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Alliance Memory

Manufacturer of Legacy Memory SRAM, DRAM, and Flash ICs

New Product Announcements

New Product Announcement:New 512-Mb High-Speed Mobile SDR SDRAMs

AS4C32M16MS and AS4C16M32MS: New 512-Mb High-Speed Mobile SDR SDRAMs

AS4C32M16MSThe News: Alliance Memory introduces two new high-speed CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life
in mobile devices. Featuring low power consumption of 1.8 V and a number of power-saving features, the 512-Mb AS4C32M16MS and AS4C16M32MS are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages.

Key Specifications and Benefits:

  • Low power consumption of 1.8 V
  • Offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm
    90-ball FPBGA packages
  • Power-saving features:
    • Auto temperature-compensated self-refresh (TCSR)
    • Partial-array self-refresh (PASR)
    • Deep power down (DPD)
  • Internally configured as 4 banks x 8 Mbit x 16 and 4 banks x 4 Mbit x 32
  • High-speed operation with clock rates up to 166 MHz
  • Available in extended commercial (-25 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges
  • Fully synchronous operation
  • Programmable read or write burst lengths of 1, 2, 4, or 8
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Lead (Pb)- and halogen-free

Target Applications:

  • Portable consumer electronics, medical equipment, and networking and telecommunications devices

The Context: As devices such as smartphones and tablets become ubiquitous, consumers have begun to rely on mobile apps more than websites, and the vast majority utilize their smartphones when making purchasing decisions. This has made extending battery life more important than ever, and reducing a DRAM’s average power consumption can have a big impact.

Alliance Memory’s new AS4C32M16MS and AS4C16M32MS deliver these power savings in a compact footprint optimized for space-constrained designs. The MSDRs feature auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required.

As the number of mobile SDR SDRAM suppliers continues to decrease, Alliance Memory is offering designers a new source and shorter lead times for DRAMs with the low power consumption they require. The company’s AS4C32M16MS and AS4C16M32MS provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking and telecommunications devices.

Availability: Samples and production quantities of the new MSDRs are available now, with lead times of eight weeks for production quantities.

Click to download the AS4C32M16MS and AS4C16M32MS datasheets.

Contact David Bagby, david@alliancememory.com, +1 650 610-6800

 

New Product Announcement: New Monolithic High-Speed, Low-Voltage 1G x 8 CMOS DDR3L SDRAM

AS4C1G8MD3L: New Monolithic High-Speed, Low-Voltage 1G x 8 CMOS DDR3L SDRAM
AS4C1G8MD3L
The News: Alliance Memory introduces a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gb density in the 78-ball, 9-mm by 13.2-mm, lead (Pb)-free FBGA package. Delivering increased power efficiency for high-end computer and storage systems, the 1G x 8 AS4C1G8MD3L offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.

Key Specifications and Benefits:

  • Internally configured as eight banks of 1G x 8 bits
  • Offered in the 78-ball, 9-mm by 13.2-mm FBGA package
  • Extremely fast transfer rates of up to 1600 Mbps/pin
  • Clock rates of 800 MHz
  • Operates from a single +1.35-V power supply
  • Available with an extended commercial temperature range of 0 °C to +95 °C (AS4C1G8MD3L-12BCN)
  • Fast 64-ms, 8192-cycle refresh from 0 °C to +85 °C and 32 ms from +85 °C to +95 °C
  • Fully synchronous operation
  • Programmable read or write burst lengths of 4 or 8
  • Auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Programmable mode register allows the system to choose the most suitable modes to maximize performance
  • Lead (Pb)-free

Target Applications:

  • Industrial, medical, networking, telecom, and aerospace applications

The Context: Featuring a double data rate architecture, the AS4C1G8MD3L’s transfer rates are twice as high as DDR and DDR2 SDRAMs, providing higher bandwidth for newer-generation microprocessors in industrial, medical, networking, telecom, and aerospace applications. Backwards-compatible with +1.5-V power supplies to enable large memory subsystems, the device is a logical choice for customers that require increased memory yet face board space constraints.

