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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

New Product Announcements

February 13, 2023

New 16Gb DDR4 SDRAM

The News: Alliance Memory announces that it has expanded its portfolio of CMOS DDR4 SDRAMs with a new 16Gb device in the 96-ball FBGA package. Providing the company’s customers with a higher-density option for a wide range of applications, the AS4C1G16D4-062BCN delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption and higher speeds and transfer rates.

Part Number: AS4C1G16D4-062BCN

Key Specifications and Benefits:

  • 96-ball FBGA package
  • Low operating voltage of +1.2V (±0.06V)
  • Built on an 8n-prefetch architecture for fast clock speeds up to 1600MHz and transfer rates up to 3200MT/s
  • Supports sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly
  • An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Commercial (0°C to +95°C) temperature range

Target Applications:

  • Portable electronics, such as smartphones and tablets
  • 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

The Context: Built on an 8n-prefetch architecture, the 1Gb x 16-bit AS4C1G16D4-062BCN not only offers Alliance Memory’s customers a higher-density option for industrial, networking, telecommunications, gaming, and consumer markets, it delivers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption down to +1.2V (±0.06V) and higher speeds and transfer rates of 1600MHz and 3200 MT/s, respectively. With minimal die shrinks, the DDR4 SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification.

Availability: Samples and production quantities of the AS4C1G16D4-062BCN are in stock and available now.

Link to product datasheet and Buy Now information: AS4C1G16D4-062BCN

 

January 24, 2023

New 1Mb and 4Mb LPSRAM

The News: Alliance Memory has expanded its portfolio of low power asynchronous SRAM (LPSRAM) products with new 1Mb and 4Mb devices that feature embedded error-correction code (ECC). Compared to previous-generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER) for more reliable operation in a wide range of consumer, industrial, communications, and medical applications.

Part Numbers: AS6CE4016B-45ZIN, AS6CE4016B-45BIN, AS6CE1016A-45ZIN

Key Benefits:

  • Available in densities of 1Mb and 4Mb
  • Embedded ECC provides 1-bit error correction per byte
  • 1.5V data retention voltage
  • Typical data retention current:
    • 1µA for the 1Mb AS6CE1016A
    • 2µA for the 4Mb AS6CE4016B
  • Operate from a single power supply of 2.7V to 3.6V
  • All inputs and outputs are fully TTL compatible

Device Specification Table:

Part number Organization VCC range Access time Operating temperature Package
AS6CE4016B-45ZIN 256K x 16 2.7 – 3.6V 45 ns -40 ~ 85°C 44-pin 400 mil TSOP II
AS6CE4016B-45BIN 256K x 16 2.7 – 3.6V 45 ns -40 ~ 85°C 48-ball 6mm x 8mm FBGA
AS6CE1016A-45ZIN 64K x 16 2.7 – 3.6V 45 ns -40 ~ 85°C 44-pin 400 mil TSOP II

Target Applications:

  • Routers and switches in communications systems; programmable logic controllers in industrial automation systems; printers, gaming machines, musical instruments, and calculators; vending machines and ATMs; and elevator systems, control panels, and fire control systems

The Context: The ECC feature of Alliance Memory’s new LPSRAMs provides 1-bit error correction per byte, which makes the devices particularly suitable for low-power applications and battery backup non-volatile memory applications. Compared to previous generation solutions, the AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better FIT and MTTF characteristics, with reduced SER for more reliable operation in a very wide range of applications.

Availability: Samples and production quantities of the AS6CE1016A (1Mb) and AS6CE4016B (4Mb) are in stock and available now.

Link to product datasheets and Buy Now information: AS6CE4016B-45ZIN, AS6CE4016B-45BIN, and AS6CE1016A-45ZIN

 

December 6, 2022

1.8V, 128Mb Multiple I/O Serial NOR Flash Memory

The News: Alliance Memory announces that the company has expanded its AS25F series of multiple input/output serial NOR flash memory products with two new 1.8V, 128Mb devices. Offering support for single, dual, and quad SPI modes — with a QPI function — the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN combine fast read performance up to 133MHz with fast page program and sector erase times of 0.3ms and 60ms typical, respectively.

