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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

New Product Announcements

New 32GB, 64GB, and 128GB eMMC Solutions

The News: Alliance Memory introduces new 32GB, 64GB, and 128GB industrial-grade embedded multi-media card (eMMC) solutions. For solid-state storage in consumer, industrial, and networking applications, the devices integrate high-reliability TLC NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package.

Part Numbers:

  • 32GB ASFC32G31T3-51BIN
  • 64GB ASFC64G31T5-51BIN
  • 128GB ASFC128G32T5-51BIN

Key Specifications and Benefits:

  • Feature high-reliability TLC NAND flash technology
  • Compliant with the JEDEC eMMC v5.1 industry standard to support features such as:
    • Boot operation
    • Replay protected memory block (RPMB)
    • Device health report
    • Field firmware updates
    • Power-off notification
    • Enhanced strobe features for faster and more reliable operation
    • Write leveling
    • High-priority interrupt (HPI)
    • Secure trim/erase
    • High-speed HS200 and HS400 modes
  • Backwards-compatible with eMMC v4.5 and v5.0
  • Operate over an industrial temperature range of -40°C to +85°C
  • Offer programmable bus widths of x1, x4, and x8
  • NAND memory with internal LDO can be powered with a single 3V supply voltage
  • The controller can be powered by 1.8V or 3V dual supply voltages

Target Applications:

  • Smart watches, tablets, digital TVs, set-top boxes, VR and AR headsets, digital cameras, CCTV, infotainment, surveillance, automation, point-of-sale systems, and emerging embedded applications

The Context: Alliance Memory has extended its offering of eMMCs to include densities from 4GB all the way up to 128GB, providing designers with a wide range of options to meet their solid-state storage needs in consumer, industrial, and networking applications. The devices integrate TLC NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package. With their TLC NAND flash technology, the devices deliver even higher reliability, endurance, and performance, while maintaining the same ease of integration as the company’s lower density eMMCs, speeding up product development and time to market, while saving space by eliminating the need for an external controller.

Compliant with the JEDEC eMMC v5.1 industry standard, the eMMCs support a wide range of features such as boot operation, replay protected memory block (RPMB), device health report, field firmware updates, power-off notification, enhanced strobe features for faster and more reliable operation, write leveling, high-priority interrupt (HPI), secure trim/erase, and high-speed HS200 and HS400 modes. The devices are also backwards-compatible with eMMC v4.5 and v5.0.

Availability: Samples of the eMMCs are available now. Production quantities are available with lead times of 8 to 10 weeks.

Link to product datasheets and Buy Now information: ASFC32G31T3-51BIN, ASFC64G31T5-51BIN, and ASFC128G32T5-51BIN.

New 1.8V and 3.3V SLC Parallel NAND Flash

The News: To meet the increasing demand for legacy SLC parallel NAND flash memory products in the automotive, industrial, communications, and consumer electronics markets, Alliance Memory introduces the new AS9F series of 1.8V and 3.3V devices with densities from 1Gb to 8Gb and fast block erase times down to 3ms typical.

Part Numbers: AS9F31G08SA-25BIN, AS9F32G08SA-25BIN, AS9F34G08SA-25BIN, AS9F14G08SA-45BIN, AS9F38G08SA-25BIN, AS9F18G08SA-45BIN, AS9F14G08SA-45BAN, and AS9F18G08SA-45BAN

Key Specifications and Benefits:

  • 1.8V and 3.3V VCC
  • Densities from 1Gb to 8Gb
  • Fast block erase times down to 3 ms typical
  • Compliant with the ONFI 1.0 specification
  • x8 I/O interface
  • Divisible into independently erasable blocks
    • Allows valid data to be preserved, while old data is erased
  • Reliable, long-term performance
    • 100,000 program/erase cycles — with 4-bit ECC per 528 bytes
    • 10-year data retention
  • Offered in the 9.0 mm by 11.0 mm by 1.0 mm 63-ball FBGA package
  • Available in industrial (-40°C to +85°C) and automotive (-40°C to +105°C) temperature ranges
  • RoHS-compliant
Part # Density Bus Width VCC Package Temperature
AS9F31G08SA-25BIN 1Gb x8 3.3V 63-ball FBGA -40°C to +85°C
AS9F32G08SA-25BIN 2Gb x8 3.3V 63-ball FBGA -40°C to +85°C
AS9F34G08SA-25BIN 4Gb x8 3.3V 63-ball FBGA -40°C to +85°C
AS9F14G08SA-45BIN 4Gb x8 1.8V 63-ball FBGA -40°C to +85°C
AS9F38G08SA-25BIN 8Gb (DDP) x8 3.3V 63-ball FBGA -40°C to +85°C
AS9F18G08SA-45BIN 8Gb (DDP) x8 1.8V 63-ball FBGA -40°C to +85°C
AS9F14G08SA-45BAN 4Gb x8 1.8V 63-ball FBGA -40°C to +105°C
AS9F18G08SA-45BAN 8Gb (DDP) x8 1.8V 63-ball FBGA -40°C to +105°C

Target Applications:

  • Wi-Fi routers, DSL and cable modems, set-top boxes, digital TVs, artificial intelligence (AI) speakers, Internet of Things (IoT) devices, and more

The Context: While new designs in the automotive, industrial, communications, and consumer electronics markets are migrating toward serial NAND flash for mass storage, many manufacturers’ existing designs still require parallel NAND flash solutions, which are becoming increasingly difficult to find. With Alliance Memory’s AS9F series of 1.8V and 3.3V devices with densities from 1Gb to 8Gb, the company is perfectly positioned to provide its customers with a reliable source for these cost-effective solutions moving forward, saving them the expense of redesigns.

Availability: Samples and production quantities of the 1.8V and 3.3V SLC parallel NAND flash memory products are available now, with lead times of 12 weeks.

Link to product datasheets and Buy Now information: AS9F31G08SA-25BIN, AS9F32G08SA-25BIN, AS9F34G08SA-25BIN, AS9F14G08SA-45BIN, AS9F38G08SA-25BIN, AS9F18G08SA-45BIN, AS9F14G08SA-45BAN, and AS9F18G08SA-45BAN

New 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs

The News: Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with four new LPDDR4X devices in a variety of densities. Offering an extension to the company’s fourth-generation LPDDR4 SDRAMs, the 2Gb AS4C128M16MD4V-062BAN, 4Gb AS4C256M16MD4V-062BAN, 8Gb AS4C512M16MD4V-053BIN, and 16Gb AS4C512M32MD4V-053BIN deliver ~50% lower power ratings in the 200-ball FBGA package for higher power efficiency.

Part Numbers: AS4C128M16MD4V-062BAN, AS4C256M16MD4V-062BAN, AS4C512M16MD4V-053BIN, and AS4C512M32MD4V-053BIN

Benefits:

  • Available in densities from 2Gb to 16Gb
  • Low-voltage operation of 0.6V
  • Fast clock speeds up to 1.86GHz
  • Extremely high transfer rates of 3.7Gbps
  • AEC-Q100-qualified with on-chip ECC for increased reliability (AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN)
  • Available in automotive (-40°C to +105°C) and industrial (40°C to +85°C) temperature ranges
  • Organized as single-channel (AS4C512M16MD4V-053BIN, AS4C128M16MD4V-062BAN, and AS4C256M16MD4V-062BAN) and dual-channel (AS4C512M32MD4V-053BIN) devices
    • Eight internal x16 banks per channel
  • Fully synchronous operation
  • Programmable read and write burst lengths of 16, 32, and on the fly
  • Selectable output drive strength
  • On-chip temperature sensor controls the self-refresh rate
  • Offered in the 200-ball FBGA package

Device Specification Table:

Part # AS4C128M16MD4V-062BAN AS4C256M16MD4V-062BAN AS4C512M16MD4V-053BIN AS4C512M32MD4V-053BIN
Density 2Gb 4Gb 8Gb 16Gb
Organization 128M x 16 256M x 16 512M x 16 512M x 32
VDD1 / VDD2 / VDDQ 1.8V / 1.1V / 0.6V 1.8V / 1.1V / 0.6V 1.8V / 1.1V / 0.6V 1.8V / 1.1V / 0.6V
Package 200-ball TFBGA 200-ball TFBGA 200-ball TFBGA 200-ball TFBGA
Clock Frequency 1600MHz 1600MHz 1866MHz 1866MHz
Data Rate 3200Mbps 3200Mbps 3733Mbps 3733Mbps
Temperature Range -40°C to +105°C -40°C to +105°C -40°C to +85°C -40°C to +85°C

Target Applications:

  • 5G, AI, and IoT
  • Portable electronics for the consumer, commercial, and industrial markets
  • Automotive ADAS systems

The Context: Offering an extension to Alliance Memory’s fourth-generation LPDDR4 SDRAMs, the company’s new 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X devices deliver ~50% lower power consumption to increase battery life in portable electronics for the consumer, commercial, and industrial markets, including smart phones, smart speakers, security surveillance systems, and other IoT devices utilizing AI and 5G technologies. Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the AS4C128M16MD4V-062BAN, AS4C256M16MD4V-062BAN, AS4C512M16MD4V-053BIN, and AS4C512M32MD4V-053BIN deliver fast clock speeds up to 1.86GHz for extremely high transfer rates of 3.7Gbps. For automotive applications — including ADAS systems — the AEC-Q100-qualified AS4C128M16MD4V-062BAN and AS4C256M16MD4V-062BAN offer a temperature range of -40C to +105C and on-chip ECC for increased reliability.

Alliance Memory’s LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification.

Availability: Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of 12 weeks.

Link to product datasheets and Buy Now information: AS4C128M16MD4V-062BAN, AS4C256M16MD4V-062BAN, AS4C512M16MD4V-053BIN, and AS4C512M32MD4V-053BIN

New 16GB eMMC Solution

The News: Alliance Memory introduces a new 16GB industrial-grade embedded multi-media card (eMMC) solution. For solid-state storage in consumer, industrial, and networking applications, the ASFC16G31M-51BIN integrates NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package.

Part Number: ASFC16G31M-51BIN

Key Specifications and Benefits:

  • Compliant with the JEDEC eMMC v5.1 industry standard to support features such as:
    • Boot operation
    • Replay protected memory block (RPMB)
    • Device health report
    • Field firmware updates
    • Power-off notification
    • Write leveling
    • High-priority interrupt (HPI)
    • Secure trim/erase
    • High-speed HS200 and HS400 modes
  • Backwards-compatible with eMMC v4.5 and v5.0
  • Operates over an industrial temperature range of -40°C to +85°C
  • Offers programmable bus widths of x1, x4, and x8
  • NAND memory with internal LDO can be powered with a single 3V supply voltage
  • The controller can be powered by 1.8V or 3V dual supply voltages

Target Applications:

  • Smart watches, smart phones, tablets, digital TVs, set-top boxes, VR and AR headsets, system on modules (SOM), computer on modules (COM), digital cameras, CCTV, surveillance, automation, point-of-sale systems, and emerging embedded applications

The Context: For solid-state storage in consumer, industrial, and networking applications, Alliance Memory’s new 16GB ASFC16G31M-51BIN eMMC solution integrates NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package. For designers, the device simplifies designs for fast and easy system integration — speeding up product development and time to market — while saving space by eliminating the need for an external controller. In addition, the device’s FTL software provides high reliability and stable performance with wear levelling and bad block management.

Compliant with the JEDEC eMMC v5.1 industry standard, the eMMC supports a wide range of features such as boot operation; replay protected memory block (RPMB); device health report; field firmware updates; power-off notification; enhanced strobe features for faster and more reliable operation; write leveling; high-priority interrupt (HPI); secure trim/erase; and high-speed HS200 and HS400 modes. The ASFC16G31M-51BIN is also backwards-compatible with eMMC v4.5 and v5.0.