In addition to the 1G x 8 AS4C1G8MD3L, Alliance Memory also offers the 512M x 16 AS4C512M16D3L in the 96-ball FBGA package, which is available in an extended commercial temperature range (AS4C512M16D3L-12BCN) and an industrial temperature range from -40 °C to +95 °C (AS4C512M16D3L-12BIN). Alliance Memory is one of the few suppliers of monolithic DDR3L SDRAMs with high densities to 8 Gb. In addition, with minimal die shrinks, the single-die AS4C1G8MD3L provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions — eliminating the need for costly redesigns and part requalification.

Availability: Samples and production quantities of the new 8-GB DDR3L SDRAM are available now, with lead times of six to eight weeks.

Click to download the AS4C1G8MD3L datasheet.

Contact David Bagby, david@alliancememory.com, +1 650 610-6800

New Product Announcement: New 256M High-Speed CMOS SDRAMs

AS4C8M32S-6TIN and AS4C8M32S-7TCN: New 256M High-Speed CMOS SDRAMs
AS4C8M32S-6TIN
The News: Alliance Memory extends its offering of 256M high-speed CMOS synchronous DRAMs (SDRAM) with two new x32 devices in the 86-pin 400-mil plastic TSOP II package.

Key Specifications and Benefits:

  • Feature the 86-pin 400-mil plastic TSOP II package
  • Internally configured as four banks of 8M word x 32 bits
  • Offer a synchronous interface
  • Operate from a single +3.3-V (± 0.3 V) power supply
  • Fast access time from clock down to 5.4 ns and clock rates to 166 MHz
  • Available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges
  • Programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Programmable mode register allows the system to choose the most suitable modes to maximize performance
  • Lead (Pb)- and halogen-free

Target Applications:

  • Industrial, commercial, medical, telecom, and networking products

The Context: The high-density AS4C8M32S-6TIN and AS4C8M32S-7TCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical, telecom, and networking products requiring high memory bandwidth. The devices are the latest in Alliance Memory’s full line of high-speed SDRAMs, which includes components with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages. For Alliance Memory customers, the devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn’t perform die shrinks, which frees up engineering resources.

Availability: Samples and production quantities of the new SDRAMs are available now, with lead times of six to eight weeks for large orders.

Alliance Memory’s Complete Portfolio of x32 SDRAMs

Part number  Configuration Clock rate Package Temp. range
AS4C2M32S-6BIN 2M x 32 bit 166 MHz 90-ball TFBGA -40 °C +85 °C
AS4C2M32S-7BCN 2M x 32 bit 143 MHz 90-ball TFBGA 0 °C to +70 °C
AS4C2M32SA-6TCN 2M x 32 bit 166 MHz 86-pin TSOP II 0 °C to +70 °C
AS4C2M32SA-6TIN 2M x 32 bit 166 MHz 86-pin TSOP II -40 °C +85 °C
AS4C2M32SA-7TCN 2M x 32 bit 143 MHz 86-pin TSOP II 0 °C to +70 °C
AS4C4M32S-6BIN 4M x 32 bit 166 MHz 90-ball TFBGA -40 °C +85 °C
AS4C4M32S-7BCN 4M x 32 bit 143 MHz 90-ball TFBGA 0 °C to +70 °C
AS4C4M32SA-6TCN 4M x 32 bit 166 MHz 86-pin TSOP II 0 °C to +70 °C
AS4C4M32SA-6TIN 4M x 32 bit 166 MHz 86-pin TSOP II -40 °C +85 °C
AS4C4M32SA-7TCN 4M x 32 bit 143 MHz 86-pin TSOP II 0 °C to +70 °C
AS4C8M32S-6BIN 8M x 32 bit 166 MHz 90-ball TFBGA -40 °C +85 °C
AS4C8M32S-6TIN 8M x 32 bit 166 MHz 86-pin TSOP II -40 °C +85 °C
AS4C8M32S-7BCN 8M x 32 bit 143 MHz 90-ball TFBGA 0 °C to +70 °C
AS4C8M32S-7TCN 8M x 32 bit 143 MHz 86-pin TSOP II 0 °C to +70 °C

Click to download the AS4C8M32S-6TIN and AS4C8M32S-7TCN datasheet.