Part Numbers: AS25F1128MQ-70SIN, AS25F1128MQ-70WIN

Part number AS25F1128MQ-70SIN AS25F1128MQ-70WIN
Density 128Mb
Bus width Serial Multi IO (x1/x2/x4)
VCC 1.65V to 1.95V
Speed 133MHz
Active read current max. 27mA
Power down current max. 20µA
Standby current max. 70µA
Temperature range -40°C to +85°C
Package 8-pin SOP (208mils) 8L WSON (6mm x 5mm)

Key Specifications and Benefits:

  • Operate in single, dual, and quad SPI modes, with a QPI function
  • Fast performance:
    • 133MHz clock operation
    • Program times of 0.3s
    • Erase times of 60ms
  • Available in 8-pin SOP Wide Body (208mils) and 8L WSON (6x5mm) packages
  • Low power consumption:
    • Operate from a single 1.65V to 1.95V power supply
    • Active read current as low as 5mA
    • <3µA typical in Deep Power-Down mode
  • Industrial temperature range of -40°C to +85°C
  • Reliable, long-term performance with 100,000 program/erase cycles
  • Uniform 4KB or 32KB or 64KB erase
  • 8/16/32/64byte wrap-around burst read mode
  • Program/erase suspend and resume
  • Advanced security features protect content from hostile access and inadvertent programming and erasing:
    • Block protection
    • 4K-bit secured OTP

Target Applications:

  • Chipsets for PCs, servers, laptops, optical disc drives, DVD and Blu-ray players, wireless LANs and cable modems, printers, set-top boxes, LCD displays, mobile and wearable devices, digital cameras, and more

The Context: Alliance Memory’s new 1.8V, 128Mb multiple input/output serial NOR flash memory products combine fast read, program, and erase times with low power consumption and advanced security features in the 8-pin SOP Wide Body (208mils) and 8L WSON (6x5mm) packages. With their enhanced performance, the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN are designed to meet the demands of the computer, consumer, communications, IoT, and mobile markets.

Availability: Samples and production quantities of the AS25F1128MQ-70SIN and AS25F1128MQ-70WIN are in stock and available now.

Link to product datasheets and Buy Now information: AS25F1128MQ-70SIN and AS25F1128MQ-70WIN

August 29, 2022

Six New 4Gb “A” Die DDR4 SDRAMs and a 16Gb Option From Micron Technology

The News: Alliance Memory announces that it has expanded its portfolio of CMOS DDR4 SDRAMs with new “A” die versions of the 4Gb AS4C256M16D4 and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. Built on a finer process that results in a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost. In addition, Alliance Memory is continuing its partnership with Micron Technology and offering the company’s MT40A1G16KH-062E DDR4 SDRAM to provide customers with a 16Gb option.

Parts Table:

Part # Density Organization Package Speed Temp. range (°C)
AS4C256M16D4-83BCN 4Gb 256M x 16 96-ball FBGA 1200MHz 0 to +95
AS4C256M16D4-83BIN 4Gb 256M x 16 96-ball FBGA 1200MHz -40 to +95
AS4C256M16D4-75BCN 4Gb 256M x 16 96-ball FBGA 1333MHz 0 to +95
AS4C256M16D4-75BIN 4Gb 256M x 16 96-ball FBGA 1333MHz -40 to +95
AS4C256M16D4A-62BCN 4Gb 256M x 16 96-ball FBGA 1600MHz 0 to +95
AS4C256M16D4A-62BIN 4Gb 256M x 16 96-ball FBGA 1600MHz -40 to +95
AS4C256M16D4A-75BCN 4Gb 256M x 16 96-ball FBGA 1333MHz 0 to +95
AS4C256M16D4A-75BIN 4Gb 256M x 16 96-ball FBGA 1333MHz -40 to +95
AS4C512M8D4-83BCN 4Gb 512M x 8 78-ball FBGA 1200MHz 0 to +95
AS4C512M8D4-83BIN 4Gb 512M x 8 78-ball FBGA 1200MHz -40 to +95
AS4C512M8D4-75BCN 4Gb 512M x 8 78-ball FBGA 1333MHz 0 to +95
AS4C512M8D4-75 4Gb 512M x 8 78-ball FBGA 1333MHz -40 to +95
AS4C512M8D4A-75BCN 4Gb 512M x 8 78-ball FBGA 1333MHz 0 to +95
AS4C512M8D4A-75BIN 4Gb 512M x 8 78-ball FBGA 1333MHz -40 to +95
AS4C512M16D4-75BCN 8Gb 512M x 16 96-ball FBGA 1333MHz 0 to +95
AS4C512M16D4-75BIN 8Gb 512M x 16 96-ball FBGA 1333MHz -40 to +95
AS4C1G8D4-75BCN 8Gb 1Gb x 8 78-ball FBGA 1333MHz 0 to +95
AS4C1G8D4-75BIN 8Gb 1Gb x 8 78-ball FBGA 1333MHz -40 to +95
MT40A1G16KH-062E 16Gb 1Gb x 16 96-ball FBGA 1600MHz 0 to +95

Key Specifications and Benefits:

  • 4Gb Alliance Memory DDR4 SDRAMs
  • Low operating voltages of +1.2V (±0.06V)
  • Built on a new process technology for fast clock speeds up to 1600MHz and transfer rates up to 3200Mbps
  • Support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly
  • An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Offered in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges
  • 16Gb Micron Technology DDR4 SDRAM
  • Operates from a +1.2V power supply over a commercial temperature range
  • Built on an 8n-prefetch architecture for high data rates of 3200 MT/s
  • Supports read or write burst lengths of BC4 or BL8 on the fly

Target Applications:

  • Portable electronics, such as smartphones and tablets
  • 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs

The Context: Built on a finer process that results in a smaller chip than the original 4Gb AS4C256M16D4A and AS4C512M8D4 DDR4 SDRAMs, Alliance Memory’s new “A” die versions deliver improved performance — with lower power consumption down to +1.2V (±0.06V), faster clock speeds to 1600MHz, and higher transfer rates to 3200Mbps — at a lower cost. With minimal die shrinks, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. The new “A” die devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity. The addition of Micron Technology’s MT40A1G16KH-062E to Alliance Memory’s offering of DDR4 SDRAMs provides the company’s customers with access to a 16Gb device for a wide range of applications.

Availability: Samples and production quantities of the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN are available now, with lead times of eight to 12 weeks. Micron’s MT40A1G16KH-062E is available now from stock.

Product Datasheet:

https://www.alliancememory.com/datasheets/AS4C256M16D4A/ (AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, and AS4C256M16D4A-75BIN)

https://www.alliancememory.com/datasheets/MT40A1G16KH-062E/ (MT40A1G16KH-062E)

https://www.alliancememory.com/datasheets/as4c512m8d4a/ (AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN)

February 1, 2022

New 4GB and 8GB eMMC Solutions

The News: Alliance Memory introduces two new industrial-grade embedded multi-media card (eMMC) solutions. For solid-state storage in consumer, industrial, and networking applications, the 4GB ASFC4G31M-51BIN and 8GB ASFC8G31M-51BIN each integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package.

