Datasheet | Package | Temp. Range | Documentation | Stock | ||
---|---|---|---|---|---|---|
MT48LC32M16A2P-75:C | 54pin TSOP II | Commercial | MDS | Reliability | IBIS | Buy |
MT48LC32M16A2P-75IT:C | 54pin TSOP II | Industrial | MDS | Reliability | IBIS | Buy |
Search Results for: IBIS
DDR3 SDRAM
Alliance Memory’s lineup of DDR3 (1.5V) and DDR3L (1.35V) SDRAMs includes 512Mb, 1Gb, 2Gb, 4Gb, and 8Gb devices in x8/x16 bus widths, offered in 78-ball and 96-ball FBGA packages across commercial, industrial, and automotive temperature ranges. Offering a double data rate architecture for extremely fast transfer rates of up to 2133Mbps/pin and clock rates of 1066MHz, the devices provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, consumer, telecom, aerospace, and automotive applications.
Density | Org | Part Number | Models | Power | Speed | Packages | Stock |
---|---|---|---|---|---|---|---|
512M | 32Mx16 | AS4C32M16D3 | 1.5V | 800MHz, 933MHz | 96-ball FBGA | Buy | |
AS4C32M16D3L | 1.35V | 800MHz | 96-ball FBGA | Buy | |||
64Mx8 | AS4C64M8D3 | 1.5V | 800MHz | 78-ball FBGA | Buy | ||
AS4C64M8D3L | 1.35V | 800MHz | 78-ball FBGA | Buy | |||
1G | 64Mx16 | AS4C64M16D3B | 1.5V | 800MHz | 96-ball FBGA | Buy | |
AS4C64M16D3LB | 1.35V | Buy | |||||
AS4C64M16D3LC | 1.35V | Buy | |||||
128Mx8 | AS4C128M8D3B | IBIS file 1.5V | 1.5V | 800MHz | 78-ball FBGA | Buy | |
AS4C128M8D3LB | 1.35V | Buy | |||||
AS4C128M8D3LC | 1.35V | Buy | |||||
2G | 128Mx16 | ||||||
AS4C128M16D3C | 1.5V | 1066MHz 2133Mbps/pin | 96-ball FBGA | Buy | |||
AS4C128M16D3LC | 1.35V | 800MHz | 96-ball FBGA | Buy | |||
256Mx8 | AS4C256M8D3LC | 1.35V | 800MHz | 78-ball FBGA | Buy | ||
4G | 256Mx16 | AS4C256M16D3C | 1.5V | 800MHz 933MHz 1066MHz | 96-ball FBGA | Buy | |
AS4C256M16D3LC | 1.35V | Buy | |||||
512Mx8 | AS4C512M8D3LC | 1.35V | 800MHz 933MHz | 78-ball FBGA | Buy | ||
8G | 512Mx16 | AS4C512M16D3LA Dual die package (DDP) |
1.35V | 933MHz | 96-ball FBGA | Buy | |
512Mx16 | AS4C512M16D3LB Dual die package (DDP) |
1.35V | 800MHz | 96-ball FBGA | Buy | ||
512Mx16 | AS4C512M16D3LC Dual die package (DDP) |
1.35V | 933MHZ & 800MHz | 96-ball FBGA | Buy | ||
1Gx8 | AS4C1G8D3LA Dual die package (DDP) |
1.35V | 933MHz | 78-ball FBGA | Buy |
Add suffix TR to the part number to order Tape & Reel packing media.
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October 2014 Quarterly Newsletter
BREAKING: ALLIANCE MEMORY PARTNERS WITH MICRON TECHNOLOGY TO EXTEND 512M SDRAM PRODUCT LIFE CYCLE
Alliance Memory is partnering with Micron Technology to supply and extend availability of support for three 512M synchronous DRAM (SDRAM) devices that Micron discontinued with Micron PCN #30995. Alliance Memory will be offering Micron’s 32M x 16 MT48LC32M16A2P-75: C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), and 64M x 8 MT48LC64M8A2P-75:C. In addition to the Micron part numbers Alliance Memory will also offer Alliance-marked 512M SDRAMs manufactured by Micron which will be 100% identical to the Micron parts.