Contact David Bagby, david@alliancememory.com, +1 650 610-6800

Legacy Micron 512M SDRAMs — Alliance Memory

Alliance Memory Now Offering Must-Have Legacy Micron 512M SDRAMs

Alliance Memory has partnered with Micron Semiconductor to offer four 512M synchronous DRAM (SDRAM) devices that were discontinued with Micron PCN #30995. The MT48LC32M16A2P-75: C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C will be available from Alliance Memory with their original Micron part numbers into 2017, ensuring that you won´t have to do a requalification of the parts for nearly two to three years.

Alliance Memory also offers Alliance-marked 512M SDRAMs, manufactured by Micron Semiconductor, which are 100% identical to the Micron parts: the AS4C32M16SM-7TCN and AS4C32M16SM-7TIN. In addition, we have already begun our own design, which will be ready in 2016. When this pin-to-pin-compatible part is ready to serve as a longer-term replacement, you will be able to make an easy transition to the Alliance part, experiencing no gap in product availability.

Key Device Specifications

Micron Semiconductor
part number		 Alliance Memory
part number		 Density Temperature
rating
MT48LC32M16A2P-75:C AS4C32M16SM-7TCN 32M x 16 0 °C to +70 °C, commercial
MT48LC32M16A2P-75 IT:C AS4C32M16SM-7TIN 32M x 16 -40 °C to +85 °C, industrial
MT48LC64M8A2P-75:C Only offer Micron part number 64M x 8 0 °C to +70 °C, commercial
MT48LC64M8A2P-75 IT:C Only offer Micron part number 64M x 8 -40 °C to +85 °C, industrial

Legacy Micron Lead (Pb)-Bearing DDR, DDR2, and SDR SDRAMs

Discontinued Micron Semiconductor Lead (Pb)-Bearing DDR, DDR2, and SDR SDRAMs Available from Alliance Memory

Alliance Memory is selling the following Micron Semiconductor lead (Pb)-bearing double data rate (DDR), double data rate 2 (DDR2), and single data rate (SDR) devices that Micron discontinued with Micron PCN #31396 (last time buy: April 15, 2015; last time ship: Nov. 30, 2015).

With the addition of these devices, Alliance Memory now offers a wide range of lead-bearing Micron devices, including 64M, 128M, 256M, and 512M SDR SDRAMs; 256M and 512M DDR SDRAMs; and 2G DDR2 SDRAMs. The devices are available in a variety of configurations, packages, and voltages, and are offered in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges.

Available whilst stocks last.  To order , please send E-mail to orders@alliancememory.com.

Additional legacy Micron DRAMs discontinued with Micron PCN 30995.

Micron Semiconductor
part number		 Description
MT46V16M16TG-5B:MTR DDR1, 256M, 16M X 16, TSOP, commercial temperature, leaded, tape-and-reel
MT46V16M16TG-5B IT:M DDR1, 256M, 16M X 16, TSOP, industrial temperature, leaded
MT46V32M16CV-5B IT:J DDR1, 512M, 32M X 16, 84 BGA, industrial temperature, leaded
MT46V32M16TG-5B IT:JTR DDR1, 512M, 32M X 16, TSOP, industrial temperature, leaded, tape-and-reel
MT46V32M16TG-5B IT:J DDR1, 512M, 32M X 16 TSOP, industrial temperature, leaded
MT46V64M8CV-5B IT:J DDR1, 512M, 64M X 8, 84-ball BGA, industrial temperature, leaded
MT48LC16M16A2F4-6A IT:GTR SDRAM, 256M, 16M X 16, 54-ball BGA, industrial temperature, leaded, tape-and-reel
MT48LC16M16A2F4-6A:G SDRAM, 256M, 16M X 16, 54-ball BGA, commercial temperature, leaded
MT48LC16M16A2F4-6A:GTR SDRAM, 256M, 16M X 16, 54-ball BGA, commercial temperature, leaded, tape-and-reel
MT48LC16M16A2TG-6A IT:GTR SDRAM, 256M, 16M X 16, 54-pin TSOP, industrial temperature, leaded, tape-and-reel
MT48LC16M16A2TG-6A:GTR SDRAM, 256M, 16M X 16, 54-pin TSOP, commercial temperature, leaded, tape-and-reel
MT48LC2M32B2TG-6A IT:J SDRAM, 64M, 2M X 32, TSOP, industrial temperature, leaded
MT48LC2M32B2TG-6A IT:JTR SDRAM, 64M, 2M X 32, TSOP, industrial temperature, leaded, tape-and-reel
MT48LC2M32B2TG-6A:J SDRAM, 64M, 2M X 32, TSOP, commercial temperature, leaded
MT48LC32M16A2TG-75:C SDR, 512M, 32M X 16, 3.3 V, 54-pin TSOP II, 133 MHz, commercial temperature
MT48LC32M16A2TG-75:CTR SDR, 512M, 32M X 16, 3.3 V, 54-pin TSOP II, 133 MHz, commercial temperature, tape-and-reel
MT48LC4M32B2TG-6A:L SDRAM, 128M, 4M X 32, TSOP, commercial temperature, leaded
MT48LC4M32B2TG-6A IT:L SDRAM, 128M, 4M X 32, TSOP, industrial temperature, leaded
MT48LC64M8A2TG-75 IT:C SDR, 512M, 64M X 8, 3.3 V, 54-pin TSOP II, 133 MHz, industrial temperature
MT48LC64M8A2TG-75:C SDR, 512M, 64M X 8, 3.3 V, 54-pin TSOP II, 133 MHz, commercial temperature
MT48LC8M16A2TG-6A:L SDRAM, 128M, 8M X 16, TSOP, commercial temperature, leaded
MT48LC8M16A2TG-6A:LTR SDRAM, 128M, 8M X 16, TSOP, commercial temperature, leaded, tape-and-reel