Availability: Samples and production quantities of the eMMC are available now, with lead times of 12 weeks.

Link to product datasheets and Buy Now information: ASFC16G31M-51BIN

New 16Gb DDR4 SDRAM

The News: Alliance Memory announces that it has expanded its portfolio of CMOS DDR4 SDRAMs with a new 16Gb device in the 96-ball FBGA package. Providing the company’s customers with a higher-density option for a wide range of applications, the AS4C1G16D4-062BCN delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption and higher speeds and transfer rates.

Part Number: AS4C1G16D4-062BCN

Key Specifications and Benefits:

  • 96-ball FBGA package
  • Low operating voltage of +1.2V (±0.06V)
  • Built on an 8n-prefetch architecture for fast clock speeds up to 1600MHz and transfer rates up to 3200MT/s
  • Supports sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly
  • An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Commercial (0°C to +95°C) temperature range

Target Applications:

  • Portable electronics, such as smartphones and tablets
  • 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

The Context: Built on an 8n-prefetch architecture, the 1Gb x 16-bit AS4C1G16D4-062BCN not only offers Alliance Memory’s customers a higher-density option for industrial, networking, telecommunications, gaming, and consumer markets, it delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption down to +1.2V (±0.06V) and higher speeds and transfer rates of 1600MHz and 3200 MT/s, respectively. With minimal die shrinks, the DDR4 SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification.

Availability: Samples and production quantities of the AS4C1G16D4-062BCN are in stock and available now.

Link to product datasheet and Buy Now information: AS4C1G16D4-062BCN

 

New 1Mb and 4Mb LPSRAM

The News: Alliance Memory has expanded its portfolio of low power asynchronous SRAM (LPSRAM) products with new 1Mb and 4Mb devices that feature embedded error-correction code (ECC). Compared to previous-generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER) for more reliable operation in a wide range of consumer, industrial, communications, and medical applications.

Part Numbers: AS6CE4016B-45ZIN, AS6CE4016B-45BIN, AS6CE1016A-45ZIN

Key Benefits:

  • Available in densities of 1Mb and 4Mb
  • Embedded ECC provides 1-bit error correction per byte
  • 1.5V data retention voltage
  • Typical data retention current:
    • 1µA for the 1Mb AS6CE1016A
    • 2µA for the 4Mb AS6CE4016B
  • Operate from a single power supply of 2.7V to 3.6V
  • All inputs and outputs are fully TTL compatible

Device Specification Table:

Part number Organization VCC range Access time Operating temperature Package
AS6CE4016B-45ZIN 256K x 16 2.7 – 3.6V 45 ns -40 ~ 85°C 44-pin 400 mil TSOP II
AS6CE4016B-45BIN 256K x 16 2.7 – 3.6V 45 ns -40 ~ 85°C 48-ball 6mm x 8mm FBGA
AS6CE1016A-45ZIN 64K x 16 2.7 – 3.6V 45 ns -40 ~ 85°C 44-pin 400 mil TSOP II

Target Applications:

  • Routers and switches in communications systems; programmable logic controllers in industrial automation systems; printers, gaming machines, musical instruments, and calculators; vending machines and ATMs; and elevator systems, control panels, and fire control systems

The Context: The ECC feature of Alliance Memory’s new LPSRAMs provides 1-bit error correction per byte, which makes the devices particularly suitable for low-power applications and battery backup non-volatile memory applications. Compared to previous generation solutions, the AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better FIT and MTTF characteristics, with reduced SER for more reliable operation in a very wide range of applications.

Availability: Samples and production quantities of the AS6CE1016A (1Mb) and AS6CE4016B (4Mb) are in stock and available now.

Link to product datasheets and Buy Now information: AS6CE4016B-45ZIN, AS6CE4016B-45BIN, and AS6CE1016A-45ZIN