New 8Mb to 128Mb High-Speed CMOS PSRAMs

The News: Alliance Memory introduces a new family of high-speed CMOS pseudo SRAMs (PSRAMs) with densities from 8Mb to 128Mb in 6.0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm by 4.0 mm by 1.0 mm 49-ball FPBGA packages.

Part Numbers: AS1C512K16PL-70BIN, AS1C512K16P-70BIN, AS1C1M16PL-70BIN, AS1C1M16P-70BIN, AS1C2M16P-70BIN, AS1C4M16PL-70BIN, and AS1C8M16PL-70BIN

Key Specifications and Benefits:

• Wide range of densities available:
  • 8Mb, 16MB, and 32MB devices featuring interfaces compatible with asynchronous type SRAM
  • 64Mb and 128Mb CellularRAM PSRAMs featuring a multiplexed address/data bus for greater bandwidth
• Offered in 0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm by 4.0 mm by 1.0 mm 49-ball FPBGA packages
• Support asynchronous and burst operation
• Feature read or write burst lengths of 4, 8, 16, or 32 words, or continuous burst
• Available in industrial temperature ranges of -30 °C to +85 °C and -40 °C to +85 °C
• Fast access speeds of 70s
• Operate from a single power supply of 1.7V to 1.95V or 2.6V to 3.3V
• Power-saving features:
  • Auto temperature-compensated self-refresh (ATCSR)
  • Partial array self-refresh (PASR)
  • Deep power down (DPD) mode

Target Applications:

• Wireless, automotive, networking, and industrial applications

The Context:Alliance Memory’s high-speed CMOS PSRAMs combine the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions. Featuring high-density DRAM cores with SRAM interfaces and on-chip refresh circuits for refresh-free operation, the devices provide the high bandwidth and the low power necessary to replace SRAMs in portable electronics such as mobile phones and PDAs, or to serve as companion chips to burst NOR Flash applications.

Availability:Samples and production quantities of the new PSRAMs will be available in November 2018, with lead times of eight weeks.