New Product Announcement: 8G DDR3 — AS4C512M16D3L: New Monolithic High-Speed, Low-Voltage CMOS DDR3L SDRAM

The News: Alliance Memory introduces a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gb density in the 96-ball, 9-mm by 14-mm, lead (Pb)-free FBGA package.

Key Specifications and Benefits:

  • Offered in the 96-ball, 9-mm by 14-mm, lead (Pb)-free FBGA package
  • Features state-of-the art silicon provided by Micron Technology, Inc.
  • Extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz
  • Operates from a single +1.35-V power supply
  • Available in commercial (0 °C to +95 °C) and industrial (-40 °C to +95 °C) temperature ranges
  • Internally configured as eight banks of 512M x 16 bits
  • Fully synchronous operation
  • Programmable read or write burst lengths of 4 or 8
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions include auto- or self-refresh
  • Programmable mode register allows the system to choose the most suitable modes to maximize performance

Target Applications:

  • Industrial, medical, networking, telecom, and aerospace applications

The Context: With minimal die shrinks, the single-die AS4C512M16D3L provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications — eliminating the need for costly redesigns and part requalification. This 8-Gb DDR3 is a logical choice for customers that require increased memory yet face board space constraints.

Availability: Samples of the new AS4C512M16D3L are available now, with lead times of six to eight weeks for production quantities.