Read the press release
Read the coverage in EE Times
NEW LOW-POWER, HIGH-SPEED MOBILE CMOS DDR SDRAMS WITH 256-MB, 512-MB, 1-GB, AND 2-GB DENSITIES
Alliance Memory has an entirely new product category: high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM). Designed to increase efficiency and extend battery life in compact portable devices, these new mobile DRAMs feature low power consumption from 1.7 V to 1.95 V and densities of 256-Mb, 512-Mb, 1-Gb, and 2-Gb. They come in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages.
To help designers squeeze more functionality into less space, our DDR SDRAMs have an auto temperature compensated self-refresh (ATCSR) feature that minimizes power consumption at lower ambient temperatures. A partial array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required. For optimal functionality in extreme environments, all devices are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges.
Click here for complete product details.
To request samples of the mobile DDR SDRAMs, please send an E-mail to sample@alliancememory.com.
ALLIANCE MEMORY AT ELECTRONICA 2014
At electronica 2014, Alliance Memory will be highlighting our latest offering of legacy IC solutions, including high-speed CMOS synchronous DRAMs (SDRAM) and mobile low-power double data rate (DDR), DDR2, and DDR3 SDRAMs featuring a wide range of densities, configurations, package options, and temperature ratings. We’ll be in Hall A5, Booth 224 at Messe Muenchen, November 11-14. Stop by and enter for a chance to win a wearable GoPro HERO camera.
NEW TEAM MEMBERS AT ALLIANCE MEMORY
We’re pleased to announce two new members of the worldwide Alliance Memory team.
In China, Winner Chen has joined us as field application engineer. A valuable new resource for designers using our legacy ICs, Winner is ready to help you solve technical issues such as configuring timing parameters on software and connection diagrams and PCB layouts on hardware. He’ll also be handling requests for IBIS models, information on ESD levels, and more.
“From my own experience in electronics design, I know that strong technical support from suppliers can be vital to the success of a project,” Winner says. “I’m looking forward to using what I’ve learned in my career to help our customers overcome the challenges in their applications and get their products to market faster, all while avoiding costly redesigns by using our legacy ICs.”
Winner is based in Shenzhen City, China, and can be reached at winner@alliancememory.com.
In Southeastern Europe, we’ve strengthened our sales force with the appointment of Ivailo Dimitrov as an Alliance Memory salesperson based in Bulgaria.
“There is high demand in Bulgaria for pin-for-pin compatible legacy memory devices that help manufacturers avoid the high cost of redesigns,” says Ivo. “I’m looking forward to meeting this need with Alliance Memory’s SRAMs and DRAMs, while helping the company continue its success in the country.”
Ivo can be reached at ivailo@alliancememory.com.
Alliance Memory Strengthens Customer Support Team, Appoints Winner Chen as Field Application Engineer
SAN CARLOS, Calif. — September 22, 2014 — Alliance Memory today announced that the company has bolstered its customer support team with the addition of Winner Chen as field application engineer. Serving as a valuable resource for designers utilizing Alliance Memory’s legacy ICs, Mr. Chen will assist in solving technical issues such as configuring timing parameters on software and connection diagrams and PCB layouts on hardware while fielding requests for IBIS models, information on ESD levels, and more.
Mr. Chen comes to Alliance Memory from Jiangsu Mesh Communication Electronic Co. Ltd., where as director of the central node platform he was instrumental in the creation of three generations of wireless ad hoc network communication products. Previously, for Shenzhen B.C. Electronic Co., Ltd., he developed palmtop software and electronic energy meters for use in a variety of environments.
“Customer support has always been a top priority for Alliance Memory, and we pride ourselves on our friendly, knowledgeable staff,” said David Bagby, president and CEO of Alliance Memory. “With his considerable development experience in a wide range of electronic products, Winner makes a great addition to the team as our new field application engineer. We’re excited to have him backing up our products and providing invaluable expertise to our customers.”
“From my own experience in electronics design, I know that strong technical support from suppliers can be vital to the success of a project,” said Chen. “I’m looking forward to using what I’ve learned in my career to help our customers overcome the challenges in their applications and get their products to market faster, all while avoiding costly redesigns by using our legacy ICs.”
Mr. Chen holds a bachelor’s degree in optical information science and technology from Guilin University of Electronic Technology. He is based in Shenzhen City, China, and reports to Bagby.