Part Numbers: ASFC4G31M-51BIN and ASFC8G31M-51BIN

Key Specifications and Benefits:

  • Compliant with the JEDEC eMMC v5.1 industry standard to support features such as:
    • Boot operation
    • Replay protected memory block (RPMB)
    • Device health report
    • Field firmware updates
    • Power off notification
    • Enhanced strobe features for faster and more reliable operation
    • Write leveling
    • High-priority interrupt (HPI)
    • Secure trim/erase
    • High-speed HS200 and HS400 modes
  • Backwards-compatible with eMMC v4.5 and v5.0
  • Operate over an industrial temperature range of -40°C to +85°C
  • Offer programmable bus widths of x1, x4, and x8
  • NAND memory with internal LDO can be powered with a single 3V supply voltage
  • The controller can be powered by 1.8V or 3V dual supply voltages

Target Applications:

  • Smart watches, tablets, digital TVs, set-top boxes, VR and AR headsets, digital cameras, infotainment, CCTV, surveillance, automation, point-of-sale systems and emerging embedded applications

The Context: For solid-state storage in consumer, industrial, and networking applications, Alliance Memory’s new 4GB ASFC4G31M-51BIN and 8GB ASFC8G31M-51BIN eMMC solutions integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single 11.5 mm by 13 mm 153-ball FBGA package. For designers, the devices simplify designs for fast and easy system integration — speeding up product development and faster time to market — while saving space by eliminating the need for an external controller. In addition, the devices’ FTL software provides high reliability and stable performance with wear levelling and bad block management.

Compliant with the JEDEC eMMC v5.1 industry standard, the eMMCs support a wide range of features such as boot operation; replay protected memory block (RPMB); device health report; field firmware updates; power off notification; enhanced strobe features for faster and more reliable operation; write leveling; high-priority interrupt (HPI); secure trim/erase; and high-speed HS200 and HS400 modes. The ASFC4G31M-51BIN and ASFC8G31M-51BIN are also backwards-compatible with eMMC v4.5 and v5.0.

Availability: Samples and production quantities of the eMMCs will be available in Q1 2022, with lead times of 12 weeks.

Link to Product Datasheets and Buy Now information: https://www.alliancememory.com/emmc/

Link to Product Introduction Video: https://youtu.be/a4LgvKF9gbw

October 20, 2021

3V, 64Mb Multiple I/O Serial NOR N25Q Replacement Flash Memory Solutions

The News: Alliance Memory announces a new line of 3V multiple input/output serial NOR flash memory products designed to provide supply continuity for customers utilizing discontinued Micron Technology N25Q series devices as well as equivalents from other suppliers such as the W25Q, AT25Q, S25F, MX25L, IS25L and GD25Q series. Offering support for single, dual, and quad SPI modes, the AS25F series combines fast read performance up to 104MHz with fast program and erase times of 0.3ms and 40ms typical, respectively.

Part numbers: AS25F364MQ-10SIN, AS25F364MQ-10WIN

Key Benefits:

  • Operates in single, dual, and quad I/O SPI modes
  • High performance and high bandwidth read, erase, and program
  • Uniform 4KB, 32KB, and 64KB erase
  • Advanced security features (block protection, OTP)
  • Program/erase, suspend and resume
  • Burst read

Device Specification Table:

Part number AS25F364MQ-10SIN AS25F364MQ-10WIN
Density 64Mb
Bus width Serial Multi IO (x1/x2/x4)
VCC 2.7V to 3.6V
Frequency 104MHz
Active read current max. 25mA
Program / erase current max. 25mA
Standby current max. 10µA
Temperature range -40°C to +85°C
Package 8-pin SOP Wide Body (209 mils) 8L WSON (6mm x 5mm)

Target Applications:

  • Computing, including notebook PCs, data storage
  • Consumer electronics, including DVD and BluRay players, printers, set-top boxes, mobile phones, digital cameras, wearables
  • Communications systems, including WLANs, DSL / cable modems, GPS
  • Industrial systems, including IoT, smart meters

Availability: Samples and production quantities of the 3V serial NOR flash memory products are available now, with lead times of 16 to 20 weeks.

Link to product datasheets and Buy Now information: AS25F364MQ-10SIN and AS25F364MQ-10WIN

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