Alliance Memory’s Complete DDR3 Portfolio

Part # Density Power Supply Configuration Temp. Range Package
AS4C64M16D3-12BCN 1 Gb +1.5 V 64M x 16 bit 0 °C to +95 °C 96-ball FBGA
AS4C64M16D3-12BIN 1 Gb +1.5 V 64M x 16 bit -40 °C to +95 °C 96-ball FBGA
AS4C64M16D3-12BAN 1 Gb +1.5 V 64M x 16 bit -40 °C to +105 °C 96-ball FBGA
AS4C128M8D3-12BCN 1 Gb +1.5 V 128M x 8 bit 0 °C to +95 °C 78-ball FBGA
AS4C128M8D3-12BIN 1 Gb +1.5 V 128M x 8 bit -40 °C to +95 °C 78-ball FBGA
AS4C128M8D3-12BAN 1 Gb +1.5 V 128M x 8 bit -40 °C to +105 °C 78-ball FBGA
AS4C128M16D3-12BCN 2 Gb +1.5 V 128M x 16 bit 0 °C to +95 °C 96-ball FBGA
AS4C128M16D3-12BIN 2 Gb +1.5 V 128M x 16 bit -40 °C to +95 °C 96-ball FBGA
AS4C128M16D3-12BAN 2 Gb +1.5 V 128M x 16 bit -40 °C to +105 °C 96-ball FBGA
AS4C256M8D3-12BCN 2 Gb +1.5 V 256M x 8 bit 0 °C to +95 °C 78-ball FBGA
AS4C256M8D3-12BIN 2 Gb +1.5 V 256M x 8 bit -40 °C to +95 °C 78-ball FBGA
AS4C256M8D3-12BAN 2 Gb +1.5 V 256M x 8 bit -40 °C to +105 °C 78-ball FBGA
AS4C256M16D3-12BCN 4 Gb +1.5 V 256M x 16 bit 0 °C to +95 °C 96-ball FBGA
AS4C256M16D3-12BIN 4 Gb +1.5 V 256M x 16 bit -40 °C to +95 °C 96-ball FBGA
AS4C256M16D3-12BAN 4 Gb +1.5 V 256M x 16 bit -40 °C to +105 °C 96-ball FBGA
AS4C512M8D3-12BCN 4 Gb +1.5 V 512M x 8 bit 0 °C to +95 °C 78-ball FBGA
AS4C512M8D3-12BIN 4 Gb +1.5 V 512M x 8 bit -40 °C to +95 °C 78-ball FBGA
AS4C512M8D3-12BAN 4 Gb +1.5 V 512M x 8 bit -40 °C to +105 °C 78-ball FBGA
AS4C64M16D3L-12BCN 1 Gb +1.35 V 64M x 16 bit 0 °C to +95 °C 96-ball FBGA
AS4C64M16D3L-12BIN 1 Gb +1.35 V 64M x 16 bit -40 °C to +95 °C 96-ball FBGA
AS4C128M8D3L-12BCN 1 Gb +1.35 V 128M x 8 bit 0 °C to +95 °C 78-ball FBGA
AS4C128M8D3L-12BIN 1 Gb +1.35 V 128M x 8 bit -40 °C to +95 °C 78-ball FBGA
AS4C128M16D3L-12BCN 2 Gb +1.35 V 128M x 16 bit 0 °C to +95 °C 96-ball FBGA
AS4C128M16D3L-12BIN 2 Gb +1.35 V 128M x 16 bit -40 °C to +95 °C 96-ball FBGA
AS4C128M16D3L-12BAN 2 Gb +1.35 V 128M x 16 bit -40 °C to +105 °C 96-ball FBGA
AS4C256M8D3L-12BCN 2 Gb +1.35 V 256M x 8 bit 0 °C to +95 °C 78-ball FBGA
AS4C256M8D3L-12BIN 2 Gb +1.35 V 256M x 8 bit -40 °C to +95 °C 78-ball FBGA
AS4C256M16D3L-12BCN 4 Gb +1.35 V 256M x 16 bit 0 °C to +95 °C 96-ball FBGA
AS4C256M16D3L-12BIN 4 Gb +1.35 V 256M x 16 bit -40 °C to +95 °C 96-ball FBGA
AS4C512M8D3L-12BCN 4 Gb +1.35 V 512M x 8 bit 0 °C to +95 °C 78-ball FBGA
AS4C512M8D3L-12BIN 4 Gb +1.35 V 512M x 8 bit -40 °C to +95 °C 78-ball FBGA
AS4C256M32D3-12BCN 8 Gb +1.35 V 256M x 32 bit 0 °C to +95 °C 136-ball FBGA
AS4C256M32D3-12BIN 8 Gb +1.35 V 256M x 32 bit -40 °C to +95 °C 136-ball FBGA
AS4C256M32D3L-12BCN 8 Gb +1.35 V 256M x 32 bit 0 °C to +95 °C 136-ball FBGA
AS4C256M32D3L-12BIN 8 Gb +1.35 V 256M x 32 bit -40 °C to +95 °C 136-ball FBGA
AS4C512M16D3L-12BCN 8 Gb +1.35 V 512M x 16 bit 0 °C to +95 °C 96-ball FBGA
AS4C512M16D3L-12BIN 8 Gb +1.35 V 512M x 16 bit -40 °C to +95 °C 96-ball FBGA

Click to download the AS4C512M16D3L datasheet.

Contact David Bagby, david@alliancememory.com , +1 650 610-6800