology for fast clock speeds up to 1600MHz and transfer rates up to 3200Mbps
• Support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly
• An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
• Easy-to-use refresh functions include auto- or self-refresh
• Offered in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges
• 16Gb Micron Technology DDR4 SDRAM
• Operates from a +1.2V power supply over a commercial temperature range
• Built on an 8n-prefetch architecture for high data rates of 3200 MT/s
• Supports read or write burst lengths of BC4 or BL8 on the fly

Target Applications:

• Portable electronics, such as smartphones and tablets
• 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

The Context: Built on a finer process that results in a smaller chip than the original 4Gb AS4C256M16D4A and AS4C512M8D4 DDR4 SDRAMs, Alliance Memory’s new “A” die versions deliver improved performance — with lower power consumption down to +1.2V (±0.06V), faster clock speeds to 1600MHz, and higher transfer rates to 3200Mbps — at a lower cost. With minimal die shrinks, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. The new “A” die devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity. The addition of Micron Technology’s MT40A1G16KH-062E to Alliance Memory’s offering of DDR4 SDRAMs provides the company’s customers with access to a 16Gb device for a wide range of applications.

Availability: Samples and production quantities of the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN are available now, with lead times of eight to 12 weeks. Micron’s MT40A1G16KH-062E is available now from stock.

Product Datasheet:

https://www.alliancememory.com/datasheets/AS4C256M16D4A/ (AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, and AS4C256M16D4A-75BIN)

https://www.alliancememory.com/datasheets/MT40A1G16KH-062E/ (MT40A1G16KH-062E)

https://www.alliancememory.com/datasheets/as4c512m8d4a/ (AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN)

The News: Alliance Memory announces a new line of 3V multiple input/output serial NOR flash memory products designed to provide supply continuity for customers utilizing discontinued Micron Technology N25Q series devices as well as equivalents from other suppliers such as the W25Q, AT25Q, S25F, MX25L, IS25L and GD25Q series. Offering support for single, dual, and quad SPI modes, the AS25F series combines fast read performance up to 104MHz with fast program and erase times of 0.3ms and 40ms typical, respectively.

Part numbers: AS25F364MQ-10SIN, AS25F364MQ-10WIN

Key Benefits:

• Operates in single, dual, and quad I/O SPI modes
• High performance and high bandwidth read, erase, and program
• Uniform 4KB, 32KB, and 64KB erase
• Advanced security features (block protection, OTP)
• Program/erase, suspend and resume
• Burst read

Device Specification Table:

Part number	AS25F364MQ-10SIN	AS25F364MQ-10WIN
Density	64Mb
Bus width	Serial Multi IO (x1/x2/x4)
VCC	2.7V to 3.6V
Frequency	104MHz
Active read current max.	25mA
Program / erase current max.	25mA
Standby current max.	10µA
Temperature range	-40°C to +85°C
Package	8-pin SOP Wide Body (209 mils)	8L WSON (6mm x 5mm)

Target Applications:

• Computing, including notebook PCs, data storage
• Consumer electronics, including DVD and BluRay players, printers, set-top boxes, mobile phones, digital cameras, wearables
• Communications systems, including WLANs, DSL / cable modems, GPS
• Industrial systems, including IoT, smart meters

Availability: Samples and production quantities of the 3V serial NOR flash memory products are available now, with lead times of 16 to 20 weeks.

Link to product datasheets and Buy Now information: AS25F364MQ-10SIN and AS25F364MQ-10WIN

The News: Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with a new LPDDR4X device featuring on-chip ECC. Offering an extension to the company’s fourth-generation LPDDR4 SDRAMs, the 8Gb AS4C256M32MD4V-062BAN offers ~50% lower power ratings in the 200-ball FBGA package for higher power efficiency.

Part Numbers: AS4C256M32MD4V-062BAN

Key Specifications and Benefits:

• On-chip ECC
• AEC-Q100 qualified
• Low-voltage operation of 6V/1.1V/1.8V
• Fast clock speeds of 1.6GHz
• Extremely high transfer rates of 3.2Gbps
• -40°C to +105°C operating temperature range
• Organized as two channels per device
  • Eight internal x16 banks per channel
• Fully synchronous operation
• Programmable read and write burst lengths of 16, 32, and on the fly
• Selectable output drive strength
• On-chip temperature sensor controls the self-refresh rate
• Offered in the 200-ball FBGA package

Target Applications:

• 5G, AI, and IoT
• Portable electronics for the consumer, commercial, and industrial markets
• Automotive ADAS systems

The Context: Offering an extension to Alliance Memory’s fourth-generation LPDDR4 SDRAMs, the company’s new 8Gb LPDDR4X device with on-chip ECC offers ~50% lower power consumption to increase battery life in portable electronics for the consumer, commercial, and industrial markets, including smart phones, smart speakers, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the AS4C256M32MD4V-062BAN delivers fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications — including ADAS systems — the AEC-Q100 qualified device operates over a temperature range of -40°C to +105°C.

Alliance Memory’s LPDDR4X SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification.

Availability: Samples and production quantities of the AS4C256M32MD4V-062BAN are available now, with lead times of 12 weeks.

Product Datasheet:
https://www.alliancememory.com/as4c256m32md4v/ (AS4C256M32MD4V-062BAN)